CN105489741A - Compression moulding packaging technology for LED flip-chip - Google Patents
Compression moulding packaging technology for LED flip-chip Download PDFInfo
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- CN105489741A CN105489741A CN201410479621.2A CN201410479621A CN105489741A CN 105489741 A CN105489741 A CN 105489741A CN 201410479621 A CN201410479621 A CN 201410479621A CN 105489741 A CN105489741 A CN 105489741A
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Abstract
The invention provides a compression moulding packaging technology for an LED flip-chip. The compression moulding packaging technology includes the following steps of: providing a plurality of LED chips having first surfaces and second surfaces, wherein the first surfaces have electrode areas; turning the LED chips to allow the first surfaces downward and allow the second surfaces upward; providing a high-temperature-resistant film, and attaching the high-temperature-resistant film on the first surfaces; packaging and covering the LED chips with package resin from the second surfaces in a compression moulding manner to form a package body, wherein electrodes of the first surfaces expose in the resin; removing the high-temperature-resistant film; cutting up the package body into a plurality of independent LED particles having the first surfaces and the second surfaces; and detecting and sorting the LED particles. The LED particles produced by the method can be directly applied to chip packaging, and can be directly welded to a substrate through tin paste, so that the LED particles are good in thermal conductivity, fast in heat dissipation and more reliable.
Description
[technical field]
The present invention relates to LED chip technical field, particularly LED chip upside-down mounting overmold operation.
[background technology]
In LED technology, packing forms is varied, and conventional existing method for packing has support to arrange encapsulation and paster encapsulation.Support row encapsulation adopts the earliest, is used for producing single LED component, namely our common wire type light-emitting diode.Paster encapsulation is a kind of non-leaded package, volume is little, thin, be well suited for the keyboard & display illumination making mobile phone, the back lighting of television set, and need the electronic product of illumination or instruction, paster is packaged with to large scale and high-power future development in recent years, and encapsulation three, four LED chips in a paster, can be used for assembling illuminating product.Module packaging is also a kind of multi-chip package technology, with less size, the multiple or dozens of LED chip of higher packaging density encapsulation on one piece of substrate, the inner on line mode of hybrid type that adopts forms a circuit, this encapsulation is mainly used for expanding power, and great majority are used for illuminating product.In the encapsulation of existing LED flip chip, on LED support or substrate, die bond solder paste is put by die bond equipment, also different according to the tin cream amount of different die size point, LED flip chip is bonded on a glue position, then the mode passing through Reflow Soldering makes flip-chip both positive and negative polarity metal level and support or substrate metal layer fuse, general use high temperature tin cream, used time 6-7 minute.After having welded, with pressing mold or the mode front cover layer packaging plastic on LED chip putting glue, toast after 2-6 hour and cut, finally complete test, the classification of particle being carried out to photoelectric parameter.In existing LED flip chip encapsulation, normally used crystal-bonding adhesive is high temperature tin cream, because shaped granule needs to cross Reflow Soldering again in SMT attachment, namely will consider that this kind of technology needs to carry out the problem of secondary back in encapsulation process, in the process of repeatedly carrying out Reflow Soldering, high temperature may impact particle itself.Also may cause unnecessary damage to flip-chip in the die bond stage, due to firm unlike the light-emitting area of front bottom flip-chip, it is easily worn impaired when die bond by thimble top, and causes the bad of follow-up finished particle simultaneously.Therefore need to look for the more convenient reliable technology of one to carry out alternative existing flip-chip packaging techniques.
[summary of the invention]
The object of the present invention is to provide a kind of overmold technique of LED flip chip, solve LED in problems such as particle are fragile in upside-down mounting process, reverse installation process is complicated.
