JP5080682B1 - Gold-platinum-palladium alloy bonding wire - Google Patents
Gold-platinum-palladium alloy bonding wire Download PDFInfo
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- 229910001252 Pd alloy Inorganic materials 0.000 title claims abstract description 36
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 40
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 35
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 30
- 229910052737 gold Inorganic materials 0.000 claims abstract description 25
- 239000010931 gold Substances 0.000 claims abstract description 25
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 20
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 18
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 17
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 17
- 239000011575 calcium Substances 0.000 claims abstract description 17
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 17
- 239000011777 magnesium Substances 0.000 claims abstract description 17
- 239000003822 epoxy resin Substances 0.000 claims abstract description 11
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 11
- 229910052790 beryllium Inorganic materials 0.000 claims description 18
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 13
- 229910052684 Cerium Inorganic materials 0.000 claims description 9
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims description 9
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 7
- WMOHXRDWCVHXGS-UHFFFAOYSA-N [La].[Ce] Chemical compound [La].[Ce] WMOHXRDWCVHXGS-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 229910052736 halogen Inorganic materials 0.000 abstract description 11
- 150000002367 halogens Chemical class 0.000 abstract description 11
- 239000000126 substance Substances 0.000 abstract description 9
- BBKFSSMUWOMYPI-UHFFFAOYSA-N gold palladium Chemical compound [Pd].[Au] BBKFSSMUWOMYPI-UHFFFAOYSA-N 0.000 description 9
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 229910001020 Au alloy Inorganic materials 0.000 description 5
- 239000003353 gold alloy Substances 0.000 description 5
- -1 and Siumu Chemical compound 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000002195 synergetic effect Effects 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
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- H01L2224/852—Applying energy for connecting
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Abstract
【課題】 ハロゲン物質を含有しないエポキシ樹脂を用いた場合であっても、高温放置での信頼性が高く、高温放置後の電気特性を維持することができるアルミニウムパッドとの接続信頼性に優れた車載向け半導体用の金−白金−パラジウム合金系ボンディングワイヤを提供する。
【解決手段】
白金を０．４〜１．２質量％、パラジウムを０．０１〜０．５質量％、アルミニウムを１０〜３０質量ｐｐｍ、カルシウムまたはマグネシウムのうちの少なくとも１種を合計で１０〜６０質量ｐｐｍおよび残部が純度９９．９９９質量％以上の金からなる金−白金−パラジウム合金ボンディングワイヤである。
【選択図】 なしPROBLEM TO BE SOLVED: Even when an epoxy resin not containing a halogen substance is used, the reliability at high temperature is high, and the connection reliability with an aluminum pad capable of maintaining the electrical characteristics after high temperature is excellent. Provided is a gold-platinum-palladium alloy based bonding wire for semiconductors for vehicles.
[Solution]
0.4 to 1.2 mass% platinum, 0.01 to 0.5 mass% palladium, 10 to 30 mass ppm aluminum, 10 to 60 mass ppm in total of at least one of calcium or magnesium, and The balance is a gold-platinum-palladium alloy bonding wire made of gold with a purity of 99.999% by mass or more.
[Selection figure] None
Description
本発明は、半導体装置に用いられるＩＣチップ電極と外部リード等の基板の接続に好適な金−白金−パラジウム合金系ボンディングワイヤ、特に車載用や高速デバイス用の高温となる環境下で使用されるハロゲンフリーエポキシ樹脂封止用金−白金−パラジウム合金系ボンディングワイヤに関する。 The present invention is a gold-platinum-palladium alloy bonding wire suitable for connection between an IC chip electrode used in a semiconductor device and a substrate such as an external lead, and is used in a high temperature environment especially for in-vehicle or high-speed devices. The present invention relates to a gold-platinum-palladium alloy bonding wire for sealing halogen-free epoxy resin.
従来から車載用途で高い接合信頼性が要求される半導体装置のＩＣチップ電極と外部リードを接続する金合金線としては、高純度金に０．５〜１．２質量％のパラジウムを含有させた純度９９質量％程度の金−パラジウム合金線が信頼性に優れているとして多用されている。このような金合金線は、一端が超音波併用熱圧着ボンディング法によってＩＣチップ電極上の純アルミニウムパッドやアルミニウム合金パッドと接続され、他端が基板上の外部リード等に接続され、その後、ボンディング箇所がエポキシ樹脂で封止され、半導体装置とされる。このような純アルミニウムやアルミニウム合金パッドは、通常は真空蒸着などによって形成される。 Conventionally, as a gold alloy wire for connecting an IC chip electrode and an external lead of a semiconductor device that requires high bonding reliability in an in-vehicle application, 0.5 to 1.2% by mass of palladium is contained in high-purity gold. A gold-palladium alloy wire having a purity of about 99% by mass is frequently used because of its excellent reliability. One end of such a gold alloy wire is connected to a pure aluminum pad or an aluminum alloy pad on the IC chip electrode by an ultrasonic combined thermocompression bonding method, and the other end is connected to an external lead or the like on the substrate. The part is sealed with an epoxy resin to form a semiconductor device. Such pure aluminum or aluminum alloy pads are usually formed by vacuum deposition or the like.
