KR101468886B1 - 비휘발성 메모리를 위한 고속 감지 증폭기 어레이와 방법 - Google Patents

비휘발성 메모리를 위한 고속 감지 증폭기 어레이와 방법 Download PDF

Info

Publication number
KR101468886B1
KR101468886B1 KR1020107026690A KR20107026690A KR101468886B1 KR 101468886 B1 KR101468886 B1 KR 101468886B1 KR 1020107026690 A KR1020107026690 A KR 1020107026690A KR 20107026690 A KR20107026690 A KR 20107026690A KR 101468886 B1 KR101468886 B1 KR 101468886B1
Authority
KR
South Korea
Prior art keywords
node
memory cell
sensing
circuit
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020107026690A
Other languages
English (en)
Korean (ko)
Other versions
KR20110034588A (ko
Inventor
하오 타이 응구옌
만 렁 무이
승-필 이
팡린 장
치-밍 왕
Original Assignee
샌디스크 테크놀로지스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 샌디스크 테크놀로지스, 인코포레이티드 filed Critical 샌디스크 테크놀로지스, 인코포레이티드
Publication of KR20110034588A publication Critical patent/KR20110034588A/ko
Application granted granted Critical
Publication of KR101468886B1 publication Critical patent/KR101468886B1/ko
Assigned to 샌디스크 테크놀로지스 아이엔씨. reassignment 샌디스크 테크놀로지스 아이엔씨. 권리의 전부이전등록 Assignors: 샌디스크 테크놀로지스 엘엘씨
Assigned to 삼성전자주식회사 reassignment 삼성전자주식회사 권리의 전부이전등록 Assignors: 샌디스크 테크놀로지스 아이엔씨.
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
KR1020107026690A 2008-05-28 2009-04-01 비휘발성 메모리를 위한 고속 감지 증폭기 어레이와 방법 Active KR101468886B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/128,535 2008-05-28
US12/128,535 US7957197B2 (en) 2008-05-28 2008-05-28 Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node

Publications (2)

Publication Number Publication Date
KR20110034588A KR20110034588A (ko) 2011-04-05
KR101468886B1 true KR101468886B1 (ko) 2014-12-11

Family

ID=40674075

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107026690A Active KR101468886B1 (ko) 2008-05-28 2009-04-01 비휘발성 메모리를 위한 고속 감지 증폭기 어레이와 방법

Country Status (7)

Country Link
US (2) US7957197B2 (https=)
EP (1) EP2289070B1 (https=)
JP (1) JP2011522348A (https=)
KR (1) KR101468886B1 (https=)
CN (1) CN102113057B (https=)
TW (1) TWI397921B (https=)
WO (1) WO2009146057A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11049535B2 (en) 2019-09-23 2021-06-29 SK Hynix Inc. Memory device and method of operating the memory device

