KR101584843B1 - 액 처리 장치, 액 처리 방법 및 기억 매체 - Google Patents

액 처리 장치, 액 처리 방법 및 기억 매체 Download PDF

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KR101584843B1
KR101584843B1 KR1020120092351A KR20120092351A KR101584843B1 KR 101584843 B1 KR101584843 B1 KR 101584843B1 KR 1020120092351 A KR1020120092351 A KR 1020120092351A KR 20120092351 A KR20120092351 A KR 20120092351A KR 101584843 B1 KR101584843 B1 KR 101584843B1
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liquid
temperature
circulation line
supply
discharge
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KR20130023123A (ko
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노리히로 이토
다카시 나가이
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
KR1020120092351A 2011-08-25 2012-08-23 액 처리 장치, 액 처리 방법 및 기억 매체 Active KR101584843B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-183996 2011-08-25
JP2011183996A JP5714449B2 (ja) 2011-08-25 2011-08-25 液処理装置、液処理方法および記憶媒体

Publications (2)

Publication Number Publication Date
KR20130023123A KR20130023123A (ko) 2013-03-07
KR101584843B1 true KR101584843B1 (ko) 2016-01-13

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Country Status (4)

Country Link
US (1) US9711380B2 (https=)
JP (1) JP5714449B2 (https=)
KR (1) KR101584843B1 (https=)
TW (1) TWI525685B (https=)

Cited By (1)

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KR20200001481A (ko) * 2018-06-26 2020-01-06 가부시키가이샤 스크린 홀딩스 처리액 온도 조정 장치, 기판 처리 장치, 및 처리액 공급 방법