In order to solve the problem, the invention provides a kind of overmold technique of LED flip chip, it comprises:
There is provided multiple LED chip with first surface and second surface, described first surface has electrode district;
Upset LED chip make first surface down, second surface upward;
One high temperature resistance diaphragm is provided, pastes described high temperature resistance diaphragm on the first surface;
Encapsulate coated described LED chip from described second surface in press mold mode with packaging plastic, form packaging body, the electrode of described first surface exposes to described colloid;
Remove described high temperature resistance diaphragm;
Cutting packaging body, forms multiple LED particle independently with first surface and second surface;
LED particle described in detection, sorting.
As a preferred embodiment of the present invention, the electrode district of the first surface of described LED chip has positive and negative electrode.
As a preferred embodiment of the present invention, described positive and negative electrode is symmetrical.
As a preferred embodiment of the present invention, the spacing between described positive and negative electrode is more than or equal to 150um.
As a preferred embodiment of the present invention, the electrode district of the first surface of described LED chip is coated with metal level, and described metal level is made up of conducting metal.
As a preferred embodiment of the present invention, the thickness of described metal level is 5-10um.
As a preferred embodiment of the present invention, described conducting metal comprise in gold, silver or copper any one.
As a preferred embodiment of the present invention, the heat resisting temperature of described high temperature resistance diaphragm is greater than 150 DEG C.
As a preferred embodiment of the present invention, described high temperature resistance diaphragm is UV film.
Compared with prior art, the overmold technique of LED flip chip of the present invention, be different from traditional paster encapsulation technology, this technology uses flip-chip, the support or substrate that use in conventional packaging techniques are given up, to be fixed on high temperature resistance diaphragm direct die press encapsulation by well-regulated for flip-chip, and then carry out cutting, sorting obtains the LED particle that needs.Because flip-chip light emitting face and electrode are in positive and negative two faces, the flip-chip front after overmold and side have colloid to protect, and backplate, for conducting electricity connection, can be directly used in SMT paster.Compared with traditional packaging technology, this technology well optimizes technological process, under the prerequisite that flip-chip is applied, eliminates conventional die bond, bonding wire flow process, eliminates the use of LED support or substrate and gold thread, greatly reduce packaging cost.Meanwhile, with traditional encapsulation Particle Phase ratio, this applies the particle that obtains and also can directly apply in SMT, and it is directly welded on substrate by tin cream, and thermal conductivity is better, dispel the heat sooner, more reliable.
[accompanying drawing explanation]
In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.Wherein:
Fig. 1 is the overmold technique flow chart in one embodiment of a kind of LED flip chip of the application;
Fig. 2 is the LED particle structural representation in one embodiment of the overmold technique of a kind of LED flip chip of the application.Wherein, 1 is LED chip, and 2 is packaging plastic, and 3 is electrode district.
[embodiment]
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, and below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Alleged herein " embodiment " or " embodiment " refers to special characteristic, structure or the characteristic that can be contained at least one implementation of the present invention.Different local in this manual " in one embodiment " occurred not all refers to same embodiment, neither be independent or optionally mutually exclusive with other embodiments embodiment.
Refer to Fig. 1, Fig. 1 is the overmold technique flow chart in one embodiment of a kind of LED flip chip of the application.As shown in Figure 1, described method 100 comprises the steps.
Step 110, provide multiple LED chip with first surface and second surface, described first surface has electrode district.
Concrete, multiple LED chip with first surface and second surface is provided, be described first surface by the surface definition with electrode district, the electrode district of the first surface of described LED chip has positive and negative electrode, described positive and negative electrode is symmetrical, and the spacing between described positive and negative electrode is more than or equal to 150um.The electrode district of the first surface of described LED chip is coated with metal level, and described metal level is made up of the conducting metal good with tin associativity, as gold, silver or copper etc., generally adopts gold, and its conductive effect is better.The thickness of described metal level is 5-10um.Compared with packed LED chip, larger than packed LED chip with size flip LED chips light-emitting area, can to bear electric current larger.
Step 120, upset LED chip make first surface down, second surface upward.
