CN104164591B - Corrosion resistant aluminum alloy closing line - Google Patents
Corrosion resistant aluminum alloy closing line Download PDFInfo
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- CN104164591B CN104164591B CN201410206059.6A CN201410206059A CN104164591B CN 104164591 B CN104164591 B CN 104164591B CN 201410206059 A CN201410206059 A CN 201410206059A CN 104164591 B CN104164591 B CN 104164591B
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- closing line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
Abstract
The present invention provides a kind of corrosion resistant aluminum alloy closing line, its object is to suppress the intercrystalline corrosion under high temperature/high humidity environment of the semiconductor element connection high-purity aluminum steel.The present invention is to contain rhodium (Rh) and/or the aluminium alloy closing line of palladium (Pd) of 10～200 weight ppm in the raffinal that purity is more than 99.99 mass %, these addition element are forced solid solution and form the dispersion phase of the intermetallic compound with aluminum in aluminum substrate, and the crystallization particle diameter of above-mentioned aluminum substrate is 10～100 μm.Rhodium (Rh) and palladium (Pd) make, by catalytic action, the atom shape hydrogen evolution H that aluminum surface produces2, stop its scattering and permeating in aluminum substrate such that it is able to suppression atom shape hydrogen bonding forms H2And the intercrystalline corrosion occurred.
Description
Technical field
The present invention relates to connect the electrode on the semiconductor element used under hot environment and external electrical
The aluminium alloy closing line of pole, particularly under the hot environment of aircraft, electric automobile or boats and ships etc.
In the closing line of the semiconductor element used, it is possible to suppression occurs because the moisture of use environment
Intercrystalline corrosion thus improve the closing line of its durability and reliability.
Background technology
For on silicon (Si) or the semiconductor element such as carborundum (SiC), gallium nitride (GaN)
Joint dish, the electrode being equipped with on the substrate of these semiconductor elements or lead frame, mainly
Use the former materials such as aluminum (Al), copper (Cu), nickel (Ni).
Although sometimes the electrode on these substrates to be imposed your gold such as gold (Au), silver (Ag)
Belong to plating or nickel plating (Ni) uses afterwards, but the most if no special instructions, they are referred to as " aluminum
Dish ".
Electrode by the aluminum dish of ultrasonic bonding these semiconductor elements of connection and lead frame etc.
Time, use the aluminium alloy that have employed the raffinal (Al) with more than 60% high conductivity thin
Line.
The circular fine rule that these aluminium alloy fine rules generally use line footpath to be 50～500 μm, but sometimes
The line footpath superfine wire less than 50 μm or the fine rule more than 500 μm is used also according to purposes, or
Use the rectangle fine rule (carrying) after being flattened by these fine rules.
This aluminum that have employed raffinal (Al) is used under hot and humid environment (atmosphere)
(Al) during alloy fine rule, especially as the semiconductor element for aircraft, automobile or boats and ships etc.
When the wiring material of part uses, exist and be difficult to maintain under these circumstances and guarantee durability and can
Problem by property.
As the example of this respect, less than resistance, mechanical strength is higher, thermostability simultaneously
The most excellent wiring material is listed in aluminum (Al) the solid solution aluminium alloy of nickel (Ni) under just having.
Japanese Laid-Open Patent Publication 59-56737 publication (patent documentation 1 described later) discloses one
In conjunction with aluminum (Al) fine rule, " it is characterized in that, in high-purity Al containing nickel (Ni),
One or both elements in copper (Cu), its content is 0.005～0.2 weight %, i.e. contains
The Ni or 0.005～the Cu of 0.2 weight % of 0.005～0.2 weight % or contain with total amount
Ni and Cu of 0.005～0.2 weight % ".
About the corruption in the raffinal of purity more than the 99.99% high temperature pure water more than 150 DEG C
Erosion mechanism, according to the chemical reaction of aluminum Yu water, should be considered as problem by following reaction.
2Al+3H2O=Al2O3+6H↑
" in the hydrogen that this reaction produces, form molecularity on aluminum surface and with H2Gas form discharges
Part the air pressure in container only can be made therefore to raise, but a part can be with the shape of atom shape hydrogen
Formula diffuses through aluminium oxide, and the grain boundary decision along aluminum invades, and is being internally formed H2Molecule, increases
Big pressure, thus cause grain-boundary crack in aluminum base.So, pellumina splits as well as this
Stricture of vagina and rupture, thus new water penetrates into, and the reaction of aluminum and water occurs in inside, again produces former
Sub-shape hydrogen, and then inwardly invade, the most repeatedly.Therefore, finally from intercrystalline fracture, collapse
The explanation solved is the most prevailing (light metal association compiles, " aluminum handbook ", non-patent literature 1 described later).”
