KR101483338B1 - 결정 방법, 기억 매체 및 정보 처리 장치 - Google Patents

결정 방법, 기억 매체 및 정보 처리 장치 Download PDF

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KR101483338B1
KR101483338B1 KR20120072788A KR20120072788A KR101483338B1 KR 101483338 B1 KR101483338 B1 KR 101483338B1 KR 20120072788 A KR20120072788 A KR 20120072788A KR 20120072788 A KR20120072788 A KR 20120072788A KR 101483338 B1 KR101483338 B1 KR 101483338B1
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South Korea
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optical system
parameter
aberration
projection optical
mask
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Korean (ko)
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KR20130005241A (ko
Inventor
유이찌 교다
고지 미까미
고오이찌로오 쯔지따
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/72—Controlling or varying light intensity, spectral composition, or exposure time in photographic printing apparatus
    • G03B27/725—Optical projection devices wherein the contrast is controlled electrically (e.g. cathode ray tube masking)
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR20120072788A 2011-07-05 2012-07-04 결정 방법, 기억 매체 및 정보 처리 장치 Active KR101483338B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-149496 2011-07-05
JP2011149496A JP5835968B2 (ja) 2011-07-05 2011-07-05 決定方法、プログラム及び露光方法

Publications (2)

Publication Number Publication Date
KR20130005241A KR20130005241A (ko) 2013-01-15
KR101483338B1 true KR101483338B1 (ko) 2015-01-15

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KR20120072788A Active KR101483338B1 (ko) 2011-07-05 2012-07-04 결정 방법, 기억 매체 및 정보 처리 장치

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US (1) US9551926B2 (enExample)
JP (1) JP5835968B2 (enExample)
KR (1) KR101483338B1 (enExample)
CN (1) CN102866589B (enExample)
TW (1) TWI460553B (enExample)

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US9690189B2 (en) 2013-06-21 2017-06-27 Hoya Corporation Mask blank substrate, mask blank, transfer mask, and method of manufacturing semiconductor device
JP6266286B2 (ja) * 2013-09-27 2018-01-24 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び半導体デバイスの製造方法
DE102013219986A1 (de) 2013-10-02 2015-04-02 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie
WO2015182788A1 (ja) * 2014-05-30 2015-12-03 株式会社ニコン リソグラフィシステム、シミュレーション装置、及びパターン形成方法
US10428236B2 (en) * 2014-07-07 2019-10-01 Tosoh Corporation Polyurethane urea resin composition exhibiting UV-absorption-agent resistance, moulded body using said composition, and coating material
JP6033987B1 (ja) * 2014-12-19 2016-11-30 Hoya株式会社 マスクブランク用基板、マスクブランク及びこれらの製造方法、転写用マスクの製造方法並びに半導体デバイスの製造方法
CN107290935B (zh) 2016-03-31 2019-01-29 上海微电子装备（集团）股份有限公司 一种光强调制方法
JP6730850B2 (ja) 2016-06-01 2020-07-29 キヤノン株式会社 露光条件の決定方法、プログラム、情報処理装置、露光装置、および物品製造方法
JP6554141B2 (ja) * 2017-05-26 2019-07-31 キヤノン株式会社 決定方法、露光方法、情報処理装置、プログラム及び物品の製造方法
JP2019028171A (ja) * 2017-07-27 2019-02-21 Hoya株式会社 フォトマスクの検査方法、フォトマスクの製造方法、及びフォトマスク検査装置
JP7105582B2 (ja) * 2018-03-09 2022-07-25 キヤノン株式会社 決定方法、露光方法、露光装置、物品の製造方法及びプログラム
CN109491083B (zh) * 2019-01-03 2021-03-12 杭州明视康眼科医院有限公司 一种用于角膜屈光矫正的高阶像差补偿方法
JP6924235B2 (ja) * 2019-09-19 2021-08-25 キヤノン株式会社 露光方法、露光装置、物品製造方法、および半導体デバイスの製造方法
US12235224B2 (en) * 2021-12-08 2025-02-25 Kla Corporation Process window qualification modulation layouts

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Also Published As

Publication number Publication date
US20130010272A1 (en) 2013-01-10
TWI460553B (zh) 2014-11-11
CN102866589B (zh) 2015-05-27
JP2013016710A (ja) 2013-01-24
JP5835968B2 (ja) 2015-12-24
KR20130005241A (ko) 2013-01-15
CN102866589A (zh) 2013-01-09
TW201305741A (zh) 2013-02-01
US9551926B2 (en) 2017-01-24

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