CN104409615A - Flip LED chip and manufacturing method thereof, and flip LED chip packaging body and manufacturing method thereof - Google Patents
Flip LED chip and manufacturing method thereof, and flip LED chip packaging body and manufacturing method thereof Download PDFInfo
- Publication number
- CN104409615A CN104409615A CN201410595834.1A CN201410595834A CN104409615A CN 104409615 A CN104409615 A CN 104409615A CN 201410595834 A CN201410595834 A CN 201410595834A CN 104409615 A CN104409615 A CN 104409615A
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- led chips
- flip led
- electric conductor
- flip
- packaging body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
The invention discloses a flip LED chip and a manufacturing method thereof, and a flip LED chip packaging body and a manufacturing method thereof. The flip LED chip is composed of an LED epitaxial wafer, conductors, and a first packaging colloid; the conductors are arranged at the positive electrode and the negative electrode of the front side of the LED epitaxial wafer; the first packaging colloid covers the front side of the LED epitaxial wafer and the conductors; and the conductor upper surface of the positive electrode, the conductor upper surface of the negative electrode, and the upper surface of the first packaging colloid are located at the same horizontal plane. The flip LED chip is arranged at the upper surface of a substrate in an inverted mode; the electrode of the flip LED chip is connected with the electrode of the substrate correspondingly; and a second packaging colloid covers the flip LED chip and the substrate upper surface to form a packaging body. According to the invention, with the inverted method of the LED chip, the dimension of the packaging body is substantially reduced; the overall reliability of the packaging body is improved; the cost is lowered; and the thermal resistance of the device is reduced and heat radiation can be carried out fast.
Description
Technical field
The present invention relates to LED chip encapsulation field, more specifically, relate to a kind of flip LED chips, flip LED chips packaging body and preparation method thereof.
Background technology
Current LED industry is towards small size, and high energy efficiency future development, high density point is apart from future development, and the lamp pearl that traditional LED display uses generally adopts the Top SMD LED shown in Chip SMD LED and Fig. 2 shown in Fig. 1.Namely Chip SMD LED and Top SMD LED install at least one LED chip on substrate/support, LED chip is bonded in the settlement of substrate/support by crystal-bonding adhesive, then the both positive and negative polarity of chip and substrate/support is connected by gold thread, realizing circuit connects, finally use packaging plastic chip and gold thread parcel to be realized and air exclusion, prevent moisture.
There is following shortcoming in Chip SMD LED and Top SMD LED: because packaging body adopts gold thread to carry out circuit connection, and packaging body needs to reserve enough safe distances and safe altitude to protect gold thread, restriction LED body size and thickness; Chip and gold thread parcel realize and air exclusion by packaging plastic, prevent moisture, but packaging plastic is at expanded by heating with when meeting cold events, one can be had to pull power to the gold thread of parcel, gold thread fatigue fracture can be made, for this reason a failpoint being difficult to avoid completely of class wrapper after repeatedly pullling; The caloric requirement produced during LED work is through the substrate of LED chip, and crystal-bonding adhesive, support/substrate just can pass, and packaging body thermal resistance is larger.
Industry also proposes at a kind of LED chip flip scheme as shown in Figure 3, by flip-chip (Flip Chip) upside-down mounting on base plate for packaging, namely the program is inverted the packed LED chip shown in Fig. 4, its substrate is finally peelled off and chip material is transparent, therefore the light that luminescent layer inspires directly sends from the another side of electrode, this structure is used high-power chip is more, and due to chip size, to be limited in point less apart from display screen sector application.Flip-chip basic structure as shown in Figure 5, grow n type semiconductor layer on a transparent substrate, then on n type semiconductor layer, grow the first contact layer, the part beyond the first contact layer is made into active layer, on active layer, regeneration grows the second contact layer, then grows electrode on the contact layer; Because the first contact layer of chip is lower than the second contact layer, electrode be made to be made in a plane, need on the first contact layer, produce an electrode bed course; Electrode surface has multiple dimpling ball, and can directly be bonded on flip-chip substrate by ultrasonic thermocompression, dimpling ball used be metal or alloy material, such as gold, silver, aluminium or ashbury metal; For obtaining preferably splicing results, needing to increase electrode surface area, making flip-chip area want large many compared with formal dress.
