CN206271704U

CN206271704U - Realize the wafer-level packaging of ultra-thin ambient light and proximity transducer

Info

Publication number: CN206271704U
Application number: CN201620731706.XU
Authority: CN
Inventors: 张珊珊; 林挺宇; 林海斌; 蔡旭
Original assignee: Arrow (xiamen) Technology Co Ltd
Current assignee: Ningbo De Wei Technology Co. Ltd.
Priority date: 2016-07-12
Filing date: 2016-07-12
Publication date: 2017-06-20
Anticipated expiration: 2026-07-12

Abstract

The utility model provides a kind of wafer-level packaging for realizing ultra-thin ambient light and proximity transducer, with photoinduction chip, luminescent wafer, optics sealing cover and anti-protective hood；Photoinduction chip is located in optics sealing cover, and optics sealing cover is located in anti-protective hood；Characterized in that, the bottom of the encapsulation is RDL wiring layers, the photoinduction chip and the RDL wiring layers are electrically connected by wire.The utility model has these technical characterstics, has reached and has abandoned purpose and effect that PCB substrate realizes slimming and efficient production.

Description

Realize the wafer-level packaging of ultra-thin ambient light and proximity transducer

Technical field

The utility model relates to the encapsulation technology of sensor, more particularly to a kind of ultra-thin ambient light and proximity transducer realized Wafer-level packaging.

Background technology

The miniaturization of smart machine is the miniaturization based on its component parts.Ambient light is combined with light sensation with proximity transducer Chip and luminescent wafer are answered, in traditional handicraft, this two kinds of chips are respectively adopted different wafer manufactures, recombinant to PCB substrate Upper encapsulation；Because PCB substrate is difficult to be thinned, the slimming development of this kind of sensor is constrained.

Utility model content

As it was previously stated, how to break through the technique bottleneck of PCB substrate, two kinds of differences are made the photoinduction chip and hair of technique Light chip realizes that the requirement for minimizing is the utility model problem to be solved again in being combined to an encapsulation；How to be lifted Packaging efficiency is the utility model first purpose to be reached to reduce production cost.

In order to reach the purpose of the utility model, the technical solution of the utility model is as follows.

The wafer-level packaging of ultra-thin ambient light and proximity transducer is realized, with photoinduction chip, luminescent wafer, optics envelope Cover and anti-protective hood；Photoinduction chip is located in optics sealing cover, and optics sealing cover is located in anti-protective hood；Characterized in that, described The bottom of encapsulation is RDL wiring layers, and the photoinduction chip and the RDL wiring layers are electrically connected by wire.

In certain embodiments, the bottom of the luminescent wafer and RDL wiring layers are electrically connected.

In certain embodiments, also it is implanted into or covering conductor in the bottom surface of RDL wiring layers,

In certain embodiments, it is described to be included in bottom surface in the bottom surface implantation of RDL wiring layers or the mode of covering conductor The one kind in metal pad or au bump or solder bump is generated on salient point bottom metal layer (UBM).

The utility model changes the technique for traditionally relying on PCB substrate, and reality is combined using RDL wiring layers and wire welding tech The existing wafer-level packaging；Change PCB substrate in technique and chip to be permanently fixed be interim fixation by shaping carrier and adhesive tape, The RDL wiring layers and chip formed with plating by etching are connected, and excuse me learns sealing cover and anti-protective hood locking chip；Shaping carrier Multiple chips combinations to be processed can simultaneously be carried, can to the whole chipset contracts on shaping carrier when make optics sealing cover and Anti- protective hood；Compared with single pcb board structure, quick wire bond (Wire Bonding) is also allowed for；Additionally, on provisional adhesive tape institute The RDL wiring layers of formation are not only especially advantageous for being processed when slimming design is additionally favorable for multiple chipset contracts, more can basis Replaced using wire bond (Wire Bonding) or RDL wiring layer process, RDL wiring layers on different propagation of electrical signals feature selecting ground The connection of the precursor Welding of a generation part can significantly improve packaging efficiency, retain a part of wire bond (Wire Bonding) work Skill can provide reliable guarantee for the lead of specific current requirement.The utility model has these technical characterstics, has reached and has abandoned PCB substrate realizes slimming and the efficiently purpose and effect of production.

