WO2013044200A1 - Infrared driven oled display - Google Patents

Infrared driven oled display Download PDF

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Publication number
WO2013044200A1
WO2013044200A1 PCT/US2012/056814 US2012056814W WO2013044200A1 WO 2013044200 A1 WO2013044200 A1 WO 2013044200A1 US 2012056814 W US2012056814 W US 2012056814W WO 2013044200 A1 WO2013044200 A1 WO 2013044200A1
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WIPO (PCT)
Prior art keywords
panel
iroled
amoled
driven
amlcd
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Application number
PCT/US2012/056814
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French (fr)
Inventor
Franky So
Do Young Kim
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University Of Florida Research Foundation, Inc.
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Publication of WO2013044200A1 publication Critical patent/WO2013044200A1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/08—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 light absorbing layer
    • G02F2201/083—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 light absorbing layer infrared absorbing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/44—Arrangements combining different electro-active layers, e.g. electrochromic, liquid crystal or electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • AMOLED active matrix organic light emitting display
  • TFT thin film transistor
  • AMOLED display is schematically illustrated in Figure 1 , where organic light emitting diodes (OLEDs) self-emit RGB colored lights, with gray scales produced by controlling current densities in R, G, B sub pixels, using several TFTs.
  • OLEDs organic light emitting diodes
  • AMOLEDs are superior to liquid crystal displays (LCDs) and plasma displays in their ability to show true black and certain color variations, making them very attractive for consumer products.
  • LCDs liquid crystal displays
  • plasma displays in their ability to show true black and certain color variations, making them very attractive for consumer products.
  • the use of a poly-Si TFT backplane which is needed for the AMOLEDs, has a number of shortcomings.
  • poly-Si TFTs display a poor uniformity with uncontrollable sizes, shapes, and positions of poly-Si grains, requiring that four or more poly-Si TFTs are used for each pixel to compensate for the poor uniformity.
  • the need for the multiple poly-Si TFTs makes the AMOLED technology very expensive for large sized displays.
  • a-Si:H TFT hydrogenated amorphous silicon thin film transistor
  • LCD TV which has excellent uniformity.
  • AMLCDs active matrix liquid crystal displays
  • RGB color lights are made by a white visible light (backlight) passing through RGB color filter, with the LCD acting as an array of light valves having opening ratios controlled by a-Si:H TFTs in R, G, B sub pixels, to generate the gray scales.
  • Embodiments of the present invention are directed to an infrared driven active matrix organic light emitting display (IR driven AMOLED).
  • the IR driven AMOLED comprises an active matrix liquid crystal display (AMLCD) having an IR backlight panel, that pixelates the device by controlling the transmittance of infrared (IR) radiation to an IR sensitive OLED (IROLED) panel comprising IR activated OLEDs, which are upconversion devices where IR radiation activates an OLED to generate visible radiation.
  • the IR backlight panel can be an IR emitting light emitting diode (IRLED) backlight panel.
  • the AMLCD panel is pixelated and the IROLED panel can be pixelated or non- pixelated.
  • the AMLCD panel is free of color filters as the IROLEDs emit lights that comprise primary color pixels of the display. BRIEF DESCRIPTION OF THE DRAWINGS
  • Figure 1 shows a schematic drawing of a prior art active matrix organic light emitting display (AMOLED) using a poly-Si TFT backplane.
  • AMOLED active matrix organic light emitting display
  • FIG. 2 shows a schematic drawing of a prior art active matrix liquid crystal display (AMLCD) using an hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) backplane and a visible LED backlight.
  • AMLCD active matrix liquid crystal display
  • a-Si:H TFT hydrogenated amorphous silicon thin film transistor
  • Figure 3 shows a schematic drawing of an AMOLED using a-Si:H TFT backplane, an infrared LED backlight, and an IR-to-visible up-conversion device, according to an embodiment of the invention.
  • Figure 4 is a schematic diagram of a transparent IR up-conversion device having a pair of transparent electrodes that can be included in the AMOLED according to an embodiment of the invention.
  • Figure 5 shows a) a schematic diagram of a transparent IR up-conversion device that can be included in the AMOLED according to an embodiment of the invention, where emitted visible light exits from two surfaces of the device and b) a schematic diagram of a transparent IR up-conversion device including an IR pass visible blocking layer to restrict emission of visible light to a single exit face of the stacked device that can be included in the AMOLED, according to an embodiment of the invention.
  • Figure 6 shows a schematic of an IR pass visible blocking layer that is constructed as a composite of alternating layers of two materials with different refractive indexes (RIs).
  • Figure 7 is a schematic diagram of an exemplary transparent IR up-conversion device including an IR pass visible blocking layer that can be included in the AMOLED, according to an embodiment of the invention.
  • Figure 8 shows visible spectra of cathodes having 10: 1 Mg:Ag with and without antireflective layers, indicating antireflective layers of various compositions and layer thicknesses.
  • Figure 9 is a plot of luminescence for different applied voltages for the IR up- conversion device of Figure 7.
  • Figure 10 is a schematic diagram of an AMLCD panel having a pair of transparent electrodes coupled to an IRLED backlight panel which defines and addresses the pixels of IR driven AMOLEDs, according to an embodiment of the invention.
  • Figure 11 is a schematic top view of the pixelated AMLCD panel, according to an embodiment of the invention.
  • Figure 12 is a schematic cross-section view of a pixelated IROLED panel that is aligned with the AMLCD panel to form an IR driven AMOLED, according to an embodiment of the invention.
  • Figure 13 is a schematic top view of a pixelated IROLED panel that comprises an IR driven AMOLED, according to an embodiment of the invention.
  • Figure 14 illustrates steps in a pixelation process for deposition of active materials of OLEDs as an array using vacuum thermal evaporation (VTE) and fine metal mask (FMM) to form a pixelated IROLED array for an IR driven AMOLED, according to an embodiment of the invention.
  • Figure 15 shows a schematic cross-section view of a full color IR driven AMOLED, where pixels of an AMLCD panel are aligned with an array of IROLED pixels in a pixelated IROLED panel, according to an embodiment of the invention.
  • Figure 16 shows a schematic off-set top view of a full color IR driven AMOLED, where pixels of an AMLCD panel are aligned with an array of IROLED pixels in a pixelated IROLED panel, according to an embodiment of the invention.
  • Figure 17 shows a schematic cross-section view of a full color IR driven AMOLED display comprising a non-pixelated IROLED panel, which comprises a stack of individual primary color OLED layers that are addressable at different sub-frames, according to an embodiment of the invention.
  • Figure 18 shows a schematic cross-section view of stacked and electrically separated R, G, and B IROLED layers that form a non-pixelated IROLED stack of a non- pixelated IROLED panel, according to an embodiment of the invention.
  • Figure 19 shows (left) a schematic diagram of a field sequential driven RGB full color IR driven AMOLED display comprising a non-pixelated IROLED panel with a common IR sensitizing layer where the pixelated AMLCD panel employs a single wavelength IRLED backlight panel, where the different layers of the non-pixelated IROLED stack are separately addressed during sub-frames as indicated (right) by graphs of intensity and bias versus time, according to an embodiment of the invention.
  • Figure 20 shows (left) a schematic diagram of a field sequential driven RGB full color IR driven AMOLED display comprising a non-pixelated IROLED panel with a pixelated AMLCD and an IRLED backlight panel comprising a multiplicity of IRLEDs that emit three different wavelengths, where the different layers of the non-pixelated IROLED panel are separately addressed during sub-frames by different IR radiation wavelengths, as indicated (right) by graphs of intensity and bias versus time, according to an embodiment of the invention.
  • Figure 21 shows a schematic cross-section diagram of an IR driven AMOLED panel, similar to that of Figure 15 but without a black matrix, where the AMLCD panel is the substrate of the pixelated IROLED panel and includes a buffer or IR pass visible mirror residing between a polarizer that is situated on the substrate and the IROLED panel, according to an embodiment of the invention.
  • Figure 22 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 15 but without a black matrix, where the AMLCD panel is the substrate of a pixclated IROLED panel with a buffer or IR pass visible mirror residing between the substrate and the IROLED panel and where the top polarizer is situated between the common electrode of the AMLCD panel and the substrate, according to an embot-iment of the invention.