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010516222A (ja) 2007-01-09 2010-05-13 パワー モニターズ インコーポレイテッド スマート回路ブレーカの方法及び装置
US9202383B2 (en) 2008-03-04 2015-12-01 Power Monitors, Inc. Method and apparatus for a voice-prompted electrical hookup
US7957197B2 (en) * 2008-05-28 2011-06-07 Sandisk Corporation Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node
US8710907B2 (en) 2008-06-24 2014-04-29 Sandisk Technologies Inc. Clock generator circuit for a charge pump
US8446773B2 (en) * 2009-02-25 2013-05-21 Samsung Electronics Co., Ltd. Memory system and programming method thereof
US8339183B2 (en) 2009-07-24 2012-12-25 Sandisk Technologies Inc. Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories
US8773108B2 (en) 2009-11-10 2014-07-08 Power Monitors, Inc. System, method, and apparatus for a safe powerline communications instrumentation front-end
KR101094944B1 (ko) * 2009-12-24 2011-12-15 주식회사 하이닉스반도체 센싱 전압을 제어하는 비휘발성 반도체 집적 회로
JP2011146100A (ja) * 2010-01-15 2011-07-28 Toshiba Corp 半導体記憶装置及びその読出し方法
EP2413105B1 (en) 2010-07-29 2017-07-05 Power Monitors, Inc. Method and apparatus for a demand management monitoring system
US10060957B2 (en) 2010-07-29 2018-08-28 Power Monitors, Inc. Method and apparatus for a cloud-based power quality monitor
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
US8294509B2 (en) 2010-12-20 2012-10-23 Sandisk Technologies Inc. Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances
CN102881331A (zh) * 2011-07-15 2013-01-16 复旦大学 灵敏放大器的控制电路及包括其的dram
US8699247B2 (en) 2011-09-09 2014-04-15 Sandisk Technologies Inc. Charge pump system dynamically reconfigurable for read and program
US8400212B1 (en) 2011-09-22 2013-03-19 Sandisk Technologies Inc. High voltage charge pump regulation system with fine step adjustment
US8514628B2 (en) 2011-09-22 2013-08-20 Sandisk Technologies Inc. Dynamic switching approach to reduce area and power consumption of high voltage charge pumps
US8630120B2 (en) 2011-10-20 2014-01-14 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory
WO2013058960A2 (en) 2011-10-20 2013-04-25 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory
US8705293B2 (en) 2011-10-20 2014-04-22 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory suitable for quick pass write
TWI463497B (zh) * 2011-11-09 2014-12-01 Macronix Int Co Ltd 記憶體存取方法及應用其之快閃記憶體
US20140003176A1 (en) * 2012-06-28 2014-01-02 Man Lung Mui Compact High Speed Sense Amplifier for Non-Volatile Memory with Reduced layout Area and Power Consumption
US9293195B2 (en) 2012-06-28 2016-03-22 Sandisk Technologies Inc. Compact high speed sense amplifier for non-volatile memory
US8971141B2 (en) 2012-06-28 2015-03-03 Sandisk Technologies Inc. Compact high speed sense amplifier for non-volatile memory and hybrid lockout