Additionally, being formed using etching and electroplating technology more than RDL wiring layers, formed easily in the etching and plated edge of adhesive tape Stress, the Stress superposition that isolated island structure can completely cut off between each group encapsulation, the stress control etching and plating to adhesive tape System is very helpful to lifting encapsulation precision and raising yield in the range of isolated island.In addition, forming optics envelope using hot melt Adhesive tape forms isolated island structure in some implementations of cover and anti-protective hood, the heat of each group photoinduction chip and luminescent wafer along into The surface of type carrier is hindered when being outwards delivered to adjacent isolated island by insulating space, and heat is directed into main to vertical forming load The direction transmission of tool is simultaneously mainly distributed by shaping carrier, and this kind of feature can eliminate each group by Control Thermal Deformation in single isolated island The thermal deformation of photoinduction chip and luminescent wafer adds up, also very helpful to lifting encapsulation precision and raising yield.

Above generally describe some feature and advantage of the present utility model；However, the other spy for being given herein Levy, advantage and embodiment, or those of ordinary skill in the art for having checked the accompanying drawing of this paper, specification and claims It will be clear that other feature, advantage and embodiment.It should therefore be understood that scope of the present utility model should not be practical by this It is limitation disclosed in new summarized section.

Brief description of the drawings

Fig. 1 be embodiment encapsulation realize step a schematic diagrames；

Fig. 2 be embodiment encapsulation realize step b schematic diagrames；

Fig. 3 be embodiment encapsulation realize step c schematic diagrames；

Fig. 4 be embodiment encapsulation realize step d schematic diagrames；

Fig. 5 be embodiment encapsulation realize step e schematic diagrames；

Fig. 6 be embodiment encapsulation realize step f schematic diagrames；

Fig. 7 be embodiment encapsulation realize step g schematic diagrames；

Fig. 8 is the schematic diagram of embodiment encapsulation；

Fig. 9 is embodiment adhesive tape insulating space schematic diagram.

Drawing reference numeral explanation：

10 photoinduction chip, 11 wire, 20 luminescent wafer 30 is molded the adhesive tape of carrier 31

The conductor of 311 insulating space, 40 50 anti-protective hood of optics sealing cover 60

Accompanying drawing filling meets explanation：

What thicker solid black patch was represented is optics sealing cover and anti-protective hood；Vertical direction and thinner solid black patch expression Be silicon perforation；Horizontal direction and the expression of thinner solid black patch are RDL wiring layers；Elliptoid solid black patch expression is The bottom surface implantation of RDL wiring layers or the conductor of covering.

Specific embodiment

To enable above-mentioned purpose of the present utility model, feature and advantage more obvious understandable, embodiment will be below enumerated Specific embodiment of the present utility model is elaborated.Elaborate in the following description in order to fully understand this practicality New specific embodiment, but, the utility model can be implemented with different from mode described below, those skilled in the art Similar popularization can be done in the case of without prejudice to the utility model intension.Therefore, the utility model is not had by following discloses The limitation of body embodiment.

The present embodiment realizes ultra-thin ambient light with the wafer-level packaging of proximity transducer using as shown in Fig. 1 to Fig. 7 The step of step completion, Fig. 1 to Fig. 7, is as follows：

A. RDL wiring layers are prepared

B. the bottom of RDL wiring layers is attached on shaping carrier by adhesive tape；

C. photoinduction chip and luminescent wafer are welded on RDL wiring layers by Reflow Soldering or pressure sintering；

D. photoinduction chip and RDL wiring layers are connected using wire welding tech (Wire Bonding)；

E. luminescent wafer and photoinduction chip are wrapped up with light transmissive material and is shaped to optics sealing cover；

F. optics sealing cover is wrapped up with alternatively non-transparent material, is formed between luminescent wafer and photoinduction chip every light belt and be molded It is anti-protective hood；

G. it is to realize the wafer-level packaging to remove shaping carrier and its adhesive tape.

According to above-mentioned steps, the process of specific implementation is as follows.First, photoinduction chip 10, photoinduction chip 10 are got out It can be environment light sensor (Ambient Light Sensor) or close to inductor (Proximity Sensor) or preceding A combination of both structure, such as Fig. 1, it is demonstration that the present embodiment uses the structure of both combinations.Secondly, luminescent wafer is got out, this Embodiment luminescent wafer selects light emitting diode (LED) wafer, the wavelength that the light emitting diode lights to be selected with use requirement Select, wave-length coverage is not limited；The luminescent wafer that the present embodiment is demonstrated selects the less simple luminescent wafer of number of electrodes, at it The luminescent wafer with silicon hole can also be selected in his embodiment.