車載用半導体素子が使用される環境条件は、自動車のエンジンルーム内やその近傍で使用されるため通常の使用環境よりも高温度となる。従来の高接合信頼性金−パラジウム合金ボンディングワイヤはハロゲン物質を含有する封止樹脂を使用した際の高温放置試験（ＨＴＳ）において純度９９．９９質量％以上金からなる純金ボンディングワイヤより高い接合信頼性を有していることが知られている。例えば、１７５℃で２,０００〜４,０００時間程度の使用に耐える必要がある。このような実装環境下では、金−パラジウム合金ボンディングワイヤとパッド電極部との接合強度の長期間の確保が重要となる。このようなボンディングワイヤとして、パラジウムを０．５〜０．７質量％、白金を０．1〜０．３質量％及び残部が純度９９．９９９質量％以上の金からなる、アルミニウムの金属または合金パッドを備えた高温半導体装置用金合金ボンディングワイヤ（特許文献１の請求項１）やパラジウムを０．５〜０．７質量％、白金を０．1〜０．３質量％及び残部が純度９９．９９９質量％以上の金からなる、アルミニウムの金属または合金パッドを備えた高温半導体装置用金合金ボンディングワイヤ（特許文献２の請求項１）、あるいは、封止樹脂としてハロゲンを含有するエポキシ樹脂を用いた場合に金合金細線としてマンガンを０．００５〜０．５重量％、パラジウムを０．００５〜１．０重量％、白金を０．０１〜２．０重量％、さらにカルシウム，ベリリウム，希土類元素の少なくとも１種を総計で０．０００５〜０．０５重量％の範囲で含有するボンディングワイヤ（特許文献３の請求項５）が知られている。 The environmental condition in which the on-vehicle semiconductor element is used is higher in temperature than the normal usage environment because it is used in or near the engine room of an automobile. Conventional high bonding reliability gold-palladium alloy bonding wires have higher bonding reliability than pure gold bonding wires made of gold with a purity of 99.99 mass% or more in a high temperature storage test (HTS) when using a sealing resin containing a halogen substance. It is known to have sex. For example, it is necessary to endure the use at 175 ° C. for about 2,000 to 4,000 hours. Under such a mounting environment, it is important to ensure the bonding strength between the gold-palladium alloy bonding wire and the pad electrode portion for a long period of time. As such a bonding wire, an aluminum metal or alloy comprising 0.5 to 0.7% by mass of palladium, 0.1 to 0.3% by mass of platinum, and the balance consisting of gold having a purity of 99.999% by mass or more. Gold alloy bonding wire for high-temperature semiconductor devices provided with a pad (Claim 1 of Patent Document 1), 0.5 to 0.7% by mass of palladium, 0.1 to 0.3% by mass of platinum, and the balance of 99% purity A gold alloy bonding wire for a high-temperature semiconductor device comprising an aluminum metal or alloy pad made of 999% by mass of gold (Claim 1 of Patent Document 2), or an epoxy resin containing halogen as a sealing resin When used as a gold alloy thin wire, 0.005 to 0.5% by weight of manganese, 0.005 to 1.0% by weight of palladium, 0.01 to 2.0% by weight of platinum, and Siumu, beryllium, bonding wire containing in the range of 0.0005 to 0.05 wt% of at least one in the total rare earth element (claim 5 of Patent Document 3) are known.
近年、環境対応のためハロゲン物質を含有しないエポキシ封止樹脂が多く使用されている。このエポキシ封止樹脂を使用した場合の高温放置試験では、従来の高接合信頼性金−パラジウム合金ボンディングワイヤは９９．９９質量％金ボンディングワイヤの接合信頼性と比較して優位性を示さないことがあり、場合によっては金−パラジウム合金ボンディングワイヤが純金ボンディングワイヤの接合信頼性よりも悪いことがある。
また、車載用ＩＣパッケージでは樹脂封止をしない半導体素子の高温放置試験でスクリーニングをおこなうことが一般的になってきており、１７５℃×１０００時間放置後にプル試験を行なっている。このような未封止高温放置試験を行なった場合、従来の高接合信頼性金−パラジウム合金ボンディングワイヤは、ファースト接合部のボンディングワイヤとアルミニウムパッドとの界面の劣化が早期に起こり、純金ボンディングワイヤよりも高温接合信頼性が低い結果となることがあった。
In recent years, epoxy sealing resins that do not contain a halogen substance are often used for environmental reasons. In a high temperature storage test using this epoxy sealing resin, the conventional high bonding reliability gold-palladium alloy bonding wire does not show superiority compared to the bonding reliability of 99.99 mass% gold bonding wire. In some cases, the gold-palladium alloy bonding wire may be worse than the bonding reliability of the pure gold bonding wire.
Further, in an in-vehicle IC package, it has become common to perform screening in a high temperature standing test of a semiconductor element that is not resin-sealed, and a pull test is performed after being left at 175 ° C. for 1000 hours. When such an unsealed high temperature storage test is performed, the conventional high bonding reliability gold-palladium alloy bonding wire has an early deterioration of the interface between the bonding wire of the first bonding portion and the aluminum pad, and the pure gold bonding wire In some cases, the high-temperature bonding reliability is lower than that.
