KR101513406B1 - 적외선 감지 및 표시를 위한 방법 및 장치 - Google Patents

적외선 감지 및 표시를 위한 방법 및 장치 Download PDF

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KR101513406B1
KR101513406B1 KR1020147005504A KR20147005504A KR101513406B1 KR 101513406 B1 KR101513406 B1 KR 101513406B1 KR 1020147005504 A KR1020147005504 A KR 1020147005504A KR 20147005504 A KR20147005504 A KR 20147005504A KR 101513406 B1 KR101513406 B1 KR 101513406B1
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layer
infrared
light emitting
electrode
oled
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KR20140037973A (ko
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프랭키 소
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유니버시티 오브 플로리다 리서치 파운데이션, 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/155—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroluminescent Light Sources (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
KR1020147005504A 2006-09-29 2007-10-01 적외선 감지 및 표시를 위한 방법 및 장치 Expired - Fee Related KR101513406B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US84858106P 2006-09-29 2006-09-29
US60/848,581 2006-09-29
US93022507P 2007-05-14 2007-05-14
US60/930,225 2007-05-14
PCT/US2007/080104 WO2008042859A2 (en) 2006-09-29 2007-10-01 Method and apparatus for infrared detection and display

Related Parent Applications (1)

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KR1020097008875A Division KR101513311B1 (ko) 2006-09-29 2007-10-01 적외선 감지 및 표시를 위한 방법 및 장치

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Publication Number Publication Date
KR20140037973A KR20140037973A (ko) 2014-03-27
KR101513406B1 true KR101513406B1 (ko) 2015-04-17

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KR1020097008875A Expired - Fee Related KR101513311B1 (ko) 2006-09-29 2007-10-01 적외선 감지 및 표시를 위한 방법 및 장치

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US (4) US10700141B2 (enExample)
EP (1) EP2064746A2 (enExample)
JP (1) JP5568305B2 (enExample)
KR (2) KR101513406B1 (enExample)
CN (1) CN101558348B (enExample)
CA (1) CA2665047A1 (enExample)
SG (1) SG175565A1 (enExample)
WO (1) WO2008042859A2 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101513406B1 (ko) 2006-09-29 2015-04-17 유니버시티 오브 플로리다 리서치 파운데이션, 인크. 적외선 감지 및 표시를 위한 방법 및 장치
JP5364526B2 (ja) * 2009-10-02 2013-12-11 三菱重工業株式会社 赤外線検出素子、赤外線検出装置及び赤外線検出素子の製造方法
EP2504675A4 (en) * 2009-11-24 2016-08-17 Univ Florida METHOD AND DEVICE FOR DETECTING AN INFRARED RADIATION
CA2800549A1 (en) * 2010-05-24 2011-12-01 University Of Florida Research Foundation, Inc. Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
CN103180968A (zh) * 2010-08-18 2013-06-26 班大燕 具备波长转换功能的有机/无机混合光学放大器
CA2818741A1 (en) * 2010-11-23 2012-05-31 University Of Florida Research Foundation, Inc. Ir photodetectors with high detectivity at low drive voltage
KR101221389B1 (ko) * 2011-02-16 2013-01-11 경희대학교 산학협력단 유기발광다이오드 및 그 제조방법
CA2828304A1 (en) * 2011-02-28 2012-09-07 University Of Florida Research Foundation, Inc. Infrared pass visible blocker for upconversion devices
CN105742395B (zh) * 2011-02-28 2019-02-15 佛罗里达大学研究基金会有限公司 带有增益(ec)的上转换器件和光检测器
CA2828305A1 (en) * 2011-02-28 2012-09-07 University Of Florida Research Foundation, Inc. Up-conversion devices with a broad band absorber
KR101829777B1 (ko) * 2011-03-09 2018-02-20 삼성디스플레이 주식회사 광 감지 센서
AU2012275060A1 (en) * 2011-06-30 2014-01-30 Nanoholdings, Llc A method and apparatus for detecting infrared radiation with gain
WO2013044200A1 (en) * 2011-09-23 2013-03-28 University Of Florida Research Foundation, Inc. Infrared driven oled display
US8941203B2 (en) * 2012-03-01 2015-01-27 Raytheon Company Photodetector with surface plasmon resonance
US8765338B2 (en) * 2012-08-02 2014-07-01 Brother International Corporation Quantum dot photoconductor for an electrophotographic printer
WO2014024582A1 (ja) * 2012-08-09 2014-02-13 ソニー株式会社 受発光素子及び受発光装置
