KR20140134593A - Bonding wire for high speed signal - Google Patents

Bonding wire for high speed signal Download PDF

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KR20140134593A
KR20140134593A KR1020130138234A KR20130138234A KR20140134593A KR 20140134593 A KR20140134593 A KR 20140134593A KR 1020130138234 A KR1020130138234 A KR 1020130138234A KR 20130138234 A KR20130138234 A KR 20130138234A KR 20140134593 A KR20140134593 A KR 20140134593A
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South Korea
Prior art keywords
bonding wire
mass
silver
layer
alloy
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KR1020130138234A
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Korean (ko)
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KR101568479B1 (en
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유키 안토쿠
가즈히코 야스하라
준 치바
웨이 첸
준이치 오카자키
나나코 마에다
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타나카 덴시 코오교오 카부시키가이샤
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Priority to JP2013102191A priority Critical patent/JP5399581B1/en
Priority to JPJP-P-2013-102191 priority
Application filed by 타나카 덴시 코오교오 카부시키가이샤 filed Critical 타나카 덴시 코오교오 카부시키가이샤
Publication of KR20140134593A publication Critical patent/KR20140134593A/en
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Publication of KR101568479B1 publication Critical patent/KR101568479B1/en

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Abstract

<Task>
Provides a bonding wire for high-speed signal lines of Ag-Pd-Au-based alloy capable of transmitting a very high frequency signal of several GHz band without a strong silver sulfide (Ag 2 S) film even when an unstable silver sulfide layer is formed on the surface of the bonding wire .
[Solution]
Wherein the bonding wire is made of a ternary alloy comprising 2.5 to 4.0 mass% of palladium (Pd), 1.5 to 2.5 mass% of gold (Au) and silver (Ag) of a purity of 99.99 mass% The surface layer consists of a concave surface and a surface segregated layer after the continuous casting. The surface segregation layer has a larger content of silver (Ag) and a smaller content of gold (Au) than the core material Alloy region of the second conductivity type.

Description

BONDING WIRE FOR HIGH SPEED SIGNAL [0002]

The present invention relates to a bonding wire for a high-speed signal line connecting a pad electrode of a semiconductor device and a lead electrode on a wiring board, and more particularly to a bonding wire for a high-speed signal line using a frequency of 1 to 15 GHz.

2. Description of the Related Art In recent years, with the development of semiconductor device manufacturing technology, semiconductor integrated circuit devices for high-speed signal lines using microwaves exceeding several GHz have been incorporated into mobile phones and the like. High-purity gold bonding wires having a purity of 99.99 mass% or more have conventionally been used for high-frequency transmission. However, when a semiconductor element for a high-speed / high-speed signal line using a very high frequency and a wiring electrode and the like are connected using a common bonding wire in several to several tens of GHz band, a very high frequency signal flows through the skin layer of the bonding wire, The resistance becomes larger. Therefore, the use of a high-purity gold bonding wire causes a decrease in the reception sensitivity and the transmission output.

For this reason, a wire of high purity silver (Ag) having an electrical resistivity of 1.6 mu OMEGA cm and a purity of 99.99% with respect to 2.4 mu OMEGA cm of high purity gold (Au) was studied. However, in the process of manufacturing the bonding wire after cleaning after dissolution / casting and then through continuous drawing, the (Ag) wire of high purity in bulk is too soft and not suitable for practical use. In addition, silver (Ag) is sulphided in the atmosphere and silver sulphide (Ag 2 S) film is formed on the skin layer of the bonding wire to make the molten ball hard, so that the ball bonding property by free air ball There is a drawback that it is damaged. Therefore, Ag-Pd alloy wire has been proposed in Japanese Patent Application Laid-Open No. 198-2-21830, but Japanese Patent Laid-Open Publication No. 2003-59963 As shown in Patent Document 1), a pure silver bonding wire with pure gold plating is merely practically used. The reason why the pure silver bonding wire is not put to practical use is that stable melting balls could not be formed before using the pure silver bonding wire as a high-speed signal line using a very high frequency. That is, when the molten ball is formed for use in ball bonding by the pre-air ball (FAB), since strong silver sulfide (Ag 2 S) formed on the wire surface makes the molten ball hard, And cracking.