US9257154B2 (en) * 2012-11-29 2016-02-09 Micron Technology, Inc. Methods and apparatuses for compensating for source voltage
KR20140081027A (ko) * 2012-12-21 2014-07-01 에스케이하이닉스 주식회사 비휘발성 메모리 장치
JP2014186777A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 半導体記憶装置
JP2015036998A (ja) * 2013-08-13 2015-02-23 株式会社東芝 半導体記憶装置
CN104575606B (zh) * 2013-10-10 2018-05-22 无锡华润上华科技有限公司 一种带有自检测电路的读出电路及控制方法
US9208895B1 (en) 2014-08-14 2015-12-08 Sandisk Technologies Inc. Cell current control through power supply
US9349468B2 (en) 2014-08-25 2016-05-24 SanDisk Technologies, Inc. Operational amplifier methods for charging of sense amplifier internal nodes
US9312018B1 (en) * 2014-09-24 2016-04-12 Intel Corporation Sensing with boost
US10032509B2 (en) * 2015-03-30 2018-07-24 Toshiba Memory Corporation Semiconductor memory device including variable resistance element
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
JP6490018B2 (ja) * 2016-02-12 2019-03-27 東芝メモリ株式会社 半導体記憶装置
CN105913875B (zh) * 2016-03-31 2019-11-26 清华大学 控制电路、存储装置及操作方法
CN106098098B (zh) * 2016-06-22 2019-07-02 上海华虹宏力半导体制造有限公司 电流比较电路、存储器及电流比较方法
US9786345B1 (en) 2016-09-16 2017-10-10 Micron Technology, Inc. Compensation for threshold voltage variation of memory cell components
KR102662764B1 (ko) 2016-11-17 2024-05-02 삼성전자주식회사 페이지 버퍼, 이를 포함하는 메모리 장치 및 이의 독출 방법
US10366729B2 (en) 2017-06-22 2019-07-30 Sandisk Technologies Llc Sense circuit with two-step clock signal for consecutive sensing
JP2019067474A (ja) 2017-10-05 2019-04-25 東芝メモリ株式会社 半導体記憶装置
US10460814B2 (en) * 2017-12-12 2019-10-29 Western Digital Technologies, Inc. Non-volatile memory and method for power efficient read or verify using lockout control
KR102385569B1 (ko) * 2018-01-03 2022-04-12 삼성전자주식회사 메모리 장치
US10217496B1 (en) * 2018-02-28 2019-02-26 Arm Limited Bitline write assist circuitry
CN110610738B (zh) * 2018-06-15 2023-08-18 硅存储技术公司 用于闪存存储器系统的改进的感测放大器
CN111462802B (zh) * 2019-01-22 2022-05-13 上海汉容微电子有限公司 一种nor闪存的读取电路
US11004501B2 (en) * 2019-06-26 2021-05-11 Macronix International Co., Ltd. Sensing a memory device
US11417400B2 (en) 2020-01-31 2022-08-16 Sandisk Technologies Llc Controlling timing and ramp rate of program-inhibit voltage signal during programming to optimize peak current
US11074956B1 (en) * 2020-03-02 2021-07-27 Micron Technology, Inc. Arbitrated sense amplifier
US11929125B2 (en) 2021-06-23 2024-03-12 Sandisk Technologies Llc Window program verify to reduce data latch usage in memory device
US11901018B2 (en) * 2021-12-27 2024-02-13 Sandisk Technologies Llc Sense amplifier structure for non-volatile memory with neighbor bit line local data bus data transfer
CN118969043B (zh) * 2024-10-17 2025-02-28 苏州宽温电子科技有限公司 只读存储器单元阵列及其存储信息读取方法、系统、计算机设备、存储介质及程序产品