For above-mentioned reaction mechanism, the aluminium alloy of nickel in the solid solution that aforementioned patent literature 1 is recorded
In, nickel plays a role on its top layer as catalyst, and order is prone to the former of in crystalline structure movement
Sub-shape hydrogen (H) forms H2, thus suppress atom shape hydrogen (H) to invade in the crystalline structure of aluminum,
Improve corrosion resistance.
Additionally, the effect of the nickel (Ni) etc. for adding in this raffinal, non-patent
Document 1 has been recorded " the clearest, add about 1%, produce the second phase NiAl3After, high
Corrosion resistance in warm water improves a lot of (page 1278 stage casing) ", patent documentation 1 is thought
" Ni, Cu are zygosity and the corrosion resistances that can improve Al, and (middle summary) is if surpassed
Cross 0.2 weight %, then there is Al line hardening, ultrasonic bonding method exists granule fragmentation
Disadvantage (page 2 the 2nd～7 row) ".
But, nickel (Ni) starts to be taken as the impact on environment to make at aspects such as health in recent years
The material of people's worry, and it is applied with use restriction according to purposes, it is contemplated that the scope of restriction will be from now on
Expand further.
On the other hand, need 100～200 DEG C thermostability quasiconductor, especially for sky
The power semiconductor of tune, solar power system, hybrid vehicle, electric automobile etc. is compeled
Be essential aluminium alloy fine rule to be used, and thinks that its range of application will be at expanding day from now on.This
The working condition of power semiconductor is higher than the temperature of general semiconductor element.Such as, vehicle-mounted
In the power semiconductor used in purposes, aluminium alloy fine rule generally up to needs to bear 100～150
DEG C junction surface temperature.In the device used under this hot environment, easily soften only by height
The fine aluminium fine rule that purity aluminum (Al) is constituted not yet realizes practical.
Therefore, in these areas, in the urgent need to developing the most nickeliferous (Ni) and than nickeliferous (Ni)
Aluminium alloy fine rule further increases the aluminium alloy fine rule of the corrosion resistance under high temperature, high humidity environment.
Patent documentation 1: Japanese Laid-Open Patent Publication 59-56737 publication
Non-patent literature 1: light metal association compile " aluminum handbook ", towards storehouse bookstore 2003,
P1278～1280 " (a) aluminum and the alloy corrosion resistance to water thereof "
Summary of the invention
The technical task of the present invention is, it is provided that a kind of aluminium alloy fine rule, its with only by high-purity
The pure aluminum alloy fine rule that aluminum (Al) is constituted is same because soft relative to semiconductor chip and
Wire rod will not produce die crack etc. when engaging, and plays under high temperature, high humidity environment with existing
The corrosion resistance that the aluminium alloy fine rule being added with nickel (Ni) having is above on an equal basis, will not occur crystalline substance
Between corrosion cracking.
The present invention is containing 10～200 matter in the raffinal that purity is more than 99.99 mass %
The rhodium (Rh) of amount ppm and/or the aluminium alloy closing line of palladium (Pd),
It is characterized in that, these addition element are forced solid solution and are formed in aluminum substrate and aluminum
The dispersion phase of intermetallic compound,
The crystallization particle diameter of above-mentioned aluminum substrate is 10～100 μm,
And, the purity of above-mentioned raffinal is more than 99.998 mass %,
The dispersion phase of the above-mentioned intermetallic compound with aluminum be after continuous wire drawing is processed through 200～
The heat treatment of 300 DEG C and formed,
Above-mentioned closing line is used for ultrasonic bonding,
The line footpath of above-mentioned closing line is 50～500 μm,
Above-mentioned closing line uses at 80 DEG C～300 DEG C or 150 DEG C～250 DEG C.
In the alloy of the present invention trace add rhodium (Rh) and palladium (Pd), in reality described later
Execute solid solution in aluminum substrate in the common wire rod manufacturing process shown in example, the crystalline substance in aluminum substrate
Boundary forms the dispersion phase of the intermetallic compound with aluminum as the second phase.
For the dispersion phase of this intermetallic compound with aluminum, by adding ormal weight
Rh, Pd and melted after the ingot casting of solidification at a temperature of its fusing point, carrying out heat treatment, thus
Solid solution is forced in alloy substrate, in the Tempering and Quenching carried out after continuous wire drawing is processed, with
The form of their intermetallic compound separates out at crystal boundary, and be consequently formed in alloy substrate is uniform
Dispersion phase (with reference to Fig. 3).