On the other hand, for the purpose of utilizing the electrical resistivity of Ag which has high electrical conductivity, it is preferable to use Ag with an amount of 10000 to 55000 mass ppm (1 to 5.5 mass Au) and 1 to 100 mass ppm of Bi were added to the wire, and bonding of the Ag-Au-Pd ternary system alloy in which Pd was added in an amount of 20,000 mass ppm or less to the wire was developed. Wire has also been developed (Japanese Patent Laid-Open Publication No. 2012-49198 (Patent Document 2 to be described later)). The reason why the amount of Pd added is 20,000 mass ppm (2 mass%) or less is that when the amount of Pd added exceeds 20000 mass ppm, the hardness of the ball becomes high and pad damage occurs during ball bonding (see paragraph It is because.

Also, it is preferable that a total of 5 to 500 ppm by weight of at least two elements selected from Ca, Cu, Gd and Sm is contained, 0.5 to 5.0% by weight in total of at least one element selected from Pd and Au, (Japanese Unexamined Patent Application Publication No. 2012-151350 (Patent Document 3 to be described later)) which is characterized in that the wire is made of Ag and inevitable impurities. However, this bonding wire is a bonding wire (W) for connecting a Ni / Pd / Au coated electrode of a semiconductor element and a conductor wiring of a circuit wiring board by a ball bonding method, and an Al alloy (Al-Si-Cu ) The pad electrode is not bonded. Quot; Al &quot; and &quot; Ag &quot; are susceptible to corrosion (see Japanese Patent Laid-Open Publication No. 2012-151350 (Patent Document 3 to be described later).

In addition, "gold (Au)", "gold (Au)", "gold" (Au), and gold (Au) Nickel (Ni), and a chlorine (Cl) content of less than 1 mass ppm "(JP-A-2012-99577 (Patent Document 4) ). However, this bonding wire is effective for a white LED using blue light emission (refer to paragraph [0010]) since the reflectance of light having a wavelength of 380 to 560 nm is 95% or more, The purpose and effect are different from the wire bonding wire.

Japanese Patent Application Laid-Open No. 2003-59963 Japanese Patent Application Laid-Open No. 2012-49198 Japanese Patent Laid-Open Publication No. 2012-151350 Japanese Patent Application Laid-Open No. 1995-77577

The present invention segregates a high-concentration pure silver layer and a low-concentration gold alloy layer (hereinafter referred to as &quot; high-concentration pure silver layer &quot;) on the surface of a bonding wire of an Ag-Pd- The formation of the pure silver layer improves the bonding property by the pre-air ball (FAB). In addition, even if it is left in the air, it can prevent formation of silver sulfide and progress of the silver sulfide for a certain period of time, And an Ag-Pd-Au-based alloy bonding wire for a high-speed signal line.

One of the bonding wires for high-speed signal lines for solving the problems of the present invention is an Ag-Pd-Pb alloy containing a trace additive element for connecting a pad electrode of a semiconductor element and a lead electrode on a wiring board by means of a pre- Wherein the bonding wire is a ternary alloy comprising 2.5 to 4.0 mass% of palladium (Pd), 1.5 to 2.5 mass% of gold (Au), and silver (Ag) having a purity of 99.99 mass% , The surface of the bonding wire is made of a concave surface having a reduced diameter after continuous casting, the cross section of the bonding wire is composed of a surface segregation layer and a core material, Is a high-concentration pure silver layer composed of an alloy region where the content of silver (Ag) is increasing and the content of gold (Au) is decreasing.

