JP2014082354A - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP2014082354A
JP2014082354A JP2012229710A JP2012229710A JP2014082354A JP 2014082354 A JP2014082354 A JP 2014082354A JP 2012229710 A JP2012229710 A JP 2012229710A JP 2012229710 A JP2012229710 A JP 2012229710A JP 2014082354 A JP2014082354 A JP 2014082354A
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JP
Japan
Prior art keywords
gas
gas supply
processing apparatus
plasma processing
hole
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Pending
Application number
JP2012229710A
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English (en)
Japanese (ja)
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JP2014082354A5 (https=
Inventor
Katanobu Yokogawa
賢悦 横川
Masashi Mori
政士 森
Takao Arase
高男 荒瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2012229710A priority Critical patent/JP2014082354A/ja
Priority to US13/953,924 priority patent/US10665448B2/en
Priority to KR20130093351A priority patent/KR101495230B1/ko
Publication of JP2014082354A publication Critical patent/JP2014082354A/ja
Publication of JP2014082354A5 publication Critical patent/JP2014082354A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2012229710A 2012-10-17 2012-10-17 プラズマ処理装置 Pending JP2014082354A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012229710A JP2014082354A (ja) 2012-10-17 2012-10-17 プラズマ処理装置
US13/953,924 US10665448B2 (en) 2012-10-17 2013-07-30 Plasma processing apparatus
KR20130093351A KR101495230B1 (ko) 2012-10-17 2013-08-06 플라즈마 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012229710A JP2014082354A (ja) 2012-10-17 2012-10-17 プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017015281A Division JP6368808B2 (ja) 2017-01-31 2017-01-31 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2014082354A true JP2014082354A (ja) 2014-05-08
JP2014082354A5 JP2014082354A5 (https=) 2015-09-17

Family

ID=50474310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012229710A Pending JP2014082354A (ja) 2012-10-17 2012-10-17 プラズマ処理装置

Country Status (3)

Country Link
US (1) US10665448B2 (https=)
JP (1) JP2014082354A (https=)
KR (1) KR101495230B1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016091821A (ja) * 2014-11-05 2016-05-23 東京エレクトロン株式会社 プラズマ処理装置
JP2017168526A (ja) * 2016-03-14 2017-09-21 株式会社Ｓｃｒｅｅｎホールディングス エッチング装置及びエッチング方法
JP2018125271A (ja) * 2017-01-31 2018-08-09 プランゼージャパン株式会社 ブラインド通気性電極
CN109196959A (zh) * 2016-05-27 2019-01-11 东芝三菱电机产业系统株式会社 活性气体生成装置
JP2022512675A (ja) * 2018-10-10 2022-02-07 ラム リサーチ コーポレーション ホローカソード放電抑制用に構成されたフローアパーチャを有するシャワーヘッドフェースプレート
JP2023087245A (ja) * 2021-12-13 2023-06-23 東京エレクトロン株式会社 上部電極及びプラズマ処理装置

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US9100205B1 (en) * 2011-07-20 2015-08-04 Google Inc. System for validating site configuration based on real-time analytics data
JP6078419B2 (ja) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
JP6772117B2 (ja) 2017-08-23 2020-10-21 株式会社日立ハイテク エッチング方法およびエッチング装置
JP2019109980A (ja) * 2017-12-15 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR102386601B1 (ko) 2019-04-22 2022-04-15 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 장치
JP7110492B2 (ja) 2020-06-16 2022-08-01 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
JP7523553B2 (ja) 2021-10-21 2024-07-26 株式会社日立ハイテク エッチング方法およびエッチング装置
US12581881B2 (en) 2022-03-07 2026-03-17 Hitachi High-Tech Corporation Plasma processing method
KR102826180B1 (ko) 2022-04-26 2025-06-27 주식회사 히타치하이테크 플라스마 처리 방법
KR102815089B1 (ko) 2022-04-28 2025-06-04 주식회사 히타치하이테크 에칭 방법
US12555747B2 (en) * 2022-07-01 2026-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and systems for dry etching

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WO2007026889A1 (ja) * 2005-09-01 2007-03-08 Matsushita Electric Industrial Co., Ltd. プラズマ処理装置、プラズマ処理方法、これに用いられる誘電体窓及びその製造方法
JP2008108796A (ja) * 2006-10-23 2008-05-08 Hokuriku Seikei Kogyo Kk ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法
JP2010263049A (ja) * 2009-05-01 2010-11-18 Ulvac Japan Ltd ドライエッチング装置
JP2011009249A (ja) * 2009-06-23 2011-01-13 Hitachi High-Technologies Corp プラズマ処理装置
JP2012028273A (ja) * 2010-07-27 2012-02-09 Nhk Spring Co Ltd アース電極の接点及びその製造方法

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JP5268626B2 (ja) * 2008-12-26 2013-08-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
JP5850236B2 (ja) * 2012-01-20 2016-02-03 アイシン精機株式会社 カーボンナノチューブの製造装置及びカーボンナノチューブの製造方法
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WO2007026889A1 (ja) * 2005-09-01 2007-03-08 Matsushita Electric Industrial Co., Ltd. プラズマ処理装置、プラズマ処理方法、これに用いられる誘電体窓及びその製造方法
JP2008108796A (ja) * 2006-10-23 2008-05-08 Hokuriku Seikei Kogyo Kk ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法
JP2010263049A (ja) * 2009-05-01 2010-11-18 Ulvac Japan Ltd ドライエッチング装置
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016091821A (ja) * 2014-11-05 2016-05-23 東京エレクトロン株式会社 プラズマ処理装置
JP2017168526A (ja) * 2016-03-14 2017-09-21 株式会社Ｓｃｒｅｅｎホールディングス エッチング装置及びエッチング方法
CN109196959A (zh) * 2016-05-27 2019-01-11 东芝三菱电机产业系统株式会社 活性气体生成装置
JP2018125271A (ja) * 2017-01-31 2018-08-09 プランゼージャパン株式会社 ブラインド通気性電極
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JP2022512675A (ja) * 2018-10-10 2022-02-07 ラム リサーチ コーポレーション ホローカソード放電抑制用に構成されたフローアパーチャを有するシャワーヘッドフェースプレート
JP2023087245A (ja) * 2021-12-13 2023-06-23 東京エレクトロン株式会社 上部電極及びプラズマ処理装置

Also Published As

Publication number Publication date
KR101495230B1 (ko) 2015-02-24
US10665448B2 (en) 2020-05-26
US20140102640A1 (en) 2014-04-17
KR20140049456A (ko) 2014-04-25

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