About the anticorrosion machine under the high humidity environment brought by the dispersion phase of this intermetallic compound
System, except making afore mentioned chemical anti-by its catalytic action on top layer as described in aforementioned prior art
Atom shape hydrogen (H) answering formula to produce is transformed into H2, thus stop from top layer internally matrix
Outside the effect invaded, it is also contemplated that the intermetallic compound being scattered in crystal boundary as the second phase is same
The atom shape hydrogen invaded via this crystal boundary is changed into H2, thus the most effectively stop to crystal boundary
Internal intrusion.
State as this intermetallic compound that the second crystal boundary in alloy matrix aluminum separates out
With reference to Fig. 3.
Additionally, without the etch state under the high humidity environment in the high-purity aluminum steel of these Rh, Pd
As in figure 2 it is shown, define crack from the pellumina of surface hypertrophy aluminum substrate internally,
Corrosion is carried out, but in the case of the embodiment of the invention, as it is shown in figure 1, define on surface
Under the state of thin and same alumina layer, alloy matrix aluminum below does not produces by corroding
The crack etc. caused.
Invention effect
The present invention is added with the corrosion-resistant of rhodium (Rh) and/or palladium (Pd) in alloy matrix aluminum
Property aluminium alloy closing line, it is possible to stop under high temperature, high humidity environment with reactive aluminum formed atom
The shape hydrogen (H) intrusion in alloy substrate, diffusion, thus prevent the intercrystalline corrosion in matrix.
Therefore, while the corrosion resistance under playing high temperature, high humidity environment, also by them
Alloy composition and suppress the hardness of wire rod, prevent die crack, and maintain with raffinal with
Deng electric conductivity.
Accompanying drawing explanation
Fig. 1 is that the aluminium alloy fine rule representing embodiments of the invention 3 is after corrosion resistance test
The figure in cross section.
Fig. 2 is the figure in the aluminium alloy fine rule representing comparative example 1 cross section after corrosion resistance test.
Fig. 3 is to represent that the crystal boundary in the aluminium alloy fine rule cross section of embodiments of the invention 8 separates out
The tem observation photo of intermetallic compound (arrow).
Detailed description of the invention
As examples and comparative examples of the present invention, by the aluminum alloy melts of composition shown in table 1,
The aluminium alloy cast ingot of diameter 300mm is made, after this ingot casting is implemented fluted roller calendering by continuous casting
Carry out Wire Drawing, make the aluminium alloy wires of diameter 5mm.
Then, to this wire rod continuous wire drawing in water, until reaching the line footpath of regulation, finally,
At 200 DEG C～300 DEG C, carry out 1 hour heat treatment to carry out quenched annealing, be consequently formed regulation
The closing line in line footpath.By the heat treatment of this quenched annealing, separate out as alloy substrate at crystal boundary
The rhodium (Rh) being forced solid solution of the second phase, the intermetallic compound of palladium (Pd) and aluminum,
Dispersion phase is formed in alloy matrix aluminum.
As conventional example, use the Al-50ppmNi alloy wire that the same manner is made.
Additionally, in above-mentioned wire-drawing process, intermediate heat-treatment can be carried out as required, examine
Suitably adjust on the basis of considering the formation condition of the character of wire rod, these intermetallic compounds
?.
Table 1
Embodiment 1
According to following condition, the closing line being identified through below the embodiment that above-mentioned operation is made exists
The character such as the corrosion resistance under high temperature, high humidity environment.
(ultrasonic bonding condition)
The line footpath of aluminium alloy fine rule is 0.05mm, 0.3mm, 0.5mm, a length of 8mm of bank,
Loop height is 1.3mm.
Use the Ultrasonic wave industrial company full-automatic jointing machine of REBO-7 type, implement aluminium alloy thin
On Al-1.0%Si film (thickness is 3 μm) on alignment Si chip (thickness is 0.2mm)
Ultrasonic bonding.
Engaging condition is, under the frequency of 130kHz, regulation load and Ultrasonic Conditions are so that the
1.3 times that fusing width is wire rod line footpath of one junction surface, and at identical conditions to all
It is ultrasonic bonding that 100 samples carry out including engaging for the first time and second time engages.As superhard
Instrument and joint guider, use and produced by Ultrasonic wave industrial company and meet described wire rod
The sintered carbide tools of size and joint guider.
(die crack viewing test)
For the sample after engaging, after dissolving Al-1.0Si dish with 20%NaOH solution, use
Optical microscope (Olympus Corp's measuring microscope, STM6), the multiplying power of 100 times
Lower observation is with or without die crack.Carry out observation at 100, if die crack one does not all have,
Then it is set to OK, if it find that the die crack more than at, is then set to NG.