  • Figure 23 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 17 but without a black matrix, where the AMLCD panel is the substrate of a non-pixelated IROLED panel and with a buffer or IR pass visible mirror residing between a polarize situated on the substrate and the IROLED panel, accordin to an embodiment of the invention.
  • Figure 24 shows a schematic cross-section diagram of an IR driven AMOLED, similar to mat of Figure 17 but without a black matrix, where the AMLCD panel is used as the substrate of a non-pixelated IROLED panel and with a buffer or IR pass visible mirror residing between the substrate and the IROLED panel and where the top polarizer is situated between the common electrode of the AMLCD panel and the substrate, according to an embodiment of the invention.
  • Figure 25 shows a schematic cross-section view of an RGB full color IR driven AMOLED comprising an DR. backlight plate having a reflective polarizer as the bottom polarizer of the AMLCD panel, according to an embodiment of the invention.
  • Figure 26 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 15, where a thin film encapsulation layer is used in place of the glass cap and getter of the pixelated IROLED panel, according to an embodiment of the invention.
  • Figure 27 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 17, where a thin film encapsulation layer is used in place of the glass cap and getter of the non-pixelated IROLED panel, according to an embodiment of the invention.
  • Figure 28 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 21 , where a thin film encapsulation layer is used in place of the glass cap and getter of the pixelated IROLED panel, according to an embc hment of the invention.
  • Figure 29 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 22, where a thin film encapsulation layer is used in place of the glass cap and getter of the pixelated IROLED panel, according to an embodiment of the invention.
  • Figure 30 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 23, where a thin film encapsulation layer is used in place of the glass cap and getter of the pixelated IROLED panel, according to an embodiment of the invention.
  • Figure 31 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 24, where a thin film encapsulation layer is used in place of the glass cap and getter of the pixelated IROLED panel, according to an embodiment of the invention.
  • Figure 32 is a schematic cross-section diagram of an IR driven AMOLED where a pixelated IROLED panel resides within the AMLCD panel, according to an embodiment of the invention.
  • Figure 33 is a schematic cross-section diagram of an IR driven AMOLED where a non-pixelated IROLED panel resides within the AMLCD panel, according to an embodiment of the invention.
  • Figure 34 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 28, where the top electrode of the IROLED panel is a semi-transparent thin metal top electrode to provide a weak cavity effect and has an IR pass visible mirror, according to an embodiment of the invention.
  • Figure 35 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 29, where the top electrode of the IROLED panel is a semi-transparent thin metal top electrode to provide a weak cavity effect and has an IR pass visible mirror, according to an embodiment of the invention.
  • Figure 36 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 32, where the top electrode of the IROLED panel is a semi-transparent thin metal top electrode to provide a weak cavity effect and has an IR pass visible mirror inserted above the thin film polarizer, according to an embodiment of the invention.
  • Figure 37 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 28, where a black matrix is situated on the common electrode of the AMLCD panel, according to an embodiment of the invention.
  • Figure 38 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 29, where a black matrix is situated on the common electrode of the AMLCD panel, according to an embodiment of the invention.
  • Figure 39 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 32, where a black matrix is situated on the common electrode of the AMLCD, according to an embodiment of the invention.
  • Figure 40 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 30, where a black matrix is situated on the common electrode of the AMLCD panel, according to an embodiment of the invention.
  • Figure 41 is a schematic cross-section diagram of an IR driven AMOLED similar to that of Figure 31 where a black matrix is situated on the common electrode of the AMLCD, according to an embodiment of the invention.
  • Figure 42 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 33, where a black matrix is situated on the common electrode of the AMLCD panel, according to an embodiment of the invention.
  • Figure 43 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 28, where a black matrix is situated on the bottom electrode of the IROLED panel, according to an embodiment of the invention.
  • Figure 44 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 29, where a black matrix is situated on the bottom electrode of the IROLED panel, according to an embodiment of the invention.
  • Figure 45 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 30, where a black matrix is situated on the bottom electrode of the IROLED panel, according to an embodiment of the invention.
  • Figure 46 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 28, where a first black matrix is situated on the common electrode of the AMLCD panel and a second black matrix is situated on the bottom electrode of the IROLED panel, according to an embodiment of the invention.
  • Figure 47 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 29, where a first black matrix is situated on the common electrode of the AMLCD panel and a second black matrix is situated on the bottom electrode of the IROLED panel, according to an embodiment of the invention.
  • Figure 48 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 30, where a first black matrix is situated on the common electrode of the AMLCD panel and a second black matrix is situated on the bottom electrode of the IROLED panel, according to an embodiment of the invention.
  • Figure 49 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 31, where a first black matrix is situated on the common electrode of the AMLCD panel and a second black matrix is situated on the bottom electrode of the IROLED panel, according to an embodiment of the invention.
  • AMOLED DESCRIPTION OF THE INVENTION To overcome the limitations of conventional active matrix organic light emitting displays (AMOLEDs), as shown in Figure 1 , that are prohibitively expensive for most large display applications, and to improve in display quality over active matrix liquid crystal displays (AMLCDs), shown in Figure 2, embodiments of the present invention are directed to IR driven AMOLEDs.
  • the IR driven AMOLEDs integrate an infrared-to- visible (IR-to-Vis) up-conversion device, an IR activated organic light emitting diode (OLED), on an AMLCD display that uses an IR backlight to generate the color pixels. In this manner, color is generated without the use of color filters, also referred to as a color mask, which is required for the colored pixels of a LCD.
  • IR-to-Vis infrared-to- visible
  • OLED IR activated organic light emitting diode
  • IR radiation generated by an IR LED backlight panel, passes through an AMLCD panel, where the IR radiation addresses and stimulates IR sensitive IR-to-Vis up-conversion devices, the IR activated OLEDs of the pixels.
  • an array of lenses can be employed to focus the IR radiation to the desired IR activated OLEDs.
  • the array of lenses can be situated at any position between the IR emitter and the IR activated OLED, for example, between the AMLCD panel and the IR activated OLEDs.
  • These IR activated OLEDs absorb IR light and emit the desired RGB visible light. No color filters are needed for the color generation.
  • the IR backlight panel emits infrared radiation, which, for embodiments of the present invention, may be any electromagnetic radiation having a wavelength longer than the nominal edge of visible red light, ⁇ 0.74 ⁇ .
  • the AMLCDs comprising a back panel having an IR emitting source, for example, an IR LED backlight panel, can be made by adapting any conventional process AMLCD process, and does not require any steps for the deposition of a color filter layer.
  • An IR LED backlight panel can comprise a matrix of IR LEDs in the manner that a conventional LED comprises a matrix of visible white light LEDs.
  • the IR LEDs can be, for example, GaAs/AlGaAs LEDs.
  • the AMLCD panel separates the IR emitting source from the IR activated
  • the AMLCD comprises a bottom polarizer, a thin film transistor (TFT) backplane, a liquid crystal (LC) segment, a top common electrode plane, an optical compensation film, and a top polarizer.
  • TFT thin film transistor
  • LC liquid crystal
  • the AMLCD does not require color filters for use in the AMOLEDs, according to embodiments of the invention.
  • the liquid crystal (LC) within the LC segment can be of a twisted neumatic (TN) LC mode, vertical alignment (VA) mode, multi-domain vertical alignment (MVA) mode, patterned vertical alignment (PVA) mode, plane line switching (PLS) mode, advanced super view (ASV) mode, in-plane switching (IPS) mode, fringe field switching (FFS) mode, advanced fringe field switching (AFFS) mode, or any other LC mode.
  • the TFT backplate can be a matrix of a-Si:H TFTs, nanocrystalline silicon (nc-Si) TFTs, ⁇ ⁇ ⁇ -Si TFTs, poly-Si TFTs, oxide TFTs, organic TFTs or any other TFTs.
  • the top common electrode plane is any visible light transparent electrode, for example, an indium tin oxide (ITO) electrode delineated with a black matrix.
  • ITO indium tin oxide
  • the IR activated OLEDs of the AMOLED can be transparent to visible and infrared light, for example, as shown in Figure 4, where the electrodes are adjacent to glass substrates.
  • the interior face of the up-conversion device is transparent to IR light, but is not transparent to visible light, and the external viewing face is transparent to visible light.
  • the up-conversion device comprises two visibly transparent electrodes that will emit visible light to both electrodes.
  • An IR pass visible blocking layer can be employed on the internally directed face of the up-conversion device.
