KR101550590B1 - 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치 - Google Patents

반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치 Download PDF

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KR101550590B1
KR101550590B1 KR1020140010007A KR20140010007A KR101550590B1 KR 101550590 B1 KR101550590 B1 KR 101550590B1 KR 1020140010007 A KR1020140010007 A KR 1020140010007A KR 20140010007 A KR20140010007 A KR 20140010007A KR 101550590 B1 KR101550590 B1 KR 101550590B1
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containing gas
gas
atom
atom containing
substrate
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KR20140118711A (ko
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나오하루 나카이소
카즈히로 유아사
유키 키타하라
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가부시키가이샤 히다치 고쿠사이 덴키
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020140010007A 2013-03-28 2014-01-28 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치 Active KR101550590B1 (ko)

Applications Claiming Priority (2)

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JPJP-P-2013-069109 2013-03-28
JP2013069109A JP2014192485A (ja) 2013-03-28 2013-03-28 半導体装置の製造方法、基板処理方法及び基板処理装置

Publications (2)

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KR20140118711A KR20140118711A (ko) 2014-10-08
KR101550590B1 true KR101550590B1 (ko) 2015-09-07

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US (1) US9437426B2 (https=)
JP (1) JP2014192485A (https=)
KR (1) KR101550590B1 (https=)
TW (1) TWI578384B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12272705B2 (en) 2020-09-29 2025-04-08 Samsung Electronics Co., Ltd. Image sensor

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5394360B2 (ja) * 2010-03-10 2014-01-22 東京エレクトロン株式会社 縦型熱処理装置およびその冷却方法
JP6630237B2 (ja) 2016-06-06 2020-01-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及びプログラム
CN111902918B (zh) 2018-04-27 2024-07-26 株式会社国际电气 半导体装置的制造方法、基板处理装置以及记录介质
JP7228612B2 (ja) * 2020-03-27 2023-02-24 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、基板処理方法及びプログラム

Citations (3)

* Cited by examiner, † Cited by third party
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KR100718180B1 (ko) 2004-03-29 2007-05-15 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
US20100120240A1 (en) 2008-11-11 2010-05-13 Hynix Semiconductor Inc. Method for fabricating pmos transistor and method for forming dual gate using the same
KR100984668B1 (ko) 2005-12-28 2010-10-01 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치

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JP3193402B2 (ja) * 1990-08-31 2001-07-30 株式会社日立製作所 半導体装置の製造方法
US20070087581A1 (en) * 2005-09-09 2007-04-19 Varian Semiconductor Equipment Associates, Inc. Technique for atomic layer deposition
US20070065576A1 (en) * 2005-09-09 2007-03-22 Vikram Singh Technique for atomic layer deposition
JP2008235397A (ja) * 2007-03-19 2008-10-02 Elpida Memory Inc 半導体装置の製造方法
JP5697849B2 (ja) * 2009-01-28 2015-04-08 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP2010251654A (ja) 2009-04-20 2010-11-04 Elpida Memory Inc 成膜方法および半導体装置の製造方法
JP2011023576A (ja) 2009-07-16 2011-02-03 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
US8012859B1 (en) * 2010-03-31 2011-09-06 Tokyo Electron Limited Atomic layer deposition of silicon and silicon-containing films
JP2011216784A (ja) * 2010-04-01 2011-10-27 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
JP5696530B2 (ja) * 2010-05-01 2015-04-08 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置
JP5847566B2 (ja) * 2011-01-14 2016-01-27 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP5919482B2 (ja) * 2011-03-03 2016-05-18 パナソニックＩｐマネジメント株式会社 触媒化学気相成膜装置、それを用いた成膜方法及び触媒体の表面処理方法
JP2012186275A (ja) * 2011-03-04 2012-09-27 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP2012204691A (ja) * 2011-03-25 2012-10-22 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
JP5710529B2 (ja) * 2011-09-22 2015-04-30 株式会社東芝 半導体装置及びその製造方法
JP6267080B2 (ja) * 2013-10-07 2018-01-24 東京エレクトロン株式会社 シリコン窒化物膜の成膜方法および成膜装置

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KR100718180B1 (ko) 2004-03-29 2007-05-15 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
KR100984668B1 (ko) 2005-12-28 2010-10-01 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
US20100120240A1 (en) 2008-11-11 2010-05-13 Hynix Semiconductor Inc. Method for fabricating pmos transistor and method for forming dual gate using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12272705B2 (en) 2020-09-29 2025-04-08 Samsung Electronics Co., Ltd. Image sensor

Also Published As

Publication number Publication date
US9437426B2 (en) 2016-09-06
KR20140118711A (ko) 2014-10-08
TWI578384B (zh) 2017-04-11
TW201505078A (zh) 2015-02-01
JP2014192485A (ja) 2014-10-06
US20140295648A1 (en) 2014-10-02

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