JP6114525B2 - 酸化ルテニウム膜の成膜方法 - Google Patents

酸化ルテニウム膜の成膜方法 Download PDF

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Publication number
JP6114525B2
JP6114525B2 JP2012214090A JP2012214090A JP6114525B2 JP 6114525 B2 JP6114525 B2 JP 6114525B2 JP 2012214090 A JP2012214090 A JP 2012214090A JP 2012214090 A JP2012214090 A JP 2012214090A JP 6114525 B2 JP6114525 B2 JP 6114525B2
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JP
Japan
Prior art keywords
film
gas
compound
ruthenium
forming
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Active
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JP2012214090A
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English (en)
Japanese (ja)
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JP2013117067A (ja
JP2013117067A5 (https=
Inventor
尚孝 野呂
尚孝 野呂
芦澤　宏明
宏明 芦澤
隼也 原
隼也 原
隆晃 岩井
隆晃 岩井
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2012214090A priority Critical patent/JP6114525B2/ja
Priority to US13/661,514 priority patent/US20130115367A1/en
Priority to TW101140783A priority patent/TWI555871B/zh
Priority to KR20120123505A priority patent/KR101493130B1/ko
Publication of JP2013117067A publication Critical patent/JP2013117067A/ja
Publication of JP2013117067A5 publication Critical patent/JP2013117067A5/ja
Application granted granted Critical
Publication of JP6114525B2 publication Critical patent/JP6114525B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
JP2012214090A 2011-11-04 2012-09-27 酸化ルテニウム膜の成膜方法 Active JP6114525B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012214090A JP6114525B2 (ja) 2011-11-04 2012-09-27 酸化ルテニウム膜の成膜方法
US13/661,514 US20130115367A1 (en) 2011-11-04 2012-10-26 Method for forming ruthenium oxide film
TW101140783A TWI555871B (zh) 2011-11-04 2012-11-02 Method for film formation of ruthenium oxide film
KR20120123505A KR101493130B1 (ko) 2011-11-04 2012-11-02 산화루테늄막의 성막 방법 및 기억 매체

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011242630 2011-11-04
JP2011242630 2011-11-04
JP2012214090A JP6114525B2 (ja) 2011-11-04 2012-09-27 酸化ルテニウム膜の成膜方法

Publications (3)

Publication Number Publication Date
JP2013117067A JP2013117067A (ja) 2013-06-13
JP2013117067A5 JP2013117067A5 (https=) 2015-10-15
JP6114525B2 true JP6114525B2 (ja) 2017-04-12

Family

ID=48223863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012214090A Active JP6114525B2 (ja) 2011-11-04 2012-09-27 酸化ルテニウム膜の成膜方法

Country Status (4)

Country Link
US (1) US20130115367A1 (https=)
JP (1) JP6114525B2 (https=)
KR (1) KR101493130B1 (https=)
TW (1) TWI555871B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6118149B2 (ja) * 2013-03-21 2017-04-19 東京エレクトロン株式会社 ルテニウム膜の形成方法および記憶媒体
KR101628843B1 (ko) * 2014-02-24 2016-06-10 영남대학교 산학협력단 원자층 증착법에 의한 루테늄 박막 형성 방법
CN120937114A (zh) * 2023-04-13 2025-11-11 周星工程股份有限公司 形成钌氧化物膜的方法及制造包括钌氧化物膜的半导体装置的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3224450B2 (ja) * 1993-03-26 2001-10-29 日本酸素株式会社 酸化ルテニウムの成膜方法
JP3676004B2 (ja) * 1996-11-28 2005-07-27 富士通株式会社 酸化ルテニウム膜の形成方法および半導体装置の製造方法
JP4152028B2 (ja) * 1999-01-25 2008-09-17 株式会社Ａｄｅｋａ ルテニウム系薄膜の製造方法
US6303809B1 (en) * 1999-12-10 2001-10-16 Yun Chi Organometallic ruthenium and osmium source reagents for chemical vapor deposition
KR100727372B1 (ko) * 2001-09-12 2007-06-12 토소가부시키가이샤 루테늄착체, 그 제조방법 및 박막의 제조방법
JP4097979B2 (ja) * 2002-04-18 2008-06-11 田中貴金属工業株式会社 Ｃｖｄ用原料化合物及びルテニウム又はルテニウム化合物薄膜の化学気相蒸着方法
US6784096B2 (en) * 2002-09-11 2004-08-31 Applied Materials, Inc. Methods and apparatus for forming barrier layers in high aspect ratio vias
KR100505674B1 (ko) * 2003-02-26 2005-08-03 삼성전자주식회사 루테늄 박막을 제조하는 방법 및 이를 이용한 ｍｉｍ캐패시터의 제조방법
US20070014919A1 (en) * 2005-07-15 2007-01-18 Jani Hamalainen Atomic layer deposition of noble metal oxides
US20100047988A1 (en) * 2008-08-19 2010-02-25 Youn-Joung Cho Methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor
JP4746141B1 (ja) * 2010-06-24 2011-08-10 田中貴金属工業株式会社 化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法

Also Published As

Publication number Publication date
TW201333249A (zh) 2013-08-16
JP2013117067A (ja) 2013-06-13
KR101493130B1 (ko) 2015-02-12
KR20130049743A (ko) 2013-05-14
US20130115367A1 (en) 2013-05-09
TWI555871B (zh) 2016-11-01

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