従来の高接合信頼性金−パラジウム合金線は、パラジウムを白金よりも多く添加することにより、アルミニウムパッド界面における金−アルミニウム接合部の拡散を抑え、溶融ボールの接合部劣化の原因となる金属間化合物の生成を抑制しようとするものである。しかしながら、金属間化合物の生成を抑制しようとすると、金−アルミニウム接合部での金とアルミニウムの拡散を抑えすぎているため、拡散による接合強度が十分確保されず、金−アルミニウム接合部で界面の劣化が起こっていると考えられる。このようなことから、金−パラジウム合金系ボンディングワイヤは、車載用ＩＣパッケージやハロゲン物質を含有しないエポキシ封止樹脂が使用されている半導体素子には実用化されていないのが実情であった。 Conventional high-bond reliability gold-palladium alloy wires add more palladium than platinum to suppress the diffusion of gold-aluminum joints at the aluminum pad interface and cause deterioration of the joints of molten balls. It is intended to suppress the formation of compounds. However, if it is attempted to suppress the formation of intermetallic compounds, the diffusion of gold and aluminum at the gold-aluminum junction is excessively suppressed, so that the bonding strength due to diffusion is not sufficiently secured, and the interface at the gold-aluminum junction is not secured. It is thought that deterioration has occurred. For this reason, gold-palladium alloy-based bonding wires have not been put into practical use in in-vehicle IC packages or semiconductor elements in which an epoxy sealing resin containing no halogen substance is used.
本発明は、樹脂封止された半導体装置が高温、高湿および高圧下の過酷な使用環境で使用されたものであっても、アルミニウムパッドとの接続信頼性に優れた車載向け半導体用の金−白金−パラジウム合金系ボンディングワイヤを提供することを目的とする。
また、本発明は、臭素等のハロゲン物質を含有しないエポキシ樹脂を用いた場合であっても、高温放置での信頼性が高く、高温放置後の電気特性を維持することができるアルミニウムパッドとの接続信頼性に優れた車載向け半導体用の金−白金−パラジウム合金系ボンディングワイヤを提供することを目的とする。
The present invention provides a gold for a semiconductor for a vehicle that has excellent connection reliability with an aluminum pad even when a resin-encapsulated semiconductor device is used in a severe use environment under high temperature, high humidity and high pressure. An object is to provide a platinum-palladium alloy-based bonding wire.
In addition, the present invention provides an aluminum pad that is highly reliable when left at high temperatures and can maintain electrical characteristics after being left at high temperatures, even when an epoxy resin that does not contain a halogen substance such as bromine is used. An object of the present invention is to provide a gold-platinum-palladium alloy-based bonding wire for an in-vehicle semiconductor having excellent connection reliability.
本発明は、金中にパラジウムよりも高価な白金をメイン含有元素として１質量％近傍以下含有させ、かつ、パラジウムをサブ含有元素として０．５質量％以下含有させることにより、アルミニウムパッド界面における金−Ａｌ接合部の拡散を適度に制御し、同時に、ハロゲン物質を含有しないエポキシ樹脂を用いた場合であっても、溶融ボールの接合部劣化の原因となる金属間化合物の生成ないし成長を抑制しようとするものである。従来の金中にパラジウムを１質量％前後含有させたボンディングワイヤは、アルミニウムパッドとの接合部の拡散を抑えすぎているため、高温放置（ＨＴＳ）した場合、特にハロゲン物質を含有しないエポキシ樹脂を用いたときに、アルミニウムパッド界面でのボンディングワイヤの劣化が起こっていると考えられる。 In the present invention, gold at the aluminum pad interface is contained in gold by containing platinum, which is more expensive than palladium, in the vicinity of 1% by mass or less as a main-containing element, and by containing palladium as a sub-containing element in an amount of 0.5% by mass or less. -Control the diffusion and growth of Al joints at the same time, and suppress the formation or growth of intermetallic compounds that cause deterioration of the joints of molten balls even when using epoxy resins that do not contain halogen substances. It is what. The conventional bonding wire containing about 1% by mass of palladium in gold has too much suppression of diffusion at the junction with the aluminum pad. Therefore, when left at high temperature (HTS), an epoxy resin containing no halogen substance is used. When used, it is considered that the bonding wire has deteriorated at the aluminum pad interface.
また、本発明者らは、アルミニウムパッドに対し微量のアルミニウムを添加するとともに、カルシウムまたはマグネシウムを共添加して金−白金−パラジウム合金マトリックス中に微細に分散させ、アルミニウムパッド界面における金−アルミニウム接合部の拡散を適度に制御することのほか、ボンディングワイヤの機械的特性を向上させるとともに圧着ボールの真円性特性を向上させようとしたものである。ボンディングワイヤの機械的特性や真円性特性は、ベリリウムやランタン、セリウム等の希土類元素を微量添加することによってさらに向上する。 In addition, the inventors added a small amount of aluminum to the aluminum pad, and co-added calcium or magnesium to finely disperse the gold-platinum-palladium alloy matrix, so that the gold-aluminum bond at the aluminum pad interface was achieved. In addition to moderately controlling the diffusion of the portion, it is intended to improve the mechanical characteristics of the bonding wire and the roundness characteristics of the press-bonded ball. The mechanical characteristics and roundness characteristics of the bonding wire are further improved by adding a trace amount of rare earth elements such as beryllium, lanthanum, and cerium.
