CN104966774B - A kind of reverse buckling type small size high-power LED encapsulation structure - Google Patents
A kind of reverse buckling type small size high-power LED encapsulation structure Download PDFInfo
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- CN104966774B CN104966774B CN201510391433.9A CN201510391433A CN104966774B CN 104966774 B CN104966774 B CN 104966774B CN 201510391433 A CN201510391433 A CN 201510391433A CN 104966774 B CN104966774 B CN 104966774B
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 63
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000011324 bead Substances 0.000 claims abstract description 33
- 238000003466 welding Methods 0.000 claims abstract description 17
- 241000218202 Coptis Species 0.000 claims abstract description 9
- 235000002991 Coptis groenlandica Nutrition 0.000 claims abstract description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 22
- 239000006071 cream Substances 0.000 claims description 21
- 239000007787 solid Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 15
- 230000000694 effects Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 4
- 238000004021 metal welding Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- -1 metal welding Disk Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of reverse buckling type small size high-power LED encapsulation structure, including LED lamp bead main body and circuit board, LED lamp bead main body includes: substrate, is set there are two metal pad；LED chip, admittedly it is welded on one of metal pad and is connected between two metal pads by gold thread；Transparent plastic-sealed body, is covered on substrate, LED chip and gold thread is sealed in interior；Circuit board is equipped with the through-hole that diameter is greater than maximum width on the transparent plastic-sealed body, and LED lamp bead main body is buckled on circuit boards, is entirely located at the transparent plastic-sealed body of LED lamp bead main body in through-hole, and the substrate of LED lamp bead main body is fixed with welding circuit board.The heat that LED chip generates largely passes through metal pad and leads circuit board, is finally dispersed into air, thermal resistance is small, radiating rate is fast, heat dissipation area is increased under limited bulk, realizes the packaged high-power LED lamp in small scale structures, and is good heat dissipation effect, at low cost.
Description
Technical field
The present invention relates to LED encapsulation structures, more particularly to a kind of reverse buckling type small size high-power LED encapsulation knot
Structure.
Background technique
Present LED encapsulation requires power higher and higher towards small size, light and thin type development, and the hot-fluid of LED chip is close
Degree is bigger, then also higher and higher to package substrate material cooling requirements.
The first method of conventional LED packages structure is using BT resin base material in the prior art, and tow sides cover
Copper foil produces positive and negative metal pad by techniques such as etching, through-hole, plating afterwards, carries out die bond bonding wire in the solid welding zone of substrate
Operation, then packing colloid protects chip.When LED encapsulation is using patch in the prior art, the back-metal pad of packaging body with
Circuit board is welded by solder(ing) paste, and the heat that when such chip operation generates passes through solid welding zone copper foil, BT resin base material, metal welding
Disk, tin cream are transmitted on circuit board.Disadvantage be conventional LED packages substrate metal pad in bottom, and chip consolidates welding zone in base
Plate front, the heat that when chip operation generates needs just distribute by package substrate, and the substrate thermal resistance of substrate is larger,
Be unfavorable for radiating, cannot achieve in it is high-power.
Second method is encapsulated using ceramic substrate in the prior art, uses conventional LED packages substrate instead ceramic substrate,
Other techniques are identical as routine, can be improved product heat-sinking capability, but ceramic substrate higher cost, and ceramic substrate system at present
It is limited to make precision, realizes that small size is more difficult.
The third method is using the anti-patch of PPA bracket encapsulation, as shown in Figure 1, including substrate 1, on substrate 1 in the prior art
Equipped with metal pad 2, a portion metal pad is passed through from substrate 1 and is connected with the metal pad for being set to substrate side surfaces,
LED chip 3 is welded on metal pad admittedly, is welded between metal pad and circuit board 4 by tin cream 5, and this PPA bracket encapsulation is anti-
Patch has the disadvantage in that first is that the anti-heat conduction path for pasting bracket of PPA is longer, it is difficult to realize relatively high power；Second is that current PPA branch
Frame production precision is limited, realizes that small size is more difficult；Third is that PPA is counter to paste bracket higher cost.
