CN105845807A - Flip chip package structure of light-emitting diode - Google Patents
Flip chip package structure of light-emitting diode Download PDFInfo
- Publication number
- CN105845807A CN105845807A CN201610357488.2A CN201610357488A CN105845807A CN 105845807 A CN105845807 A CN 105845807A CN 201610357488 A CN201610357488 A CN 201610357488A CN 105845807 A CN105845807 A CN 105845807A
- Authority
- CN
- China
- Prior art keywords
- groove
- electrode slice
- package structure
- conducting bracket
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 50
- 230000003287 optical effect Effects 0.000 claims description 20
- 239000000853 adhesive Substances 0.000 claims description 17
- 230000001070 adhesive effect Effects 0.000 claims description 17
- 238000005253 cladding Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000012945 sealing adhesive Substances 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a flip chip package structure of a light-emitting diode. The flip chip package structure of the light-emitting diode comprises a conductive support, a connection material, a sealing adhesive material and a light-emitting diode module, wherein the conductive support is provided with at least one flip chip region and at least one groove and comprises at least one first electrode plate and at least one second electrode plate, a through groove is formed between the first electrode plate and the second electrode plate, the groove encircles the flip chip region, the groove and a part of the through groove jointly form a rectangular annular region, the connection material is arranged on the flip chip region of the conductive support, the sealing adhesive material is arranged in a groove so as to limit the flowing range of the connection material, and the light-emitting diode module is arranged on the flip chip region and is arranged on the connection material.
Description
The application be applicant on May 7th, 2012 submit to, Application No. " 201210137850.7 ",
The divisional application of the application for a patent for invention of invention entitled " flip chip package structure of LED ".
Technical field
The invention relates to a kind of encapsulating structure, and in particular to a kind of light emitting diode chip package knot
Structure.
Background technology
Along with the development of semiconductor technology, various semiconductor light sources are constantly weeded out the old and bring forth the new.For example, light-emitting diodes
Pipe is within it combined by electrons and holes and produces electroluminescent effect.The wavelength of the light of light emitting diode and its
The semi-conducting material kind used is relevant with alloy.Light emitting diode has efficiency height, life-span length, the most fragile
The advantage such as damage, switching speed height, high reliability so that light emitting diode has been widely used for various electronic product.
Light emitting diode can form an encapsulating structure by packaging technology, to avoid light emitting diode to make moist or to be subject to
Atomic pollution.In the evolution of package structure for LED, researcher is constantly promoting luminous two
Pole pipe is arranged at the precision in encapsulating structure, to provide good luminous efficiency.
Summary of the invention
One embodiment of the invention provides a kind of flip chip package structure of LED, and it utilizes the design of groove so that
Light-emitting diode (LED) module can be arranged on the ad-hoc location in encapsulating structure accurately.
Flip chip package structure of LED includes a conducting bracket, a joint material according to an embodiment of the invention
Material, an adhesive material and a light-emitting diode (LED) module.Conducting bracket has at least one flip district and at least one groove.
Conducting bracket includes at least one first electrode slice and at least one second electrode slice.One runs through groove is arranged at the first electrode slice
And second between electrode slice.Groove is around flip district.Groove and run through the some of groove and be collectively forming a rectangular ring
Region.Grafting material is arranged in the flip district of conducting bracket.Adhesive material is arranged in groove, to limit joint
The flow range of material.Light-emitting diode (LED) module is positioned at flip district, and is arranged on grafting material.
According to an embodiment of the invention flip chip package structure of LED include, a conducting bracket, a seal glue
Material and a light-emitting diode (LED) module.Conducting bracket has at least one groove.Conducting bracket includes at least one first electrode
Sheet and at least one second electrode slice.One runs through groove is arranged between the first electrode slice and the second electrode slice.Groove extends
In the first electrode slice and the second electrode slice.Groove and run through the some of groove and be collectively forming a rectangular ring region.Envelope
Glue material cladding part conducting bracket is also inserted groove and runs through groove.Light-emitting diode (LED) module chip bonding is in conduction
Frame, and light-emitting diode (LED) module is positioned at rectangular ring region.