(crystallization particle diameter is observed)
Cross section lapping device (high and new technology company of Hitachi system, pattern IM-4000) is used to make
Wire rod cross section, uses focused ion Shu Jiagong finder (NEC company system, pattern
JIB-4000) structure observation is carried out.Method of section is used to measure crystallization particle diameter.
(corrosion resistance test)
Use the Pingshan Mountain to make made unsaturation and surpass accelerated life test device (HASTEST
ModelIPAC-R8D), 121 DEG C, test under conditions of 100%RH (unsaturated)
Until 1000 hours.Corrosion layer thickness measurement uses cross section lapping device, and (Hitachi's new and high technology is public
Department's system, pattern IM-4000) make behind wire rod cross section, use FE-SEM (NEC company
System, pattern JSM-7800F) carry out the observation of corrosion layer.
The result of above-mentioned each test is as shown in table 1.
The nickel alloy wire of conventional example achieves satisfaction in terms of corrosion resistance and suppression die crack
Result.
The present invention is when containing any one in rhodium (Rh) and palladium (Pd), and content is 10～200
Time in the range of quality ppm, the corrosion resistance under high temperature, high humidity environment and suppression die crack
Aspect has reached the excellent results above on an equal basis with the nickel alloy wire as conventional example.
Additionally, add up to containing above-mentioned rhodium (Rh) and palladium (Pd) 10 mass ppm (No.5) or
Also same result is achieved during 200 mass ppm (No.6).
On the other hand, rhodium (Rh) and palladium (Pd) as comparative example are respectively less than 10 mass
During 5 mass ppm of ppm, although do not produce die crack, but corrosion layer thickness significantly increases,
During additionally, their content is 250 mass ppm more than 200 mass ppm, although corrosion resistant
Erosion property is good, but hardness is big, creates die crack.
Along with rhodium (Rh) and the increase of palladium (Pd) content, it is seen that crystallization particle diameter diminishes, machinery
Intensity and hardness become big trend, when its content exceedes the scope of the invention, produce with engaging
Die crack, its boundary is under crystallization particle diameter is together with these constituent contents less than the scope of the invention
Occur during limit value.
Fig. 1 and 2 is the line of the embodiment of the present invention after implementing corrosion resistance test and comparative example
Material cross-section photograph, Fig. 1 is the aluminium alloy wires cross section of the present invention of embodiment 3, the aluminum of light color
Dark grey thin layer on layer cross section is the alumina layer formed at wire surface, homogeneous and the thinnest
Alumina layer cover in aluminum alloy surface, there is not crack etc. in internal alloy substrate.
On the other hand, the comparative example 1 of Fig. 2 is to implement raffinal wire rod under similarity condition
Cross-section photograph after corrosion resistance test, it is known that form the same of inhomogenous thick corrosion layer on surface
Time, to alloy substrate, deeply form crack from this corrosion layer.
Industrial applicability
Due to the present invention aluminium alloy fine rule can at ultrasonic bonding middle suppression die crack,
Play corrosion resistance under high temperature, high humidity environment, and there is high conductivity, therefore, it can be suitable for
In the purposes widely such as aircraft, automobile or boats and ships, and its excellent zygosity is in such use
Universal expected, it is possible to contribute for industry.
Claims (8)
1. a high corrosion resistance aluminum alloy closing line, its for purity be 99.99 mass % with
On raffinal in containing 10 mass ppm less than the rhodium (Rh) of 100 mass ppm
Aluminium alloy closing line, it is characterised in that described rhodium (Rh) is formed with aluminum in aluminum substrate
The dispersion phase of intermetallic compound, the crystallization particle diameter of described aluminum substrate is 10～100 μm.
2. a high corrosion resistance aluminum alloy closing line, its for purity be 99.99 mass % with
On raffinal in add up to containing 10 mass ppm less than the rhodium of 100 mass ppm
(Rh) and the aluminium alloy closing line of palladium (Pd), it is characterised in that described rhodium (Rh) and palladium
(Pd) dispersion phase of the intermetallic compound of formation and aluminum in aluminum substrate, described aluminum substrate
Crystallization particle diameter is 10～100 μm.
High corrosion resistance aluminum alloy closing line the most according to claim 1 and 2, its feature
Being, the purity of described raffinal is more than 99.998 mass %.
High corrosion resistance aluminum alloy closing line the most according to claim 1 and 2, its feature
Being, described dispersion phase is the heat treatment formation after continuous wire drawing is processed through 200～300 DEG C.