Traditional LED chip flip scheme has following shortcoming: flip LED chips cost is high, and the relatively large LED chip that causes of upside-down mounting electrode is relatively large; Use the LED body of flip LED chips relatively large in current industry, cannot apply in LED small-sized package industry; Flip LED chips still also exists some difficult problems, wherein the most outstanding be chip active layer down, in the process of chip preparation, encapsulation, if PROCESS FOR TREATMENT is improper, then easily cause larger stress damage.
Summary of the invention
The present invention is intended to solve the problems of the technologies described above at least to a certain extent.
Primary and foremost purpose of the present invention is to provide a kind of flip LED chips.
A further object of the present invention is to provide a kind of flip LED chips packaging body.
3rd object of the present invention is to provide a kind of manufacture method of flip LED chips.
4th object of the present invention is to provide a kind of manufacture method of flip LED chips packaging body.
For solving the problems of the technologies described above, technical scheme of the present invention is as follows:
A kind of flip LED chips, comprise LED, electric conductor and the first packing colloid, on the positive electrode that described electric conductor is arranged on LED front and negative electrode, described first packing colloid covers LED front and electric conductor, and the upper surface of the electric conductor upper surface on described positive electrode, the electric conductor upper surface on negative electrode, the first packing colloid is in same level.
A kind of flip LED chips packaging body, comprise: above-mentioned flip LED chips, substrate and the second packing colloid, described flip LED chips is upside down in upper surface of base plate, and the electrode of flip LED chips should be connected with the electrode pair of substrate, and the second packing colloid covers flip LED chips and upper surface of base plate.
A manufacture method for flip LED chips, comprises the following steps:
S1: make electric conductor on the positive electrode and negative electrode in LED front;
S2: sealing is carried out to the LED front making electric conductor;
S3: carry out level grinding to the front of the LED of sealing, is ground to the electric conductor that epitaxial wafer makes and exposes, obtain flip LED chips, and the electric conductor upper surface wherein on positive electrode and the electric conductor upper surface on negative electrode are in same level.
A manufacture method for flip LED chips packaging body, comprises above-mentioned steps S1 ~ S3, also following steps:
S4: by the flip LED chips upside-down mounting that obtains on substrate, makes the positive electrode of flip LED chips and the electric conductor on negative electrode and is connected with the positive electrode of substrate and negative electrode respectively;
S5: sealing is carried out to flip LED chips and upper surface of base plate, obtains flip LED chips packaging body.
Compared with prior art, the beneficial effect of technical solution of the present invention is:
Flip LED chips of the present invention; electric conductor is arranged on LED front electrode; first packing colloid covers LED front and electric conductor; the upper surface of the electric conductor upper surface on positive electrode, the electric conductor upper surface on negative electrode, the first packing colloid is in same level; the electrode protection of flip LED chips gets up by the first packing colloid; when can effectively prevent from encapsulating, electrode is subject to stress damage; and adopt electric conductor as the bed course of electrode; make positive and negative electrode in the same horizontal line, convenient encapsulation.
Compared with traditional forward LED packaging body, flip LED chips packaging body of the present invention has the following advantages:
1, package dimension is reduced, the present embodiment flip LED chips is upside down in upper surface of base plate, the electrode of flip LED chips should be connected with the electrode pair of substrate, the connection of flip LED chips and electrode of substrate does not need to use gold thread, tradition packed LED chip packaging body use gold thread wire diameter generally at 0.7-1.5mil, the power of 5-15g can only be born, therefore traditional packed LED chip packaging body needs larger safe distance to come to protect gold thread not to be destroyed, this packaging body can reduce package body sizes greatly, makes package body sizes close to the size of chip own;
2, lightening encapsulation is realized; conventional packaging method uses the both positive and negative polarity of gold thread connection substrate; gold thread connects vertical direction and needs certain radian; packaging body needs a larger height not to be damaged to protect gold thread; this encapsulation can greatly reduce the height of packaging body; make package body sizes solve the size of chip and substrate, realize frivolous encapsulation.
