KR101495230B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

Info

Publication number
KR101495230B1
KR101495230B1 KR20130093351A KR20130093351A KR101495230B1 KR 101495230 B1 KR101495230 B1 KR 101495230B1 KR 20130093351 A KR20130093351 A KR 20130093351A KR 20130093351 A KR20130093351 A KR 20130093351A KR 101495230 B1 KR101495230 B1 KR 101495230B1
Authority
KR
South Korea
Prior art keywords
gas
gas supply
supply plate
flow path
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR20130093351A
Other languages
English (en)
Korean (ko)
Other versions
KR20140049456A (ko
Inventor
겐에츠 요코가와
마사히토 모리
다카오 아라세
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히다치 하이테크놀로지즈 filed Critical 가부시키가이샤 히다치 하이테크놀로지즈
Publication of KR20140049456A publication Critical patent/KR20140049456A/ko
Application granted granted Critical
Publication of KR101495230B1 publication Critical patent/KR101495230B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR20130093351A 2012-10-17 2013-08-06 플라즈마 처리 장치 Active KR101495230B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-229710 2012-10-17
JP2012229710A JP2014082354A (ja) 2012-10-17 2012-10-17 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20140049456A KR20140049456A (ko) 2014-04-25
KR101495230B1 true KR101495230B1 (ko) 2015-02-24

Family

ID=50474310

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20130093351A Active KR101495230B1 (ko) 2012-10-17 2013-08-06 플라즈마 처리 장치

Country Status (3)

Country Link
US (1) US10665448B2 (https=)
JP (1) JP2014082354A (https=)
KR (1) KR101495230B1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9100205B1 (en) * 2011-07-20 2015-08-04 Google Inc. System for validating site configuration based on real-time analytics data
JP6078419B2 (ja) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
JP6501493B2 (ja) * 2014-11-05 2019-04-17 東京エレクトロン株式会社 プラズマ処理装置
JP6681228B2 (ja) * 2016-03-14 2020-04-15 株式会社Ｓｃｒｅｅｎホールディングス エッチング装置及びエッチング方法
JP6474943B2 (ja) * 2016-05-27 2019-02-27 東芝三菱電機産業システム株式会社 活性ガス生成装置
US10256003B2 (en) 2017-01-31 2019-04-09 Plansee Japan Ltd. Blind-vented electrode
JP6772117B2 (ja) 2017-08-23 2020-10-21 株式会社日立ハイテク エッチング方法およびエッチング装置
JP2019109980A (ja) * 2017-12-15 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10984987B2 (en) * 2018-10-10 2021-04-20 Lam Research Corporation Showerhead faceplate having flow apertures configured for hollow cathode discharge suppression
KR102386601B1 (ko) 2019-04-22 2022-04-15 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 장치
JP7110492B2 (ja) 2020-06-16 2022-08-01 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
JP7523553B2 (ja) 2021-10-21 2024-07-26 株式会社日立ハイテク エッチング方法およびエッチング装置
JP7611127B2 (ja) * 2021-12-13 2025-01-09 東京エレクトロン株式会社 上部電極及びプラズマ処理装置
US12581881B2 (en) 2022-03-07 2026-03-17 Hitachi High-Tech Corporation Plasma processing method
KR102826180B1 (ko) 2022-04-26 2025-06-27 주식회사 히타치하이테크 플라스마 처리 방법
KR102815089B1 (ko) 2022-04-28 2025-06-04 주식회사 히타치하이테크 에칭 방법
US12555747B2 (en) * 2022-07-01 2026-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and systems for dry etching