  • IR pass visible blocking layer acts as a mirror to visible light
  • reflected visible light also exits through the opposite externally directed face, as illustrated in Figure 5b, which permits optimization of the brightness of the IR activated OLED used in the AMOLED, according to an embodiment of the invention.
  • the transparent up-conversion device the IR activated OLED
  • the layer comprises a transparent anode, at least one hole blocking layer, an IR sensitizing layer, at least one hole transport layer, a light emitting layer, at least one electron transport layer, and a transparent cathode.
  • the stacked layer structure can be less than a micron in thickness, although thicker structures can be used.
  • the anode of the IR activated OLED can be chosen from any appropriate conducting material including, but not limited to: indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO); carbon nanotubes; or silver nanowires.
  • the hole blocking layer can be chosen from any appropriate material including, but not limited to: Ti0 2 ; ZnO; BCP; Bphen; 3TPYMB; or UGH2.
  • the IR sensitizing layer can be any appropriate material including, but not limited to: PbSe QDs; PbS QDs; PbSe film; PbS film; InAs film; InGaAs film; Si film; Ge film; GaAs film; perylene-3,4,9, 10-tetracarboxylic-3,4,9,10-dianhydride (PTCDA); tin (II) phthalocyanine (SnPc); SnPc:C 6 o; aluminum phthalocyanine chloride (AlPcCl); AlPcCl:C 60 ; titanyl phthalocyanine (TiOPc); or TiOPc:C 60 .
  • PTCDA perylene-3,4,9, 10-tetracarboxylic-3,4,9,10-dianhydride
  • tin (II) phthalocyanine (SnPc) SnPc:C 6 o
  • AlPcCl aluminum phthalocyanine chloride
  • the hole transport layer can be any appropriate material including, but not limited to: l,l-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC); N,N'-diphenyl-N,N'(2-naphthyl)-(l,l '-phenyl)-4,4'-diamine (NPB); and ⁇ , ⁇ '- diphenyl-N,N'-di(m-tolyl) benzidine (TPD).
  • TAPC l,l-bis[(di-4-tolylamino)phenyl]cyclohexane
  • NPB N,N'-diphenyl-N,N'(2-naphthyl)-(l,l '-phenyl)-4,4'-diamine
  • TPD ⁇ , ⁇ '- diphenyl-N,N'-di(m-tolyl) benzidine
  • the light emitting layer can be any appropriate material including, but not limited to: tra-(2-phenylpyidine) iridium; Ir(ppy) 3 ; poly-[2-methoxy-5-(2'-ethyl-hexyloxy) phenylene vinylene] (MEH-PPV); tris-( - hydroxy quinoline) aluminum (Alq 3 ); or iridium (III) £w-[(4,6-di-fluorophenyl)- pyridinate-N,C2 , ]picolinate (FIrpic).
  • the electron transport layer can be any appropriate material including, but not limited to: tris[3-(3-pyridyl)-mesityl]borane (3TPYMB); 2,9- Dimethyl-4,7-diphenyl- 1 , 10-phenanthroline (BCP); 4,7-diphenyl- 1 , 10-phenanthroline (BPhen); and tris-(8-hydroxy quinoline) aluminum (Alq 3 ).
  • the cathode can be any appropriate material including, but not limited to: Indium Tin Oxide (ITO); Indium Zinc Oxide (IZO); Aluminum Tin Oxide (ATO); Aluminum Zinc Oxide (AZO); carbon nanotubes; silver nanowires; and an Mg:Al layer.
  • An anti-reflecting layer can be situated upon the externally directed face of the IR-sensitive OLED.
  • An IR pass visible blocking layer as indicated in Figure 5b, can be included in the IR-sensitive OLED of an AMOLED, according to an embodiment of the invention.
  • An IR pass visible blocking layer employs a multi dielectric stack layer, as shown in Figure 6.
  • the IR pass visible blocking layer uses a stack of dielectric films with alternating films having different refractive indices, one of high refractive index and another of significantly lower refractive index.
  • the IR pass visible blocking layer can be any layered materials of sufficiently different RI, including, but not limited to: alternating Ti0 2 layers and Si0 2 layers; and alternating LiF layers and Te0 2 layers.
  • the IR pass visible blocking layer can comprise one or more layers that inherently have high IR transparency, but are opaque to visible light, for example, Si, CdS, InP, or CdTe.
  • Figure 7 shows an exemplary IR-sensitive OLED, where a thin stack layer of Mg:Ag (10: 1 volume ratio)/Alq3 is employed as the transparent top electrode having an anti-reflective coating.
  • the Mg:Ag layer and Alq3 layer are the transparent electrode and the anti-reflecting layer, respectively.
  • a Mg:Ag (1 1 nm)/Alq3 (50 nm) stack layer has a transparency of 78 % at 516 nm, as shown in Figure 8.
  • Figure 9 is a plot of the luminescence for increasing voltage, the L-V characteristics, of the transparent up- conversion device of Figure 7 with a Mg:Ag (1 1 nm)/Alq3 (50 nm) top electrode.
  • a thin film encapsulant can be employed, including, but not limited to: Si0 2 ; Si 3 N 4 ; SiO x N y ; A1 2 0 3 ; A10 x N y ; Si0 2 /polymer/Si0 2 ; or Al 2 0 3 /polymer/Al 2 0 3 .
  • the IR backlight panel generates and transmits IR radiation through a polarizer and subsequently into an array of pixels of the AMLCD panel that are addressed in rows and columns, as shown in Figure
  • the IR backlight panel emits infrared radiation, which may be any electromagnetic radiation provided as one or more wavelengths longer than the nominal edge of visible red light, > 0.74 ⁇ .
  • Each pixel of the AMLCD panel is addressed by a data line and a gate line on the lower substrate (opposite the viewing face of the AMOLED) connected with a thin film transistor (TFT) used to control current to the individual transparent pixel electrodes adjacent to a liquid crystal layer that rearranges due to the electric field generated between the pixel electrode and a common IR transparent electrode residing on the top (viewing face) substrate, to adjust the transmittance of the IR light through the liquid crystal layer.
  • TFT thin film transistor
  • the common electrode can be delineated with a black matrix that is aligned around the area above the pixel electrode to further optically separate the pixels.
  • the IR radiation that is transmitted from the pixels of the AMLCD panel addresses IROLEDs that produce the color pixels of the IR driven AMOLED, which emits any combination of primary colors that permit a full color display, for example, a multiplicity of IROLEDs that emit, for example: red, green, and blue (RGB); red, yellow, and blue (RYB), red, yellow, green, and blue (RYGB) or cyan, magenta, and yellow (CMY).
  • RGB red, green, and blue
  • RYB red, yellow, green, and blue
  • RYGB red, yellow, green, and blue
  • CY cyan, magenta, and yellow
  • the pixelated IR driven AMOLED comprises an array of IROLEDs, according to an embodiment of the invention, where the cross-section of the IROLED panel is shown in Figure 12 and results in a viewing (top) face that is shown in Figure 13. As shown in Figure 13, an array of IROLEDs is formed between two electrodes.
  • the IROLEDs can be formed by subsequent deposition of the R, B, and G emitting materials as an array of pixels on a visible light transmissive electrode on a substrate, for example, by vacuum thermal evaporation (VTE) using a fine metal mask (FMM), as illustrated in Figure 14.
  • VTE vacuum thermal evaporation
  • FMM fine metal mask
  • the IR driven AMOLED includes, as shown in Figure 18, a non-pixelated stack of red, green, and blue IROLEDs.
  • Each of the non-pixelated RGB IROLEDs is addressed by a field sequential drive such that each layer is active for a sub-frame during a viewing frame, as illustrated in Figure 19.
  • the full color images result from sequentially turning on of red, green, and blue light at each of the non-pixelated RGB IROLEDs where: during a red sub-frame, only the red IROLED is on-biased by a voltage, for example, 10 V; during the green sub-frame, only the green IROLED is on-biased; and during the blue sub-frame, only the blue IROLED is on-biased, while the other two color IROLED s reside in an off- bias, 0 V, such that only the desired color IROLED is emitted in the area above a pixel of the AMLCD panel that delivers IR radiation to the on-biased IROLED.