本発明の課題を解決するための半導体素子用金−白金−パラジウム合金系ボンディングワイヤの一つは、白金を０．４〜１．２質量％、パラジウムを０．０１〜０．５質量％、アルミニウムを１０〜３０質量ｐｐｍ、カルシウムまたはマグネシウムのうちの少なくとも１種を合計で１０〜６０質量ｐｐｍおよび残部が純度９９．９９９質量％以上の金からなるボンディングワイヤである。 One of the gold-platinum-palladium alloy-based bonding wires for semiconductor elements for solving the problems of the present invention is that platinum is 0.4 to 1.2% by mass, palladium is 0.01 to 0.5% by mass, It is a bonding wire made of gold having 10 to 30 mass ppm of aluminum, 10 to 60 mass ppm in total of at least one of calcium and magnesium, and the balance being 99.999 mass% or more in purity.
また、もうひとつの本発明の課題を解決するための半導体素子用金−白金−パラジウム合金系ボンディングワイヤは、白金を０．４〜１．２質量％、パラジウムを０．０１〜０．５質量％、アルミニウムを１０〜３０質量ｐｐｍ、カルシウムまたはマグネシウムのうちの少なくとも１種を合計で１０〜６０質量ｐｐｍ、ベリリウムまたは希土類元素のうちの少なくとも１種を合計で１〜３０質量ｐｐｍ、および残部が純度９９．９９９質量％以上の金からなるボンディングワイヤである。 Further, a gold-platinum-palladium alloy bonding wire for a semiconductor element for solving another problem of the present invention is 0.4 to 1.2% by mass of platinum and 0.01 to 0.5% by mass of palladium. %, 10-30 mass ppm of aluminum, 10-60 mass ppm in total of at least one of calcium or magnesium, 1-30 mass ppm in total of at least one of beryllium or rare earth elements, and the balance It is a bonding wire made of gold having a purity of 99.999% by mass or more.
（金−白金−パラジウム合金）
本発明の金−白金−パラジウム合金は、白金を０．４〜１．２質量％、パラジウムを０．０１〜０．５質量％および残部が純度９９．９９９質量％以上の金からなる完全に均一固溶した合金である。
本発明において、白金をメイン元素とし、パラジウムをサブ元素としたのは、純アルミニウムパッドやアルミニウム合金パッドとの接合部における金とアルミニウムとの拡散速度を適度にコントロールして高温放置時の接合界面の劣化を抑制するためである。
このため白金を０．４〜１．２質量％、パラジウムを０．０１〜０．５質量％とした。好ましくは、白金とパラジウムの総量が０．６〜１．３質量％である。
(Gold-platinum-palladium alloy)
The gold-platinum-palladium alloy of the present invention is composed entirely of gold having a platinum content of 0.4 to 1.2% by mass, palladium of 0.01 to 0.5% by mass, and the balance of 99.999% by mass or more. It is a homogeneous solid solution alloy.
In the present invention, platinum is the main element, and palladium is the sub-element, because the diffusion interface between gold and aluminum at the junction with a pure aluminum pad or aluminum alloy pad is moderately controlled and the interface is left at high temperature. It is for suppressing deterioration of the.
For this reason, platinum was 0.4 to 1.2 mass%, and palladium was 0.01 to 0.5 mass%. Preferably, the total amount of platinum and palladium is 0.6 to 1.3% by mass.
個別的には、それぞれ、白金が０．４〜０．８質量％、パラジウムが０．０５〜０．４質量％が好ましく、白金が０．５〜０．７質量％、パラジウムが０．１〜０．３質量％がより好ましい。白金／パラジウムの比は、２〜４の範囲が好ましく、２．５〜３．５の範囲がより好ましい。
また、本発明において、残部を純度９９．９９９質量％以上の金としたのは、不可避的不純物の量を最大１０質量ｐｐｍ未満とすることによって、アルミニウムおよびカルシウムまたはマグネシウム等の微量添加元素の効果をよりよく発揮させるためである。
Individually, platinum is preferably 0.4 to 0.8 mass%, palladium is preferably 0.05 to 0.4 mass%, platinum is 0.5 to 0.7 mass%, and palladium is 0.1 mass%, respectively. -0.3 mass% is more preferable. The ratio of platinum / palladium is preferably in the range of 2 to 4, and more preferably in the range of 2.5 to 3.5.
In the present invention, the balance is gold having a purity of 99.999% by mass or more because the amount of unavoidable impurities is less than 10 ppm by mass at the maximum, so that the effect of trace additive elements such as aluminum and calcium or magnesium can be obtained. It is for making it exhibit well.
本発明において、アルミニウムを１０〜３０質量ｐｐｍとした。
一般的にアルミニウムは、金と金属間化合物を形成するので、純金ボンディングワイヤや金−白金合金系ボンディングワイヤに使用されない元素である。しかし、本発明の金−白金−パラジウム合金ボンディングワイヤでは、ボンディングワイヤの機械的強度を向上し、カルシウムまたはマグネシウムの相乗効果によって高温放置しても高いプル強度を保持する。
アルミニウムが１０質量ｐｐｍ未満では上記効果が発揮できず、アルミニウムが３０質量ｐｐｍを超えると、圧着ボール真円性が悪くなってしまう。よって、アルミニウムの範囲を１０〜３０質量ｐｐｍとした。好ましくは、アルミニウムの範囲は１６〜２４質量ｐｐｍである。
In this invention, aluminum was 10-30 mass ppm.