3, reduce packaging body thermal resistance, after traditional forward LED packaging body is stained with crystal-bonding adhesive on substrate, LED chip is placed in above crystal-bonding adhesive, then use gold thread to connect chip electrode and support both positive and negative polarity, then use epoxy resin to encapsulate; The caloric requirement produced during LED work through the substrate of LED chip, crystal-bonding adhesive, substrate just can pass; This encapsulation adopts flip-chip method, and the heat that LED chip produces directly is passed by tin cream and substrate, do not need through substrate, and tin cream is lower than crystal-bonding adhesive thermal resistance, therefore the thermal resistance of packaging body is reduced.
4, reliability is improved, traditional forward LED packaging body adopts gold thread to carry out circuit connection, then epoxy resin is used to encapsulate, but epoxy resin can produce gold thread and pull power in the situation of expanding with heat and contract with cold, cause gold thread fatigue fracture, this packaging body adopts without gold thread encapsulation, therefore there is not this failure risk.
5, reduce costs, the upside-down mounting special chip complicated process of preparation that traditional flip-chip packaged adopts, expensive, and also packaging body of the present invention is without the need to gold thread, and cost advantage is obvious;
The manufacture method of flip LED chips of the present invention; the electrode protection of flip LED chips gets up by the first packing colloid, and when can effectively prevent from encapsulating, electrode is subject to stress damage, and adopts electric conductor as the bed course of electrode; make positive and negative electrode in the same horizontal line, convenient encapsulation.
The manufacture method of flip LED chips packaging body of the present invention, flip LED chips is upside down in upper surface of base plate, the electrode of flip LED chips should be connected with the electrode pair of substrate, the connection of flip LED chips and electrode of substrate does not need to use gold thread, therefore do not need setting safe distance and safe altitude to protect gold thread, avoid the risk causing gold thread fatigue fracture to cause component failure, greatly reduce size and the thickness of packaging body, improve the global reliability of packaging body, and reduce cost; And the heat produced during flip LED chips packaging body work of the present invention is directly passed by substrate, reduces the thermal resistance of packaging body, is convenient to heat radiation.
Accompanying drawing explanation
Fig. 1 is traditional Chip SMD LED.
Fig. 2 is traditional Top SMD LED.
Fig. 3 is traditional LED chip flip-chip packaged.
Fig. 4 is traditional packed LED chip.
Fig. 5 is traditional flip LED chips.
Fig. 6 is embodiment 1 flip LED chips structure chart.
Fig. 7 is embodiment 2 flip LED chips package body structure figure.
Fig. 8 is the manufacture method flow chart in kind of embodiment 3 flip LED chips.
Fig. 9 is the manufacture method flow chart in kind of embodiment 3 flip LED chips.
Figure 10 is the manufacture method flow chart in kind of embodiment 4 flip LED chips packaging body.
Figure 11 is the packaging body that embodiment 4 adopts the LED chip upside-down mounting of the cup type support of bowl.
1, flip LED chips; 2, LED; 3, electric conductor; 4 positive electrodes; 5, negative electrode, the 6, first packing colloid; 7, the sealing of LED body; 8, electrode of substrate.
Embodiment
Accompanying drawing, only for exemplary illustration, can not be interpreted as the restriction to this patent;
In order to better the present embodiment is described, some parts of accompanying drawing have omission, zoom in or out, and do not represent the size of actual product;
To those skilled in the art, in accompanying drawing, some known features and explanation thereof may be omitted is understandable.
Below in conjunction with drawings and Examples, technical scheme of the present invention is described further.
Embodiment 1
As shown in Figure 6, a kind of flip LED chips 1, comprise: LED 2, electric conductor 3 and the first packing colloid 6, on the positive electrode 4 that described electric conductor 3 is arranged on LED 2 front and negative electrode 5, described first packing colloid 6 covers LED 2 front and electric conductor 3, and the upper surface of the electric conductor upper surface on described positive electrode 3, the electric conductor upper surface on negative electrode 4, the first packing colloid 6 is in same level.
The present embodiment flip LED chips; electric conductor is arranged on LED front electrode; first packing colloid covers LED front and electric conductor; the upper surface of the electric conductor upper surface on positive electrode, the electric conductor upper surface on negative electrode, the first packing colloid is in same level; the electrode protection of flip LED chips gets up by the first packing colloid; when can effectively prevent from encapsulating, electrode is subject to stress damage; and adopt electric conductor as the bed course of electrode; make positive and negative electrode in the same horizontal line, convenient encapsulation.
