CN102832315B - Flip chip package structure of LED - Google Patents
Flip chip package structure of LED Download PDFInfo
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- CN102832315B CN102832315B CN201210137850.7A CN201210137850A CN102832315B CN 102832315 B CN102832315 B CN 102832315B CN 201210137850 A CN201210137850 A CN 201210137850A CN 102832315 B CN102832315 B CN 102832315B
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- led
- groove
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- electrode slice
- emitting diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
A kind of flip chip package structure of LED.Flip chip package structure of LED includes a conducting bracket, a grafting material, an adhesive material and a light-emitting diode (LED) module.Conducting bracket has at least one flip district and at least one groove.Conducting bracket includes at least one first electrode slice and at least one second electrode slice.One runs through groove is arranged between the first electrode slice and the second electrode slice.Groove surrounds flip district.Groove and run through the part of groove and be collectively forming a rectangular ring region.Grafting material is arranged in the flip district of conducting bracket.Adhesive material is arranged in groove, to limit the flow range of grafting material.Light-emitting diode (LED) module is positioned at flip district, and is arranged on grafting material.
Description
Technical field
The invention relates to a kind of encapsulating structure, and in particular to a kind of flip chip package structure of LED.
Background technology
Along with the development of semiconductor technology, various semiconductor light sources are constantly weeded out the old and bring forth the new.For example, light emitting diode is within it combined by electrons and holes and produces electroluminescent effect.The semi-conducting material kind that the wavelength of the light of light emitting diode adopts with it is relevant with alloy.Light emitting diode has the advantages such as efficiency height, life-span length, not cracky, switching speed height, high reliability so that light emitting diode has been widely used for various electronic product.
Light emitting diode can form an encapsulating structure by packaging technology, to avoid light emitting diode to make moist or to be subject to atomic pollution.In the evolution of package structure for LED, research worker is constantly arranged at the precision in encapsulating structure promoting light emitting diode, to provide good luminous efficiency.
Summary of the invention
One embodiment of the invention provides a kind of flip chip package structure of LED, and it utilizes the design of groove so that light-emitting diode (LED) module can be arranged on the ad-hoc location in encapsulating structure accurately.
Flip chip package structure of LED includes a conducting bracket, a grafting material, an adhesive material and a light-emitting diode (LED) module according to an embodiment of the invention.Conducting bracket has at least one flip district and at least one groove.Conducting bracket includes at least one first electrode slice and at least one second electrode slice.One runs through groove is arranged between the first electrode slice and the second electrode slice.Groove surrounds flip district.Groove and run through the some of groove and be collectively forming a rectangular ring region.Grafting material is arranged in the flip district of conducting bracket.Adhesive material is arranged in groove, to limit the flow range of grafting material.Light-emitting diode (LED) module is positioned at flip district, and is arranged on grafting material.
According to an embodiment of the invention flip chip package structure of LED include, a conducting bracket, an adhesive material and a light-emitting diode (LED) module.Conducting bracket has at least one groove.Conducting bracket includes at least one first electrode slice and at least one second electrode slice.One runs through groove is arranged between the first electrode slice and the second electrode slice.Groove extends the first electrode slice and the second electrode slice.Groove and run through the some of groove and be collectively forming a rectangular ring region.Adhesive material cladding part conducting bracket is also inserted groove and runs through groove.Light-emitting diode (LED) module chip bonding is in conducting bracket, and light-emitting diode (LED) module is positioned at rectangular ring region.
For the foregoing of the present invention can be become apparent, special embodiment below, and coordinate accompanying drawing, it is described in detail below:
Accompanying drawing explanation
Fig. 1 illustrates the schematic diagram of the flip chip package structure of LED of one embodiment of the invention.
Fig. 2 illustrates the schematic diagram of the conducting bracket of the flip chip package structure of LED of Fig. 1.
Fig. 3 illustrates the fragmentary perspective view of the flip chip package structure of LED of Fig. 1.
Fig. 4 illustrates the schematic diagram of the flip chip package structure of LED of another embodiment.
Fig. 5 illustrates the fragmentary perspective view of the flip chip package structure of LED of Fig. 4.
Fig. 6 illustrates the schematic diagram of light emitting diode chip package module according to another embodiment of the present invention.
Fig. 7 illustrates the perspective view of the light emitting diode chip package module of Fig. 6.