In general, aluminum forms an intermetallic compound with gold, and therefore is an element that is not used for pure gold bonding wires or gold-platinum alloy bonding wires. However, the gold-platinum-palladium alloy bonding wire of the present invention improves the mechanical strength of the bonding wire and maintains a high pull strength even when left at high temperatures due to the synergistic effect of calcium or magnesium.
If the aluminum content is less than 10 ppm by mass, the above-mentioned effect cannot be exhibited. Therefore, the range of aluminum was 10-30 mass ppm. Preferably, the aluminum range is 16 to 24 ppm by mass.
本発明において、カルシウムまたはマグネシウムのうちの少なくとも１種を合計で１０〜６０質量ｐｐｍとした。
ボンディングワイヤの添加元素として、一般的にカルシウムとマグネシウムはボンディングワイヤの機械的強度および圧着ボール真円性を向上する元素と考えられている。本発明の金−白金−パラジウム合金ボンディングワイヤでは、アルミニウムとの相乗効果によって、カルシウムはボンディングワイヤの機械的強度を向上し、マグネシウムはボンディングワイヤの圧着ボールの真円性を向上した。
しかし、カルシウムまたはマグネシウムのうちの少なくとも１種の合計が１０質量ｐｐｍ未満では上記の効果が発揮できず、合計で６０質量ｐｐｍを超えると、ボンディングワイヤの機械的強度が強くなりすぎ、アルミニウムパッドを破壊する。よって、カルシウムまたはマグネシウムのうちの少なくとも１種を合計で１０〜６０質量ｐｐｍとした。カルシウムおよびマグネシウムを合計で１０〜３０質量ｐｐｍ添加することが好ましく、合計で１６〜２４質量ｐｐｍ共添加することがより好ましい。
In this invention, at least 1 sort (s) of calcium or magnesium was 10-60 mass ppm in total.
In general, calcium and magnesium are considered to be elements that improve the mechanical strength of the bonding wire and the roundness of the press-bonded ball as additive elements of the bonding wire. In the gold-platinum-palladium alloy bonding wire of the present invention, due to a synergistic effect with aluminum, calcium improved the mechanical strength of the bonding wire, and magnesium improved the roundness of the bonding wire crimping ball.
However, if the total of at least one of calcium or magnesium is less than 10 ppm by mass, the above effect cannot be exhibited. If the total exceeds 60 ppm by mass, the mechanical strength of the bonding wire becomes too strong, and the aluminum pad is Destroy. Therefore, at least one of calcium or magnesium was made 10 to 60 ppm by mass in total. It is preferable to add 10 to 30 mass ppm of calcium and magnesium in total, and it is more preferable to co-add 16 to 24 mass ppm in total.
本発明において、ベリリウムまたは希土類元素のうちの少なくとも１種を合計で１〜３０質量ｐｐｍの範囲とした。
ベリリウムまたは希土類元素も、一般的に、ボンディングワイヤの機械的強度を向上する元素と考えられている。本発明の金−白金−パラジウム合金ボンディングワイヤでは、アルミニウムおよびカルシウムまたはマグネシウムとの相乗効果によって、ベリリウムまたは希土類元素は、ボンディングワイヤの機械的強度を向上するとともに、第一ボンド時の圧着ボールの真円性を向上した。
In the present invention, at least one of beryllium or a rare earth element is in the range of 1 to 30 mass ppm in total.
Beryllium or rare earth elements are also generally considered as elements that improve the mechanical strength of bonding wires. In the gold-platinum-palladium alloy bonding wire of the present invention, the beryllium or rare earth element improves the mechanical strength of the bonding wire due to the synergistic effect with aluminum and calcium or magnesium, and the trueness of the press-bonded ball at the first bonding is increased. Improved circularity.
ベリリウムを１〜２０質量ｐｐｍおよび希土類元素を１〜６０質量ｐｐｍ共添加することが好ましい。希土類元素は、ランタン１〜３０質量ｐｐｍまたはセリウム１〜３０質量ｐｐｍを含めることが望ましく、ランタン１〜３０質量ｐｐｍおよびセリウム１〜３０質量ｐｐｍを共添加することがより望ましい。ベリリウム６〜１４質量ｐｐｍとランタン１〜３０質量ｐｐｍとセリウム１〜３０質量ｐｐｍの組合せ、ベリリウム１〜２０質量ｐｐｍとランタン１０〜３０質量ｐｐｍとセリウム１〜３０質量ｐｐｍの組合せ、またはベリリウム１〜２０質量ｐｐｍとランタン１〜３０質量ｐｐｍとセリウム１０〜３０質量ｐｐｍの組合せがより好ましく、ベリリウム６〜１４質量ｐｐｍとランタン１０〜３０質量ｐｐｍとセリウム１０〜３０質量ｐｐｍの組合せが更に好ましく、ベリリウム６〜１４質量ｐｐｍとランタン１４〜２６質量ｐｐｍとセリウム１４〜２６質量ｐｐｍの組合せが最適である。 It is preferable to co-add 1-20 mass ppm of beryllium and 1-60 mass ppm of rare earth elements. The rare earth element desirably contains 1 to 30 mass ppm of lanthanum or 1 to 30 mass ppm of cerium, and more desirably co-adds 1 to 30 mass ppm of lanthanum and 1 to 30 mass ppm of cerium. Combination of beryllium 6-14 mass ppm and lanthanum 1-30 mass ppm and cerium 1-30 mass ppm, beryllium 1-20 mass ppm, lanthanum 10-30 mass ppm, cerium 1-30 mass ppm, or beryllium 1 A combination of 20 ppm by mass, 1-30 ppm by mass of lanthanum, and 10-30 ppm by mass of cerium is more preferred, and a combination of 6-14 ppm by mass of beryllium, 10-30 ppm by mass of lanthanum, and 10-30 ppm by mass of cerium is further preferred. A combination of 6 to 14 ppm by mass, 14 to 26 ppm by mass of lanthanum, and 14 to 26 ppm by mass of cerium is optimal.