Concrete, adopt artificial or machine upset LED chip make first surface down, second surface upward.Such design be because the LED chip that provides of current more producer be first surface upward, second surface structure down, need to overturn, if the LED chip provided be second surface upward, first surface structure down, then can save this step.
Step 130, provides a high temperature resistance diaphragm, pastes described high temperature resistance diaphragm on the first surface.
Concrete, provide a high temperature resistance diaphragm, the heat resisting temperature of described high temperature resistance diaphragm is greater than 150 DEG C, as: UV film, pastes described high temperature resistance diaphragm on the first surface.
Step 140, encapsulates coated described LED chip from described second surface in press mold mode with packaging plastic, and form packaging body, the electrode of described first surface exposes to described colloid.
Concrete, refer to Fig. 2, Fig. 2 is the LED particle structural representation in one embodiment of the overmold technique of a kind of LED flip chip of the application.As shown in Figure 2, first surface is covered with high temperature resistance diaphragm (not shown), packaging plastic 2 encapsulates coated described LED chip 1 from described second surface in press mold mode, form packaging body, the electrode district 3 of described first surface exposes to described colloid, guarantees that two electrode districts 3, bottom are not covered by colloid.
Step 150, removes described high temperature resistance diaphragm.
Concrete, peel off described high temperature resistance diaphragm, described high temperature resistance diaphragm, as process transition, eliminates substrate or support.
Step 160, cutting packaging body, forms multiple LED particle independently with first surface and second surface.
Concrete, cutting packaging body, form multiple LED particle, each described LED particle comprises a described LED chip, and described LED particle can directly apply to the encapsulation of SMT paster, the hidden danger that can impact chip when simultaneously also eliminating secondary back and die bond.
Step 170, LED particle described in detection, sorting.
Concrete, testing electrical property etc. is carried out to described LED particle, substandard product is cancelled or process of doing over again, qualified products are used for the encapsulation of SMT paster.
What the those of ordinary skill in affiliated field should be understood that is, one of feature of the present invention or object are: this technology is by selecting high temperature resistance diaphragm, be placed on high temperature resistance diaphragm on by well-regulated for flip LED chips electrode down, by the mode of pressing mold, flip LED chips is directly encapsulated in colloid, guarantees that bottom two electrode zones are not covered by colloid simultaneously.This technology without the need to being fixed on LED chip on support or substrate as traditional handicraft, it belongs to a kind of without substrate package technology, adopt high temperature resistance diaphragm as process transition, cut after high temperature resistance diaphragm being peeled off after overmold completes, the LED particle that cutting like this obtains afterwards can directly apply to the encapsulation of SMT paster, the hidden danger that can impact chip when simultaneously also eliminating secondary back and die bond.
It is pointed out that the scope be familiar with person skilled in art and any change that the specific embodiment of the present invention is done all do not departed to claims of the present invention.Correspondingly, the scope of claim of the present invention is also not limited only to previous embodiment.
Claims (9)
1. an overmold technique for LED flip chip, is characterized in that: it comprises:
There is provided multiple LED chip with first surface and second surface, described first surface has electrode district;
Upset LED chip make first surface down, second surface upward;
One high temperature resistance diaphragm is provided, pastes described high temperature resistance diaphragm on the first surface;
Encapsulate coated described LED chip from described second surface in press mold mode with packaging plastic, form packaging body, the electrode of described first surface exposes to described colloid;
Remove described high temperature resistance diaphragm;
Cutting packaging body, forms multiple LED particle independently with first surface and second surface;
LED particle described in detection, sorting.
2. the overmold technique of LED flip chip according to claim 1, is characterized in that, the electrode district of the first surface of described LED chip has positive and negative electrode.
3. the overmold technique of LED flip chip according to claim 2, is characterized in that, described positive and negative electrode is symmetrical.
4. the overmold technique of LED flip chip according to claim 3, is characterized in that, the spacing between described positive and negative electrode is more than or equal to 150um.