For the foregoing of the present invention can be become apparent, special embodiment below, and coordinate accompanying drawing, make in detail
It is described as follows:
Accompanying drawing explanation
Fig. 1 illustrates the schematic diagram of the flip chip package structure of LED of one embodiment of the invention.
Fig. 2 illustrates the schematic diagram of the conducting bracket of the flip chip package structure of LED of Fig. 1.
Fig. 3 illustrates the fragmentary perspective view of the flip chip package structure of LED of Fig. 1.
Fig. 4 illustrates the schematic diagram of the flip chip package structure of LED of another embodiment.
Fig. 5 illustrates the fragmentary perspective view of the flip chip package structure of LED of Fig. 4.
Fig. 6 illustrates the schematic diagram of light emitting diode chip package module according to another embodiment of the present invention.
Fig. 7 illustrates the perspective view of the light emitting diode chip package module of Fig. 6.
Main element symbol description:
100,200,300: flip chip package structure of LED
110,210,310,410: conducting bracket
111,311,411: the first electrode slice
112,312,412: the second electrode slice
113,213,313,413: flip district
114,214,314: groove
115: run through groove
120: grafting material
130,230,330: adhesive material
132: transparent adhesive material
140,340,440: light-emitting diode (LED) module
150,250,350: recessed cup structure
151,251,351: opening
215,315: recess channels
D1: distance
H1: the degree of depth
H2: thickness
W1: width
Detailed description of the invention
Embodiment set forth below is described in detail, embodiment only in order to illustrate as example, can't limit this
The bright scope to be protected.Additionally, the graphic omission portion of element in embodiment, to clearly show that the technology of the present invention
Feature.
Refer to Fig. 1, it illustrates the signal of kind flip chip package structure of LED 100 of one embodiment of the invention
Figure.Flip chip package structure of LED 100 mainly includes conducting bracket 110, grafting material 120,
Adhesive material 130, one transparent adhesive material 132 and a light-emitting diode (LED) module 140.For convenience of explanation, figure
The transparent adhesive material 132 of 1 illustrates in the way of perspective.
Fig. 2 illustrates the conducting bracket 110 of Fig. 1, and it has at least one flip district 113 and at least one groove 114.
Flip district 113 is in order to arrange light-emitting diode (LED) module 140 (seeing Fig. 1).The shape in flip district 113 can be near
It is similar to the shape of light-emitting diode (LED) module 140 (being illustrated in Fig. 1).Conducting bracket 110 includes one first electrode slice
111 and one second electrode slice 112.First electrode slice 111 and the second electrode slice 112 are e.g. respectively coupled to send out
The anode of optical diode module 140 and negative electrode；Or the first electrode slice 111 and the second electrode slice 112 e.g. divide
It is not coupled to negative electrode and the anode of light-emitting diode (LED) module 140.One runs through groove 115 is arranged at the first electrode slice 111
And second between electrode slice 112.Groove 114 extends the first electrode slice 111 and the second electrode slice 112, and
Around flip district 113.Groove 114 and run through the some of groove 115 and be collectively forming a rectangular ring region.Conduction
The material of support 110 e.g. copper (Cu), iron (Fe), nickel (Ni) and combinations thereof.Conducting bracket 110
Lower surface is exposed to bottom encapsulating structure 100 in order to be connected with exposed electrical.
Adhesive material 130 cladding part conducting bracket 110, and insert groove 114 and run through groove 115.Insert and pass through
The adhesive material 130 wearing groove 115 makes the first electrode slice 111 be electrically insulated from the second electrode slice 112.Adhesive material
130 in order to protect conducting bracket 110, to avoid conducting bracket 110 make moist or affected by particulate.Seal glue
Material 130 e.g. epoxy resin (epoxy) organic siliconresin (sillicone resin) or polyurethane (polyurethane).