上述のように、本発明の金−白金−パラジウム合金ボンディングワイヤは、溶融ボールと純アルミニウムパッドやアルミニウム合金パッドとの接合性が良好であり、圧着ボールの真円性が確保することができ、また、高温下で放置しても第一ボンドの接合界面のボイドが粗大化して進展することが無く、安定した接合信頼性を確保することができ、プル強度も高い。さらに、本発明の金−白金−パラジウム合金からなるボンディングワイヤは、ハロゲン物質を含有しないエポキシ樹脂を用いて高温下で放置しても、第一ボンドの接合界面の劣化が起こらず、電気的接続を劣化しない効果がある。 As described above, the gold-platinum-palladium alloy bonding wire of the present invention has good bondability between the molten ball and the pure aluminum pad or aluminum alloy pad, and can ensure the roundness of the press-bonded ball, Further, even when left at high temperature, voids at the bonding interface of the first bond are not coarsened and propagated, stable bonding reliability can be ensured, and pull strength is high. Furthermore, the bonding wire made of the gold-platinum-palladium alloy of the present invention does not cause deterioration of the bonding interface of the first bond even when left at high temperature using an epoxy resin not containing a halogen substance. There is an effect that does not deteriorate.
[実施例]
表１左欄に示される成分組成を有する金−白金−パラジウム合金（金の純度９９．９９９９質量％以上）を溶解鋳造し、荒引き加工して焼鈍熱処理をし、次いで２０μｍの最終線径まで連続伸線をすることにより２０μｍの線径を有する本発明に係る金−白金−パラジウム合金ボンディングワイヤ（以下、「本発明ワイヤ」という）１〜２７と、本発明の組成範囲に入らない比較品の金−白金−パラジウム合金ボンディングワイヤおよび従来品の金−パラジウム合金系ボンディングワイヤ（以下、まとめて「比較ワイヤ」という）２８〜３６を製造した。
[Example]
A gold-platinum-palladium alloy (gold purity of 99.9999% by mass or more) having the component composition shown in the left column of Table 1 is melt cast, roughed and annealed, and then to a final wire diameter of 20 μm. Gold-platinum-palladium alloy bonding wires (hereinafter referred to as “the wire of the present invention”) 1 to 27 according to the present invention having a wire diameter of 20 μm by continuous wire drawing and comparative products that do not fall within the composition range of the present invention Of gold-platinum-palladium alloy bonding wires and conventional gold-palladium alloy-based bonding wires (hereinafter collectively referred to as “comparison wires”) 28-36.
これらの本発明ワイヤ１〜２７および比較ワイヤ２８〜３６について、ワイヤ強度を測定した。その後、Ｋｕｌｉｃｋｅ＆Ｓｏｆｆａ（キューリック・アンド・ソファ）製のワイヤボンダー（商品名：Ｍａｘμｍ ｕｌｔｒａ）にセットし、半導体ＩＣチップに搭載されたアルミニウム−０．５質量％銅合金からなる７０μｍ角アルミニウム合金パッドに、４０μｍ狙いでフリー・エアー・ボール（ＦＡＢ）を作製し、加熱温度：２００℃、ループ長さ：５ｍｍ、ループ高さ：２２０μｍ、圧着ボール径：４８μｍ、圧着ボール高さ：１４μｍ、の条件でボンディングを行なって、真円性のばらつきについて評価を行なった。ついで、１７５℃で１，０００時間放置した後、ボンディングワイヤにプル試験を行った。さらにボンディングしたサンプルを樹脂封止し１７５℃で４０００時間放置したのち、電気抵抗の測定を行った。 The wire strength was measured for these inventive wires 1-27 and comparative wires 28-36. After that, it is set on a wire bonder (trade name: Max μm ultra) manufactured by Kullike & Soffa, and applied to a 70 μm square aluminum alloy pad made of aluminum-0.5 mass% copper alloy mounted on a semiconductor IC chip. A free air ball (FAB) was produced aiming at 40 μm, under the conditions of heating temperature: 200 ° C., loop length: 5 mm, loop height: 220 μm, pressure ball diameter: 48 μm, pressure ball height: 14 μm Bonding was performed and the roundness variation was evaluated. Next, after leaving at 175 ° C. for 1,000 hours, the bonding wire was subjected to a pull test. Further, the bonded sample was sealed with resin and allowed to stand at 175 ° C. for 4000 hours, and then the electrical resistance was measured.