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100224461B1 (ko) * 1995-04-20 1999-10-15 히가시 데쓰로 샤워헤드 및 이를 이용한 성막장치
KR20090011978A (ko) * 2007-07-27 2009-02-02 주식회사 아이피에스 샤워헤드 및 그를 가지는 반도체처리장치
KR20100055370A (ko) * 1999-12-10 2010-05-26 도쿄엘렉트론가부시키가이샤 용사막이 형성된 부재 및 에칭 장치
KR101109069B1 (ko) * 2009-06-23 2012-01-31 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US6004885A (en) * 1991-12-26 1999-12-21 Canon Kabushiki Kaisha Thin film formation on semiconductor wafer
KR100492258B1 (ko) * 1996-10-11 2005-09-02 가부시키가이샤 에바라 세이사꾸쇼 반응가스분출헤드
US6110556A (en) * 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
US6173673B1 (en) * 1999-03-31 2001-01-16 Tokyo Electron Limited Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber
US6206972B1 (en) * 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
JP3946641B2 (ja) * 2001-01-22 2007-07-18 東京エレクトロン株式会社 処理装置
KR100400044B1 (ko) * 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US7371436B2 (en) * 2003-08-21 2008-05-13 Tokyo Electron Limited Method and apparatus for depositing materials with tunable optical properties and etching characteristics
JP2006287162A (ja) 2005-04-05 2006-10-19 Nisshinbo Ind Inc 複合型電極板、それの使用方法及びそれを装着したプラズマエッチング装置
JP4557814B2 (ja) 2005-06-09 2010-10-06 パナソニック株式会社 プラズマ処理装置
JP4819411B2 (ja) * 2005-06-22 2011-11-24 東京エレクトロン株式会社 プラズマ処理装置
US20060288934A1 (en) * 2005-06-22 2006-12-28 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
WO2007026889A1 (ja) * 2005-09-01 2007-03-08 Matsushita Electric Industrial Co., Ltd. プラズマ処理装置、プラズマ処理方法、これに用いられる誘電体窓及びその製造方法
KR101139165B1 (ko) * 2006-10-19 2012-04-26 도쿄엘렉트론가부시키가이샤 Ｔｉ계 막의 성막 방법 및 기억 매체
JP5010234B2 (ja) 2006-10-23 2012-08-29 北陸成型工業株式会社 ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法
JP5179389B2 (ja) * 2008-03-19 2013-04-10 東京エレクトロン株式会社 シャワーヘッド及び基板処理装置
JP5520455B2 (ja) * 2008-06-11 2014-06-11 東京エレクトロン株式会社 プラズマ処理装置
JP5268626B2 (ja) * 2008-12-26 2013-08-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2010263049A (ja) * 2009-05-01 2010-11-18 Ulvac Japan Ltd ドライエッチング装置
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
JP5702964B2 (ja) * 2010-07-27 2015-04-15 日本発條株式会社 アース電極の接点及びその製造方法
JP5850236B2 (ja) * 2012-01-20 2016-02-03 アイシン精機株式会社 カーボンナノチューブの製造装置及びカーボンナノチューブの製造方法
US9982343B2 (en) * 2012-12-14 2018-05-29 Applied Materials, Inc. Apparatus for providing plasma to a process chamber

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100224461B1 (ko) * 1995-04-20 1999-10-15 히가시 데쓰로 샤워헤드 및 이를 이용한 성막장치
KR20100055370A (ko) * 1999-12-10 2010-05-26 도쿄엘렉트론가부시키가이샤 용사막이 형성된 부재 및 에칭 장치
KR20090011978A (ko) * 2007-07-27 2009-02-02 주식회사 아이피에스 샤워헤드 및 그를 가지는 반도체처리장치
KR101109069B1 (ko) * 2009-06-23 2012-01-31 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리장치

Also Published As

Publication number Publication date
JP2014082354A (ja) 2014-05-08
US10665448B2 (en) 2020-05-26
US20140102640A1 (en) 2014-04-17
KR20140049456A (ko) 2014-04-25

Similar Documents

Publication Publication Date Title
KR101495230B1 (ko) 플라즈마 처리 장치
US8222157B2 (en) Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
KR101731017B1 (ko) 정전 척용 기판 및 정전 척
CN108335963B (zh) 等离子体处理装置
EP2490245B1 (en) Upper electrode and plasma processing apparatus
US8636871B2 (en) Plasma processing apparatus, plasma processing method and storage medium
JP5819154B2 (ja) プラズマエッチング装置
US20180122680A1 (en) Electrostatic chuck assembly and semiconductor manufacturing apparatus including the same
US11309167B2 (en) Active gas generation apparatus and deposition processing apparatus
WO2009133193A1 (en) Plasma treatment apparatus and method for plasma-assisted treatment of substrates
KR101109069B1 (ko) 플라즈마처리장치
JP2016506592A (ja) 均一なプラズマ密度を有する容量結合プラズマ装置
CN109935511A (zh) 等离子体处理装置
JP6595335B2 (ja) プラズマ処理装置
TW201338012A (zh) 用於等離子體處理裝置的可調節約束裝置
JP7583663B2 (ja) 上部電極アセンブリ
JP6406631B2 (ja) プラズマ処理装置
KR100903306B1 (ko) 진공처리장치
TWI834075B (zh) 約束環組件、電漿處理裝置及其排氣控制方法
JP5367000B2 (ja) プラズマ処理装置
KR20100039793A (ko) 진공처리장치
JP6368808B2 (ja) プラズマ処理装置
JP4311828B2 (ja) プラズマ処理装置
KR102684970B1 (ko) 포커스 링을 포함하는 용량성 결합 플라즈마 기판 처리 장치 및 이를 이용한 기판 처리 방법
JP4753306B2 (ja) プラズマ処理装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20180119

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000