Main element symbol description:
100,200,300: flip chip package structure of LED
110,210,310,410: conducting bracket
111,311,411: the first electrode slice
112,312,412: the second electrode slice
113,213,313,413: flip district
114,214,314: groove
115: run through groove
120: grafting material
130,230,330: adhesive material
132: transparent adhesive material
140,340,440: light-emitting diode (LED) module
150,250,350: recessed cup structure
151,251,351: opening
215,315: recess channels
D1: distance
H1: the degree of depth
H2: thickness
W1: width
Detailed description of the invention
Embodiment set forth below is described in detail, embodiment only in order to illustrate as example, can't the limit present invention be intended to protection scope.Additionally, the graphic omission portion of element in embodiment, to clearly show that the technical characterstic of the present invention.
Refer to Fig. 1, it illustrates the schematic diagram of kind flip chip package structure of LED 100 of one embodiment of the invention.Flip chip package structure of LED 100 mainly includes conducting bracket 110, grafting material 120, adhesive material 130, transparent adhesive material 132 and a light-emitting diode (LED) module 140.Illustrating in order to convenient, the transparent adhesive material 132 of Fig. 1 illustrates in the way of perspective.
Fig. 2 illustrates the conducting bracket 110 of Fig. 1, and it has at least one flip district 113 and at least one groove 114.Flip district 113 is in order to arrange light-emitting diode (LED) module 140(referring to Fig. 1).The shape in flip district 113 can be similar to light-emitting diode (LED) module 140(and be illustrated in Fig. 1) shape.Conducting bracket 110 includes one first electrode slice 111 and one second electrode slice 112.First electrode slice 111 and the second electrode slice 112 are such as the anode and the negative electrode that are respectively coupled to light-emitting diode (LED) module 140；Or the first electrode slice 111 and the second electrode slice 112 are such as the negative electrode and the anode that are respectively coupled to light-emitting diode (LED) module 140.One runs through groove 115 is arranged between the first electrode slice 111 and the second electrode slice 112.Groove 114 extends the first electrode slice 111 and the second electrode slice 112, and around flip district 113.Groove 114 and run through the some of groove 115 and be collectively forming a rectangular ring region.The material of conducting bracket 110 is such as copper (Cu), ferrum (Fe), nickel (Ni) and combination thereof.Conducting bracket 110 lower surface is exposed to bottom encapsulating structure 100 in order to be connected with exposed electrical.
Adhesive material 130 cladding part conducting bracket 110, and insert groove 114 and run through groove 115.Inserting the adhesive material 130 running through groove 115 makes the first electrode slice 111 be electrically insulated from the second electrode slice 112.Adhesive material 130 is in order to protect conducting bracket 110, to avoid conducting bracket 110 to make moist or to be subject to micropartical impact.Adhesive material 130 is such as epoxy resin (epoxy) organic siliconresin (silliconeresin) or polyurethane (polyurethane).
As it is shown in figure 1, the flip district 113(that grafting material 120 is arranged at conducting bracket 110 is illustrated in Fig. 2) on.Grafting material 120 is covered by light-emitting diode (LED) module 140, therefore is represented by dotted lines.Grafting material 120 is Sn-containing alloy solder, its do not weld previous as be added with scaling powder and form paste.
Light-emitting diode (LED) module 140 is in order to emit beam, for instance be the bare chip of the package module of at least one light-emitting diode chip for backlight unit or light-emitting diode chip for backlight unit.The flip district 113(that light-emitting diode (LED) module 140 is fixedly arranged on conducting bracket 110 via grafting material 120 is illustrated in Fig. 2).In reflow (reflow) process, the adhesive material 130(being arranged in groove 114 is illustrated in Fig. 1) will not engage with grafting material 120, and limit the flow range of grafting material 120.Therefore, light-emitting diode (LED) module 140 is after reflow, it is possible to is correctly positioned to flip district 113(and is illustrated in Fig. 2) in, without arbitrarily offseting along with grafting material 120.Relatively, if be not provided with surrounding the groove 114 in flip district 113 in conducting bracket 110, when carrying out reflow (reflow) step, grafting material 120 by flip district 113 outwardly, and may cause that light-emitting diode (LED) module 140 deviates predeterminated position.
Refer to Fig. 2, in the present embodiment, the distance D1 in groove 114 and flip district 113 is more than 50 microns (micron), and the width W1 of groove 114 is essentially 0.2 millimeter (mm), and the depth H 1 of groove 114 is essentially the thickness H2 of 1/2 times of conducting bracket 110.
Additionally, as it is shown on figure 3, the flip chip package structure of LED 100 of the present embodiment more includes a recessed cup structure 150 (being represented by dotted lines).Recessed cup structure 150 is arranged on conducting bracket 110.Recessed cup structure 150 has an opening 151.Recessed cup structure 150 can avoid light emitting diode 140 to be directly subjected to clash into, and can provide suitable light refraction or reflection path.Light-emitting diode (LED) module 140 is arranged at opening 151 place.Recessed cup structure 150 and the adhesive material 130(being arranged at groove 114 are illustrated in Fig. 1) can be one-body molded.