［ワイヤ強度の評価方法］
各々の合金組成に対し、１００ｍｍ長の試料をテンシロン型引張試験機（型式ＵＴＭ−２）にて１０ｍｍ／ｍｉｎの速度で引張り、破断した際の強度を測定した。測定数は５点とし、その平均値にて評価した。それらの評価結果を表１右欄に示す。
[Evaluation method of wire strength]
For each alloy composition, a 100 mm long sample was pulled at a rate of 10 mm / min with a Tensilon type tensile tester (model UTM-2), and the strength at break was measured. The number of measurements was 5 points, and the average value was evaluated. The evaluation results are shown in the right column of Table 1.
［圧着ボール真円性の評価方法］
各々の合金組成に対し、評価用のＩＣチップに１００本ボンディングしたときの圧着ボールのＸ方向（超音波印加と直角方向）とＹ方向（超音波印加と方向）の長さを測定し、その比を評価した。それらの評価結果を表１右欄に示す。
[Evaluation method for roundness of crimped ball]
For each alloy composition, the length of the press-bonded ball in the X direction (in a direction perpendicular to the application of ultrasonic waves) and the Y direction (in the direction of ultrasonic application) when 100 pieces are bonded to the IC chip for evaluation is measured. The ratio was evaluated. The evaluation results are shown in the right column of Table 1.
［プル強度］
各々の合金組成に対し、専用のＩＣチップにワイヤボンダーでボンディングを行い、１００点についてＤａｇｅ社製「万能ボンドテスタ シリーズ４０００」を用いファーストボンド直上部でプル試験を行い、プル強度の測定を行った。その後、同ボンディングサンプルを１７５℃、１０００時間放置後、再度１００点についてプル強度の測定をおこなった。プル強度は高温放置後のプル強度の低下およびファースト接合部の剥がれにて評価した。プル強度の評価結果を表１右欄に示す。
[Pull strength]
For each alloy composition, bonding was performed on a dedicated IC chip with a wire bonder, and a pull test was performed on 100 points using a “Universal Bond Tester Series 4000” manufactured by Dage, directly above the first bond to measure the pull strength. . Thereafter, the bonding sample was allowed to stand at 175 ° C. for 1000 hours, and then the pull strength was measured again at 100 points. The pull strength was evaluated by a drop in pull strength after leaving at high temperature and peeling of the first joint. The evaluation results of pull strength are shown in the right column of Table 1.
［電気抵抗］
各々の合金組成に対し、専用のＩＣチップにワイヤボンダーでボンディングを行い、ハロゲンを含まないエポキシ樹脂（日東電工株式会社製 製品名ＧＥ−７４７０Ｃ）で封止し、電気抵抗測定用サンプルを作製した。電気抵抗は、ＫＥＩＴＨＬＥＹ社製の製品名「ソースメーター（型式２００４）」を用い、専用のＩＣソケットおよび専用に構築した自動測定システムでおこなった。測定方法はいわゆる直流四端子法で測定している。
電気抵抗は、外部リード１００対（２００ピン）について、高温放置前と１７５℃ ４０００時間の高温放置後に測定した。電気抵抗は、高温放置前と比較して抵抗が２０％以上になった対が発生した場合、故障発生とし、故障発生率を評価した。電気抵抗の評価結果を表１右欄に示す。
[Electric resistance]
Each alloy composition was bonded to a dedicated IC chip with a wire bonder and sealed with an epoxy resin containing no halogen (product name: GE-7470C, manufactured by Nitto Denko Corporation) to produce a sample for measuring electrical resistance. . The electrical resistance was measured with a dedicated IC socket and a dedicated automatic measurement system using a product name “source meter (model 2004)” manufactured by KEITHLEY. The measuring method is the so-called DC four-terminal method.
The electrical resistance was measured for 100 pairs of external leads (200 pins) before leaving at high temperature and after leaving at 175 ° C. for 4000 hours. As for the electrical resistance, when a pair having a resistance of 20% or more compared with that before standing at high temperature occurred, a failure occurred, and the failure occurrence rate was evaluated. The evaluation results of electrical resistance are shown in the right column of Table 1.
実施品Ｎｏ．１〜Ｎｏ．７が請求項１に係る発明、実施品Ｎｏ．８〜Ｎｏ．２７が請求項２に係る発明、実施品Ｎｏ．２およびＮｏ．２３〜Ｎｏ．２７が請求項３に係る発明、実施品Ｎｏ．１１、Ｎｏ．１３〜Ｎｏ．１６およびＮｏ．２０〜Ｎｏ．２７が請求項４に係る発明、実施品Ｎｏ．１３〜Ｎｏ．１６およびＮｏ．２０〜Ｎｏ．２７が請求項５に係る発明、並びに、実施品Ｎｏ．１５、Ｎｏ．２０およびＮｏ．２５〜Ｎｏ．２７が請求項６に係る発明である。 Product No. 1-No. 7 is an invention according to claim 1 and an implementation product No. 8-No. 27 is the invention according to claim 2, and the implementation product no. 2 and no. 23-No. 27 is an invention according to claim 3 and an implementation product No. 11, no. 13-No. 16 and no. 20-No. 27 is an invention according to claim 4 and an implementation product No. 13-No. 16 and no. 20-No. 27 is the invention according to claim 5 and the implementation product No. 15, no. 20 and no. 25-No. 27 is the invention according to claim 6.