5. the overmold technique of LED flip chip according to claim 1, is characterized in that, the electrode district of the first surface of described LED chip is coated with metal level, and described metal level is made up of conducting metal.
6. the overmold technique of LED flip chip according to claim 5, is characterized in that, the thickness of described metal level is 5-10um.
7. the overmold technique of LED flip chip according to claim 5, is characterized in that, described conducting metal comprise in gold, silver or copper any one.
8. the overmold technique of LED flip chip according to claim 1, is characterized in that, the heat resisting temperature of described high temperature resistance diaphragm is greater than 150 DEG C.
9. the overmold technique of LED flip chip according to claim 1, is characterized in that, described high temperature resistance diaphragm is UV film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410479621.2A CN105489741A (en) | 2014-09-18 | 2014-09-18 | Compression moulding packaging technology for LED flip-chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410479621.2A CN105489741A (en) | 2014-09-18 | 2014-09-18 | Compression moulding packaging technology for LED flip-chip |
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| CN105489741A true CN105489741A (en) | 2016-04-13 |
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| CN201410479621.2A Pending CN105489741A (en) | 2014-09-18 | 2014-09-18 | Compression moulding packaging technology for LED flip-chip |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957942A (en) * | 2016-06-30 | 2016-09-21 | 广州市鸿利光电股份有限公司 | LED production method |
| CN107665939A (en) * | 2016-07-27 | 2018-02-06 | 江西省晶瑞光电有限公司 | A kind of preparation method of White-light LED chip |
| CN112764264A (en) * | 2019-10-21 | 2021-05-07 | 三星电子株式会社 | Direct type backlight device and display apparatus having the same |
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| TW200952138A (en) * | 2008-06-12 | 2009-12-16 | Chipmos Technologies Inc | Chip rearrangement package structure and the method thereof |
| CN102709278A (en) * | 2012-05-21 | 2012-10-03 | 苏州晶品光电科技有限公司 | Plane thin sheet type LED (Light-Emitting Diode) array light source of fluorescent thin film |
| CN103050609A (en) * | 2012-07-17 | 2013-04-17 | 上海祥羚光电科技发展有限公司 | Preparation method of white chip for LED (Light Emitting Diode) |
| CN103545436A (en) * | 2013-09-29 | 2014-01-29 | 苏州东山精密制造股份有限公司 | LED (light emitting diode) packaging structure with sapphire substrate and packaging method for LED packaging structure |
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2014
- 2014-09-18 CN CN201410479621.2A patent/CN105489741A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200952138A (en) * | 2008-06-12 | 2009-12-16 | Chipmos Technologies Inc | Chip rearrangement package structure and the method thereof |
| CN102709278A (en) * | 2012-05-21 | 2012-10-03 | 苏州晶品光电科技有限公司 | Plane thin sheet type LED (Light-Emitting Diode) array light source of fluorescent thin film |
| CN103050609A (en) * | 2012-07-17 | 2013-04-17 | 上海祥羚光电科技发展有限公司 | Preparation method of white chip for LED (Light Emitting Diode) |
| CN103545436A (en) * | 2013-09-29 | 2014-01-29 | 苏州东山精密制造股份有限公司 | LED (light emitting diode) packaging structure with sapphire substrate and packaging method for LED packaging structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957942A (en) * | 2016-06-30 | 2016-09-21 | 广州市鸿利光电股份有限公司 | LED production method |
| CN107665939A (en) * | 2016-07-27 | 2018-02-06 | 江西省晶瑞光电有限公司 | A kind of preparation method of White-light LED chip |
| CN107665939B (en) * | 2016-07-27 | 2020-02-14 | 江西省晶能半导体有限公司 | Preparation method of white light LED chip |
| CN112764264A (en) * | 2019-10-21 | 2021-05-07 | 三星电子株式会社 | Direct type backlight device and display apparatus having the same |
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Application publication date: 20160413 |
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