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JP2013004614A (ja) * 2011-06-14 2013-01-07 Toshiba Corp 塗布膜形成方法及び塗布膜形成装置
CN103377972B (zh) * 2012-04-30 2016-12-28 细美事有限公司 基板处理装置和供给处理溶液的方法
JP6302708B2 (ja) * 2013-03-29 2018-03-28 芝浦メカトロニクス株式会社 ウェットエッチング装置
JP6247100B2 (ja) * 2014-01-10 2017-12-13 株式会社Ｓｃｒｅｅｎホールディングス 排液処理装置および排液処理方法
KR101696194B1 (ko) * 2014-05-29 2017-01-17 세메스 주식회사 기판 처리 장치 및 방법
KR102232033B1 (ko) * 2014-07-21 2021-03-25 세메스 주식회사 약액 처리 장치 및 이를 포함하는 기판 처리 장치
JP6587865B2 (ja) * 2014-09-30 2019-10-09 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
US9966282B2 (en) * 2014-09-30 2018-05-08 Shibaura Mechatronics Corporation Substrate processing apparatus and substrate processing method
JP6489479B2 (ja) * 2015-03-26 2019-03-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6485904B2 (ja) * 2015-03-03 2019-03-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US10332761B2 (en) * 2015-02-18 2019-06-25 SCREEN Holdings Co., Ltd. Substrate processing apparatus
JP6504540B2 (ja) * 2015-02-25 2019-04-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US10403517B2 (en) * 2015-02-18 2019-09-03 SCREEN Holdings Co., Ltd. Substrate processing apparatus
JP6509583B2 (ja) * 2015-02-25 2019-05-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN109037111B (zh) 2015-02-25 2022-03-22 株式会社思可林集团 基板处理装置
JP6461641B2 (ja) * 2015-02-25 2019-01-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US10780461B2 (en) * 2015-05-15 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd Methods for processing substrate in semiconductor fabrication
JP6418555B2 (ja) * 2015-06-18 2018-11-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6501663B2 (ja) * 2015-07-23 2019-04-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102432858B1 (ko) * 2015-09-01 2022-08-16 삼성전자주식회사 약액 공급 장치 및 이를 구비하는 반도체 처리 장치
US10714365B2 (en) * 2015-11-16 2020-07-14 Tokyo Electron Limited Liquid processing apparatus
KR101870650B1 (ko) * 2016-08-25 2018-06-27 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6579067B2 (ja) * 2016-09-09 2019-09-25 株式会社ダイフク 流量測定装置及び流量測定システム
JP6803737B2 (ja) * 2016-12-07 2020-12-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6839990B2 (ja) * 2017-01-31 2021-03-10 株式会社Ｓｃｒｅｅｎホールディングス 処理液供給装置、基板処理装置、および処理液供給方法
JP6916633B2 (ja) * 2017-02-24 2021-08-11 株式会社Ｓｃｒｅｅｎホールディングス 処理液供給装置、基板処理装置、および処理液供給方法
JP6865626B2 (ja) * 2017-04-21 2021-04-28 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP7195095B2 (ja) * 2018-09-20 2022-12-23 東京エレクトロン株式会社 基板処理装置
JP7132054B2 (ja) * 2018-09-21 2022-09-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、及び基板処理方法
JP7382164B2 (ja) 2019-07-02 2023-11-16 東京エレクトロン株式会社 液処理装置および液処理方法
WO2021131832A1 (ja) * 2019-12-27 2021-07-01 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7460983B2 (ja) * 2020-04-28 2024-04-03 倉敷紡績株式会社 処理液供給システムおよび処理液供給方法
JP7499622B2 (ja) * 2020-06-23 2024-06-14 東京エレクトロン株式会社 液処理装置および液処理方法
KR102646484B1 (ko) * 2020-12-29 2024-03-12 세메스 주식회사 약액 공급 장치 및 이를 포함하는 기판 처리 장치
CN112705543B (zh) * 2020-12-31 2023-07-04 上海至纯洁净系统科技股份有限公司 一种湿法清洗设备防震动进液系统及方法
JP2022136767A (ja) * 2021-03-08 2022-09-21 キオクシア株式会社 基板処理装置および基板処理方法
JP7702479B2 (ja) * 2021-04-21 2025-07-03 東京エレクトロン株式会社 ガス供給システム、基板処理装置、及びガス供給システムの運用方法
KR20230082486A (ko) * 2021-12-01 2023-06-08 세메스 주식회사 액 공급 유닛 및 이를 포함하는 기판 처리 장치
KR102546282B1 (ko) 2022-03-22 2023-06-21 삼성전자주식회사 초순수 공급 장치, 이를 포함하는 기판 처리 시스템 및 이를 이용한 기판 처리 방법
CN115027770A (zh) * 2022-05-10 2022-09-09 深圳市汇芯通信技术有限公司 芯片开封系统和芯片开封方法
KR102779634B1 (ko) * 2022-12-28 2025-03-12 세메스 주식회사 액 공급장치, 기판처리장치 및 기판처리방법
CN119536397A (zh) * 2023-08-30 2025-02-28 盛美半导体设备(上海)股份有限公司 溶液温度实时调控系统及方法

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JP2007123393A (ja) 2005-10-26 2007-05-17 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2009272548A (ja) 2008-05-09 2009-11-19 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2010092921A (ja) 2008-10-03 2010-04-22 Shibaura Mechatronics Corp 基板の処理装置及び処理方法

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JP2003017453A (ja) 2001-04-27 2003-01-17 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2007123393A (ja) 2005-10-26 2007-05-17 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2009272548A (ja) 2008-05-09 2009-11-19 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2010092921A (ja) 2008-10-03 2010-04-22 Shibaura Mechatronics Corp 基板の処理装置及び処理方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200001481A (ko) * 2018-06-26 2020-01-06 가부시키가이샤 스크린 홀딩스 처리액 온도 조정 장치, 기판 처리 장치, 및 처리액 공급 방법
KR102202855B1 (ko) 2018-06-26 2021-01-14 가부시키가이샤 스크린 홀딩스 처리액 온도 조정 장치, 기판 처리 장치, 및 처리액 공급 방법

Also Published As

Publication number Publication date
JP5714449B2 (ja) 2015-05-07
US9711380B2 (en) 2017-07-18
US20130048609A1 (en) 2013-02-28
KR20130023123A (ko) 2013-03-07
TWI525685B (zh) 2016-03-11
TW201322323A (zh) 2013-06-01
JP2013045972A (ja) 2013-03-04

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