Transparent adhesive material 132 fills up recessed cup structure 150 and is coated with light-emitting diode (LED) module 140 to avoid conducting bracket 110 and light-emitting diode (LED) module 140 to make moist or to be subject to micropartical impact.
In order to know that showing groove 114, Fig. 3 eliminates the adhesive material 130 being filled in groove 114.As it is shown on figure 3, groove 114 is the groove 114 that a rectangular configuration and recessed cup structure 150 are overlapped in part.Consequently, it is possible to groove 114 partly can as suitable mould circulation road with overlapping of recessed cup structure 150；Additionally, recessed cup structure 150 also partly is able to promote the adhesion of recessed cup structure 150 and conducting bracket 110 with overlapping of groove 114.
Refer to Fig. 4, it illustrates the schematic diagram of flip chip package structure of LED 200 of another embodiment.When the area in flip district 213 is much smaller than opening 251 of recessed cup structure 250, groove 214 will not be overlapped in recessed cup structure 250.Therefore, the conducting bracket of encapsulating structure 200 separately includes at least one recess channels 215 (referring to Fig. 5) and is connected to a corner of groove 214.
Refer to Fig. 5, it illustrates the perspective view of flip chip package structure of LED 200 of Fig. 4.Show groove 214 and recess channels 215 at Fig. 5 in order to know, therefore eliminate, at Fig. 5, the adhesive material 230(being filled in groove 214 and be illustrated in Fig. 4).Although recessed cup structure 250 is not overlapped in groove 214, but recess channels 215 has at least part to overlap with recessed cup structure 250.Consequently, it is possible to recess channels 215 can as suitable mould circulation road；Additionally, recess channels 215 also is able to the adhesion promoting recessed cup structure 250 with conducting bracket 210.
Refer to Fig. 6, it illustrates the schematic diagram of light emitting diode chip package module 300 according to another embodiment of the present invention.In this embodiment, package module 300 comprises two light-emitting diode (LED) modules 340 and is respectively arranged in Liang Ge flip district 313.
Fig. 7 illustrates the perspective view of the light emitting diode chip package module 300 of Fig. 6.Show groove 314 in order to know at Fig. 7, therefore eliminate, at Fig. 7, the adhesive material 330(being filled in groove 314 and be illustrated in Fig. 6).Two light-emitting diode (LED) modules 340 are electrically connected with in the first electrode slice 311 and the second electrode slice 312, to form a parallel-connection structure.The opening 351 of recessed cup structure 350 can hold two light-emitting diode (LED) modules 340 so that the light of two light-emitting diode (LED) modules 340 can both pass through recessed cup structure 350 and carry out reflecting or reflecting.
Conducting bracket 310 includes groove 314 and a recess channels 315, and recess channels 315 connects groove 314.Although recessed cup structure 350 part is overlapped in groove 314, but recess channels 315 can further provide for extra mould circulation road；Additionally, recess channels 315 also is able to the adhesion promoting recessed cup structure 350 with conducting bracket 310.
The rest may be inferred, and the quantity of light emitting diode and the quantity in flip district can be two, three or even more than four.The quantity of the first electrode slice and the second electrode slice can also be two or even two or more.In various embodiments, each flip district all can be surrounded by groove.
In sum, although the present invention is disclosed above with embodiment, and so it is not limited to the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (10)
1. a flip chip package structure of LED, including:
One conducting bracket, has at least one flip district and at least one groove, and described conducting bracket includes:
At least one first electrode slice；And
At least one second electrode slice, one runs through groove is arranged between described first electrode slice and described second electrode slice, and described groove surrounds described flip district；
One grafting material, is arranged in the described flip district of described conducting bracket；
One adhesive material, is arranged in described groove and is exposed to the upper surface of conducting bracket to limit the flow range of described grafting material；And
At least one light-emitting diode (LED) module, is positioned at described flip district, and is arranged on described grafting material.
2. flip chip package structure of LED as claimed in claim 1, wherein said light-emitting diode (LED) module is package module or a light-emitting diode chip for backlight unit of at least one light-emitting diode chip for backlight unit.
3. flip chip package structure of LED as claimed in claim 1, the distance in wherein said groove and described flip district is more than 50 microns.
4. flip chip package structure of LED as claimed in claim 1, the width of wherein said groove is 0.2 millimeter.
5. flip chip package structure of LED as claimed in claim 1, the degree of depth of wherein said groove is the thickness of 1/2 times of described conducting bracket.
6. flip chip package structure of LED as claimed in claim 1, more includes:
One recessed cup structure, is arranged on described conducting bracket, and described recessed cup structure has an opening, and described light-emitting diode (LED) module is arranged at described opening part.
