KR101468614B1 - 쓰루 기판 비아 측벽 및 깊게 에칭된 피쳐들을 스무싱하기 위한 사후 에칭 반응성 플라즈마 밀링 - Google Patents

쓰루 기판 비아 측벽 및 깊게 에칭된 피쳐들을 스무싱하기 위한 사후 에칭 반응성 플라즈마 밀링 Download PDF

Info

Publication number
KR101468614B1
KR101468614B1 KR1020117007111A KR20117007111A KR101468614B1 KR 101468614 B1 KR101468614 B1 KR 101468614B1 KR 1020117007111 A KR1020117007111 A KR 1020117007111A KR 20117007111 A KR20117007111 A KR 20117007111A KR 101468614 B1 KR101468614 B1 KR 101468614B1
Authority
KR
South Korea
Prior art keywords
substrate
etched
feature
reactive plasma
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020117007111A
Other languages
English (en)
Korean (ko)
Other versions
KR20110052723A (ko
Inventor
존 파르
샤르마 파마티
칼리드 시라주딘
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20110052723A publication Critical patent/KR20110052723A/ko
Application granted granted Critical
Publication of KR101468614B1 publication Critical patent/KR101468614B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020117007111A 2008-08-27 2009-08-11 쓰루 기판 비아 측벽 및 깊게 에칭된 피쳐들을 스무싱하기 위한 사후 에칭 반응성 플라즈마 밀링 Expired - Fee Related KR101468614B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/229,946 2008-08-27
US12/229,946 US9039908B2 (en) 2008-08-27 2008-08-27 Post etch reactive plasma milling to smooth through substrate via sidewalls and other deeply etched features
PCT/US2009/004613 WO2010027400A2 (en) 2008-08-27 2009-08-11 Post etch reactive plasma milling to smooth through substrate via sidewalls and other deeply etched features

Publications (2)

Publication Number Publication Date
KR20110052723A KR20110052723A (ko) 2011-05-18
KR101468614B1 true KR101468614B1 (ko) 2014-12-04

Family

ID=41725875

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117007111A Expired - Fee Related KR101468614B1 (ko) 2008-08-27 2009-08-11 쓰루 기판 비아 측벽 및 깊게 에칭된 피쳐들을 스무싱하기 위한 사후 에칭 반응성 플라즈마 밀링

Country Status (6)