  • the intensity of the IR radiation that strikes a red IROLED need not be equal to that which strikes the green or blue IROLEDs, but can be controlled by the AMLCD panel, as indicated in Figure 19 where, for illustration, the intensity of the IR radiation provided during the red sub-frame is less than the intensity provided during the green sub-frame, which is still less than the intensity of IR radiation provided during the blue sub-frame.
  • the IR intensity that is applied can be of any order; for example, red may require greater intensity than blue, which requires a lesser intensity that green, or any other combination of like or unlike intensities.
  • the intensity of the IR radiation can be controlled by the portion of IR allowed through the liquid crystal portion of the AMLCD panel due to the degree of alignment of the liquid crystals or to the quantity of IR light provided to the AMLCD panel from the IRLED back panel, which can be controlled by the bias applied to the IRLEDs or the number of IRLEDs biased.
  • the IR radiation intensity can be constant and the red IROLED, green IROLED and blue IROLED can have different bias when on.
  • the IR backlight panel can comprise more than one IRLED, such that different IRLEDs emit different wavelengths.
  • the wavelength emitted can be paired to an IR sensitizing layer of the IROLED panel.
  • the different RGB IROLEDs can be addressed by different IR wavelengths in different sub-frames.
  • the bias to the IRLEDs, IROLEDs, AMLCD pixels, or any combination thereof can be of like or different values.
  • AMOLED display has a pixelated IROLED panel situated directly on the AMLCD panel, as shown in Figure 21, where the top of the AMLCD panel and the bottom of the IROLED panel share a common substrate.
  • a buffer layer or an IR pass visible mirror, which also functions as the buffer layer, is formed on the top polarizer of the AMLCD and separates the polarizer from the electrode of the IROLED panel, for example, and ITO electrode.
  • the buffer layer can protect the polarizer during deposition of the electrode. Alternatively, no buffer layer is required when the top polarizer of the AMLCD panel is situated within the AMLCD panel.
  • Figure 22 shows an IR driven AMOLED where the polarizer is within the AMLCD panel and the electrode of the IROLED is situated upon a buffer or an IR pass visible mirror.
  • the IROLED panel can be non-pixelated and situated directly on the AMLCD panel, as shown in Figures 23 and 24, for devices requiring a buffer layer (or an IR pass visible mirror) or placement of the top polarizer within the AMLCD panel, respectively.
  • the AMLCD panel has an IR reflective bottom polarizer, which is situated between the IRLED backlight panel and the AMLCD panel, is a wire-grid polarizer (WGP) or other reflective polarizer.
  • WGP wire-grid polarizer
  • the reflected IR light is again transmitted to the WGP, which allows a reduction of the power consumed when transmitting an equivalent amount of IR radiation to the AMLCD panel relative to a device that uses a polarizer that is not reflective.
  • the top substrate of the IROLED in the IR driven AMOLED is not provided as a rigid substrate, such as glass, but comprises a thin film encapsulant that allows a reduction in thickness of the IR driven AMOLED.
  • a thin film encapsulant that allows a reduction in thickness of the IR driven AMOLED.
  • the IROLED panel of the devices resides within the AMLCD panel, where a thin film encapsulant is used to separate the IROLED panel from the common electrode and top polarizer of the AMLCD panel, where the IROLED panel is situated beneath the top substrate of the AMLCD panel, which is the viewing face of the device.
  • the IROLED panel can be pixelated, as shown in Figure 32, or non-pixelated, as shown in Figure 25.
  • a semi-transparent thin metal electrode is used in the top (viewing face) of the IROLED panel.
  • the thin metal film electrode provides a weak cavity effect that increases color purity to provide an improved color gamut.
  • the semi-transparent thin metal electrode can be used in an IROLED panel that is part of any of the devices described above, as shown in: Figure 34 with a pixelated IROLED panel similar to that shown in Figure 20; Figure 35 with a pixelated IROLED panel similar to that shown in Figure 21 ; or as shown in Figure 36 where the IROLED panel is within the AMLCD panel in a manner similar to that shown in Figure 29 but where the top electrode of the IROLED panel is semitransparent rather than transparent.
  • the semi-transparent thin metal electrode can be included in any IR driven AMOLED device including, but not limited to, those that are non-pixelated, those that include a glass cap and a getter, and/or those where the IROLED panel and the AMLCD panel do not share a common substrate.
  • a black matrix can be included to isolate pixels and to aid in the alignment of pixels in the pixelated IROLED array component and the AMLCD panel.
  • devices can be constructed without a black matrix, as illustrated in Figures 26-25 (and 28-36 where a common substrate is included for the IROLED panel and AMLCD panel), it is often advantageous to include one or more black matrixes in these devices.
  • the black matrix can be placed on the common electrode of the AMLCD panel with a pixelated IROLED panel, as shown in Figures 37-39, on the common electrode of the AMLCD panel with a non- pixelated IROLED panel, as shown in Figure 40-42, on an electrode of a pixelated IROLED panel, as shown in Figure 44, or on an electrode of a non-pixelated IROLED panel, as shown in Figure 37.
  • a plurality of black matrixes can be placed: on the common electrode of the AMLCD panel and an electrode of a pixelated IROLED panel, as shown in Figures 46 and 47; or on the common electrode of the AMLCD panel and an electrode of a non-pixelated IROLED panel, as shown in Figures 48 and 49.
  • the IRLED backlight panel can or cannot comprise a matrix of IRLEDs in the manner that a conventional LED backlight panel does or doesn't comprise a matrix of visible white light LEDs.
  • the AMOLEDs permit the fabrication of large sized devices at significantly lower prices than current AMOLEDs.
  • the AMOLEDs, according to embodiments of the invention can be used as consumer products, such as wide screen televisions and computer displays.

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Abstract

An infrared (IR) driven active matrix organic light emitting display (IR driven AMOLED) is formed by placing an IR activated OLED (IROLED) panel on an active matrix liquid crystal display (AMLCD) panel that has no color filters and has an IR backlight panel. The IROLEDs are up-conversion devices that convert the IR radiation transmitted through the IR driven AMOLED panel into visible light of a desired primary color.

Description

INFRARED DRIVEN OLED DISPLAY
CROSS-REFERENCE TO RELATED APPLICATIONS The present application claims the benefit of U.S. Provisional Application Serial
No. 61/538,290, filed September 23, 201 1 , and U.S. Provisional Application Serial No. 61/665,467, filed June 28, 2012, which are hereby incorporated by reference herein in their entireties, including any figures, tables, or drawings. BACKGROUND OF THE INVENTION
Conventional active matrix organic light emitting display (AMOLED) technology uses a poly-Si thin film transistor (TFT) backplane to drive the active matrix. A conventional AMOLED display is schematically illustrated in Figure 1 , where organic light emitting diodes (OLEDs) self-emit RGB colored lights, with gray scales produced by controlling current densities in R, G, B sub pixels, using several TFTs. AMOLEDs are superior to liquid crystal displays (LCDs) and plasma displays in their ability to show true black and certain color variations, making them very attractive for consumer products. However, the use of a poly-Si TFT backplane, which is needed for the AMOLEDs, has a number of shortcomings. It is difficult to increase the substrate size in the poly-Si TFT process because it is difficult to increase the laser beam size used for poly-Si crystallization. Additionally, poly-Si TFTs display a poor uniformity with uncontrollable sizes, shapes, and positions of poly-Si grains, requiring that four or more poly-Si TFTs are used for each pixel to compensate for the poor uniformity. The need for the multiple poly-Si TFTs makes the AMOLED technology very expensive for large sized displays.
This uniformity problem does not discourage the use of poly-Si in other types of displays. Nevertheless, hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) backplates are presently used with large substrates, for example a LCD TV, which has excellent uniformity. In conventional active matrix liquid crystal displays (AMLCDs), as shown in Figure 2, RGB color lights are made by a white visible light (backlight) passing through RGB color filter, with the LCD acting as an array of light valves having opening ratios controlled by a-Si:H TFTs in R, G, B sub pixels, to generate the gray scales.
Many attempts have been made to use a-Si:H TFT backplanes for AMOLEDs. Unfortunately, the problem of threshold voltage (Vth) shift problem, caused by prolonged gate bias stress, has not been solved for DC driven OLEDs. Hence, there remains a need to develop a viable drive system for affordable large sized AMOLED applications.
