MY155461A - Gold-platinum-palladium alloy bonding wire - Google Patents
Gold-platinum-palladium alloy bonding wireInfo
- Publication number
- MY155461A MY155461A MYPI2013002268A MYPI2013002268A MY155461A MY 155461 A MY155461 A MY 155461A MY PI2013002268 A MYPI2013002268 A MY PI2013002268A MY PI2013002268 A MYPI2013002268 A MY PI2013002268A MY 155461 A MY155461 A MY 155461A
- Authority
- MY
- Malaysia
- Prior art keywords
- platinum
- gold
- mass
- bonding wire
- palladium alloy
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48624—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
Abstract
[OBJECTS] A GOLD-PLATINUM-PALLADIUM ALLOY BONDING WIRE IS PROPOSED FOR USE WITH SEMICONDUCTOR DEVICES FOR AUTOMOTIVE VEHICLES, WHICH EXHIBITS EXCELLENT CONNECTION PERFORMANCE RELIABILITY WHEN CONNECTED TO AN ALUMINUM PAD SUCH THAT EVEN IN A CASE WHEREIN AN EPOXY RESIN FREE OF HALOGEN ELEMENTS IS USED, THE DURABILITY THROUGHOUT HIGH TEMPERATURE EXPOSURE AND THE CAPABILITY OF PRESERVING ELECTRIC PROPERTIES DESPITE HIGH TEMPERATURE EXPOSURE ARE EXCELLENT. [MEANS FOR SOLUTION] A GOLD-PLATINUM-PALLADIUM ALLOY BONDING WIRE COMPOSED OF PLATINUM BY 0.4 - 1.2 MASS %, PALLADIUM BY 0.01 - 0.5 MASS %, ALUMINUM BY 10 - 30 MASS PPM, AT LEAST ONE OF CALCIUM AND MAGNESIUM BY 10 - 60 MASS PPM IN SUM, AND A BALANCE, WHICH IS GOLD OF A PURITY OF 99.999 MASS % OR GREATER. NO
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011264547A JP5080682B1 (en) | 2011-12-02 | 2011-12-02 | Gold-platinum-palladium alloy bonding wire |
Publications (1)
Publication Number | Publication Date |
---|---|
MY155461A true MY155461A (en) | 2015-10-15 |
Family
ID=47435522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2013002268A MY155461A (en) | 2011-12-02 | 2012-11-21 | Gold-platinum-palladium alloy bonding wire |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP5080682B1 (en) |
CN (1) | CN103238210B (en) |
MY (1) | MY155461A (en) |
SG (1) | SG188385A1 (en) |
TW (1) | TWI415957B (en) |
WO (1) | WO2013080851A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6047214B1 (en) * | 2015-11-02 | 2016-12-21 | 田中電子工業株式会社 | Precious metal coated copper wire for ball bonding |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2641000B2 (en) * | 1991-12-26 | 1997-08-13 | 新日本製鐵株式会社 | Gold alloy fine wire for bonding |
JP3650461B2 (en) * | 1996-04-04 | 2005-05-18 | 新日本製鐵株式会社 | Gold alloy fine wire for semiconductor devices |
JP3542867B2 (en) * | 1996-04-04 | 2004-07-14 | 新日本製鐵株式会社 | Semiconductor device |
JP3126926B2 (en) * | 1996-09-09 | 2001-01-22 | 新日本製鐵株式会社 | Gold alloy fine wire for semiconductor element and semiconductor device |
JP3969671B2 (en) * | 2004-09-30 | 2007-09-05 | 田中電子工業株式会社 | Au alloy bonding wire |
JP4596467B2 (en) * | 2005-06-14 | 2010-12-08 | 田中電子工業株式会社 | Gold alloy wire for bonding wire with high bonding reliability, high roundness of crimped ball, high straightness and high resin flow resistance |
JP4130843B1 (en) * | 2007-04-17 | 2008-08-06 | 田中電子工業株式会社 | High reliability gold alloy bonding wire and semiconductor device |
JP2011155129A (en) * | 2010-01-27 | 2011-08-11 | Tanaka Electronics Ind Co Ltd | Gold alloy bonding wire for high temperature semiconductor device |
-
2011
- 2011-12-02 JP JP2011264547A patent/JP5080682B1/en active Active
-
2012
- 2012-11-21 CN CN201280003142.2A patent/CN103238210B/en active Active
- 2012-11-21 SG SG2013015953A patent/SG188385A1/en unknown
- 2012-11-21 WO PCT/JP2012/080152 patent/WO2013080851A1/en active Application Filing
- 2012-11-21 MY MYPI2013002268A patent/MY155461A/en unknown
- 2012-11-29 TW TW101144795A patent/TWI415957B/en active
Also Published As
Publication number | Publication date |
---|---|
CN103238210A (en) | 2013-08-07 |
TW201331390A (en) | 2013-08-01 |
WO2013080851A1 (en) | 2013-06-06 |
JP5080682B1 (en) | 2012-11-21 |
TWI415957B (en) | 2013-11-21 |
CN103238210B (en) | 2015-12-23 |
SG188385A1 (en) | 2013-07-31 |
JP2013118259A (en) | 2013-06-13 |
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