Summary of the invention
Aiming at the shortcomings in the prior art, the technical problem to be solved in the present invention is that providing a kind of reverse buckling type small size
High-power LED encapsulation structure realizes the LED light of the packaged high-power in small size, and at low cost.
In order to solve the above technical problems, the present invention is realized by following scheme: a kind of reverse buckling type small size great power LED
Encapsulating structure, including LED lamp bead main body and circuit board, the LED lamp bead main body include:
Substrate is set there are two metal pad；
LED chip, admittedly it is welded on one of them described metal pad and passes through gold between described two metal pads
Line connection；
Transparent plastic-sealed body, covering on the substrate, LED chip and gold thread are sealed in interior；
The circuit board is equipped with the through-hole that diameter is greater than maximum width on the transparent plastic-sealed body, the LED lamp bead master
Body tips upside down on the circuit board, is entirely located at the transparent plastic-sealed body of the LED lamp bead main body in the through-hole, and described
The substrate of LED lamp bead main body is fixed with the welding circuit board.
Further, described two metal pads are set to the front of substrate, described two metal pads and circuit board it is upper
It is welded between surface by tin cream.
Further, described two metal pads are extended to the side of substrate by the front of substrate；It is set on the circuit board
There is the stepped hole communicated with through-hole, substrate is entirely located in stepped hole and the back side of substrate is concordant with the circuit board upper surface,
It is welded between two metal pads on the substrate and the hole wall and bottom surface of the stepped hole by tin cream.
Further, one of them in described two metal pads is anode, another is cathode.
Further, described two metal pads are made of copper material.
Further, the electroplate of described two metal pads or gold-plated.
Further, the substrate of the substrate is BT resin.
Further, the substrate of the substrate uses metal material and two metal pads for an overall structure, substrate
It is upper that the solid welding zone being welded and fixed with LED chip is formed by plating, and anode and cathode are formed by etching.
Further, a front surface and a side surface of the substrate passes through bottom surface and the sidewall weld of tin cream and stepped hole.
Further, the metal material is copper or iron.
The invention has the benefit that
Reverse buckling type small size high-power LED encapsulation structure of the invention by being directly welded in metal pad for LED chip admittedly
On, and simultaneously tip upside down on entire LED lamp bead main body on the circuit board for being provided with through-hole, LED lamp bead main body is entirely located at through-hole
It is interior, it is welded between metal pad and circuit board by tin cream, so that the heat that LED chip generates largely passes through metal welding
Disk, which is transmitted to, leads circuit board, is finally dispersed into air, and thermal resistance is small, and radiating rate is fast, and heat dissipation is increased under limited bulk
Area, realizes the packaged high-power LED lamp in small scale structures, and good heat dissipation effect, at low cost.
In addition the substrate of substrate is in an overall structure using metal material and two metal pads, and such LED chip produces
Raw heat can directly be shed by substrate, and heat dissipation effect is more preferable.
Detailed description of the invention
Fig. 1 is LED encapsulation structure schematic diagram in the prior art.
Fig. 2A is the structural schematic diagram of the first embodiment of reverse buckling type small size high-power LED encapsulation structure of the present invention.
The heat dissipation route map of Fig. 2 B the first embodiment of reverse buckling type small size high-power LED encapsulation structure of the present invention.
Fig. 3 A is the structural schematic diagram of second of embodiment of reverse buckling type small size high-power LED encapsulation structure of the present invention.
The heat dissipation route map of Fig. 3 B second of embodiment of reverse buckling type small size high-power LED encapsulation structure of the present invention.
Fig. 4 A is the structural schematic diagram of the third embodiment of reverse buckling type small size high-power LED encapsulation structure of the present invention.
Fig. 4 B is the heat dissipation route map of the third embodiment of reverse buckling type small size high-power LED encapsulation structure of the present invention.
Specific embodiment
Technical solution of the present invention is explained in detail with reference to the accompanying drawings and embodiments.