BRIEF SUMMARY OF THE INVENTION
Embodiments of the present invention are directed to an infrared driven active matrix organic light emitting display (IR driven AMOLED). The IR driven AMOLED comprises an active matrix liquid crystal display (AMLCD) having an IR backlight panel, that pixelates the device by controlling the transmittance of infrared (IR) radiation to an IR sensitive OLED (IROLED) panel comprising IR activated OLEDs, which are upconversion devices where IR radiation activates an OLED to generate visible radiation. The IR backlight panel can be an IR emitting light emitting diode (IRLED) backlight panel. The AMLCD panel is pixelated and the IROLED panel can be pixelated or non- pixelated. The AMLCD panel is free of color filters as the IROLEDs emit lights that comprise primary color pixels of the display. BRIEF DESCRIPTION OF THE DRAWINGS
Figure 1 shows a schematic drawing of a prior art active matrix organic light emitting display (AMOLED) using a poly-Si TFT backplane.
Figure 2 shows a schematic drawing of a prior art active matrix liquid crystal display (AMLCD) using an hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) backplane and a visible LED backlight.
Figure 3 shows a schematic drawing of an AMOLED using a-Si:H TFT backplane, an infrared LED backlight, and an IR-to-visible up-conversion device, according to an embodiment of the invention.
Figure 4 is a schematic diagram of a transparent IR up-conversion device having a pair of transparent electrodes that can be included in the AMOLED according to an embodiment of the invention. Figure 5 shows a) a schematic diagram of a transparent IR up-conversion device that can be included in the AMOLED according to an embodiment of the invention, where emitted visible light exits from two surfaces of the device and b) a schematic diagram of a transparent IR up-conversion device including an IR pass visible blocking layer to restrict emission of visible light to a single exit face of the stacked device that can be included in the AMOLED, according to an embodiment of the invention.
Figure 6 shows a schematic of an IR pass visible blocking layer that is constructed as a composite of alternating layers of two materials with different refractive indexes (RIs).
Figure 7 is a schematic diagram of an exemplary transparent IR up-conversion device including an IR pass visible blocking layer that can be included in the AMOLED, according to an embodiment of the invention.
Figure 8 shows visible spectra of cathodes having 10: 1 Mg:Ag with and without antireflective layers, indicating antireflective layers of various compositions and layer thicknesses.
Figure 9 is a plot of luminescence for different applied voltages for the IR up- conversion device of Figure 7.
Figure 10 is a schematic diagram of an AMLCD panel having a pair of transparent electrodes coupled to an IRLED backlight panel which defines and addresses the pixels of IR driven AMOLEDs, according to an embodiment of the invention.
Figure 11 is a schematic top view of the pixelated AMLCD panel, according to an embodiment of the invention.
Figure 12 is a schematic cross-section view of a pixelated IROLED panel that is aligned with the AMLCD panel to form an IR driven AMOLED, according to an embodiment of the invention.
Figure 13 is a schematic top view of a pixelated IROLED panel that comprises an IR driven AMOLED, according to an embodiment of the invention.
Figure 14 illustrates steps in a pixelation process for deposition of active materials of OLEDs as an array using vacuum thermal evaporation (VTE) and fine metal mask (FMM) to form a pixelated IROLED array for an IR driven AMOLED, according to an embodiment of the invention. Figure 15 shows a schematic cross-section view of a full color IR driven AMOLED, where pixels of an AMLCD panel are aligned with an array of IROLED pixels in a pixelated IROLED panel, according to an embodiment of the invention.
Figure 16 shows a schematic off-set top view of a full color IR driven AMOLED, where pixels of an AMLCD panel are aligned with an array of IROLED pixels in a pixelated IROLED panel, according to an embodiment of the invention.
Figure 17 shows a schematic cross-section view of a full color IR driven AMOLED display comprising a non-pixelated IROLED panel, which comprises a stack of individual primary color OLED layers that are addressable at different sub-frames, according to an embodiment of the invention.
Figure 18 shows a schematic cross-section view of stacked and electrically separated R, G, and B IROLED layers that form a non-pixelated IROLED stack of a non- pixelated IROLED panel, according to an embodiment of the invention.
Figure 19 shows (left) a schematic diagram of a field sequential driven RGB full color IR driven AMOLED display comprising a non-pixelated IROLED panel with a common IR sensitizing layer where the pixelated AMLCD panel employs a single wavelength IRLED backlight panel, where the different layers of the non-pixelated IROLED stack are separately addressed during sub-frames as indicated (right) by graphs of intensity and bias versus time, according to an embodiment of the invention.
Figure 20 shows (left) a schematic diagram of a field sequential driven RGB full color IR driven AMOLED display comprising a non-pixelated IROLED panel with a pixelated AMLCD and an IRLED backlight panel comprising a multiplicity of IRLEDs that emit three different wavelengths, where the different layers of the non-pixelated IROLED panel are separately addressed during sub-frames by different IR radiation wavelengths, as indicated (right) by graphs of intensity and bias versus time, according to an embodiment of the invention.
Figure 21 shows a schematic cross-section diagram of an IR driven AMOLED panel, similar to that of Figure 15 but without a black matrix, where the AMLCD panel is the substrate of the pixelated IROLED panel and includes a buffer or IR pass visible mirror residing between a polarizer that is situated on the substrate and the IROLED panel, according to an embodiment of the invention. Figure 22 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 15 but without a black matrix, where the AMLCD panel is the substrate of a pixclated IROLED panel with a buffer or IR pass visible mirror residing between the substrate and the IROLED panel and where the top polarizer is situated between the common electrode of the AMLCD panel and the substrate, according to an embot-iment of the invention.
Figure 23 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 17 but without a black matrix, where the AMLCD panel is the substrate of a non-pixelated IROLED panel and with a buffer or IR pass visible mirror residing between a polarize situated on the substrate and the IROLED panel, accordin to an embodiment of the invention.
Figure 24 shows a schematic cross-section diagram of an IR driven AMOLED, similar to mat of Figure 17 but without a black matrix, where the AMLCD panel is used as the substrate of a non-pixelated IROLED panel and with a buffer or IR pass visible mirror residing between the substrate and the IROLED panel and where the top polarizer is situated between the common electrode of the AMLCD panel and the substrate, according to an embodiment of the invention.
Figure 25 shows a schematic cross-section view of an RGB full color IR driven AMOLED comprising an DR. backlight plate having a reflective polarizer as the bottom polarizer of the AMLCD panel, according to an embodiment of the invention.
Figure 26 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 15, where a thin film encapsulation layer is used in place of the glass cap and getter of the pixelated IROLED panel, according to an embodiment of the invention.
Figure 27 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 17, where a thin film encapsulation layer is used in place of the glass cap and getter of the non-pixelated IROLED panel, according to an embodiment of the invention.
Figure 28 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 21 , where a thin film encapsulation layer is used in place of the glass cap and getter of the pixelated IROLED panel, according to an embc hment of the invention. Figure 29 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 22, where a thin film encapsulation layer is used in place of the glass cap and getter of the pixelated IROLED panel, according to an embodiment of the invention.
Figure 30 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 23, where a thin film encapsulation layer is used in place of the glass cap and getter of the pixelated IROLED panel, according to an embodiment of the invention.
Figure 31 shows a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 24, where a thin film encapsulation layer is used in place of the glass cap and getter of the pixelated IROLED panel, according to an embodiment of the invention.
Figure 32 is a schematic cross-section diagram of an IR driven AMOLED where a pixelated IROLED panel resides within the AMLCD panel, according to an embodiment of the invention.
Figure 33 is a schematic cross-section diagram of an IR driven AMOLED where a non-pixelated IROLED panel resides within the AMLCD panel, according to an embodiment of the invention.
Figure 34 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 28, where the top electrode of the IROLED panel is a semi-transparent thin metal top electrode to provide a weak cavity effect and has an IR pass visible mirror, according to an embodiment of the invention.
Figure 35 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 29, where the top electrode of the IROLED panel is a semi-transparent thin metal top electrode to provide a weak cavity effect and has an IR pass visible mirror, according to an embodiment of the invention.
Figure 36 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 32, where the top electrode of the IROLED panel is a semi-transparent thin metal top electrode to provide a weak cavity effect and has an IR pass visible mirror inserted above the thin film polarizer, according to an embodiment of the invention. Figure 37 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 28, where a black matrix is situated on the common electrode of the AMLCD panel, according to an embodiment of the invention.