In addition, one of the bonding wires for high-speed signal lines for solving the problems of the present invention is a wiring board for a high-speed signal line, in which Ag-Pb containing a trace additive element for connecting a pad electrode of a semiconductor element and a lead electrode on a wiring board by means of a pre- Wherein the bonding wire comprises 2.5 to 4.0 mass% of palladium (Pd), 1.5 to 2.5 mass% of gold (Au), and at least one of rhodium (Rh), iridium (Ir), ruthenium (Ru) Cu, Ni, Fe, Mg, Zn, Al, In, Si, Ge, Ber, At least one or more of trace elements such as bismuth (Bi), selenium (Se), cerium (Ce), yttrium (Y), lanthanum (La), calcium (Ca) or europium (Eu) 5 to 300 mass ppm, and the remainder being silver (Ag) having a purity of 99.99 mass% or more, wherein the surface of the bonding wire is a concave surface after the continuous casting, Made of a segregation phase and the core material, the surface of the segregation phase is, the core material than is the high density layer Silver increasing the content of (Ag) and formed of an alloy zone, which again diminishes the content of gold (Au).

One of the preferred embodiments of the Ag-Pd-Au-based alloy bonding wire for high-speed signal lines for solving the problems of the present invention is that the high-speed signal has a frequency of 1 to 15 GHz.

One of the preferred embodiments of the Ag-Pd-Au-based alloy bonding wire for high-speed signal lines for solving the problems of the present invention is that the pad electrode is made of aluminum (Al) metal having a purity of 99.9 mass% or more or 0.5 to 2.0 mass% (Si) or copper (Cu) and an aluminum (Al) alloy having a purity of 99.9 mass% or more.

One preferred embodiment of the Ag-Pd-Au-based alloy bonding wire for high-speed signal lines for solving the problems of the present invention is that the pad electrode is a surface layer of gold (Au), palladium (Pd) .

Further, the Ag-Pd-Au-based alloy bonding wire for high-speed signal lines for solving the problems of the present invention is characterized in that, similarly to the pure gold bonding wire, the cross-sectional reduction ratio is reduced by 99% or more by diamond dies, The mechanical properties of the bonding wire are then provided by a tempering heat treatment. Since this tempering treatment is low in temperature and the treatment time is short, the surface segregation layer of the high-concentration pure silver layer does not disappear.

(Added element)

In the present invention, the use of a silver (Ag) having a purity of 99.99% by mass or more in the balance causes a surface segregation layer of an alloy having a large amount of silver (Ag) to uniformly occur on the entire periphery of the wire. If the purity is low, there is a possibility that the thickness of the surface segregation layer of the alloy containing a large amount of silver (Ag) may be uneven due to the influence of the impurities.

In the case of a pure silver bonding wire, the sulfide is more stable than the oxide, so that the formation of this sulfide is reluctant. In the pure silver bonding wires so far, silver (Ag) on the surface at the surface of silver (Ag) in high purity becomes ions, and bonds with hydrogen sulfide in the atmosphere to form sulfides. This sulfide initially forms an unstable silver sulfide layer on the surface of the pure silver wire, but the silver sulfide layer moves into the inside of the silver bonding wire, and the silver sulfide layer grows to form a strong silver sulfide (Ag 2 S) As shown in FIG. In addition, the sulfur compound present in the skin layer is thought to be a strong silver sulfide (Ag 2 S) film spreading inside the bonding wire in a grain boundary system.

In the case of a bulk Ag-Pd-Au alloy in which palladium (Pd) and gold (Au) are alloyed with pure silver (Ag), formation of a silver sulfide layer in a high-concentration pure silver layer becomes weaker than a pure silver bonding wire. In the case of the Ag-Pd-Au based alloy of the present invention, the concentration of gold (Au) gradually increases from the surface layer to the inside of the core, and the content of palladium (Pd) and gold (Au) It is possible to delay in time the silver sulfide (Ag 2 S) film formed on the surface into the inside.

The reason why the content of palladium (Pd) in the bonding wire made of the Ag-Pd-Au based alloy is larger than the content of gold (Au) is that it constitutes a valuable Ag-Pd matrix for resistance to sulfidation, (Au) in the Pd matrix.

In the present invention, adding a predetermined amount of palladium (Pd) slows the progress of sulphide. In the case of using a bonding wire under a humid environment, since the surface of the bonding wire is likely to be sulphided, a wire made of an Ag-Pd-Au based alloy having resistance to sulfidization is required for the wire itself. When the palladium (Pd) content is 2.5% by mass, it is possible to delay the formation of a strong silver sulfide (Ag 2 S) film on the surface of the pure silver bonding wire. On the other hand, if palladium (Pd) exceeds 2.5 mass%, the silver concentration is lowered and the high-frequency characteristics are somewhat deteriorated, making it unsuitable as a very high frequency signal line. However, practically 4.0 mass% is not hindered because a high concentration pure silver layer is formed.