DE102012222463A1 (de) * 2012-12-06 2014-06-12 Osram Opto Semiconductors Gmbh Organisches optoelektronisches Bauelement mit Infrarot-Detektor
KR102012228B1 (ko) * 2012-12-27 2019-08-21 에스케이이노베이션 주식회사 양자점 기반 태양전지 및 이의 제조방법
CN103165727B (zh) * 2013-03-15 2016-03-09 中国科学院半导体研究所 N型注入的红外至可见波长上转换装置及其制备方法
CN103178076A (zh) * 2013-04-07 2013-06-26 云南大学 红外光与可见光转换器件
KR20160078954A (ko) * 2013-08-29 2016-07-05 유니버시티 오브 플로리다 리서치 파운데이션, 아이엔씨. 용액-처리된 무기 반도체로부터의 공기 안정성 적외선 광검출기
EP3055658B1 (en) 2013-10-10 2021-12-08 Kivanc Azgin Infrared detector based on mechanical vibrations
GB2523841A (en) * 2014-03-07 2015-09-09 Melexis Technologies Nv Infrared sensor module
KR101629376B1 (ko) * 2014-09-25 2016-06-13 실리콘 디스플레이 (주) 평판형 이미지 센서
US10680194B2 (en) * 2015-01-12 2020-06-09 Massachusetts Institute Of Technology Transparent luminescent displays enabled by electric-field-induced quenching of photoluminescent pixels
US10360585B2 (en) * 2015-05-13 2019-07-23 Brainfall.com, Inc. Modification of advertising campaigns based on virality
EP3308113A4 (en) 2015-06-11 2019-03-20 University of Florida Research Foundation, Incorporated MONODISPERSES, IR ABSORBENT NANOPARTICLES AND RELATED METHODS AND DEVICES
US9866769B2 (en) * 2016-03-28 2018-01-09 Charles Mingus, III Nano-imaging device and systems and methods for implementing and using same
CN107275484A (zh) * 2016-04-07 2017-10-20 中国科学院苏州纳米技术与纳米仿生研究所 一种近红外探测器及其制备方法
WO2019019661A1 (zh) * 2017-07-26 2019-01-31 Tcl集团股份有限公司 光转换的器件及其制备方法、红外成像设备
EP3790918A4 (en) 2018-05-05 2022-03-16 Jason D. Azoulay OPEN LAYER CONJUGATED POLYMERIC CONDUCTORS, COMPOSITES, AND COMPOSITIONS
EP3853288A4 (en) 2018-09-21 2022-07-27 Joshua Tropp THIOL-BASED POST MODIFICATION OF CONJUGATED POLYMERS
CN109713134A (zh) * 2019-01-08 2019-05-03 长春工业大学 一种掺杂PbSe量子点的光敏聚合物有源层薄膜制备方法
CN109904276B (zh) * 2019-01-31 2021-01-26 中国科学院长春光学精密机械与物理研究所 一种GaN基垂直集成光电子芯片及其制备方法
US11781986B2 (en) 2019-12-31 2023-10-10 University Of Southern Mississippi Methods for detecting analytes using conjugated polymers and the inner filter effect
US11550140B2 (en) 2020-05-06 2023-01-10 L3Harris Technologies, Inc. Backside etch process for transparent silicon oxide technology
CN111740018B (zh) * 2020-07-07 2022-08-09 吉林大学 一种级联结构有机光电探测器及其制备方法
EP4006994A1 (en) * 2020-11-26 2022-06-01 Stmicroelectronics (Grenoble 2) Sas Optoelectronic device
CN112490265B (zh) * 2020-11-27 2022-08-02 电子科技大学 一种上转换低开启电压红外探测-发光器件及其制备方法
CN112284530A (zh) * 2020-12-03 2021-01-29 南京迪钛飞光电科技有限公司 一种探测成像传感器
CN113097331A (zh) * 2021-02-24 2021-07-09 重庆科技学院 基于石墨烯和量子点的红外探测器
EP4102572A3 (en) 2021-04-23 2023-04-05 Samsung Electronics Co., Ltd. Sensor-embedded display panel and electronic device
CN113471391B (zh) * 2021-07-05 2024-03-12 东南大学 用于冠状病毒检测量子点发光场效应晶体管及制备方法
US12487342B2 (en) 2022-05-17 2025-12-02 Stmicroelectronics (Research & Development) Limited Quantum film direct time of flight sensor circuit for low cost short wave infrared operation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005101530A1 (en) * 2004-04-19 2005-10-27 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals

Family Cites Families (218)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139976A (en) * 1981-02-23 1982-08-30 Omron Tateisi Electronics Co Light emitting/receiving device
JPS58215081A (ja) 1982-06-08 1983-12-14 Mitsui Toatsu Chem Inc アモルフアスシリコン太陽電池
EP0106514B1 (en) * 1982-09-23 1989-03-15 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Infrared detectors
JPS6030163A (ja) 1983-07-28 1985-02-15 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池モジユ−ル
JPS61149831A (ja) 1984-12-24 1986-07-08 Matsushita Electric Works Ltd 赤外線検知装置
US4778692A (en) * 1985-02-20 1988-10-18 Canon Kabushiki Kaisha Process for forming deposited film
EP0219711A1 (de) 1985-10-08 1987-04-29 Heimann GmbH Infrarotdetektor
JPH0797657B2 (ja) 1986-10-01 1995-10-18 株式会社小松製作所 光メモリ