Such as the structural schematic diagram that Fig. 2A is the first embodiment, a kind of reverse buckling type small size high-power LED encapsulation structure, packet
LED lamp bead main body 10 and circuit board 20 are included, wherein LED lamp bead main body 10 includes substrate 11, LED chip 13 and transparent plastic-sealed body
14。
Substrate 11 is set there are two metal pad 12, one of them in two metal pads 12 is anode, another is negative
Pole, LED chip 13 are welded on one of metal pad 12 admittedly and are connected between two metal pads 12 through gold thread.It is transparent
Plastic packaging 14 covers on the substrate 11, LED chip 13 and gold thread are sealed in, may be implemented and improve the output of light in this way.
LED chip 13 is equipped with solid welding zone and wire welding area, Gu welding zone is used to weld with metal pad 12, wire welding area is for connecting
Metal wire.
Circuit board 20 is equipped with the through-hole 21 that diameter is greater than maximum width on transparent plastic-sealed body 14, to be conducive to lamp bead hair
Illumination out is shot out.LED lamp bead main body, which is fallen, 10 to be buckled on circuit board 20, keeps the transparent plastic-sealed body 14 of LED lamp bead main body 10 whole
It is a to be located in through-hole 21, and the substrate 11 of LED lamp bead main body 10 is welded and fixed with circuit board 20.
The substrate of substrate 11 is set to the front of substrate 11 using BT resin, two metal pads 12 in the present embodiment,
And LED chip 13 is welded in admittedly on metal pad, such metal pad 12 has just been produced on the front of LED lamp bead main body 10, that
In the same plane, the solid welding zone and metal pad 12 of LED chip 13 are an entirety for metal pad 12 and LED chip 13.
The material of the use of two metal pads 12 is all copper, naturally it is also possible to it is other metal materials, other two metal pad 12
Surface is all silver-plated or iron, to improve reliability when welding.Two metal pads 12 and circuit board 20 is upper in the present embodiment
It is welded between surface by tin cream 22.
Such as the heat dissipation route map that Fig. 2 B is the first embodiment, LED light is generated largely in work process by LED chip 13
Heat, the heat of wherein most is transmitted on tin cream 33 by metal pad 12 on substrate, then is transmitted to electricity by tin cream 22
It on road plate 20, is finally dispersed into air, in addition a minor heat then passes through metal pad and substrate is dispersed into air.
Using the LED encapsulation structure of the first embodiment, so that the heat that LED chip 13 generates largely passes through metal welding
Disk 12 is transmitted to tin cream 22, then is transmitted to circuit board 20 finally, being dispersed into air by tin cream 22, and thermal resistance is small, radiating rate
Fastly, heat dissipation area is increased under limited bulk, realizes the packaged high-power LED lamp in small scale structures, and the effect that radiates
Fruit is good, at low cost.
Fig. 3 A is the structural schematic diagram of second of embodiment, and LED encapsulation structure includes LED lamp bead main body 30 in the present embodiment
With circuit board 40, wherein LED lamp bead main body 30 includes substrate 31, LED chip 33 and transparent plastic-sealed body 34.Circuit board 40 is equipped with
Diameter is greater than the through-hole 41 of maximum width on transparent plastic-sealed body 34, and LED lamp bead main body, which is fallen, 30 to be buckled on circuit board 40, makes LED light
The transparent plastic-sealed body 34 of pearl main body 30 is entirely located in through-hole 41, and substrate 31 and circuit board 40 welding of LED lamp bead main body 30 are solid
Fixed, the substrate of substrate 31 is using BT resin.
The present embodiment and the first embodiment the difference is that, two metal pads 32 are extended by the front of substrate 31
To the side of substrate 31, circuit board 40 is equipped with the stepped hole 43 communicated with through-hole 41, and substrate 31 is entirely located in stepped hole 43
And the back side of substrate 31 is concordant with 40 upper surface of circuit board, the hole wall of two on substrate 31 metal pad 32 and stepped hole 43 and
It is welded between bottom surface by tin cream 42.
If substrate 31 is put in stepped hole 43, but use such as two metal pads 32 and circuit board in embodiment one
It is welded between 40 upper surface by tin cream 42, also can guarantee that there is preferably upper tin in the side of LED lamp bead main body 30, to make to weld
It connects stronger.
