KR101493130B1 - 산화루테늄막의 성막 방법 및 기억 매체 - Google Patents

산화루테늄막의 성막 방법 및 기억 매체 Download PDF

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KR101493130B1
KR101493130B1 KR20120123505A KR20120123505A KR101493130B1 KR 101493130 B1 KR101493130 B1 KR 101493130B1 KR 20120123505 A KR20120123505 A KR 20120123505A KR 20120123505 A KR20120123505 A KR 20120123505A KR 101493130 B1 KR101493130 B1 KR 101493130B1
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gas
film
compound
ruthenium
ruo
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KR20130049743A (ko
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나오타카 노로
히로아키 아시자와
준야 하라
다카아키 이와이
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
KR20120123505A 2011-11-04 2012-11-02 산화루테늄막의 성막 방법 및 기억 매체 Active KR101493130B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011242630 2011-11-04
JPJP-P-2011-242630 2011-11-04
JP2012214090A JP6114525B2 (ja) 2011-11-04 2012-09-27 酸化ルテニウム膜の成膜方法
JPJP-P-2012-214090 2012-09-27

Publications (2)

Publication Number Publication Date
KR20130049743A KR20130049743A (ko) 2013-05-14
KR101493130B1 true KR101493130B1 (ko) 2015-02-12

Family

ID=48223863

Family Applications (1)

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KR20120123505A Active KR101493130B1 (ko) 2011-11-04 2012-11-02 산화루테늄막의 성막 방법 및 기억 매체

Country Status (4)

Country Link
US (1) US20130115367A1 (https=)
JP (1) JP6114525B2 (https=)
KR (1) KR101493130B1 (https=)
TW (1) TWI555871B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6118149B2 (ja) * 2013-03-21 2017-04-19 東京エレクトロン株式会社 ルテニウム膜の形成方法および記憶媒体
KR101628843B1 (ko) * 2014-02-24 2016-06-10 영남대학교 산학협력단 원자층 증착법에 의한 루테늄 박막 형성 방법
CN120937114A (zh) * 2023-04-13 2025-11-11 周星工程股份有限公司 形成钌氧化物膜的方法及制造包括钌氧化物膜的半导体装置的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303809B1 (en) * 1999-12-10 2001-10-16 Yun Chi Organometallic ruthenium and osmium source reagents for chemical vapor deposition
KR20040076709A (ko) * 2003-02-26 2004-09-03 삼성전자주식회사 루테늄 박막을 제조하는 방법 및 이를 이용한 ｍｉｍ캐패시터의 제조방법
KR20100022441A (ko) * 2008-08-19 2010-03-02 삼성전자주식회사 전구체 조성물, 박막 형성 방법, 이를 이용한 게이트 구조물의 제조 방법 및 커패시터의 제조 방법
KR20100048982A (ko) * 2002-04-18 2010-05-11 다나까 기낀조꾸 고교 가부시끼가이샤 Ｃｖｄ용 원료화합물 및 루테늄 또는 루테늄 화합물 박막의 화학기상 증착방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3224450B2 (ja) * 1993-03-26 2001-10-29 日本酸素株式会社 酸化ルテニウムの成膜方法
JP3676004B2 (ja) * 1996-11-28 2005-07-27 富士通株式会社 酸化ルテニウム膜の形成方法および半導体装置の製造方法
JP4152028B2 (ja) * 1999-01-25 2008-09-17 株式会社Ａｄｅｋａ ルテニウム系薄膜の製造方法
KR100727372B1 (ko) * 2001-09-12 2007-06-12 토소가부시키가이샤 루테늄착체, 그 제조방법 및 박막의 제조방법
US6784096B2 (en) * 2002-09-11 2004-08-31 Applied Materials, Inc. Methods and apparatus for forming barrier layers in high aspect ratio vias
US20070014919A1 (en) * 2005-07-15 2007-01-18 Jani Hamalainen Atomic layer deposition of noble metal oxides
JP4746141B1 (ja) * 2010-06-24 2011-08-10 田中貴金属工業株式会社 化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303809B1 (en) * 1999-12-10 2001-10-16 Yun Chi Organometallic ruthenium and osmium source reagents for chemical vapor deposition
KR20100048982A (ko) * 2002-04-18 2010-05-11 다나까 기낀조꾸 고교 가부시끼가이샤 Ｃｖｄ용 원료화합물 및 루테늄 또는 루테늄 화합물 박막의 화학기상 증착방법
KR20040076709A (ko) * 2003-02-26 2004-09-03 삼성전자주식회사 루테늄 박막을 제조하는 방법 및 이를 이용한 ｍｉｍ캐패시터의 제조방법
KR20100022441A (ko) * 2008-08-19 2010-03-02 삼성전자주식회사 전구체 조성물, 박막 형성 방법, 이를 이용한 게이트 구조물의 제조 방법 및 커패시터의 제조 방법

Also Published As

Publication number Publication date
TW201333249A (zh) 2013-08-16
JP6114525B2 (ja) 2017-04-12
JP2013117067A (ja) 2013-06-13
KR20130049743A (ko) 2013-05-14
US20130115367A1 (en) 2013-05-09
TWI555871B (zh) 2016-11-01

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