7. flip chip package structure of LED as claimed in claim 6, wherein said groove is a rectangular configuration, and described recessed cup structure is overlapped in the described groove of part.
8. flip chip package structure of LED as claimed in claim 6, wherein said conducting bracket separately includes a recess channels, and described recess channels connects described groove, and described recess channels has at least part to overlap with described recessed cup structure.
9. flip chip package structure of LED as claimed in claim 1, the quantity of wherein said at least one light-emitting diode (LED) module is two, and described light-emitting diode (LED) module is all electrically connected at described first electrode slice and described second electrode slice.
10. a flip chip package structure of LED, including:
One conducting bracket, has at least one groove and a flip district, and described conducting bracket includes:
At least one first electrode slice；And
At least one second electrode slice, one runs through groove is arranged between described first electrode slice and described second electrode slice, described groove extends described first electrode slice and described second electrode slice, described groove and described in run through the some of groove and be collectively forming a rectangular ring region, described groove surrounds described flip district；
One grafting material, is arranged in the described flip district of described conducting bracket；
One adhesive material, the cladding described conducting bracket of part and insert described groove and described in run through groove and be exposed to the upper surface of conducting bracket to limit the flow range of grafting material；And
One light-emitting diode (LED) module, chip bonding is in described conducting bracket, and described light-emitting diode (LED) module is positioned at described rectangular ring region, and described light-emitting diode (LED) module is arranged on described grafting material.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610357488.2A CN105845807A (en) | 2012-05-07 | 2012-05-07 | Flip chip package structure of light-emitting diode |
| CN201210137850.7A CN102832315B (en) | 2012-05-07 | 2012-05-07 | Flip chip package structure of LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210137850.7A CN102832315B (en) | 2012-05-07 | 2012-05-07 | Flip chip package structure of LED |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610357488.2A Division CN105845807A (en) | 2012-05-07 | 2012-05-07 | Flip chip package structure of light-emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102832315A CN102832315A (en) | 2012-12-19 |
| CN102832315B true CN102832315B (en) | 2016-06-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210137850.7A Active CN102832315B (en) | 2012-05-07 | 2012-05-07 | Flip chip package structure of LED |
| CN201610357488.2A Pending CN105845807A (en) | 2012-05-07 | 2012-05-07 | Flip chip package structure of light-emitting diode |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610357488.2A Pending CN105845807A (en) | 2012-05-07 | 2012-05-07 | Flip chip package structure of light-emitting diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845807A (en) * | 2012-05-07 | 2016-08-10 | 日月光半导体制造股份有限公司 | Flip chip package structure of light-emitting diode |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560183B (en) * | 2015-04-29 | 2020-04-17 | 光宝光电(常州)有限公司 | Multi-layer circuit board and light emitting diode packaging structure |
| CN109830588A (en) * | 2019-01-24 | 2019-05-31 | 安徽盛烨电子有限公司 | A kind of lead frame of LED support, LED support manufacturing process and LED support |
| CN114335290A (en) * | 2019-08-13 | 2022-04-12 | 光宝光电(常州)有限公司 | Packaging structure |
| CN113644185B (en) * | 2021-07-14 | 2023-12-29 | 深圳市源科光电有限公司 | LED chip support and LED lamp pearl |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101374898B1 (en) * | 2007-09-28 | 2014-03-18 | 서울반도체 주식회사 | Led package with its interfacial delamination reduced |
| CN201508851U (en) * | 2009-09-04 | 2010-06-16 | 复盛股份有限公司 | LED bracket structure |
| JP2011119557A (en) * | 2009-12-07 | 2011-06-16 | Sony Corp | Light emitting device, and method of manufacturing the same |
| KR101064084B1 (en) * | 2010-03-25 | 2011-09-08 | 엘지이노텍 주식회사 | Light emitting device package and fabrication method thereof |
| CN102163655A (en) * | 2010-12-31 | 2011-08-24 | 东莞市万丰纳米材料有限公司 | Preparation method of LED (light-emitting diode) packaging module |
| CN102832315B (en) * | 2012-05-07 | 2016-06-29 | 日月光半导体制造股份有限公司 | Flip chip package structure of LED |
-
2012
- 2012-05-07 CN CN201210137850.7A patent/CN102832315B/en active Active
- 2012-05-07 CN CN201610357488.2A patent/CN105845807A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845807A (en) * | 2012-05-07 | 2016-08-10 | 日月光半导体制造股份有限公司 | Flip chip package structure of light-emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105845807A (en) | 2016-08-10 |
| CN102832315A (en) | 2012-12-19 |
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