US4885211A (en) 1987-02-11 1989-12-05 Eastman Kodak Company Electroluminescent device with improved cathode
JPS6412583A (en) 1987-07-07 1989-01-17 Toshiba Corp Photodetector
JPH0216421A (ja) 1988-07-04 1990-01-19 Matsushita Electric Ind Co Ltd 光検出器
JP2717583B2 (ja) 1988-11-04 1998-02-18 キヤノン株式会社 積層型光起電力素子
JPH0379693A (ja) 1989-04-28 1991-04-04 Quantex Corp 光学的アップコンバーションのための高性能光ルミネセント材料及びそれを作る方法
US5122905A (en) 1989-06-20 1992-06-16 The Dow Chemical Company Relective polymeric body
US5121398A (en) * 1989-09-26 1992-06-09 Excel Technology, Inc. Broadly tunable, high repetition rate solid state lasers and uses thereof
US5315129A (en) * 1990-08-20 1994-05-24 University Of Southern California Organic optoelectronic devices and methods
JPH087096B2 (ja) 1990-11-30 1996-01-29 防衛庁技術研究本部長 赤外検知装置
SE468188B (sv) 1991-04-08 1992-11-16 Stiftelsen Inst Foer Mikroelek Metod foer inkoppling av straalning i en infraroeddetektor, jaemte anordning
US5270092A (en) 1991-08-08 1993-12-14 The Regents, University Of California Gas filled panel insulation
JPH05186702A (ja) 1992-01-13 1993-07-27 Fuji Xerox Co Ltd ジハロゲン化スズフタロシアニンとハロゲン化ガリウムフタロシアニンとの混合結晶およびそれを用いた電子写真感光体
CA2095666A1 (en) 1992-05-08 1993-11-09 Junichi Ohwaki Infrared-to-visible up-conversion material
JPH06326350A (ja) 1993-05-12 1994-11-25 Nichia Chem Ind Ltd 赤外可視変換素子
JP3405608B2 (ja) * 1993-09-17 2003-05-12 株式会社東芝 有機ｅｌ素子
JPH07122762A (ja) 1993-10-22 1995-05-12 Asahi Chem Ind Co Ltd 薄膜光起電力装置
US5389788A (en) * 1993-12-13 1995-02-14 Hughes Aircraft Company Infrared transducer and goggles incorporating the same
JPH087096A (ja) 1994-06-20 1996-01-12 Fujitsu General Ltd 動画認識システム
FR2729757A1 (fr) 1995-01-20 1996-07-26 Sofradir Dispositif de detection d'ondes electromagnetiques, et notamment de rayonnements infra-rouges
US5710428A (en) * 1995-08-10 1998-01-20 Samsung Electronics Co., Ltd. Infrared focal plane array detecting apparatus having light emitting devices and infrared camera adopting the same
US5811834A (en) 1996-01-29 1998-09-22 Toyo Ink Manufacturing Co., Ltd. Light-emitting material for organo-electroluminescence device and organo-electroluminescence device for which the light-emitting material is adapted
JPH1065200A (ja) 1996-08-15 1998-03-06 Yokogawa Electric Corp 赤外受光素子
US6211529B1 (en) 1996-08-27 2001-04-03 California Institute Of Technology Infrared radiation-detecting device
US5853497A (en) 1996-12-12 1998-12-29 Hughes Electronics Corporation High efficiency multi-junction solar cells
JPH10242493A (ja) 1997-02-28 1998-09-11 Mitsubishi Heavy Ind Ltd 太陽電池
US6337492B1 (en) 1997-07-11 2002-01-08 Emagin Corporation Serially-connected organic light emitting diode stack having conductors sandwiching each light emitting layer
WO1999039394A1 (en) * 1998-02-02 1999-08-05 Uniax Corporation X-y addressable electric microswitch arrays and sensor matrices employing them
US5965875A (en) 1998-04-24 1999-10-12 Foveon, Inc. Color separation in an active pixel cell imaging array using a triple-well structure
JPH11329736A (ja) 1998-05-20 1999-11-30 Futaba Corp 光変調鏡
CN1237626C (zh) 1998-08-19 2006-01-18 普林斯顿大学理事会 有机光敏光电器件
US6097147A (en) 1998-09-14 2000-08-01 The Trustees Of Princeton University Structure for high efficiency electroluminescent device
US6140646A (en) 1998-12-17 2000-10-31 Sarnoff Corporation Direct view infrared MEMS structure
JP2000277265A (ja) 1999-03-25 2000-10-06 Agency Of Ind Science & Technol 有機空間光変調素子
JP2000349365A (ja) 1999-06-07 2000-12-15 Futaba Corp 光電流増倍素子
JP2001006876A (ja) 1999-06-25 2001-01-12 Futaba Corp 光−光変換素子
JP4107354B2 (ja) 1999-07-15 2008-06-25 独立行政法人科学技術振興機構 ミリ波・遠赤外光検出器
US6512385B1 (en) 1999-07-26 2003-01-28 Paul Pfaff Method for testing a device under test including the interference of two beams
JP3950594B2 (ja) 1999-09-03 2007-08-01 ローム株式会社 表示装置
US6509574B2 (en) * 1999-12-02 2003-01-21 Texas Instruments Incorporated Optocouplers having integrated organic light-emitting diodes