In specific implementation process, described electric conductor is gold goal, and gold goal has stronger conductivity.
Embodiment 2
As shown in Figure 7, a kind of flip LED chips packaging body, comprise the flip LED chips 1 described in embodiment 1, substrate 7 and the second packing colloid 9, described flip LED chips 1 is upside down in substrate 7 upper surface, the electrode of flip LED chips 1 is corresponding with the electrode 8 of substrate to be connected, and the second packing colloid 9 covers flip LED chips 1 and substrate 7 upper surface.
Compared with traditional forward LED packaging body, the present embodiment flip LED chips packaging body has the following advantages:
1, package dimension is reduced, the present embodiment flip LED chips is upside down in upper surface of base plate, the electrode of flip LED chips should be connected with the electrode pair of substrate, the connection of flip LED chips and electrode of substrate does not need to use gold thread, tradition packed LED chip packaging body use gold thread wire diameter generally at 0.7-1.5mil, the power of 5-15g can only be born, therefore traditional packed LED chip packaging body needs larger safe distance to come to protect gold thread not to be destroyed, this packaging body can reduce package body sizes greatly, makes package body sizes close to the size of chip own;
2, lightening encapsulation is realized; conventional packaging method uses the both positive and negative polarity of gold thread connection substrate; gold thread connects vertical direction and needs certain radian; packaging body needs a larger height not to be damaged to protect gold thread; this encapsulation can greatly reduce the height of packaging body; make package body sizes solve the size of chip and substrate, realize frivolous encapsulation.
3, reduce packaging body thermal resistance, after traditional forward LED packaging body is stained with crystal-bonding adhesive on substrate, LED chip is placed in above crystal-bonding adhesive, then use gold thread to connect chip electrode and support both positive and negative polarity, then use epoxy resin to encapsulate; The caloric requirement produced during LED work through the substrate of LED chip, crystal-bonding adhesive, substrate just can pass; This encapsulation adopts flip-chip method, and the heat that LED chip produces directly is passed by tin cream and substrate, do not need through substrate, and tin cream is lower than crystal-bonding adhesive thermal resistance, therefore the thermal resistance of packaging body is reduced.
4, reliability is improved, traditional forward LED packaging body adopts gold thread to carry out circuit connection, then epoxy resin is used to encapsulate, but epoxy resin can produce gold thread and pull power in the situation of expanding with heat and contract with cold, cause gold thread fatigue fracture, this packaging body adopts without gold thread encapsulation, therefore there is not this failure risk.
5, reduce costs, the upside-down mounting special chip complicated process of preparation that traditional flip-chip packaged adopts, expensive, and also packaging body of the present invention is without the need to gold thread, and cost advantage is obvious;
In specific implementation process, described second packing colloid is set to lens shape, can not only protect IC by the impact of moisture, and the light-out effect of packaging body can be improved.
In specific implementation process, described substrate adopts the cup type support of bowl, and the reflector of the cup type support of bowl reflects light, make LED encapsulation piece to go out light consistency better.
Embodiment 3
As Figure 8-9, a kind of manufacture method of flip LED chips, for making the flip LED chips described in embodiment 1, comprises the following steps:
S1: make electric conductor on the positive electrode and negative electrode in LED front;
S2: sealing is carried out to the LED front making electric conductor;
S3: carry out level grinding to the front of the LED of sealing, is ground to the electric conductor that epitaxial wafer makes and exposes, obtain flip LED chips, and the electric conductor upper surface wherein on positive electrode and the electric conductor upper surface on negative electrode are in same level.
The manufacture method of the present embodiment flip LED chips; the electrode protection of flip LED chips gets up by the first packing colloid, and when can effectively prevent from encapsulating, electrode is subject to stress damage, and adopts electric conductor as the bed course of electrode; make positive and negative electrode in the same horizontal line, convenient encapsulation.
In specific implementation process, described electric conductor is gold goal, and gold goal has stronger conductivity.
In specific implementation process, described gold goal adopts ultrasonic thermocompression welding technology kind on LED electrode.