表１右欄中、ワイヤ強度は強度測定結果を示し、◎は約８３．４Ｎ（8.5gf）以上、○は約６８．６Ｎ（７．０ｇｆ）以上、△は約５３．９Ｎ（５．５ｇｆ）以上、×は約５３．０Ｎ（５．４ｇｆ）以下をそれぞれ示す。
表１右欄中、圧着ボール真円性は、圧着ボール径ＸとＹの比Ｘ／Ｙを示し、◎は０．９５〜１．０５、○は０．９〜１．１０、△は０．８〜１．２、×は０．７９以下および１．２１以上をそれぞれ示す。
表１右欄中、プル強度はプル強度の低下量およびファースト接合部の剥がれを示し、◎は低下量約０〜９．８Ｎ（０〜１．０ｇｆ）、○は約１０．８〜１９．６Ｎ（１．１〜２．０ｇｆ）、△は約２０．６〜３９．２Ｎ（２．１ｇｆ〜４．０ｇｆ）、×は約４０．２Ｎ（４．１ｇｆ）以上およびファースト接合部剥がれ発生をそれぞれ示す。
In the right column of Table 1, the wire strength indicates the strength measurement result, ◎ is about 83.4 N (8.5 gf) or more, ◯ is about 68.6 N (7.0 gf) or more, and △ is about 53.9 N (5.5 gf). ), X indicates about 53.0 N (5.4 gf) or less.
In Table 1 right column, the roundness of the press-bonded ball indicates the ratio X / Y of the press-bonded ball diameter X and Y, ◎ is 0.95 to 1.05, ○ is 0.9 to 1.10, and Δ is 0. .8 to 1.2, x represents 0.79 or less and 1.21 or more, respectively.
In Table 1 right column, the pull strength indicates the amount of decrease in the pull strength and peeling of the first joint, ◎ indicates the amount of decrease of about 0 to 9.8 N (0 to 1.0 gf), and ○ indicates about 10.8 to 19. 6N (1.1 to 2.0 gf), Δ is about 20.6 to 39.2 N (2.1 gf to 4.0 gf), x is about 40.2 N (4.1 gf) or more, and first joint peeling occurs. Each is shown.
表１右欄中、電気抵抗は故障発生率を示し、◎は０％、○は０．１〜５．０％、△は５．１〜３０．０％、×は３０．１％以上をそれぞれ示す。
表１右欄に示される結果から明らかなように、本発明ワイヤは、ワイヤ強度が高く、圧着ボールの真円性が良く、高温放置後のプル強度の低下が無く、ハロゲン物質を含有しないエポキシ樹脂を用いた場合の高温放置後の電気抵抗上昇が見られないのに対し、比較ワイヤ２８〜３６はこれら特性の少なくともいずれか一つは不良となることが分かる。
In the right column of Table 1, the electric resistance indicates the failure occurrence rate, ◎ is 0%, ○ is 0.1 to 5.0%, Δ is 5.1 to 30.0%, and x is 30.1% or more. Each is shown.
As is apparent from the results shown in the right column of Table 1, the wire of the present invention has high wire strength, good roundness of the press-bonded ball, no drop in pull strength after standing at high temperature, and does not contain a halogen substance. It can be seen that, although no increase in electrical resistance is observed after leaving the resin at a high temperature when using a resin, the comparison wires 28 to 36 are defective in at least one of these characteristics.
本発明のボンディングワイヤは、車載用や高速デバイス用の高温となる環境下で使用されるハロゲンフリーエポキシ樹脂封止用の半導体の用途がある。 The bonding wire of the present invention has a use of a semiconductor for encapsulating a halogen-free epoxy resin used in a high temperature environment for in-vehicle use or high-speed devices.
Claims (7)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2011264547A JP5080682B1 (en) | 2011-12-02 | 2011-12-02 | Gold-platinum-palladium alloy bonding wire |
| MYPI2013002268A MY155461A (en) | 2011-12-02 | 2012-11-21 | Gold-platinum-palladium alloy bonding wire |
| SG2013015953A SG188385A1 (en) | 2011-12-02 | 2012-11-21 | Gold-platinum-palladium alloy bonding wire |
| PCT/JP2012/080152 WO2013080851A1 (en) | 2011-12-02 | 2012-11-21 | Gold-platinum-palladium alloy bonding wire |
| CN201280003142.2A CN103238210B (en) | 2011-12-02 | 2012-11-21 | gold-platinum-palladium alloy bonding wire |
| TW101144795A TWI415957B (en) | 2011-12-02 | 2012-11-29 | Gold - platinum - palladium alloy lap line |
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| JP3650461B2 (en) * | 1996-04-04 | 2005-05-18 | 新日本製鐵株式会社 | Gold alloy fine wire for semiconductor devices |
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| JP4130843B1 (en) * | 2007-04-17 | 2008-08-06 | 田中電子工業株式会社 | High reliability gold alloy bonding wire and semiconductor device |
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