Country Link
US (1) US9039908B2 (https=)
JP (1) JP5674663B2 (https=)
KR (1) KR101468614B1 (https=)
CN (1) CN102165565B (https=)
TW (1) TWI494996B (https=)
WO (1) WO2010027400A2 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
US8987140B2 (en) 2011-04-25 2015-03-24 Applied Materials, Inc. Methods for etching through-silicon vias with tunable profile angles
KR101867998B1 (ko) * 2011-06-14 2018-06-15 삼성전자주식회사 패턴 형성 방법
KR102021510B1 (ko) 2011-06-30 2019-09-16 어플라이드 머티어리얼스, 인코포레이티드 고속 가스 교환, 고속 가스 전환 및 프로그램 가능한 가스 전달을 위한 방법 및 장치
US9023227B2 (en) 2011-06-30 2015-05-05 Applied Materials, Inc. Increased deposition efficiency and higher chamber conductance with source power increase in an inductively coupled plasma (ICP) chamber
CN103159163B (zh) 2011-12-19 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 基片刻蚀方法及基片处理设备
US9041210B2 (en) 2012-06-19 2015-05-26 International Business Machines Corporation Through silicon via wafer and methods of manufacturing
US9159574B2 (en) * 2012-08-27 2015-10-13 Applied Materials, Inc. Method of silicon etch for trench sidewall smoothing
CN103887164B (zh) * 2012-12-20 2017-07-04 北京北方微电子基地设备工艺研究中心有限责任公司 一种深硅刻蚀方法
US20150087144A1 (en) * 2013-09-26 2015-03-26 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method of manufacturing metal gate semiconductor device
KR102148336B1 (ko) 2013-11-26 2020-08-27 삼성전자주식회사 표면 처리 방법, 반도체 제조 방법 및 이에 의해 제조된 반도체 장치
CN104752331B (zh) * 2013-12-31 2018-08-07 中微半导体设备(上海)有限公司 一种硅通孔刻蚀方法
KR102233577B1 (ko) 2014-02-25 2021-03-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
TWI614806B (zh) * 2015-12-16 2018-02-11 提升矽晶穿孔製程速度之方法
US9892969B2 (en) * 2016-05-11 2018-02-13 Semiconductor Components Industries, Llc Process of forming an electronic device
GB201608926D0 (en) * 2016-05-20 2016-07-06 Spts Technologies Ltd Method for plasma etching a workpiece
GB201620680D0 (en) * 2016-12-05 2017-01-18 Spts Technologies Ltd Method of smoothing a surface
JP7281741B2 (ja) * 2019-08-23 2023-05-26 パナソニックＩｐマネジメント株式会社 素子チップのスムージング方法および素子チップの製造方法
KR102297835B1 (ko) * 2019-11-21 2021-09-02 (재)한국나노기술원 테이퍼 형태의 경사벽을 갖는 비아 홀 제조 방법
GB202020822D0 (en) * 2020-12-31 2021-02-17 Spts Technologies Ltd Method and apparatus
JP2025532820A (ja) * 2022-09-29 2025-10-03 ラム リサーチ コーポレーション 側壁の汚染物質および粗さを低減するためのポストエッチングプラズマ処理
GB202319985D0 (en) * 2023-12-22 2024-02-07 Spts Technologies Ltd Methods of treating a semiconductor substrate and apparatus
WO2025197721A1 (ja) * 2024-03-22 2025-09-25 東京エレクトロン株式会社 基板処理方法及びプラズマ処理装置
CN120809574B (zh) * 2025-09-16 2025-11-21 上海邦芯半导体科技有限公司 硬掩膜刻蚀方法及刻蚀设备
CN121123021B (zh) * 2025-11-14 2026-02-17 上海邦芯半导体科技有限公司 一种高深宽比刻蚀结构及其制作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006165032A (ja) * 2004-12-02 2006-06-22 Ulvac Japan Ltd エッチング方法および装置
JP2008034508A (ja) * 2006-07-27 2008-02-14 Sanyo Electric Co Ltd 半導体装置及びその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900007687B1 (ko) 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
JPH0689880A (ja) * 1992-09-08 1994-03-29 Tokyo Electron Ltd エッチング装置
US5352324A (en) * 1992-11-05 1994-10-04 Hitachi, Ltd. Etching method and etching apparatus therefor
JP3217875B2 (ja) * 1992-11-05 2001-10-15 株式会社日立製作所 エッチング装置
US6187685B1 (en) * 1997-08-01 2001-02-13 Surface Technology Systems Limited Method and apparatus for etching a substrate
JP4548873B2 (ja) * 1998-07-08 2010-09-22 株式会社アルバック ＴｉＮ層を等方性エッチングなしにアッシングするドライアッシング方法
US6593244B1 (en) * 2000-09-11 2003-07-15 Applied Materials Inc. Process for etching conductors at high etch rates
US6566270B1 (en) * 2000-09-15 2003-05-20 Applied Materials Inc. Integration of silicon etch and chamber cleaning processes
KR100403130B1 (ko) * 2001-12-27 2003-10-30 동부전자 주식회사 반도체 소자용 금속 배선의 클리닝 방법
US6846746B2 (en) 2002-05-01 2005-01-25 Applied Materials, Inc. Method of smoothing a trench sidewall after a deep trench silicon etch process
US20040097077A1 (en) * 2002-11-15 2004-05-20 Applied Materials, Inc. Method and apparatus for etching a deep trench
JP2004326083A (ja) * 2003-04-09 2004-11-18 Seiko Instruments Inc ミラーの製造方法とミラーデバイス
US20050170670A1 (en) * 2003-11-17 2005-08-04 King William P. Patterning of sacrificial materials
US7481943B2 (en) * 2005-08-08 2009-01-27 Silverbrook Research Pty Ltd Method suitable for etching hydrophillic trenches in a substrate
JP4812512B2 (ja) * 2006-05-19 2011-11-09 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
CN101148765B (zh) 2006-09-19 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 硅片蚀刻方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006165032A (ja) * 2004-12-02 2006-06-22 Ulvac Japan Ltd エッチング方法および装置
JP2008034508A (ja) * 2006-07-27 2008-02-14 Sanyo Electric Co Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
CN102165565B (zh) 2015-08-12
US9039908B2 (en) 2015-05-26
CN102165565A (zh) 2011-08-24
US20100055400A1 (en) 2010-03-04
TWI494996B (zh) 2015-08-01
WO2010027400A3 (en) 2010-04-29
JP2012501540A (ja) 2012-01-19
JP5674663B2 (ja) 2015-02-25
KR20110052723A (ko) 2011-05-18
WO2010027400A2 (en) 2010-03-11
TW201009933A (en) 2010-03-01

Similar Documents

Publication Publication Date Title
KR101468614B1 (ko) 쓰루 기판 비아 측벽 및 깊게 에칭된 피쳐들을 스무싱하기 위한 사후 에칭 반응성 플라즈마 밀링
US5384009A (en) Plasma etching using xenon
US6380095B1 (en) Silicon trench etch using silicon-containing precursors to reduce or avoid mask erosion
US12154792B2 (en) Plasma etching method
US9287124B2 (en) Method of etching a boron doped carbon hardmask
US5354417A (en) Etching MoSi2 using SF6, HBr and O2
US7368394B2 (en) Etch methods to form anisotropic features for high aspect ratio applications
US20030207579A1 (en) Method of etching a deep trench having a tapered profile in silicon
EP1087421A2 (en) Method and apparatus for providing a stable plasma
TWI894241B (zh) 利用氯之高深寬比介電質蝕刻
US20070202700A1 (en) Etch methods to form anisotropic features for high aspect ratio applications
EP0622477A1 (en) Etching aluminum and its alloys using HC1, C1-containing etchant and N2
WO2003096392A2 (en) Method of etching a trench in a silicon-on-insulator (soi) structure
US12354880B2 (en) High aspect ratio etch with infinite selectivity
TWI799511B (zh) 電漿蝕刻方法及電漿蝕刻裝置
US11651977B2 (en) Processing of workpieces using fluorocarbon plasma
WO2022132413A1 (en) Tin oxide and tin carbide materials for semiconductor patterning applications
US5346585A (en) Use of a faceted etch process to eliminate stringers
EP1240665A1 (en) Metal mask etching of silicon
CN119968695A (zh) 用于高深宽比特征的原位碳衬垫
US6756314B2 (en) Method for etching a hard mask layer and a metal layer
KR100702729B1 (ko) 유도-연결된 플라즈마 공정 시스템에서 고애스펙트비의미세 접점 에칭 공정
WO2023137275A1 (en) High selectivity and uniform dielectric etch
US20240429062A1 (en) Increased etch rates of silicon-containing materials
KR20260015138A (ko) 반도체 에칭을 위한 시스템 및 방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20171128

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20171128

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000