US20020066904A1 (en) * 1999-12-03 2002-06-06 Han-Tzong Yuan Solid-state relay having integrated organic light-emitting diodes
AUPQ897600A0 (en) * 2000-07-25 2000-08-17 Liddiard, Kevin Active or self-biasing micro-bolometer infrared detector
US6579629B1 (en) 2000-08-11 2003-06-17 Eastman Kodak Company Cathode layer in organic light-emitting diode devices
GB0024804D0 (en) 2000-10-10 2000-11-22 Microemissive Displays Ltd An optoelectronic device
US6828045B1 (en) 2003-06-13 2004-12-07 Idemitsu Kosan Co., Ltd. Organic electroluminescence element and production method thereof
DE10101995A1 (de) * 2001-01-18 2002-07-25 Philips Corp Intellectual Pty Schaltungsanordnung und Verfahren zum Schützen mindestens einer Chipanordnung vor Manipulation und/oder vor Mißbrauch
JP2002340668A (ja) 2001-05-18 2002-11-27 Denso Corp サーモパイル式赤外線センサおよびその検査方法
WO2002099896A1 (en) 2001-06-05 2002-12-12 State University Of New York Infrared radiation imager
JP2003083809A (ja) 2001-09-10 2003-03-19 Hamamatsu Photonics Kk 赤外可視変換部材及び赤外線検出装置。
US20030052365A1 (en) 2001-09-18 2003-03-20 Samir Chaudhry Structure and fabrication method for capacitors integratible with vertical replacement gate transistors
US7348946B2 (en) 2001-12-31 2008-03-25 Intel Corporation Energy sensing light emitting diode display
US7436038B2 (en) 2002-02-05 2008-10-14 E-Phocus, Inc Visible/near infrared image sensor array
US7378124B2 (en) * 2002-03-01 2008-05-27 John James Daniels Organic and inorganic light active devices and methods for making the same
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
EP1493308A4 (en) 2002-03-29 2009-09-16 Massachusetts Inst Technology ELECTROLUMINESCENT DEVICE COMPRISING SEMICONDUCTOR NANOCRYSTALS
US6951694B2 (en) 2002-03-29 2005-10-04 The University Of Southern California Organic light emitting devices with electron blocking layers
EP1367659B1 (en) 2002-05-21 2012-09-05 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor
TWI272874B (en) 2002-08-09 2007-02-01 Semiconductor Energy Lab Organic electroluminescent device
US20040031965A1 (en) * 2002-08-16 2004-02-19 Forrest Stephen R. Organic photonic integrated circuit using an organic photodetector and a transparent organic light emitting device
US20050126628A1 (en) 2002-09-05 2005-06-16 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7119359B2 (en) 2002-12-05 2006-10-10 Research Foundation Of The City University Of New York Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures
US8222072B2 (en) * 2002-12-20 2012-07-17 The Trustees Of Princeton University Methods of fabricating devices by low pressure cold welding
US7052351B2 (en) 2002-12-31 2006-05-30 Eastman Kodak Company Using hole- or electron-blocking layers in color OLEDS
JP2003178887A (ja) 2003-01-06 2003-06-27 Canon Inc 電界発光素子用電極材料の選択方法
EP1447860A1 (en) 2003-02-17 2004-08-18 Rijksuniversiteit Groningen Organic material photodiode
US6869699B2 (en) 2003-03-18 2005-03-22 Eastman Kodak Company P-type materials and mixtures for electronic devices
US7727693B2 (en) 2003-04-24 2010-06-01 Sharp Kabushiki Kaisha Electrophotographic photoreceptor, electrophotographic image forming method, and electrophotographic apparatus
US20040222306A1 (en) 2003-05-08 2004-11-11 Anthony Fajarillo Methods, systems and apparatus for displaying bonsai trees
US6914315B2 (en) 2003-05-28 2005-07-05 Vtera Technology Inc. GaN-based heterostructure photodiode
KR101118810B1 (ko) 2003-06-12 2012-03-20 시리카 코포레이션 자유 캐리어의 정상 상태 비평형 분포 및 이를 이용한 광자에너지 상승 변환
US7053412B2 (en) 2003-06-27 2006-05-30 The Trustees Of Princeton University And Universal Display Corporation Grey scale bistable display
US7148463B2 (en) 2003-07-16 2006-12-12 Triquint Semiconductor, Inc. Increased responsivity photodetector
US6906326B2 (en) 2003-07-25 2005-06-14 Bae Systems Information And Elecronic Systems Integration Inc. Quantum dot infrared photodetector focal plane array