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0528780A (ja) * 1991-07-22 1993-02-05 Toshiba Corp 不揮発性半導体記憶装置
EP0974976A1 (en) * 1998-07-20 2000-01-26 STMicroelectronics S.r.l. Circuit and method for reading a non-volatile memory
WO2006065501A1 (en) * 2004-12-16 2006-06-22 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US7593265B2 (en) * 2007-12-28 2009-09-22 Sandisk Corporation Low noise sense amplifier array and method for nonvolatile memory

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4785427A (en) * 1987-01-28 1988-11-15 Cypress Semiconductor Corporation Differential bit line clamp
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5070032A (en) * 1989-03-15 1991-12-03 Sundisk Corporation Method of making dense flash eeprom semiconductor memory structures
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5343063A (en) * 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5313421A (en) * 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5315541A (en) * 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
KR0169267B1 (ko) * 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
US5661053A (en) * 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
US5721702A (en) * 1995-08-01 1998-02-24 Micron Quantum Devices, Inc. Reference voltage generator using flash memory cells
US5903495A (en) * 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
US5768192A (en) * 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US6335149B1 (en) 1997-04-08 2002-01-01 Corning Incorporated High performance acrylate materials for optical interconnects
US6768165B1 (en) * 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
JP3883687B2 (ja) * 1998-02-16 2007-02-21 株式会社ルネサステクノロジ 半導体装置、メモリカード及びデータ処理システム
JP3983969B2 (ja) * 2000-03-08 2007-09-26 株式会社東芝 不揮発性半導体記憶装置
JP2001266585A (ja) * 2000-03-23 2001-09-28 Toshiba Lsi System Support Kk Ｍｒｏｍ回路
ITRM20010001A1 (it) * 2001-01-03 2002-07-03 Micron Technology Inc Circuiteria di rilevazione per memorie flash a bassa tensione.
KR100381956B1 (ko) * 2001-02-02 2003-04-26 삼성전자주식회사 플래시 메모리 장치의 감지 증폭 회로
US7196931B2 (en) * 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
US6657891B1 (en) * 2002-11-29 2003-12-02 Kabushiki Kaisha Toshiba Semiconductor memory device for storing multivalued data
JP3920768B2 (ja) * 2002-12-26 2007-05-30 株式会社東芝 不揮発性半導体メモリ
JP4322686B2 (ja) * 2004-01-07 2009-09-02 株式会社東芝 不揮発性半導体記憶装置
JP2005293659A (ja) * 2004-03-31 2005-10-20 Nec Electronics Corp メモリ装置とリファレンス電流設定方法
US7095655B2 (en) * 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US7120051B2 (en) 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US20060140007A1 (en) 2004-12-29 2006-06-29 Raul-Adrian Cernea Non-volatile memory and method with shared processing for an aggregate of read/write circuits
KR100680486B1 (ko) * 2005-03-30 2007-02-08 주식회사 하이닉스반도체 향상된 동작 성능을 가지는 플래시 메모리 장치의 페이지버퍼 회로 및 그 독출 및 프로그램 동작 제어 방법
US7173854B2 (en) * 2005-04-01 2007-02-06 Sandisk Corporation Non-volatile memory and method with compensation for source line bias errors
ITRM20050353A1 (it) * 2005-07-04 2007-01-05 Micron Technology Inc Amplificatore di rilevazione di piu' bit a bassa potenza.
US7447094B2 (en) * 2005-12-29 2008-11-04 Sandisk Corporation Method for power-saving multi-pass sensing in non-volatile memory
US7564718B2 (en) * 2006-04-12 2009-07-21 Infineon Technologies Flash Gmbh & Co. Kg Method for programming a block of memory cells, non-volatile memory device and memory card device
US7580291B2 (en) * 2006-06-08 2009-08-25 Atmel Corporation Data register with efficient erase, program verify, and direct bit-line memory access features
US7489554B2 (en) 2007-04-05 2009-02-10 Sandisk Corporation Method for current sensing with biasing of source and P-well in non-volatile storage
US7957197B2 (en) 2008-05-28 2011-06-07 Sandisk Corporation Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0528780A (ja) * 1991-07-22 1993-02-05 Toshiba Corp 不揮発性半導体記憶装置
EP0974976A1 (en) * 1998-07-20 2000-01-26 STMicroelectronics S.r.l. Circuit and method for reading a non-volatile memory
WO2006065501A1 (en) * 2004-12-16 2006-06-22 Sandisk Corporation Memory sensing circuit and method for low voltage operation
US7593265B2 (en) * 2007-12-28 2009-09-22 Sandisk Corporation Low noise sense amplifier array and method for nonvolatile memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11049535B2 (en) 2019-09-23 2021-06-29 SK Hynix Inc. Memory device and method of operating the memory device

Also Published As

Publication number Publication date
US7957197B2 (en) 2011-06-07
US20110205804A1 (en) 2011-08-25
US8169831B2 (en) 2012-05-01
TWI397921B (zh) 2013-06-01
TW201007757A (en) 2010-02-16
KR20110034588A (ko) 2011-04-05
CN102113057A (zh) 2011-06-29
EP2289070B1 (en) 2014-05-07
JP2011522348A (ja) 2011-07-28
EP2289070A1 (en) 2011-03-02
CN102113057B (zh) 2014-11-05
WO2009146057A1 (en) 2009-12-03
US20090296488A1 (en) 2009-12-03

Similar Documents

Publication Publication Date Title
KR101468886B1 (ko) 비휘발성 메모리를 위한 고속 감지 증폭기 어레이와 방법
KR101565775B1 (ko) 저 노이즈 감지 증폭기 어레이와 비휘발성 메모리를 위한 방법
TWI402853B (zh) 記憶體感測電路及低電壓操作之方法
EP1543527B1 (en) Non-volatile memory and method of programming with reduced neighbouring field errors
EP1543521B1 (en) Non-volatile memory and method with reduced bit line crosstalk errors
EP1543529B1 (en) Non-volatile memory and its sensing method
US7551484B2 (en) Non-volatile memory and method with reduced source line bias errors
KR20150028785A (ko) 혼성 록아웃을 가진 비휘발성 메모리를 위한 콤팩트한 고속 감지 증폭기
KR20150030219A (ko) 감소된 레이아웃 면적 및 파워 소비를 가진 비휘발성 메모리를 위한 콤팩트한 고속 감지 증폭기

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
A302 Request for accelerated examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20171027

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20181029

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20191008

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20201028

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20211027

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20221017

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 12