One of them in two metal pads 32 is anode, another is cathode, and two metal pads 32 use copper material
Material is made, the electroplate or gold-plated of two metal pads 32.
Fig. 3 B is the heat dissipation route map of second of embodiment, and LED light is generated largely in work process by LED chip 33
Heat, wherein most heat are transmitted to tin cream 42 by the positive metal pad of substrate 31, then are transmitted to circuit board 40 and lead to
The metal pad for crossing 31 side of substrate is transmitted to tin cream 42, then is transmitted to circuit board 40, is finally dispersed into air, small part heat
Amount is dispersed into air by substrate.
Using the LED encapsulation structure of second of embodiment, so that two metal pads 32 and circuit board 40 on substrate 31
Bigger contact area is just obtained, faster, heat dissipation effect is more preferable relative to implementing its radiating rate for one kind.
Fig. 4 A is the structural schematic diagram of the third embodiment, and LED encapsulation structure includes LED lamp bead main body 50 in the present embodiment
With circuit board 60, wherein LED lamp bead main body 50 includes substrate 51, LED chip 53 and transparent plastic-sealed body 54.Circuit board 60 is equipped with
Diameter is greater than the through-hole 61 of maximum width on transparent plastic-sealed body 54, and LED lamp bead main body, which is fallen, 50 to be buckled on circuit board 60, makes LED light
The transparent plastic-sealed body 54 of pearl main body 50 is entirely located in through-hole 61, and substrate 51 and circuit board 60 welding of LED lamp bead main body 50 are solid
Fixed, circuit board 60 is equipped with the stepped hole 63 communicated with through-hole 61.
The present embodiment uses metal material and two metal pads from the substrate of substrate 51 unlike upper two kinds of embodiments
For an overall structure, the solid welding zone being welded and fixed with LED chip 53 is formed by plating on substrate 51, LED chip 53 is direct
Admittedly being welded on this solid welding zone, anode and cathode are also formed by etching, anode connects one end of gold thread with cathode, gold thread it is another
End connection LED chip 53, substrate 51 are entirely located at the bottom that its a front surface and a side surface in through-hole 61 all passes through tin cream 62 Yu stepped hole 63
Face and sidewall weld, such heat are directly dispersed into air by substrate 51 or are transmitted to circuit board 60 by substrate 51.
Metal material is copper or iron in the present embodiment.
The present embodiment is calculated by taking 0805 chip as an example, and R thermal resistance is 10.5 DEG C/W, wherein the calculation formula of R are as follows:
R=L/λ*s=1*10-3/(400*0.28*1.3*10-6)=10.5℃/W。
Fig. 4 B is the heat dissipation route map of second of embodiment, and heat a part that LED is generated directly is distributed by substrate 51
Into air, another part is transmitted to tin cream 62 through substrate 51, then is transmitted to circuit board 60 by tin cream 62, is finally dispersed into sky
In gas.
Using the encapsulating structure of the third embodiment, since substrate entirely uses metal material, thermal coefficient is very high, therefore
It is able to achieve rapid cooling, is further increased compared to its heat dissipation effect for upper two kinds of embodiments.
No matter use the LED encapsulation structure of which kind of above-mentioned embodiment that can realize small size high-power LED encapsulation, and
And radiating rate is fast, good heat dissipation effect, it is at low cost.
The foregoing is merely the preferred embodiment of the present invention, are not intended to limit the scope of the invention, all benefits
The equivalent structure or equivalent flow shift made by description of the invention and accompanying drawing content is applied directly or indirectly in other phases
The technical field of pass, is included within the scope of the present invention.