US7381953B1 (en) * 2003-07-25 2008-06-03 Public Service Solutions, Inc. Infrared imaging device
WO2005017973A2 (en) 2003-08-18 2005-02-24 Nanosource, Inc. Semiconductor avalanche photodetector with vacuum or gaseous gap electron acceleration region
EP1513171A1 (en) 2003-09-05 2005-03-09 Sony International (Europe) GmbH Tandem dye-sensitised solar cell and method of its production
US6881502B2 (en) 2003-09-24 2005-04-19 Eastman Kodak Company Blue organic electroluminescent devices having a non-hole-blocking layer
US8884845B2 (en) * 2003-10-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Display device and telecommunication system
WO2005050164A2 (en) 2003-11-13 2005-06-02 Georgia Tech Research Corporation Detection systems and methods
US6972431B2 (en) 2003-11-26 2005-12-06 Trustees Of Princeton University Multilayer organic photodetectors with improved performance
US7125635B2 (en) 2003-12-23 2006-10-24 Xerox Corporation Imaging members
CA2551123A1 (en) 2004-01-20 2005-07-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
US6943425B2 (en) 2004-01-23 2005-09-13 Intevac, Inc. Wavelength extension for backthinned silicon image arrays
GB0401578D0 (en) 2004-01-24 2004-02-25 Koninkl Philips Electronics Nv Phototransistor
US7151339B2 (en) 2004-01-30 2006-12-19 Universal Display Corporation OLED efficiency by utilization of different doping concentrations within the device emissive layer
JP2005266537A (ja) 2004-03-19 2005-09-29 Stanley Electric Co Ltd 赤外線透過フィルタ及び該赤外線透過フィルタを具備する赤外線投光器
JP2005277113A (ja) 2004-03-25 2005-10-06 Sanyo Electric Co Ltd 積層型太陽電池モジュール
US7773139B2 (en) 2004-04-16 2010-08-10 Apple Inc. Image sensor with photosensitive thin film transistors
US7773404B2 (en) 2005-01-07 2010-08-10 Invisage Technologies, Inc. Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
JP2006013103A (ja) 2004-06-25 2006-01-12 Sony Corp 有機電界発光素子
US20060014044A1 (en) 2004-07-14 2006-01-19 Au Optronics Corporation Organic light-emitting display with multiple light-emitting modules
US7300731B2 (en) 2004-08-10 2007-11-27 E.I. Du Pont De Nemours And Company Spatially-doped charge transport layers
KR20060018583A (ko) 2004-08-25 2006-03-02 삼성전자주식회사 반도체 나노결정을 함유하는 백색 발광 유·무기하이브리드 전기 발광 소자
US8026510B2 (en) 2004-10-20 2011-09-27 Dai Nippon Printing Co., Ltd. Organic electronic device and method for producing the same
JP2006128437A (ja) 2004-10-29 2006-05-18 Sony Corp 有機電界発光素子および表示装置
KR100678291B1 (ko) * 2004-11-11 2007-02-02 삼성전자주식회사 나노입자를 이용한 수광소자
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7279705B2 (en) 2005-01-14 2007-10-09 Au Optronics Corp. Organic light-emitting device
TWI278252B (en) 2005-04-04 2007-04-01 Au Optronics Corp Organic light-emitting display device
US20060157806A1 (en) 2005-01-18 2006-07-20 Omnivision Technologies, Inc. Multilayered semiconductor susbtrate and image sensor formed thereon for improved infrared response
US7811479B2 (en) 2005-02-07 2010-10-12 The Trustees Of The University Of Pennsylvania Polymer-nanocrystal quantum dot composites and optoelectronic devices
US8115093B2 (en) 2005-02-15 2012-02-14 General Electric Company Layer-to-layer interconnects for photoelectric devices and methods of fabricating the same
KR100624307B1 (ko) 2005-02-23 2006-09-19 제일모직주식회사 표시장치용 저반사율의 휘도 향상 다층 광학필름 및 이를이용한 유기발광다이오드 표시장치
JP4839632B2 (ja) 2005-02-25 2011-12-21 ソニー株式会社 撮像装置
US7208738B2 (en) 2005-02-28 2007-04-24 Sundar Natarajan Yoganandan Light source utilizing an infrared sensor to maintain brightness and color of an LED device
KR20070110049A (ko) 2005-03-04 2007-11-15 마츠시다 덴코 가부시키가이샤 적층형 유기태양전지
JP4567495B2 (ja) 2005-03-11 2010-10-20 株式会社リコー 光波長変換素子
TWI305431B (en) * 2005-04-06 2009-01-11 Au Optronics Corp Organic light emitting diode display
ES2297972A1 (es) * 2005-05-30 2008-05-01 Universidad Politecnica De Madrid Fotodetector de infrarrojos de banda intermedia y puntos cuanticos.