When the content of palladium (Pd) is 2.5% by mass or more, the hardness of the molten ball is increased when the pre-air ball (FAB) is formed, (Pd) content is in the range of 4.0 mass% or less by providing a high-concentration pure silver layer having a low melting point by increasing the content of gold (Au). However, Could be solved. Also, the concentration of palladium (Pd) is almost constant in the core layer as well as in the high-concentration pure silver layer.

In the present invention, the alloying element of gold (Au) has a specific gravity higher than that of silver (Ag) and palladium (Pd) and exerts a surface segregation effect on the Ag-Pd based alloy matrix. Since the surface-segregated high-concentration pure silver layer utilizes the surface phenomenon between the solid phase and the vapor phase of the lean alloy, the high-concentration pure silver layer can uniformly form a layer having a constant width over the entire circumference of the bonding wire. In the high concentration pure silver layer, when the center is viewed from the surface of the wire, the concentration of the silver (Ag) concentration decreases gradually (lower curve of FIG. 1) (Lower curve in Fig. 1). In the wire, there are two regions: a region of a high-concentration pure silver layer having a relatively high concentration of silver (Ag) and a region of a core material having a relatively low concentration. Therefore, even if an unstable silver sulfide layer is formed on the surface of the wire of high concentration, silver (Ag) is more precious alloying elements (palladium (Pd) and gold (Au)) are present and the bonding wire is used as a signal line , It is possible to delay the advance of the sulfur compound on the surface of the silver alloy and to delay the formation of a strong silver sulfide (Ag 2 S) film on the surface of the silver alloy.

Pd and Au are added to high-purity silver (Ag) by continuous casting, and silver (Ag) is added in the vicinity of the skin layer when high purity gold (Au) And a high-concentration pure silver layer of a low-concentration region of gold (Au) are formed in a donut phase. In the manufacturing process of the bonding wire, when the high-concentration layer is kept cold while being cold-drawn by cooling with water or the like, the high-concentration layer is reduced in size in proportion to the wire diameter of the fine wire. Therefore, this high-concentration pure silver layer can be used for high-frequency signals of several GHz or more.

When the continuous casting wire having a diameter of 8 mm is shrunk to a bonding wire of 20 m (with a sectional reduction rate of 99.9% or more), a high concentration layer of silver (Ag) (A curve on the upper side in Fig. 1) of silver (Ag) and a low-concentration region of gold (Au) on the lower side of Fig. 1 ) Were observed.

In general, a high frequency signal of several GHz flows through the surface layer of about 1 mu m and flows near the surface beyond the surface when the frequency becomes high. Therefore, if a high concentration silver (Ag) layer exists in the surface layer, The signal amount is increased and the signal waveform can be stabilized as compared with the wire.

When the range of the palladium (Pd) is 2.5 to 4.0 mass%, the range of the gold (Au) is 1.5 to 2.5 mass%, so that the bonding balls of the FAB do not cause cracking of the chip and stable bonding characteristics can be obtained.

(Trace added element)