Claims (9)
1. a kind of reverse buckling type small size high-power LED encapsulation structure, including LED lamp bead main body (30) and circuit board (40), special
Sign is that the LED lamp bead main body (30) includes:
Substrate (31) is set there are two metal pad (32)；
LED chip (33), admittedly be welded on one of them described metal pad (32) and with described two metal pads (32) it
Between pass through gold thread be connected to；
Transparent plastic-sealed body (34), is covered on the substrate (31), LED chip (33) and gold thread is sealed in interior；
The circuit board (40) is equipped with the through-hole (41) that diameter is greater than maximum width on the transparent plastic-sealed body (34), described
LED lamp bead main body (30) tips upside down on the circuit board (40), keeps the transparent plastic-sealed body (34) of the LED lamp bead main body (30) whole
It is a to be located in the through-hole (41), and the substrate (31) of the LED lamp bead main body (30) is welded and fixed with the circuit board (40)；
Described two metal pads (32) are extended to the side of substrate (31) by the front of substrate (31)；On the circuit board (40)
Equipped with the stepped hole (43) communicated with through-hole (41), substrate (31) be entirely located in stepped hole (43) and the back side of substrate (31) with
Circuit board (40) upper surface is concordant, two metal pads (32) on the substrate (31) and the stepped hole (43)
It is welded between hole wall and bottom surface by tin cream (42).
2. a kind of reverse buckling type small size high-power LED encapsulation structure according to claim 1, which is characterized in that described two
A metal pad (32) is set to the front of substrate (31), between described two metal pads (32) and the upper surface of circuit board (40)
It is welded by tin cream (42).
3. a kind of reverse buckling type small size high-power LED encapsulation structure according to claim 2, which is characterized in that described two
One of them in a metal pad (32) is anode, another is cathode.
4. a kind of reverse buckling type small size high-power LED encapsulation structure according to claim 2, which is characterized in that described two
A metal pad (32) is made of copper material.
5. a kind of reverse buckling type small size high-power LED encapsulation structure according to claim 2, which is characterized in that described two
The electroplate or gold-plated of a metal pad (32).
6. a kind of reverse buckling type small size high-power LED encapsulation structure according to claim 2, which is characterized in that the base
The substrate of plate (31) is BT resin.
7. a kind of reverse buckling type small size high-power LED encapsulation structure according to claim 1, which is characterized in that the base
The substrate of plate (31) uses metal material and two metal pads (32) for an overall structure, passes through plating shape on substrate (31)
Anode and cathode are formed at the solid welding zone being welded and fixed with LED chip (33), and by etching.
8. a kind of reverse buckling type small size high-power LED encapsulation structure according to claim 7, which is characterized in that the base
Bottom surface and sidewall weld of a front surface and a side surface of plate (31) by tin cream (42) and stepped hole (43).
9. a kind of reverse buckling type small size high-power LED encapsulation structure according to claim 7, which is characterized in that the gold
Belonging to material is copper or iron.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510391433.9A CN104966774B (en) | 2015-07-07 | 2015-07-07 | A kind of reverse buckling type small size high-power LED encapsulation structure |
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| CN201510391433.9A CN104966774B (en) | 2015-07-07 | 2015-07-07 | A kind of reverse buckling type small size high-power LED encapsulation structure |
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| CN109449130A (en) * | 2018-10-16 | 2019-03-08 | 深圳市安德斯诺科技有限公司 | A kind of novel package structure and method |
| CN110660893B (en) * | 2019-09-06 | 2021-08-17 | 深圳市银宝山新科技股份有限公司 | Light-emitting element packaging structure and manufacturing method and manufacturing equipment thereof |
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| CN2485801Y (en) * | 2001-06-27 | 2002-04-10 | 台湾省光宝电子股份有限公司 | Structure of low heat resistance LCD |
| CN101222005A (en) * | 2007-01-12 | 2008-07-16 | 中强光电股份有限公司 | Packaging structure of light emitting diode |
| CN101621102A (en) * | 2009-07-17 | 2010-01-06 | 侯瑜虹 | Encapsulation structure and encapsulation method of light emitting diode |
| CN102683545A (en) * | 2011-03-16 | 2012-09-19 | 隆达电子股份有限公司 | Light source module for improving heat dissipation efficiency and embedded packaging structure thereof |
| CN204792892U (en) * | 2015-07-07 | 2015-11-18 | 宏齐光电子(深圳)有限公司 | High -power LED packaging structure of back -off formula small -size |
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| CN104966774A (en) | 2015-10-07 |
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