WO2006130717A2 (en) 2005-06-02 2006-12-07 The Regents Of The University Of California Effective organic solar cells based on triplet materials
US20090115310A1 (en) 2005-06-06 2009-05-07 Sharp Kabushiki Kaisha Coating liquid for hole injection and transport layer, production method of hole injection and transport layer, organic electroluminescent element, and production method thereof
US7696682B2 (en) 2005-06-27 2010-04-13 Samsung Electronics Co., Ltd. Organic light emitting device using Mg—Ag thin film and manufacturing method thereof
US7247850B2 (en) * 2005-08-05 2007-07-24 Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of National Defence Of Her Majesty's Canadian Government Infrared imager
WO2007017475A1 (de) 2005-08-08 2007-02-15 Siemens Aktiengesellschaft Organischer photodetektor mit erhöhter empfindlichkeit, sowie verwendung eines triarylmin-fluoren-polymers als zwischenschicht in einem photodetektor
DE102005037290A1 (de) 2005-08-08 2007-02-22 Siemens Ag Flachbilddetektor
KR100720100B1 (ko) 2005-08-23 2007-05-18 한양대학교 산학협력단 다중 이종 헤테로 구조의 정공속박층을 가지는유기발광소자 및 그 제조방법
JP2009509129A (ja) 2005-08-25 2009-03-05 エドワード・サージェント 高利得及び高感度の量子ドット光学デバイス及びその作製方法
CN100424897C (zh) 2005-09-28 2008-10-08 中国科学院上海技术物理研究所 氮化镓基红外-可见波长转换探测器
KR100691567B1 (ko) 2005-10-18 2007-03-09 신코엠 주식회사 유기 전계 발광다이오드 디스플레이 패널의 구동회로 및이를 이용한 디스차아지 방법
US7947897B2 (en) 2005-11-02 2011-05-24 The Trustees Of Princeton University Organic photovoltaic cells utilizing ultrathin sensitizing layer
US8013240B2 (en) 2005-11-02 2011-09-06 The Trustees Of Princeton University Organic photovoltaic cells utilizing ultrathin sensitizing layer
US8021763B2 (en) 2005-11-23 2011-09-20 The Trustees Of Princeton University Phosphorescent OLED with interlayer
KR101383126B1 (ko) 2005-12-05 2014-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유기금속 착체, 및 이를 사용하는 발광 소자, 발광 장치 및전자 기기
US7414294B2 (en) 2005-12-16 2008-08-19 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix
DE602006001930D1 (de) 2005-12-23 2008-09-04 Novaled Ag tur von organischen Schichten
JP2009524832A (ja) * 2006-01-24 2009-07-02 ライフ テクノロジーズ コーポレーション 検体を定量するためのデバイスおよび方法
KR101288304B1 (ko) 2006-01-27 2013-07-18 삼성디스플레이 주식회사 유기 발광 화합물 및 이를 구비한 유기 발광 소자
US8003979B2 (en) 2006-02-10 2011-08-23 The Research Foundation Of State University Of New York High density coupling of quantum dots to carbon nanotube surface for efficient photodetection
JP2009527108A (ja) 2006-02-13 2009-07-23 ソレクサント・コーポレイション ナノ構造層を備える光起電装置
JP2009527876A (ja) 2006-02-17 2009-07-30 ソレクサント・コーポレイション ナノ構造のエレクトロルミネセンスデバイス及びディスプレイ
BRPI0708720A2 (pt) 2006-03-02 2011-06-07 Compound Photonics dispositivo óptico; e método para a produção de um dispositivo óptico de múltiplas camadas
WO2007099880A1 (en) 2006-03-03 2007-09-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting material, light emitting element, light emitting device and electronic device
CA2644629A1 (en) 2006-03-23 2008-05-08 Solexant Corporation Photovoltaic device containing nanoparticle sensitized carbon nanotubes
US8247801B2 (en) * 2006-03-31 2012-08-21 Imec Organic semi-conductor photo-detecting device
WO2007131126A2 (en) 2006-05-03 2007-11-15 Rochester Institute Of Technology Multi-junction, photovoltaic devices with nanostructured spectral enhancements and methods thereof
US7928317B2 (en) * 2006-06-05 2011-04-19 Translucent, Inc. Thin film solar cell
JP2008016831A (ja) 2006-06-09 2008-01-24 Sumitomo Chemical Co Ltd 光−光変換デバイス
WO2008105792A2 (en) 2006-06-24 2008-09-04 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions
TWI312531B (en) 2006-06-30 2009-07-21 Nat Taiwan Universit Photoelectric device and fabrication method thereof
US7955889B1 (en) 2006-07-11 2011-06-07 The Trustees Of Princeton University Organic photosensitive cells grown on rough electrode with nano-scale morphology control
KR101513406B1 (ko) 2006-09-29 2015-04-17 유니버시티 오브 플로리다 리서치 파운데이션, 인크. 적외선 감지 및 표시를 위한 방법 및 장치
US8080824B2 (en) 2006-11-15 2011-12-20 Academia Sinica Suppressing recombination in an electronic device