As it is shown in figure 1, grafting material 120 is arranged at the flip district 113 (being illustrated in Fig. 2) of conducting bracket 110
On.Grafting material 120 is covered by light-emitting diode (LED) module 140, therefore is represented by dotted lines.Grafting material 120
For Sn-containing alloy solder, its unwelded previous as be added with scaling powder and form paste.
Light-emitting diode (LED) module 140 in order to emit beam, the e.g. Encapsulation Moulds of at least one light-emitting diode chip for backlight unit
Block or the bare chip of light-emitting diode chip for backlight unit.Light-emitting diode (LED) module 140 is fixedly arranged on via grafting material 120
The flip district 113 (being illustrated in Fig. 2) of conducting bracket 110.During reflow (reflow), it is arranged at recessed
Adhesive material 130 (being illustrated in Fig. 1) in groove 114 will not engage with grafting material 120, and limits joint
The flow range of material 120.Therefore, light-emitting diode (LED) module 140, after reflow, can be correctly positioned to cover
In crystalline region 113 (being illustrated in Fig. 2), without arbitrarily offseting along with grafting material 120.Relatively, if in
Conducting bracket 110 is not provided with the groove 114 around flip district 113, when carrying out reflow (reflow) step,
Grafting material 120 by flip district 113 outwardly, and may cause light-emitting diode (LED) module 140 deviation to be preset
Position.
Refer to Fig. 2, in the present embodiment, groove 114 is more than 50 microns with distance D1 in flip district 113
(micron), the width W1 of groove 114 is essentially 0.2 millimeter (mm), the depth H 1 of groove 114
It is essentially the thickness H2 of 1/2 times of conducting bracket 110.
Additionally, as it is shown on figure 3, the flip chip package structure of LED 100 of the present embodiment further includes a recessed cup knot
Structure 150 (being represented by dotted lines).Recessed cup structure 150 is arranged on conducting bracket 110.Recessed cup structure 150 has one
Opening 151.Recessed cup structure 150 can avoid light emitting diode 140 directly to be clashed into, and can provide suitable
Light refraction or reflection path.Light-emitting diode (LED) module 140 is arranged at opening 151.Recessed cup structure 150 with set
The adhesive material 130 (being illustrated in Fig. 1) being placed in groove 114 can be one-body molded.
Transparent adhesive material 132 fills up recessed cup structure 150 and is coated with light-emitting diode (LED) module 140 to avoid conduction
Frame 110 and light-emitting diode (LED) module 140 make moist or are affected by particulate.
In order to clearly show groove 114, Fig. 3 eliminates the adhesive material 130 being filled in groove 114.As
Shown in Fig. 3, groove 114 is the groove 114 that a rectangular configuration and recessed cup structure 150 are overlapped in part.Such one
Coming, groove 114 partly can be as suitable mould circulation road with overlapping of recessed cup structure 150；Additionally, recessed cup knot
Structure 150 also is able to promote recessed cup structure 150 and the adhesion of conducting bracket 110 with the part that overlaps of groove 114.
Refer to Fig. 4, it illustrates the schematic diagram of flip chip package structure of LED 200 of another embodiment.?
In the case of the area in flip district 213 is much smaller than the opening 251 of recessed cup structure 250, groove 214 will not be overlapped in
Recessed cup structure 250.Therefore, the conducting bracket of encapsulating structure 200 separately includes that at least one recess channels 215 (sees figure
5) corner of groove 214 it is connected to.
Refer to Fig. 5, it illustrates the perspective view of flip chip package structure of LED 200 of Fig. 4.In order to clear
Show groove 214 and recess channels 215 at Fig. 5, therefore eliminate, at Fig. 5, the sealing being filled in groove 214
Material 230 (being illustrated in Fig. 4).Although recessed cup structure 250 is not overlapped in groove 214, but recess channels 215
At least part overlaps with recessed cup structure 250.Consequently, it is possible to recess channels 215 can be as suitable mould circulation
Road；Additionally, recess channels 215 also is able to the adhesion promoting recessed cup structure 250 with conducting bracket 210.
Refer to Fig. 6, it illustrates light emitting diode chip package module 300 according to another embodiment of the present invention
Schematic diagram.In this embodiment, package module 300 comprises two light-emitting diode (LED) modules 340 and is respectively arranged at two
In individual flip district 313.
