TWI799511B - 電漿蝕刻方法及電漿蝕刻裝置 - Google Patents

電漿蝕刻方法及電漿蝕刻裝置 Download PDF

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Publication number
TWI799511B
TWI799511B TW108105018A TW108105018A TWI799511B TW I799511 B TWI799511 B TW I799511B TW 108105018 A TW108105018 A TW 108105018A TW 108105018 A TW108105018 A TW 108105018A TW I799511 B TWI799511 B TW I799511B
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TW
Taiwan
Prior art keywords
plasma etching
etching method
etching apparatus
plasma
etching
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TW108105018A
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English (en)
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TW201937593A (zh
Inventor
後平拓
箕浦佑也
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日商東京威力科創股份有限公司
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TW108105018A 2018-02-15 2019-02-15 電漿蝕刻方法及電漿蝕刻裝置 TWI799511B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018024761 2018-02-15
JP2018-024761 2018-02-15
JP2018-214584 2018-11-15
JP2018214584A JP7158252B2 (ja) 2018-02-15 2018-11-15 プラズマエッチング方法及びプラズマエッチング装置

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TW201937593A TW201937593A (zh) 2019-09-16
TWI799511B true TWI799511B (zh) 2023-04-21

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TW (1) TWI799511B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7454983B2 (ja) 2020-03-30 2024-03-25 東京エレクトロン株式会社 エッジリング及びプラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110650A (ja) * 2000-10-03 2002-04-12 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
JP2017050529A (ja) * 2015-08-12 2017-03-09 セントラル硝子株式会社 ドライエッチング方法
JP2017228690A (ja) * 2016-06-23 2017-12-28 東京エレクトロン株式会社 エッチング処理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6454492B2 (ja) 2014-08-08 2019-01-16 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6498022B2 (ja) 2015-04-22 2019-04-10 東京エレクトロン株式会社 エッチング処理方法
JP6516603B2 (ja) 2015-04-30 2019-05-22 東京エレクトロン株式会社 エッチング方法及びエッチング装置
CN106298502B (zh) 2015-05-18 2019-04-09 中微半导体设备(上海)股份有限公司 一种利用等离子体对多层材料刻蚀的方法
US10847374B2 (en) 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110650A (ja) * 2000-10-03 2002-04-12 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
JP2017050529A (ja) * 2015-08-12 2017-03-09 セントラル硝子株式会社 ドライエッチング方法
JP2017228690A (ja) * 2016-06-23 2017-12-28 東京エレクトロン株式会社 エッチング処理方法

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TW201937593A (zh) 2019-09-16
JP7158252B2 (ja) 2022-10-21
JP2019145780A (ja) 2019-08-29

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