US20080142075A1 (en) 2006-12-06 2008-06-19 Solexant Corporation Nanophotovoltaic Device with Improved Quantum Efficiency
US7799990B2 (en) 2007-03-12 2010-09-21 Northwestern University Electron-blocking layer / hole-transport layer for organic photovoltaics and applications of same
US20100044676A1 (en) 2008-04-18 2010-02-25 Invisage Technologies, Inc. Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals
EP2432015A1 (en) 2007-04-18 2012-03-21 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
US8586933B2 (en) 2007-04-25 2013-11-19 Koninklijke Philips N.V. Radiation detector having a split laminate optical coupling
WO2009002551A1 (en) 2007-06-26 2008-12-31 Qd Vision, Inc. Photovoltaic devices including quantum dot down-conversion materials useful for solar cells and materials including quantum dots
KR100838088B1 (ko) 2007-07-03 2008-06-16 삼성에스디아이 주식회사 유기 발광 소자
KR101479803B1 (ko) 2007-07-23 2015-01-06 바스프 에스이 광전 탠덤 전지
DE102007043648A1 (de) 2007-09-13 2009-03-19 Siemens Ag Organischer Photodetektor zur Detektion infraroter Strahlung, Verfahren zur Herstellung dazu und Verwendung
CN102308393A (zh) 2007-12-13 2012-01-04 泰克尼昂研究开发基金有限公司 包含第ⅳ-ⅵ族半导体核-壳纳米晶的光伏电池
US8552358B2 (en) 2007-12-18 2013-10-08 Marek T. Michalewicz Quantum tunneling photodetector array including electrode nano wires
JP5162271B2 (ja) 2008-02-15 2013-03-13 Ａｇｃテクノグラス株式会社 光学多層膜付きガラス部材とその製造方法
KR20090089073A (ko) 2008-02-18 2009-08-21 삼성모바일디스플레이주식회사 실란일아민계 화합물 및 이를 포함한 유기막을 구비한 유기발광 소자
US20090208776A1 (en) 2008-02-19 2009-08-20 General Electric Company Organic optoelectronic device and method for manufacturing the same
US20090214967A1 (en) 2008-02-26 2009-08-27 Fuji Xerox Co., Ltd. Electrophotographic photoreceptor, and image forming apparatus and process cartridge using the same
US20090217967A1 (en) 2008-02-29 2009-09-03 International Business Machines Corporation Porous silicon quantum dot photodetector
JP5108806B2 (ja) 2008-03-07 2012-12-26 富士フイルム株式会社 光電変換素子及び撮像素子
EP2259377B1 (en) 2008-03-19 2020-06-03 Sharp Kabushiki Kaisha Solar cell
KR101995371B1 (ko) 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 양자점들을 포함하는 발광 소자
JP4533939B2 (ja) 2008-04-10 2010-09-01 三菱重工業株式会社 赤外線検出素子、赤外線検出装置及び赤外線検出素子の製造方法
US7821807B2 (en) 2008-04-17 2010-10-26 Epir Technologies, Inc. Nonequilibrium photodetectors with single carrier species barriers
JP2009272528A (ja) 2008-05-09 2009-11-19 Fujifilm Corp 光電変換素子，光電変換素子の製造方法及び固体撮像素子
US8362517B2 (en) 2008-06-11 2013-01-29 Plextronics, Inc. Encapsulation for organic optoelectronic devices
JP5258037B2 (ja) 2008-09-08 2013-08-07 国立大学法人京都大学 光電変換素子、その製造方法、及び太陽電池
US20100059097A1 (en) 2008-09-08 2010-03-11 Mcdonald Mark Bifacial multijunction solar cell
JP2010067802A (ja) 2008-09-11 2010-03-25 Seiko Epson Corp 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP2010087205A (ja) 2008-09-30 2010-04-15 Kaneka Corp 多接合型薄膜光電変換装置
CN104377308B (zh) 2008-10-28 2019-08-06 密执安州立大学董事会 具有单独的红色、绿色和蓝色子元件的堆叠式白色oled
TWI407610B (zh) 2008-11-28 2013-09-01 Univ Nat Chiao Tung Infrared light distance sensing device for organic semiconductors
KR101584990B1 (ko) 2008-12-01 2016-01-13 엘지디스플레이 주식회사 백색 유기 발광 소자 및 이의 제조 방법
US7968215B2 (en) 2008-12-09 2011-06-28 Global Oled Technology Llc OLED device with cyclobutene electron injection materials
EP2380221A2 (en) 2008-12-19 2011-10-26 Philips Intellectual Property & Standards GmbH Transparent organic light emitting diode
KR20200142125A (ko) 2009-01-12 2020-12-21 더 리젠츠 오브 더 유니버시티 오브 미시간 전자/정공 차단 층 및 엑시톤 차단 층을 사용하는 유기 광기전력 전지 개방 회로 전압의 강화
US8563850B2 (en) 2009-03-16 2013-10-22 Stion Corporation Tandem photovoltaic cell and method using three glass substrate configuration
DE102009018647A1 (de) 2009-04-23 2010-10-28 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
JP2010263030A (ja) 2009-05-01 2010-11-18 Japan Advanced Institute Of Science & Technology Hokuriku 有機ｅｌ素子
TWI380490B (en) 2009-05-05 2012-12-21 Univ Nat Chiao Tung Organic photosensitive photoelectric device