Figure 38 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 29, where a black matrix is situated on the common electrode of the AMLCD panel, according to an embodiment of the invention.
Figure 39 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 32, where a black matrix is situated on the common electrode of the AMLCD, according to an embodiment of the invention.
Figure 40 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 30, where a black matrix is situated on the common electrode of the AMLCD panel, according to an embodiment of the invention.
Figure 41 is a schematic cross-section diagram of an IR driven AMOLED similar to that of Figure 31 where a black matrix is situated on the common electrode of the AMLCD, according to an embodiment of the invention.
Figure 42 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 33, where a black matrix is situated on the common electrode of the AMLCD panel, according to an embodiment of the invention.
Figure 43 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 28, where a black matrix is situated on the bottom electrode of the IROLED panel, according to an embodiment of the invention.
Figure 44 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 29, where a black matrix is situated on the bottom electrode of the IROLED panel, according to an embodiment of the invention.
Figure 45 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 30, where a black matrix is situated on the bottom electrode of the IROLED panel, according to an embodiment of the invention.
Figure 46 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 28, where a first black matrix is situated on the common electrode of the AMLCD panel and a second black matrix is situated on the bottom electrode of the IROLED panel, according to an embodiment of the invention. Figure 47 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 29, where a first black matrix is situated on the common electrode of the AMLCD panel and a second black matrix is situated on the bottom electrode of the IROLED panel, according to an embodiment of the invention.
Figure 48 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 30, where a first black matrix is situated on the common electrode of the AMLCD panel and a second black matrix is situated on the bottom electrode of the IROLED panel, according to an embodiment of the invention.
Figure 49 is a schematic cross-section diagram of an IR driven AMOLED, similar to that of Figure 31, where a first black matrix is situated on the common electrode of the AMLCD panel and a second black matrix is situated on the bottom electrode of the IROLED panel, according to an embodiment of the invention.
DETAILED DESCRIPTION OF THE INVENTION To overcome the limitations of conventional active matrix organic light emitting displays (AMOLEDs), as shown in Figure 1 , that are prohibitively expensive for most large display applications, and to improve in display quality over active matrix liquid crystal displays (AMLCDs), shown in Figure 2, embodiments of the present invention are directed to IR driven AMOLEDs. The IR driven AMOLEDs integrate an infrared-to- visible (IR-to-Vis) up-conversion device, an IR activated organic light emitting diode (OLED), on an AMLCD display that uses an IR backlight to generate the color pixels. In this manner, color is generated without the use of color filters, also referred to as a color mask, which is required for the colored pixels of a LCD. An AMOLED, according to an embodiment of the invention, is shown in Figure 3. In this embodiment, IR radiation, generated by an IR LED backlight panel, passes through an AMLCD panel, where the IR radiation addresses and stimulates IR sensitive IR-to-Vis up-conversion devices, the IR activated OLEDs of the pixels. As needed or desired, an array of lenses can be employed to focus the IR radiation to the desired IR activated OLEDs. The array of lenses can be situated at any position between the IR emitter and the IR activated OLED, for example, between the AMLCD panel and the IR activated OLEDs. These IR activated OLEDs absorb IR light and emit the desired RGB visible light. No color filters are needed for the color generation. According to embodiments of the invention, the IR backlight panel emits infrared radiation, which, for embodiments of the present invention, may be any electromagnetic radiation having a wavelength longer than the nominal edge of visible red light, < 0.74 μηι.
The AMLCDs comprising a back panel having an IR emitting source, for example, an IR LED backlight panel, can be made by adapting any conventional process AMLCD process, and does not require any steps for the deposition of a color filter layer. An IR LED backlight panel can comprise a matrix of IR LEDs in the manner that a conventional LED comprises a matrix of visible white light LEDs. The IR LEDs can be, for example, GaAs/AlGaAs LEDs.
The AMLCD panel separates the IR emitting source from the IR activated
OLEDs, an IR-to-Vis up-conversion device. The AMLCD comprises a bottom polarizer, a thin film transistor (TFT) backplane, a liquid crystal (LC) segment, a top common electrode plane, an optical compensation film, and a top polarizer. The AMLCD does not require color filters for use in the AMOLEDs, according to embodiments of the invention. The liquid crystal (LC) within the LC segment can be of a twisted neumatic (TN) LC mode, vertical alignment (VA) mode, multi-domain vertical alignment (MVA) mode, patterned vertical alignment (PVA) mode, plane line switching (PLS) mode, advanced super view (ASV) mode, in-plane switching (IPS) mode, fringe field switching (FFS) mode, advanced fringe field switching (AFFS) mode, or any other LC mode. The TFT backplate can be a matrix of a-Si:H TFTs, nanocrystalline silicon (nc-Si) TFTs, μηι-Si TFTs, poly-Si TFTs, oxide TFTs, organic TFTs or any other TFTs. The top common electrode plane is any visible light transparent electrode, for example, an indium tin oxide (ITO) electrode delineated with a black matrix.
According to embodiments of the invention, the IR activated OLEDs of the AMOLED can be transparent to visible and infrared light, for example, as shown in Figure 4, where the electrodes are adjacent to glass substrates. In other embodiments of the invention, the interior face of the up-conversion device is transparent to IR light, but is not transparent to visible light, and the external viewing face is transparent to visible light. As illustrated in Figure 5a, the up-conversion device comprises two visibly transparent electrodes that will emit visible light to both electrodes. An IR pass visible blocking layer can be employed on the internally directed face of the up-conversion device. Where the IR pass visible blocking layer acts as a mirror to visible light, reflected visible light also exits through the opposite externally directed face, as illustrated in Figure 5b, which permits optimization of the brightness of the IR activated OLED used in the AMOLED, according to an embodiment of the invention.
The transparent up-conversion device, the IR activated OLED, can have a stacked layer structure. The layer comprises a transparent anode, at least one hole blocking layer, an IR sensitizing layer, at least one hole transport layer, a light emitting layer, at least one electron transport layer, and a transparent cathode. The stacked layer structure can be less than a micron in thickness, although thicker structures can be used.
The anode of the IR activated OLED can be chosen from any appropriate conducting material including, but not limited to: indium tin oxide (ITO), indium zinc oxide (IZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO); carbon nanotubes; or silver nanowires. The hole blocking layer can be chosen from any appropriate material including, but not limited to: Ti02; ZnO; BCP; Bphen; 3TPYMB; or UGH2. The IR sensitizing layer can be any appropriate material including, but not limited to: PbSe QDs; PbS QDs; PbSe film; PbS film; InAs film; InGaAs film; Si film; Ge film; GaAs film; perylene-3,4,9, 10-tetracarboxylic-3,4,9,10-dianhydride (PTCDA); tin (II) phthalocyanine (SnPc); SnPc:C6o; aluminum phthalocyanine chloride (AlPcCl); AlPcCl:C60; titanyl phthalocyanine (TiOPc); or TiOPc:C60. The hole transport layer can be any appropriate material including, but not limited to: l,l-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC); N,N'-diphenyl-N,N'(2-naphthyl)-(l,l '-phenyl)-4,4'-diamine (NPB); and Ν,Ν'- diphenyl-N,N'-di(m-tolyl) benzidine (TPD). The light emitting layer can be any appropriate material including, but not limited to: tra-(2-phenylpyidine) iridium; Ir(ppy)3; poly-[2-methoxy-5-(2'-ethyl-hexyloxy) phenylene vinylene] (MEH-PPV); tris-( - hydroxy quinoline) aluminum (Alq3); or iridium (III) £w-[(4,6-di-fluorophenyl)- pyridinate-N,C2,]picolinate (FIrpic). The electron transport layer can be any appropriate material including, but not limited to: tris[3-(3-pyridyl)-mesityl]borane (3TPYMB); 2,9- Dimethyl-4,7-diphenyl- 1 , 10-phenanthroline (BCP); 4,7-diphenyl- 1 , 10-phenanthroline (BPhen); and tris-(8-hydroxy quinoline) aluminum (Alq3). The cathode can be any appropriate material including, but not limited to: Indium Tin Oxide (ITO); Indium Zinc Oxide (IZO); Aluminum Tin Oxide (ATO); Aluminum Zinc Oxide (AZO); carbon nanotubes; silver nanowires; and an Mg:Al layer. An anti-reflecting layer can be situated upon the externally directed face of the IR-sensitive OLED. An IR pass visible blocking layer, as indicated in Figure 5b, can be included in the IR-sensitive OLED of an AMOLED, according to an embodiment of the invention. An IR pass visible blocking layer employs a multi dielectric stack layer, as shown in Figure 6. The IR pass visible blocking layer uses a stack of dielectric films with alternating films having different refractive indices, one of high refractive index and another of significantly lower refractive index. An exemplary IR pass visible blocking layer is constructed of a composite of alternating Ta205 layers (RI = 2.1) and Si02 layers (RI =
I .45), for example a multi dielectric stack of layers where [Ta205(x nm)/Si02(y nm)]z where x is 10 to 100, y is 10 to 100 and z is 1 to 40. The IR pass visible blocking layer can be any layered materials of sufficiently different RI, including, but not limited to: alternating Ti02 layers and Si02 layers; and alternating LiF layers and Te02 layers. The IR pass visible blocking layer can comprise one or more layers that inherently have high IR transparency, but are opaque to visible light, for example, Si, CdS, InP, or CdTe.