The Ag-Pd-Au-based alloy of the present invention can be formed of a metal such as rhodium Rh, ruthenium Ru, iridium, copper, nickel Ni, iron Fe, magnesium Mg, Bi, Se, Ce, Al, Mn, In, Si, Ge, Sn, Ber, At least one of titanium (Ti), yttrium (Y), calcium (Ca), lanthanum (La), europium (Eu) or antimony (Sb) may be added in a total amount of 5 to 300 mass ppm. Although these minute additive elements do not change the surface segregation layer of the Ag-Pd-Au based alloy, since Ag-Pd-Au based alloy bonding wires free from a high concentration pure silver layer have an effect on bonding characteristics, Pd-Au-based alloy bonding wires. Specifically, it has an effect on bonding properties, particularly long-term stability, of a pad electrode made of a molten ball and an aluminum (Al) metal or an aluminum (Al) alloy. In addition, it is also possible to use a metal such as Rh, Ru, Ir, Cu, Ni, Fe, Mg, Zn, A metal such as aluminum, manganese, indium, silicon, germanium, tin, beryllium, bismuth, selenium, cerium, When the elements of titanium (Ti), yttrium (Y), calcium (Ca), lanthanum (La), europium (Eu) or antimony (Sb) are added within a predetermined range, Increases lupus. However, when the total amount of these elements is less than 5 mass ppm, there is no addition effect, and when it exceeds 300 mass ppm, the crystal balls of the molten ball at the time of forming FAB become too hard and chip breakage occurs. Therefore, it is preferable to use at least one selected from the group consisting of rhodium (Rh), ruthenium (Ru), iridium (Ir), copper (Cu), nickel (Ni), iron (Fe), magnesium (Mg), zinc (Zn) ), Indium (In), silicon (Si), germanium (Ge), tin (Sn), beryllium (Be), bismuth (Bi), selenium (Se), cerium (Ce) ), Calcium (Ca), lanthanum (La), europium (Eu) or antimony (Sb) in a total amount of 5 to 300 mass ppm. In the case of ordinary bonding wires, these minute additive elements are often used in a total amount of 100 mass ppm or less, so that these trace additive elements are preferably 5 to 100 mass ppm.

The pad electrode is preferably an electrode pad composed of a surface layer of gold (Au), palladium (Pd), gold (Au), or platinum (Pt). The bonding wires of the Ag-Pd-Au ternary alloy and the Ag-Pd-Au ternary alloy of the present invention have a high-concentration pure silver layer with a low melting point, and the bonding strength between these electrode pads and the FAB is good.

The Ag-Pd-Au ternary alloy wire of the present invention and the Ag-Pd-Au ternary alloy bonding wire of the Ag-Pd-Au ternary alloy alloy firmly form a high-concentration pure silver layer of high concentration of Ag suitable for high- And since the high-concentration pure silver layer and the low-concentration gold (Au) layer are added to the core material of the Ag-Pd-Au ternary alloy and the Ag-Pd-Au ternary alloy, bonding properties to the pad are better than those of the conventional bonding wires , And can form a stable signal layer of a rich silver alloy suitable for transmission of a high frequency signal of several to several tens of GHz.

Further, since the Ag-Pd-Au-based alloy bonding wire of the present invention is thin in thickness of the high-concentration pure silver layer, the bulk of the wire itself has mechanical strength and has excellent loop characteristics as in the conventional bonding wires.

In addition, the bonding characteristics such as the FAB characteristics have a further effect of excelling in the bonding property and the second bonding property between the molten ball and the pad electrode and the bonding wire without the high-concentration pure silver layer because the high-concentration pure silver layer having a low melting point exists in the surface layer. Particularly, when the surface layer of the pad electrode is an electrode pad made of gold (Au), palladium (Pd), gold (Au), or platinum (Pt), the bonding strength is stable.

The Ag-Pd-Au based alloy bonding wire according to the present invention is characterized in that the addition amount of palladium (Pd) is 4.0 mass% or less and the amount of gold (Au) is 2.5 mass% or less, which affects the mechanical strength of the bonding wire. The crystal grains of the molten ball when the FAB is formed by the surface segregation layer of the melting point do not become too hard. The Ag-Pd-Au based alloy bonding wire of the present invention is preferably made of an aluminum (Al) metal having a purity of 99.9 mass% or more, silicon (Si) or copper (Cu) of 0.5 to 2.0 mass% Even if a soft aluminum pad made of Al alloy is used, cracking of the chip and peeling of the pad do not occur due to the surface segregation layer having a low melting point. As a result, even if left in a room temperature atmosphere for a certain period of time, migration does not occur at the junction interface, and high-frequency signals can be stably transmitted.

FIG. 1 is a schematic cross-sectional view showing the distribution of the high-concentration pure silver layer of the present invention, in which the upper curve represents the silver (Ag) concentration and the lower curve represents the gold (Au) concentration.
Fig. 2 is a graph showing the voltage change accompanying the time of the product 1 and the comparative product 22 as a graph (L-shaped curve and stepped curve).
Fig. 3 shows the result of qualitative analysis of the vicinity of the outermost surface of the product 1.