In specific implementation process, described sealing uses organic glue, preferably uses epoxy resin
Embodiment 4
As shown in Figure 10, a kind of manufacture method of flip LED chips packaging body, comprises the step S1 ~ S3 of above-described embodiment 3, also following steps:
S4: by the flip LED chips upside-down mounting that obtains on substrate, makes the positive electrode of flip LED chips and the gold goal on negative electrode and is connected with the positive electrode of substrate and negative electrode respectively;
S5: sealing is carried out to flip LED chips and upper surface of base plate, obtains flip LED chips packaging body.
The manufacture method of the present embodiment flip LED chips packaging body, flip LED chips is upside down in upper surface of base plate, the electrode of flip LED chips should be connected with the electrode pair of substrate, the connection of flip LED chips and electrode of substrate does not need to use gold thread, therefore do not need setting safe distance and safe altitude to protect gold thread, avoid the risk causing gold thread fatigue fracture to cause component failure, greatly reduce size and the thickness of packaging body, improve the global reliability of packaging body, and reduce cost; And the heat produced during flip LED chips packaging body work of the present invention is directly passed by substrate, reduces the thermal resistance of packaging body, is convenient to heat radiation.
In specific implementation process, in step S3, the LED after grinding is cut, is separated and sorting, obtains the flip LED chips of single.
In specific implementation process, for precisely contraposition and reduction upside-down mounting tin ball tin can be connected when guaranteeing upside-down mounting, in step s 4 which, first preliminary treatment is carried out to the front of base plate for packaging, namely first carry out a sealing in the front (one side of packaged chip) of substrate, after sealing completes, level grinding is being carried out to substrate front side, the pad being ground to substrate exposes completely, so just be equivalent to define one deck solder mask between substrate pads, can the more effective company's of preventing tin, dislocation etc. are bad.
In specific implementation process, by single flip LED chips upside-down mounting obtaining on uncut substrate, make the positive electrode of flip LED chips and the gold goal on negative electrode and be connected with the positive electrode of substrate and negative electrode respectively, concrete grammar is: brush tin cream make tin ball on the electrodes of the substrate, then by the electrode pair of the electrode of flip LED chips and substrate should and tip upside down on substrate; Or flip LED chips is tipped upside down on substrate, then by ultrasonic thermocompression solder technology, flip LED chips electrode is combined with electrode of substrate;
As shown in figure 11, in specific implementation process, described substrate adopts the cup type support of bowl, and the reflector of the cup type support of bowl reflects light, make LED encapsulation piece to go out light consistency better.
In specific implementation process, flip LED chips upside-down mounting on substrate after, sealing is carried out to substrate front side, and its packing colloid is made into lens shape, can not only protect IC by the impact of moisture, and the light-out effect of packaging body can be improved.
The corresponding same or analogous parts of same or analogous label;
The term describing position relationship in accompanying drawing, only for exemplary illustration, can not be interpreted as the restriction to this patent;
Obviously, the above embodiment of the present invention is only for example of the present invention is clearly described, and is not the restriction to embodiments of the present invention.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.All any amendments done within the spirit and principles in the present invention, equivalent to replace and improvement etc., within the protection range that all should be included in the claims in the present invention.
Claims (10)
1. a flip LED chips, it is characterized in that, comprise LED, electric conductor and the first packing colloid, on the positive electrode that described electric conductor is arranged on LED front and negative electrode, described first packing colloid covers LED front and electric conductor, and the upper surface of the electric conductor upper surface on described positive electrode, the electric conductor upper surface on negative electrode, the first packing colloid is in same level.
2. flip LED chips according to claim 1, is characterized in that, described electric conductor is gold goal.
3. a flip LED chips packaging body, it is characterized in that, comprise flip LED chips according to claim 1, substrate and the second packing colloid, described flip LED chips is upside down in upper surface of base plate, the electrode of flip LED chips should be connected with the electrode pair of substrate, and the second packing colloid covers flip LED chips and upper surface of base plate.
4. flip LED chips packaging body according to claim 3, is characterized in that, described upper surface of base plate is coated with the 3rd packing colloid, and the upper surface of described electrode of substrate, the upper surface of the 3rd packing colloid are in same level.