Figure 7 shows an exemplary IR-sensitive OLED, where a thin stack layer of Mg:Ag (10: 1 volume ratio)/Alq3 is employed as the transparent top electrode having an anti-reflective coating. The Mg:Ag layer and Alq3 layer are the transparent electrode and the anti-reflecting layer, respectively. A Mg:Ag (1 1 nm)/Alq3 (50 nm) stack layer has a transparency of 78 % at 516 nm, as shown in Figure 8. Figure 9 is a plot of the luminescence for increasing voltage, the L-V characteristics, of the transparent up- conversion device of Figure 7 with a Mg:Ag (1 1 nm)/Alq3 (50 nm) top electrode.
As needed, in any portion of the IR driven AMOLED, a thin film encapsulant can be employed, including, but not limited to: Si02; Si3N4; SiOxNy; A1203; A10xNy; Si02/polymer/Si02; or Al203/polymer/Al203.
In an embodiment of the invention, as shown in Figure 10, the IR backlight panel generates and transmits IR radiation through a polarizer and subsequently into an array of pixels of the AMLCD panel that are addressed in rows and columns, as shown in Figure
I I . The IR backlight panel emits infrared radiation, which may be any electromagnetic radiation provided as one or more wavelengths longer than the nominal edge of visible red light, > 0.74 μιη. Each pixel of the AMLCD panel is addressed by a data line and a gate line on the lower substrate (opposite the viewing face of the AMOLED) connected with a thin film transistor (TFT) used to control current to the individual transparent pixel electrodes adjacent to a liquid crystal layer that rearranges due to the electric field generated between the pixel electrode and a common IR transparent electrode residing on the top (viewing face) substrate, to adjust the transmittance of the IR light through the liquid crystal layer. The common electrode can be delineated with a black matrix that is aligned around the area above the pixel electrode to further optically separate the pixels. The IR radiation that is transmitted from the pixels of the AMLCD panel addresses IROLEDs that produce the color pixels of the IR driven AMOLED, which emits any combination of primary colors that permit a full color display, for example, a multiplicity of IROLEDs that emit, for example: red, green, and blue (RGB); red, yellow, and blue (RYB), red, yellow, green, and blue (RYGB) or cyan, magenta, and yellow (CMY). Although the disclosure herein will typically reference the RGB color scheme, embodiments of the invention are not so limited, and one skilled in the art can readily envision materials that can be incorporated to the IROLED panels to achieve a full color display, according to embodiments of the invention.
The pixelated IR driven AMOLED comprises an array of IROLEDs, according to an embodiment of the invention, where the cross-section of the IROLED panel is shown in Figure 12 and results in a viewing (top) face that is shown in Figure 13. As shown in Figure 13, an array of IROLEDs is formed between two electrodes. The IROLEDs can be formed by subsequent deposition of the R, B, and G emitting materials as an array of pixels on a visible light transmissive electrode on a substrate, for example, by vacuum thermal evaporation (VTE) using a fine metal mask (FMM), as illustrated in Figure 14. Subsequent deposition of desired layers, including IR sensitive materials, the light emitting materials, and a transmissive electrode layer, results in an array of IROLEDs that forms the pixelated IROLED panel for an IR driven AMOLED, for example, as shown in Figure 15, upon alignment of the pixel array of the IROLED panel with the pixels of the AMLCD panel, which are shown as offset components in Figure 16, for ultimate alignment and attachment of the two panels.
In another embodiment of the invention, the IR driven AMOLED, as shown in Figure 17, includes, as shown in Figure 18, a non-pixelated stack of red, green, and blue IROLEDs. Each of the non-pixelated RGB IROLEDs is addressed by a field sequential drive such that each layer is active for a sub-frame during a viewing frame, as illustrated in Figure 19. In this manner, the full color images result from sequentially turning on of red, green, and blue light at each of the non-pixelated RGB IROLEDs where: during a red sub-frame, only the red IROLED is on-biased by a voltage, for example, 10 V; during the green sub-frame, only the green IROLED is on-biased; and during the blue sub-frame, only the blue IROLED is on-biased, while the other two color IROLED s reside in an off- bias, 0 V, such that only the desired color IROLED is emitted in the area above a pixel of the AMLCD panel that delivers IR radiation to the on-biased IROLED. The combination of the color output during the frame is perceived as a full color image from the IR driven AMOLED with the non-pixelated IROLED panel. In embodiments of the invention, with an IRLED employing only one emitting IR wavelength, for example, 750 nm, the intensity of the IR radiation that strikes a red IROLED need not be equal to that which strikes the green or blue IROLEDs, but can be controlled by the AMLCD panel, as indicated in Figure 19 where, for illustration, the intensity of the IR radiation provided during the red sub-frame is less than the intensity provided during the green sub-frame, which is still less than the intensity of IR radiation provided during the blue sub-frame. This relationship is for illustrative purposes and the IR intensity that is applied can be of any order; for example, red may require greater intensity than blue, which requires a lesser intensity that green, or any other combination of like or unlike intensities. The intensity of the IR radiation can be controlled by the portion of IR allowed through the liquid crystal portion of the AMLCD panel due to the degree of alignment of the liquid crystals or to the quantity of IR light provided to the AMLCD panel from the IRLED back panel, which can be controlled by the bias applied to the IRLEDs or the number of IRLEDs biased. Alternatively, the IR radiation intensity can be constant and the red IROLED, green IROLED and blue IROLED can have different bias when on.
In another embodiment of the invention, the IR backlight panel can comprise more than one IRLED, such that different IRLEDs emit different wavelengths. The wavelength emitted can be paired to an IR sensitizing layer of the IROLED panel. For example, as shown in Figure 20, the different RGB IROLEDs can be addressed by different IR wavelengths in different sub-frames. Again, as required for optimal color and resolution of the display, the bias to the IRLEDs, IROLEDs, AMLCD pixels, or any combination thereof can be of like or different values.
In another embodiment of the invention, the a RGB full color IR driven
AMOLED display has a pixelated IROLED panel situated directly on the AMLCD panel, as shown in Figure 21, where the top of the AMLCD panel and the bottom of the IROLED panel share a common substrate. A buffer layer, or an IR pass visible mirror, which also functions as the buffer layer, is formed on the top polarizer of the AMLCD and separates the polarizer from the electrode of the IROLED panel, for example, and ITO electrode. The buffer layer can protect the polarizer during deposition of the electrode. Alternatively, no buffer layer is required when the top polarizer of the AMLCD panel is situated within the AMLCD panel. Figure 22 shows an IR driven AMOLED where the polarizer is within the AMLCD panel and the electrode of the IROLED is situated upon a buffer or an IR pass visible mirror. In another embodiment of the invention, the IROLED panel can be non-pixelated and situated directly on the AMLCD panel, as shown in Figures 23 and 24, for devices requiring a buffer layer (or an IR pass visible mirror) or placement of the top polarizer within the AMLCD panel, respectively.