<Examples>

Purity of the Ag-Pd-Au ternary alloy and the Ag-Pd-Au ternary alloy (both palladium (Pd) and gold (Au) having a composition shown in Table 1 was 99.99% by mass or more, (Cu), nickel (Ni), iron (Fe), magnesium (Mg), zinc (Zn), or the like as a trace additive element with a purity of 99.999 mass% (Al), Mn (Mn), In, Si, Ge, Sn, Ber, Bismuth, Se, The total amount of Ce, Ti, Y, Ca, La, Eu, and Sb is 5 to 300 ppm. Then, the continuous casting was carried out continuously by means of a diamond dice to a final wire diameter of 20 μm in a continuous manner in a continuous cold state having a section reduction rate of 99.99% or more Freshness And, to prepare a 1-21 to the desired temper heat treatment (hereinafter referred to as "exemplary width") the bonding wire according to the present invention having the wire diameter of the 20㎛.

Examples 1 to 9 are the products according to claim 1, and examples 10 to 21 are the products according to claim 2.

Figure pat00001

<Comparative Example>

Bonding wires 22 to 25 (hereinafter, referred to as &quot; comparative products &quot;) of comparative products having the compositional compositions shown in Table 1 which did not fall within the composition range of the present invention were prepared.

In the comparative product 25, a wire having a thickness of 8 mm? Obtained by continuous casting and a thin line pickled with a dilute acid at 80 占 폚 was continuously drawn (diameter-reduced) to form a bonding wire having no surface segregation layer on the surface layer It is. Therefore, the comparative product 25 has a composition range that is within the range of the present invention, but differs from the product in that it is pickled.

The tempering heat treatment in the present invention and the comparative example is carried out in the same manner as in the case of the gold wire so as to adjust the temperature and the speed in the tubular furnace so that the elongation becomes a predetermined value measured by a tensile rupture tester In this tempering heat treatment, there was no loss of the highly concentrated pure silver layer on the donut-shaped surface that was segregated on the surface of the product.

 [Identification of high-concentration pure silver layer]

An Ag-Pd-Au based alloy having the composition of the product of Example 1 was continuously cast in an inert atmosphere in a thick line of 8 mm in diameter. This bold line was continuously drawn by water cooling and subjected to a tempering treatment so as to have an elongation of 4% to obtain a bonding wire having a diameter of 20 탆. For this silver and gold (Au) element of the bonding wire, the ocher analysis was performed in the depth direction from the surface layer to the center direction. The result was as shown in the schematic diagram on the upper side of Fig. 1 and the curve on the lower side.

As shown in the schematic diagram of Fig. 1, the embodiment exhibits a high-concentration silver (Ag) gradient layer from about 10 nm to about 10 nm from the surface, and in contrast, there exists an increasingly low-concentration increment layer of gold (Au) alloying elements. The concentration of palladium (Pd) is not shown but is almost constant in the core material as well as in the high-concentration pure silver layer.

[Confirmation of silver sulphate]

The bonding wire of the product 1 was allowed to stand in the atmosphere at room temperature for 30 days and the thickness of the silver sulfide (Ag 2 S) film on the outermost surface was measured by a continuous film electrochemical reduction method using a sulfide film thickness meter (QC-200 manufactured by Sumitronics) Were measured. As a result, silver sulfide (Ag 2 S) film was not detected. This is indicated by the solid line (L-shaped curve) in Fig.

The bonding wire of the comparative article 22 was left in the atmosphere at room temperature for 30 days in the same manner as in the product 1, and the film thickness of silver sulfide (Ag 2 S) was measured. As a result, silver sulfide (Ag 2 S) film was detected. This is represented by the rust line (step-like curve) in Fig.