5. flip LED chips packaging body according to claim 2, is characterized in that, described second packing colloid is set to lens shape.
6. flip LED chips packaging body according to claim 2, is characterized in that, described substrate is the cup type support of bowl.
7. a manufacture method for flip LED chips described in claim 1, is characterized in that, comprises the following steps:
S1: make electric conductor on the positive electrode and negative electrode in LED front;
S2: sealing is carried out to the LED front making electric conductor;
S3: carry out level grinding to the front of the LED of sealing, is ground to the electric conductor that epitaxial wafer makes and exposes, obtain flip LED chips, and the electric conductor upper surface wherein on positive electrode and the electric conductor upper surface on negative electrode are in same level.
8. the manufacture method of flip LED chips according to claim 5, is characterized in that, in step S1, described LED is uncut LED.
9. the manufacture method of flip LED chips according to claim 5, is characterized in that, described electric conductor is gold goal.
10. a manufacture method for flip LED chips packaging body described in claim 2, comprises step S1 according to claim 4 ~ S3, it is characterized in that, also following steps:
S4: by the flip LED chips upside-down mounting that obtains on substrate, makes the positive electrode of flip LED chips and the electric conductor on negative electrode and is connected with the positive electrode of substrate and negative electrode respectively;
S5: sealing is carried out to flip LED chips and upper surface of base plate, obtains flip LED chips packaging body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410595834.1A CN104409615A (en) | 2014-10-30 | 2014-10-30 | Flip LED chip and manufacturing method thereof, and flip LED chip packaging body and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410595834.1A CN104409615A (en) | 2014-10-30 | 2014-10-30 | Flip LED chip and manufacturing method thereof, and flip LED chip packaging body and manufacturing method thereof |
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| CN104409615A true CN104409615A (en) | 2015-03-11 |
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| CN201410595834.1A Pending CN104409615A (en) | 2014-10-30 | 2014-10-30 | Flip LED chip and manufacturing method thereof, and flip LED chip packaging body and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784268A (en) * | 2016-11-25 | 2017-05-31 | 安徽巨合电子科技有限公司 | A kind of miniature three-primary color LED and its method for packing without substrate package |
| CN106960902A (en) * | 2017-03-24 | 2017-07-18 | 宁波升谱光电股份有限公司 | A kind of SMD flip LED light source and preparation method thereof and LED array |
| CN107195624A (en) * | 2017-05-10 | 2017-09-22 | 佛山市国星光电股份有限公司 | A kind of small spacing LED component and its method for packing and the display screen being produced from it |
| CN110071207A (en) * | 2019-04-01 | 2019-07-30 | 深圳市瑞丰光电子股份有限公司 | LED encapsulation method and LED |
| CN111182739A (en) * | 2020-01-16 | 2020-05-19 | 深圳市志金电子有限公司 | Circuit board preparation method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102194985A (en) * | 2010-03-04 | 2011-09-21 | 展晶科技(深圳)有限公司 | Wafer level package method |
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2014
- 2014-10-30 CN CN201410595834.1A patent/CN104409615A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102194985A (en) * | 2010-03-04 | 2011-09-21 | 展晶科技(深圳)有限公司 | Wafer level package method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784268A (en) * | 2016-11-25 | 2017-05-31 | 安徽巨合电子科技有限公司 | A kind of miniature three-primary color LED and its method for packing without substrate package |
| CN106960902A (en) * | 2017-03-24 | 2017-07-18 | 宁波升谱光电股份有限公司 | A kind of SMD flip LED light source and preparation method thereof and LED array |
| CN107195624A (en) * | 2017-05-10 | 2017-09-22 | 佛山市国星光电股份有限公司 | A kind of small spacing LED component and its method for packing and the display screen being produced from it |
| CN107195624B (en) * | 2017-05-10 | 2023-09-15 | 佛山市国星光电股份有限公司 | Small-spacing LED device, packaging method thereof and display screen manufactured by same |
| CN110071207A (en) * | 2019-04-01 | 2019-07-30 | 深圳市瑞丰光电子股份有限公司 | LED encapsulation method and LED |
| CN111182739A (en) * | 2020-01-16 | 2020-05-19 | 深圳市志金电子有限公司 | Circuit board preparation method |
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