GB2470006B (en) 2009-05-05 2012-05-23 Cambridge Display Tech Ltd Device and method of forming a device
GB0909818D0 (en) 2009-06-08 2009-07-22 Isis Innovation Device
WO2010142575A2 (en) 2009-06-11 2010-12-16 Oerlikon Solar Ag, Trübbach Tandem solar cell integrated in a double insulating glass window for building integrated photovoltaic applications
JP2011098948A (ja) 2009-06-25 2011-05-19 Yamagata Promotional Organization For Industrial Technology ビピリジン誘導体及びそれを含む有機エレクトロルミネッセンス素子
US9496315B2 (en) 2009-08-26 2016-11-15 Universal Display Corporation Top-gate bottom-contact organic transistor
WO2011033974A1 (ja) 2009-09-18 2011-03-24 コニカミノルタホールディングス株式会社 タンデム型有機光電変換素子、および太陽電池
JP2011065927A (ja) 2009-09-18 2011-03-31 Toshiba Corp 発光装置
US9054262B2 (en) 2009-09-29 2015-06-09 Research Triangle Institute Integrated optical upconversion devices and related methods
US20110073835A1 (en) 2009-09-29 2011-03-31 Xiaofan Ren Semiconductor nanocrystal film
US8742398B2 (en) 2009-09-29 2014-06-03 Research Triangle Institute, Int'l. Quantum dot-fullerene junction based photodetectors
KR101608903B1 (ko) 2009-11-16 2016-04-20 삼성전자주식회사 적외선 이미지 센서
EP2504675A4 (en) 2009-11-24 2016-08-17 Univ Florida METHOD AND DEVICE FOR DETECTING AN INFRARED RADIATION
CN101794834B (zh) 2009-12-14 2013-06-12 湖南共创光伏科技有限公司 设有上转换荧光材料膜层的高效太阳能薄膜电池及其膜层制备方法
CA2800549A1 (en) 2010-05-24 2011-12-01 University Of Florida Research Foundation, Inc. Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
CN101872793B (zh) 2010-07-02 2013-06-05 福建钧石能源有限公司 叠层太阳能电池及其制造方法
CN103180968A (zh) 2010-08-18 2013-06-26 班大燕 具备波长转换功能的有机/无机混合光学放大器
CA2818741A1 (en) 2010-11-23 2012-05-31 University Of Florida Research Foundation, Inc. Ir photodetectors with high detectivity at low drive voltage
WO2012071107A1 (en) 2010-11-23 2012-05-31 Qd Vision, Inc. Device including semiconductor nanocrystals & method
KR101890748B1 (ko) 2011-02-01 2018-08-23 삼성전자주식회사 멀티 스택 씨모스(ｃｍｏｓ) 이미지 센서의 화소 및 그 제조방법
CA2828305A1 (en) 2011-02-28 2012-09-07 University Of Florida Research Foundation, Inc. Up-conversion devices with a broad band absorber
CN105742395B (zh) 2011-02-28 2019-02-15 佛罗里达大学研究基金会有限公司 带有增益(ec)的上转换器件和光检测器
AU2012240386A1 (en) 2011-04-05 2013-11-07 Nanoholdings, Llc Method and apparatus for integrating an infrared (IR) photovoltaic cell on a thin film photovoltaic cell
KR102031996B1 (ko) 2011-06-06 2019-10-14 유니버시티 오브 플로리다 리서치 파운데이션, 인코포레이티드 Cmos 이미지 센서를 갖는 ir 업 컨버전 디바이스를 집적한 적외선 이미징 디바이스
BR112013031160A2 (pt) 2011-06-06 2017-02-07 Nanoholdings Llc dispositivo de conversão de infravermelho para visível transparente
WO2012168192A2 (en) 2011-06-07 2012-12-13 Bayer Intellectual Property Gmbh Synthesis of highly fluorescing semiconducting core-shell nanoparticles based on ib, iib, iiia, via elements of the periodic classification.
WO2012178071A2 (en) 2011-06-23 2012-12-27 Brown University Device and methods for temperature and humidity measurements using a nanocomposite film sensor
AU2012275060A1 (en) 2011-06-30 2014-01-30 Nanoholdings, Llc A method and apparatus for detecting infrared radiation with gain
JP5853486B2 (ja) 2011-08-18 2016-02-09 ソニー株式会社 撮像装置および撮像表示システム
EP2599898A1 (en) 2011-12-01 2013-06-05 Bayer Intellectual Property GmbH Continuous synthesis of high quantum yield InP/ZnS nanocrystals
EP2948984A4 (en) 2013-01-25 2016-08-24 Univ Florida Novel IR IMAGE SENSOR WITH A SOLUTION-PROCESSED PBS LIGHT DETECTOR
WO2015081005A1 (en) 2013-11-27 2015-06-04 Massachusetts Institute Of Technology Nanocrystal synthesis
EP3308113A4 (en) 2015-06-11 2019-03-20 University of Florida Research Foundation, Incorporated MONODISPERSES, IR ABSORBENT NANOPARTICLES AND RELATED METHODS AND DEVICES

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005101530A1 (en) * 2004-04-19 2005-10-27 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals

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US10700141B2 (en) 2020-06-30
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US8304728B2 (en) 2012-11-06
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