In another embodiment of the invention, the AMLCD panel has an IR reflective bottom polarizer, which is situated between the IRLED backlight panel and the AMLCD panel, is a wire-grid polarizer (WGP) or other reflective polarizer. As shown in Figure 25, in contrast to a common polarizer where as much as 50 percent of the IR radiation is absorbed, because the WGP reflects as much as 50 percent of the IR radiation, as shown in Figure 25, the reflected IR light is again transmitted to the WGP, which allows a reduction of the power consumed when transmitting an equivalent amount of IR radiation to the AMLCD panel relative to a device that uses a polarizer that is not reflective.
In another embodiment of the invention, the top substrate of the IROLED in the IR driven AMOLED is not provided as a rigid substrate, such as glass, but comprises a thin film encapsulant that allows a reduction in thickness of the IR driven AMOLED. Any of the IR driven AMOLEDs described above, and illustrated in figures with a glass cap and getter on the IROLED panel, can be reduced in thickness by using a thin film encapsulant layer in place of the cap and getter. Figures 26-31 illustrate IR driven AMOLED devices, according to embodiments of the invention, which have thin film encapsulation of the IROLED panel of the devices.
In another embodiment of the invention, the IROLED panel of the devices resides within the AMLCD panel, where a thin film encapsulant is used to separate the IROLED panel from the common electrode and top polarizer of the AMLCD panel, where the IROLED panel is situated beneath the top substrate of the AMLCD panel, which is the viewing face of the device. The IROLED panel can be pixelated, as shown in Figure 32, or non-pixelated, as shown in Figure 25.
In an embodiment of the invention, a semi-transparent thin metal electrode is used in the top (viewing face) of the IROLED panel. The thin metal film electrode provides a weak cavity effect that increases color purity to provide an improved color gamut. The semi-transparent thin metal electrode can be used in an IROLED panel that is part of any of the devices described above, as shown in: Figure 34 with a pixelated IROLED panel similar to that shown in Figure 20; Figure 35 with a pixelated IROLED panel similar to that shown in Figure 21 ; or as shown in Figure 36 where the IROLED panel is within the AMLCD panel in a manner similar to that shown in Figure 29 but where the top electrode of the IROLED panel is semitransparent rather than transparent. Although illustrated in Figures 34-36 with pixelated IROLED panels that employ thin film encapsulant comprising layers, the semi-transparent thin metal electrode can be included in any IR driven AMOLED device including, but not limited to, those that are non-pixelated, those that include a glass cap and a getter, and/or those where the IROLED panel and the AMLCD panel do not share a common substrate.
As shown in Figures 15, 17, 26, and 27, a black matrix can be included to isolate pixels and to aid in the alignment of pixels in the pixelated IROLED array component and the AMLCD panel. Although devices can be constructed without a black matrix, as illustrated in Figures 26-25 (and 28-36 where a common substrate is included for the IROLED panel and AMLCD panel), it is often advantageous to include one or more black matrixes in these devices. In embodiments of the invention, the black matrix can be placed on the common electrode of the AMLCD panel with a pixelated IROLED panel, as shown in Figures 37-39, on the common electrode of the AMLCD panel with a non- pixelated IROLED panel, as shown in Figure 40-42, on an electrode of a pixelated IROLED panel, as shown in Figure 44, or on an electrode of a non-pixelated IROLED panel, as shown in Figure 37. In other embodiments of the invention, a plurality of black matrixes can be placed: on the common electrode of the AMLCD panel and an electrode of a pixelated IROLED panel, as shown in Figures 46 and 47; or on the common electrode of the AMLCD panel and an electrode of a non-pixelated IROLED panel, as shown in Figures 48 and 49. The IRLED backlight panel can or cannot comprise a matrix of IRLEDs in the manner that a conventional LED backlight panel does or doesn't comprise a matrix of visible white light LEDs.
The AMOLEDs, according to embodiments of the invention, permit the fabrication of large sized devices at significantly lower prices than current AMOLEDs. The AMOLEDs, according to embodiments of the invention, can be used as consumer products, such as wide screen televisions and computer displays.
It should be understood that the examples and embodiments described herein are for illustrative purposes only and that various modifications or changes in light thereof will be suggested to persons skilled in the art and are to be included within the spirit and purview of this application.

Claims

CLAIMS We claim:
1. An infrared (IR) driven active matrix organic light emitting display (IR driven AMOLED), comprising: a pixelated active matrix liquid crystal display (AMLCD) panel comprising an IR backlight panel; and an IR activated organic light emitting diode (IROLED) panel, wherein the IROLED panel is either pixelated or non-pixelated, and wherein the IR driven AMOLED displays a multiplicity of pixels of different primary colors.
2. The IR driven AMOLED of claim 1, wherein the AMLCD panel comprises a bottom polarizer on a face proximal to the IR backlight panel, a thin film transistor (TFT) backplate, a liquid crystal (LC) segment, a top common electrode proximal to the IROLED panel, and a top polarizer proximal to the IROLED panel.
3. The IR driven AMOLED of claim 2, wherein the AMLCD panel further comprises a black matrix on a face of the common electrode.
4. The AMOLED of claim 2, wherein the TFT backplate is a hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) backplate.
5. The AMOLED of claim 2, wherein the LC segment comprises a LC, a LC alignment layer, a spacer, and a sealant,
6. The AMOLED of claim 1, wherein the IR backlight panel comprises an array of IR light emitting diodes (IR LEDs).
7. The IR driven AMOLED of claim 6, wherein the array of IR LEDs comprises a plurality of a first IR LED of a first wavelength for activation of a first color of the IROLED panel, a plurality of a second IRLED of a second wavelength for activation of a second color of the IROLED panel, and a plurality of a third IRLED of a third wavelength for activation of a third color of the IROLED panel.
8. The IR driven AMOLED of claim 1 , wherein the IR backlight panel comprises a reflective polarizer between the IR backlight panel and the AMLCD panel.
9. The IR driven AMOLED of claim 1 , wherein the IROLED panel comprises IROLEDs that comprise an IR light transparent anode, a hole blocking layer, an IR sensitizing layer, a hole transport layer, a light emitting layer, an electron transport layer, and a visible light transparent or semitransparent cathode.
10. The IR driven AMOLED of claim 9, wherein the transparent cathode has an antireflective coating on the viewing face of the transparent cathode.
1 1. The AMOLED of claim 10, wherein the transparent cathode and the antireflective coating comprise a Mg:Ag/Alq3 stack layer.
12. The AMOLED of claim 11 , wherein the Mg:Ag/Alq3 stack layer has a 10: 1 Mg:Ag composition with a thickness < 30nm and an Alq3 layer with a thickness < 200 nm.
13. The IR driven AMOLED of claim 8, wherein the IROLED further comprises an IR pass visible blocking layer.
14. The AMOLED of claim 13, wherein the IR pass visible blocking layer is a multi- dielectric stack of layers consisting of [Ta205(x nm)/Si02(y nm)]z where x is 10 to 100, y is 10 to 100 and z is 1 to 40.
15. The IR driven AMOLED of claim 8, wherein the semitransparent cathode comprises a thin metal electrode.
16. The IR driven AMOLED of claim 1, wherein the pixelated IROLED panel comprises an array of a multiplicity of IROLEDs that emit one of the different primary colors.
17. The IR driven AMOLED of claim 1 , wherein the non-pixelated IROLED panel comprises a multiplicity of stacked IROLEDs wherein, upon activation, each of the IROLEDs emits one of the different primary colors.
18. The IR driven AMOLED of claim 17, wherein the IR driven AMOLED is electronically configured to synchronize irradiation from the AMLCD panel with selective electronic addressing of one of the IROLED layers of the non-pixelated IROLED panel.
19. The IR driven AMOLED of claim 17, wherein the IR backlight panel comprises a multiplicity of IRLEDs of different IR wavelengths, each IR wavelength individually paired to an IROLED that emits one of the different primary colors.
20. The IR driven AMOLED of claim 1, wherein the AMLCD panel and the IROLED panel share a common substrate.
21. The IR driven AMOLED of claim 20, wherein the IROLED panel is situated between a common electrode of the AMLCD panel and the common substrate.
22. The IR driven AMOLED of claim 1, wherein the pixels are delineated by at least one black matrix situated on a common electrode of the AMLCD panel and/or an electrode of the IROLED panel.
23. The AMOLED of claim 1, further comprising an array of lenses to direct IR radiation from the AMLCD into the IR activated OLEDs.
PCT/US2012/056814 2011-09-23 2012-09-24 Infrared driven oled display WO2013044200A1 (en)

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