In detail, FIG. 2 is a graph of the voltage change with time. In the case of the comparative product 22 in which silver sulfide (Ag 2 S) is formed, even when the time varies in a section where the voltage is in the range of -0.25 to -0.80 V, silver sulfide (Ag 2 S) film, the voltage does not change. On the other hand, in the bonding wire of Practical Example 1, the above-mentioned stepwise phenomenon was not observed in the above-mentioned voltage range, and the voltage was changed with the lapse of time as indicated by the solid line (L-shaped phase curve) . It can be seen that the outermost surface of the bonding wire of Practical Example 1 does not form a silver sulfide (Ag 2 S) film.

Further, when the outermost surface of the product 1 was subjected to qualitative analysis by a scanning type Ogen analyzer (MICROLAB-310D manufactured by VG Co.), sulfur (S) was detected. The result of this qualitative analysis is shown in Fig.

As shown in Fig. 3, it can be seen that sulfur (S) is present on the outermost surface of the bonding wire of the product (1). However, since the silver sulfide (Ag 2 S) film was not detected from the results of FIG. 2, the sulfur S of the bonding wire of the product 1 reacted with the silver (Ag) present on the outermost surface, Ag 2 S) film is not formed, it can be seen that unstable silver sulfide that is physically adsorbed is in a bonding state. 3, palladium (Pd) and gold (Au) other than silver (Ag) were not detected in the metal element on the outermost surface of the bonding wire of Practical Example 1, and substantially silver (Ag ) Layer, it is understood that the structure is optimal as a high-speed signal layer.

[Aluminum splash test]

These products 1 to 21 and the comparative products 22 to 25 were set in a general-purpose wire bonder and Al-1.0 mass% Si-0.5 (abbreviated as &quot; TEG &quot; Air ball (FAB) with a target of 38 mu m under a spray nitrogen atmosphere was formed on a 70 mu m x 70 mu m aluminum pad (a 20 nm thick gold (Au) layer was deposited on the surface) Ball bonding was performed under the conditions of a heating temperature of 200 占 폚, a loop length of 5 mm, a loop height of 220 占 퐉, a compression ball diameter of 50 占 퐉, and a compression ball height of 10 占 퐉. The aluminum splash amount was measured by observing the compression balls of each wire directly from above using a general-purpose scanning electron microscope (SEM), measuring the position of the most bulged aluminum from the compression ball with the outer peripheral portion of the compression ball as a starting point Respectively. A case where the amount of aluminum exposed was less than 2 mu m was evaluated as &amp; cir &amp;, a case of 2 mu m or more and less than 4 mu m was evaluated as DELTA, and a case of 4 mu m or more was evaluated as x. The evaluation results are shown in Table 2 for this aluminum splash test.

Figure pat00002

[Chip Damage Test]

In addition, we observed chip damage to this sample. The chip damage test is a result of observing the chip with a stereoscopic microscope after dissolving the above-mentioned aluminum pad with an aqueous solution of sodium hydroxide. &Quot; Chip damage test &quot; in Table 2 indicates &quot; x &quot; when scratches or cracks are contained even slightly, and &quot;

[Degradation test of signal waveform]

Next, the deterioration test of the signal waveform was carried out by the four-terminal method. As a sample, wire of the product of the comparative product and the wire of the comparative product (each having a wire diameter of 20 μm and a length of 100 mm) were used. A 10 GHz, 2 V pulse waveform was propagated to the product wire and the comparative product wire using a universal function generator, and the signal waveform was measured using a predetermined general-purpose digital oscilloscope and probe capable of measuring pulse waveforms in the 10 GHz band. Were measured. The measurement probe spacing was 50 mm. The degree of deterioration of the signal waveform was measured as the delay time until the waveform of the output signal propagating on the wire reached the input voltage value. From the experimental results, it was confirmed that the signal delay time of the conventional pure gold wire (Ca 15 ppm, Eu 20 ppm and the rest 99.999 mass% Au) was 20%. Therefore, the determination of the signal delay time is made when the delay time is less than 20%, compared with the conventional wire, and when the delay time is longer than 20%, the signal delay time is judged as x. The deterioration test of this signal waveform is shown in Table 2 with the evaluation results of the wire for the product and the comparative product.

[Shear Strength Test of Compression Ball]

Using a member and an evaluating device similar to those of the aluminum splash test, a dedicated IC chip was bonded to a dedicated IC chip by a wire bonder, and 100 points of the product wire and the comparative article were bonded with a product name &quot; BT (Model 4000) &quot; was used to evaluate the shear strength of the pressed balls at the time of ball bonding. Table 2 shows the shear evaluation results of the compression balls.