High corrosion resistance aluminum alloy closing line the most according to claim 1 and 2, its feature
Being, described closing line is for ultrasonic bonding.
High corrosion resistance aluminum alloy closing line the most according to claim 1 and 2, its feature
Being, the line footpath of described closing line is 50～500 μm.
High corrosion resistance aluminum alloy closing line the most according to claim 1 and 2, its feature
Being, described closing line uses at 80～300 DEG C.
High corrosion resistance aluminum alloy closing line the most according to claim 7, it is characterised in that
Described closing line uses at 150～250 DEG C.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-103262 | 2013-05-15 | ||
| JP2013103262A JP5680138B2 (en) | 2013-05-15 | 2013-05-15 | Corrosion resistant aluminum alloy bonding wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104164591A CN104164591A (en) | 2014-11-26 |
| CN104164591B true CN104164591B (en) | 2017-01-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410206059.6A Expired - Fee Related CN104164591B (en) | 2013-05-15 | 2014-05-15 | Corrosion resistant aluminum alloy closing line |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5680138B2 (en) |
| KR (1) | KR101588522B1 (en) |
| CN (1) | CN104164591B (en) |
| SG (1) | SG10201402300TA (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101610519B1 (en) | 2014-10-07 | 2016-04-20 | 현대자동차주식회사 | A cooling system of hev-vehicle and a control method thereof |
| CN107739919A (en) * | 2017-11-02 | 2018-02-27 | 陈礼成 | A kind of high-strength aluminium-magnesium alloy and preparation method thereof |
| TW202235634A (en) | 2021-02-05 | 2022-09-16 | 日商日鐵新材料股份有限公司 | Al bonding wire for semiconductor devices |
| TW202239983A (en) * | 2021-02-05 | 2022-10-16 | 日商日鐵新材料股份有限公司 | Al wiring material |
| CN113584355A (en) * | 2021-08-03 | 2021-11-02 | 上杭县紫金佳博电子新材料科技有限公司 | Aluminum-based alloy bus for bonding and preparation method thereof |
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| JPS5928553A (en) * | 1982-08-11 | 1984-02-15 | Hitachi Ltd | Corrosion resistant aluminum electronic material |
| JPS5956737A (en) | 1982-09-25 | 1984-04-02 | Tanaka Denshi Kogyo Kk | Aluminum lead wire for bonding of semiconductor element |
| JPS60198851A (en) * | 1984-03-23 | 1985-10-08 | Hitachi Ltd | High corrosion resistant high hardness aluminum alloy wire for semiconductor |
| JPS6132444A (en) * | 1984-07-24 | 1986-02-15 | Hitachi Ltd | Ic device |
| JPH03148841A (en) * | 1990-10-19 | 1991-06-25 | Hitachi Ltd | Corrosion resistant aluminum electronic device |
| JP2525953B2 (en) * | 1990-11-20 | 1996-08-21 | 日立化成工業株式会社 | Semiconductor device |
| JPH0771562B2 (en) * | 1992-10-14 | 1995-08-02 | 鈴木金属工業株式会社 | Dental material |
| JP2873770B2 (en) * | 1993-03-19 | 1999-03-24 | 新日本製鐵株式会社 | Palladium fine wire for wire bonding of semiconductor devices |
| JP3542867B2 (en) * | 1996-04-04 | 2004-07-14 | 新日本製鐵株式会社 | Semiconductor device |
| JP2008311383A (en) * | 2007-06-14 | 2008-12-25 | Ibaraki Univ | Bonding wire, bonding method using the same, and semiconductor device as well as joint construction |
| WO2012011447A1 (en) * | 2010-07-20 | 2012-01-26 | 古河電気工業株式会社 | Aluminium alloy conductor and manufacturing method for same |
| JP4771562B1 (en) | 2011-02-10 | 2011-09-14 | 田中電子工業株式会社 | Ag-Au-Pd ternary alloy bonding wire |
-
2013
- 2013-05-15 JP JP2013103262A patent/JP5680138B2/en not_active Expired - Fee Related
-
2014
- 2014-05-12 KR KR1020140056589A patent/KR101588522B1/en active IP Right Grant
- 2014-05-14 SG SG10201402300TA patent/SG10201402300TA/en unknown
- 2014-05-15 CN CN201410206059.6A patent/CN104164591B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| SG10201402300TA (en) | 2014-12-30 |
| KR101588522B1 (en) | 2016-01-25 |
| JP2014224283A (en) | 2014-12-04 |
| JP5680138B2 (en) | 2015-03-04 |
| CN104164591A (en) | 2014-11-26 |
| KR20140135105A (en) | 2014-11-25 |
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