Fig. 7 illustrates the perspective view of the light emitting diode chip package module 300 of Fig. 6.In order to clear at Fig. 7
Show groove 314, therefore eliminate, at Fig. 7, the adhesive material 330 (being illustrated in Fig. 6) being filled in groove 314.
Two light-emitting diode (LED) modules 340 are electrically connected with in the first electrode slice 311 and the second electrode slice 312, with shape
Become a parallel-connection structure.The opening 351 of recessed cup structure 350 can accommodate two light-emitting diode (LED) modules 340 so that
The light of two light-emitting diode (LED) modules 340 can be reflected by recessed cup structure 350 or be reflected.
Conducting bracket 310 includes groove 314 and a recess channels 315, and recess channels 315 connects groove 314.
Although recessed cup structure 350 part is overlapped in groove 314, but recess channels 315 can further provide for extra mould stream
Passage；Additionally, recess channels 315 also is able to the adhesion promoting recessed cup structure 350 with conducting bracket 310.
The rest may be inferred, and the quantity of light emitting diode and the quantity in flip district can be two, three, even four
Above.The quantity of the first electrode slice and the second electrode slice can also be two, even two or more.In various realities
Executing in example, each flip district all can be by the cincture of groove institute.
In sum, although the present invention is disclosed above with embodiment, and so it is not limited to the present invention.This
Bright art has usually intellectual, without departing from the spirit and scope of the present invention, various when making
Change and retouching.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (10)
1. an optical package structure, including:
One conducting bracket, has at least one crystalline setting area and at least one groove, and described conducting bracket includes:
At least one first electrode slice；And
At least one second electrode slice, one run through groove be arranged at described first electrode slice and described second electrode slice it
Between, described groove is around described crystalline setting area；
One grafting material, is arranged on the described crystalline setting area of described conducting bracket；
One adhesive material, is arranged in described groove and is exposed to the upper surface of conducting bracket to limit described joint material
The flow range of material；And
At least one optical module, is positioned at described crystalline setting area, and is arranged on described grafting material.
2. optics optical package structure as claimed in claim 1, wherein said optical module is at least one optics
The package module of chip or an optical chip or light-emitting diode chip for backlight unit.
3. optical package structure as claimed in claim 1, wherein said groove is big with the distance of described crystalline setting area
In 50 microns.
4. optical package structure as claimed in claim 1, the width of wherein said groove is 0.2 millimeter.
5. optical package structure as claimed in claim 1, the degree of depth of wherein said groove is 1/2 times of described conduction
The thickness of support.
6. optical package structure as claimed in claim 1, further includes:
One recessed cup structure, is arranged on described conducting bracket, and described recessed cup structure has an opening, described optical mode
Block is arranged at described opening part.
7. optical package structure as claimed in claim 6, wherein said groove is a rectangular configuration, described recessed
Cup structure is overlapped in the described groove of part.
8. optical package structure as claimed in claim 6, wherein said conducting bracket separately includes a recess channels,
Described recess channels connects described groove, and described recess channels at least part overlaps with described recessed cup structure.
9. optical package structure as claimed in claim 1, the quantity of wherein said at least one optical module is two
Individual, described optical module is all electrically connected at described first electrode slice and described second electrode slice.