Again, such as Fig. 1, RDL wiring layers are prepared, the present embodiment RDL wiring layers are formed by etching and electroplating technology.

Such as Fig. 2, the shaping carrier 30 (Carrier) with silica gel adhesive tape 31 is got out, shaping carrier 30 elects smooth as Silicon chip；Adhesive tape 31 is from silica gel adhesive tape and sets insulating space 311, and isolated island is formed between adjacent insulating space 311, and light sensation is brilliant Piece 10 and luminescent wafer 20 will be placed on the isolated island.

As schemed, 3, by photoinduction chip 10 (Light Sensor Die) and luminescent wafer 20 (LED Die) respectively from it Each belonging to wafer on capture under, the photosurface of photoinduction chip 10 and the luminous of luminescent wafer 20 face up, another side Pass down through adhesive tape 31 to be fixed on carrier, another side passes down through scaling powder or fixing glue is fixed on RDL wiring layers, such as scheme 8, be integrally fixed in the present embodiment insulating space 311 around formed isolated island on.

Such as Fig. 4, using wire welding tech (Wire Bonding), with drawing, wire 11 connects photoinduction chip and RDL is connected up Layer.

Such as Fig. 5, using the moulding process of encapsulating injection molding 44, photoinduction chip 10 and the shape of luminescent wafer 20 are wrapped up with light transmissive material Into optics sealing cover 40, the present embodiment light transmissive material uses transparent thermosetting epoxy resin (EMC).

Such as Fig. 6, proceed secondary encapsulating injection molding, filled with alternatively non-transparent material and parcel optical lens sealing cover 40 and 20 shaping light extractions form anti-protective hood 50 every band between photoinduction chip 10 and luminescent wafer.The present embodiment alternatively non-transparent material Can be using materials such as thermoset material EMC, thermoplasticity PCT, MODIFIED PP A and class ceramoplastics.

Such as Fig. 7, remove shaping carrier 30 and its adhesive tape 10 realizes the wafer-level packaging.

As shown in figure 8, after the present embodiment Ultrathin packaging is completed, also can be with the salient point bottom of RDL wiring layers bottom surface gold The one kind in metal pad or au bump or solder bump is generated on categoryization layer (UBM), is easy to the sensor after cutting to encapsulate Monomer and outside mainboard welding.

The above, is only preferred embodiment of the present utility model, not makees any formal to the utility model Limitation.Any those skilled in the art, in the case where technical solutions of the utility model scope is not departed from, all using upper The technology contents for stating announcement make various possible variations and modification to technical solutions of the utility model, or are revised as equivalent variations Equivalent embodiments.Therefore, every content for not departing from technical solutions of the utility model, according to essence of the present utility model to Any simple modification, equivalent variation and modification that upper embodiment is done, belong to the protection domain of technical solutions of the utility model.

Claims

1. the wafer-level packaging of ultra-thin ambient light and proximity transducer is realized, with photoinduction chip, luminescent wafer, optics sealing cover With anti-protective hood；Photoinduction chip is located in optics sealing cover, and optics sealing cover is located in anti-protective hood；Characterized in that, the envelope The bottom of dress is RDL wiring layers, and the photoinduction chip and the RDL wiring layers are electrically connected by wire.

2. the wafer-level packaging for realizing ultra-thin ambient light and proximity transducer according to claim 1, it is characterised in that institute State bottom and the electrical connection of RDL wiring layers of luminescent wafer.

3. the wafer-level packaging for realizing ultra-thin ambient light and proximity transducer according to claim 1, it is characterised in that also Bottom surface implantation or covering conductor in RDL wiring layers.

4. the wafer-level packaging for realizing ultra-thin ambient light and proximity transducer according to claim 3, it is characterised in that institute State and be included in life on the salient point bottom metal layer (UBM) of bottom surface in the bottom surface implantation of RDL wiring layers or the mode of covering conductor One kind into metal pad or au bump or solder bump.