Table 2 "ball shear" denotes values shear load in the first bond from, ○ is 12kg / mm 2 or more, △ is 10kg / mm 2, more than 12kg / mm 2 or less, and × is 10kg / mm 2 is less than or see Indicates the occurrence of peeling.

As apparent from the results of Table 2, it can be seen that all of the comparative products 22 to 25 are inferior to the deterioration test of the signal waveform, while the degradation tests of the products 1 to 21 of the present invention are not observed.

As for the aluminum splash test, the chip damage test and the shear strength test of the press-contact ball, the products 1 to 21 of the present invention are all good, whereas the comparative article 22 is inferior to the shear strength test of the press- And 24 show that the aluminum splash test and the chip damage test are inferior.

The bonding wire of the present invention is a bonding wire best suited for transmission of a very high frequency signal of several to several tens of GHz and is widely used for signal bonding wires suitable for transmission of a high frequency signal.

Claims (6)

  1. An Ag-Pd-Au based alloy bonding wire for connecting a pad electrode of a semiconductor element and a lead electrode on a wiring board by means of a pre-air ball (FAB), wherein the bonding wire comprises 2.5 to 4.0 mass% of palladium (Pd) (Au) in an amount of 1.5 to 2.5 mass% and the balance of silver (Ag) in a purity of 99.99 mass% or more. The surface of the bonding wire has a concave surface, The cross section of the bonding wire is composed of a surface segregation layer and a core material. The surface segregation layer is an alloy region in which the content of silver (Ag) is gradually decreased from the outermost surface toward the core material and the content of gold Wherein said bonding wire is a wire for a high-speed signal line.
  2. An Ag-Pd-Au based alloy bonding wire containing a trace amount of additive element for connecting a pad electrode of a semiconductor element and a lead electrode on a wiring board by a pre-air ball (FAB), wherein the bonding wire is palladium (Pd) (Ni), iron (Fe), magnesium (Mg), copper (Cu), and copper (Cu) in an amount of 0.5 to 4.0 mass%, gold (Au) in an amount of 1.5 to 2.5 mass%, and at least one element selected from the group consisting of rhodium, iridium, ruthenium, ), Zinc (Zn), aluminum (Al), indium (In), silicon (Si), germanium (Ge), beryllium (Be), bismuth (Bi), selenium (Se), cerium (Ag) containing at least one of lanthanum (La), calcium (Ca) and europium (Eu), the total amount of added trace elements being 5 to 300 mass ppm and the remainder being 99.99 mass% Wherein the surface of the bonding wire is composed of a concave surface after the continuous casting and the cross section of the bonding wire is composed of a surface segregation layer and a core material, Wherein an alloy region in which the content of silver (Ag) is decreased from the surface toward the core material and the content of gold (Au) is gradually increasing.
  3. 3. The method according to claim 1 or 2,
    Wherein the silver (Ag) of the bonding wire has a purity of 99.999 mass% or more.
  4. 3. The method according to claim 1 or 2,
    Wherein the high-speed signal has a frequency of 1 to 15 GHz.
  5. 3. The method according to claim 1 or 2,
    Wherein the pad electrode is made of an aluminum (Al) metal having a purity of 99.9 mass% or more, a silicon (Si) or copper (Cu) having a purity of 0.5 to 2.0 mass%, and an aluminum (Al) alloy having a purity of 99.9 mass% Bonding wire.
  6. 3. The method according to claim 1 or 2,
    Wherein the pad electrode is an electrode pad composed of a surface layer of gold (Au), palladium (Pd), or platinum (Pt).
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JP5165810B1 (en) * 2012-09-12 2013-03-21 田中電子工業株式会社 Silver gold palladium alloy bump wire

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TW201444005A (en) 2014-11-16
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JP2014222725A (en) 2014-11-27
KR101568479B1 (en) 2015-11-11
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TWI508204B (en) 2015-11-11
JP5399581B1 (en) 2014-01-29

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