10. an optical package structure, including:
One conducting bracket, has at least one groove and a crystalline setting area, and described conducting bracket includes:
At least one first electrode slice；And
At least one second electrode slice, one run through groove be arranged at described first electrode slice and described second electrode slice it
Between, described groove extends described first electrode slice and described second electrode slice, described groove and described in run through groove
Some is collectively forming an annular section, and described groove is around described crystalline setting area；
One grafting material, is arranged on the described crystalline setting area of described conducting bracket；
One adhesive material, the cladding described conducting bracket of part and insert described groove and described in run through groove and being exposed to and lead
The upper surface of electricity support is to limit the flow range of grafting material；And
One optical module, puts crystalline substance and is engaged in described conducting bracket, and described optical module is positioned at described rectangular ring
In region, described optical module is arranged on described grafting material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610357488.2A CN105845807A (en) | 2012-05-07 | 2012-05-07 | Flip chip package structure of light-emitting diode |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210137850.7A CN102832315B (en) | 2012-05-07 | 2012-05-07 | Flip chip package structure of LED |
| CN201610357488.2A CN105845807A (en) | 2012-05-07 | 2012-05-07 | Flip chip package structure of light-emitting diode |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210137850.7A Division CN102832315B (en) | 2012-05-07 | 2012-05-07 | Flip chip package structure of LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105845807A true CN105845807A (en) | 2016-08-10 |
Family
ID=47335362
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210137850.7A Active CN102832315B (en) | 2012-05-07 | 2012-05-07 | Flip chip package structure of LED |
| CN201610357488.2A Pending CN105845807A (en) | 2012-05-07 | 2012-05-07 | Flip chip package structure of light-emitting diode |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210137850.7A Active CN102832315B (en) | 2012-05-07 | 2012-05-07 | Flip chip package structure of LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN102832315B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830588A (en) * | 2019-01-24 | 2019-05-31 | 安徽盛烨电子有限公司 | A kind of lead frame of LED support, LED support manufacturing process and LED support |
| CN113644185A (en) * | 2021-07-14 | 2021-11-12 | 深圳市定千亿电子有限公司 | LED chip support and LED lamp pearl |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832315B (en) * | 2012-05-07 | 2016-06-29 | 日月光半导体制造股份有限公司 | Flip chip package structure of LED |
| CN109560183B (en) * | 2015-04-29 | 2020-04-17 | 光宝光电(常州)有限公司 | Multi-layer circuit board and light emitting diode packaging structure |
| CN114335290A (en) * | 2019-08-13 | 2022-04-12 | 光宝光电(常州)有限公司 | Packaging structure |
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| KR20090032866A (en) * | 2007-09-28 | 2009-04-01 | 서울반도체 주식회사 | Led package with its interfacial delamination reduced |
| CN201508851U (en) * | 2009-09-04 | 2010-06-16 | 复盛股份有限公司 | LED bracket structure |
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| CN102163655A (en) * | 2010-12-31 | 2011-08-24 | 东莞市万丰纳米材料有限公司 | Preparation method of LED (light-emitting diode) packaging module |
| CN102201525A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light emitting device package and lighting system having the same |
| CN102832315B (en) * | 2012-05-07 | 2016-06-29 | 日月光半导体制造股份有限公司 | Flip chip package structure of LED |
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2012
- 2012-05-07 CN CN201210137850.7A patent/CN102832315B/en active Active
- 2012-05-07 CN CN201610357488.2A patent/CN105845807A/en active Pending
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|---|---|---|---|---|
| KR20090032866A (en) * | 2007-09-28 | 2009-04-01 | 서울반도체 주식회사 | Led package with its interfacial delamination reduced |
| CN201508851U (en) * | 2009-09-04 | 2010-06-16 | 复盛股份有限公司 | LED bracket structure |
| JP2011119557A (en) * | 2009-12-07 | 2011-06-16 | Sony Corp | Light emitting device, and method of manufacturing the same |
| CN102201525A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light emitting device package and lighting system having the same |
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| CN102832315B (en) * | 2012-05-07 | 2016-06-29 | 日月光半导体制造股份有限公司 | Flip chip package structure of LED |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830588A (en) * | 2019-01-24 | 2019-05-31 | 安徽盛烨电子有限公司 | A kind of lead frame of LED support, LED support manufacturing process and LED support |
| CN113644185A (en) * | 2021-07-14 | 2021-11-12 | 深圳市定千亿电子有限公司 | LED chip support and LED lamp pearl |
| CN113644185B (en) * | 2021-07-14 | 2023-12-29 | 深圳市源科光电有限公司 | LED chip support and LED lamp pearl |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102832315B (en) | 2016-06-29 |
| CN102832315A (en) | 2012-12-19 |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160810 |