KR101462063B1 - 반도체 디바이스의 응력 경감 - Google Patents

반도체 디바이스의 응력 경감 Download PDF

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Publication number
KR101462063B1
KR101462063B1 KR1020107001862A KR20107001862A KR101462063B1 KR 101462063 B1 KR101462063 B1 KR 101462063B1 KR 1020107001862 A KR1020107001862 A KR 1020107001862A KR 20107001862 A KR20107001862 A KR 20107001862A KR 101462063 B1 KR101462063 B1 KR 101462063B1
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South Korea
Prior art keywords
crack
die
distance
region
edge
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Expired - Fee Related
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KR1020107001862A
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English (en)
Korean (ko)
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KR20100050489A (ko
Inventor
낫 딩 보
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프리스케일 세미컨덕터, 인크.
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Publication of KR20100050489A publication Critical patent/KR20100050489A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Dicing (AREA)
KR1020107001862A 2007-08-08 2008-06-24 반도체 디바이스의 응력 경감 Expired - Fee Related KR101462063B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/835,680 US7960814B2 (en) 2007-08-08 2007-08-08 Stress relief of a semiconductor device
US11/835,680 2007-08-08
PCT/US2008/068023 WO2009020713A1 (en) 2007-08-08 2008-06-24 Stress relief of a semiconductor device

Publications (2)

Publication Number Publication Date
KR20100050489A KR20100050489A (ko) 2010-05-13
KR101462063B1 true KR101462063B1 (ko) 2014-11-17

Family

ID=40341625

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107001862A Expired - Fee Related KR101462063B1 (ko) 2007-08-08 2008-06-24 반도체 디바이스의 응력 경감

Country Status (6)

Country Link
US (1) US7960814B2 (https=)
JP (1) JP5341087B2 (https=)
KR (1) KR101462063B1 (https=)
CN (1) CN101779286B (https=)
TW (1) TWI433222B (https=)
WO (1) WO2009020713A1 (https=)

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US8013425B2 (en) 2008-05-13 2011-09-06 United Microelectronics Corp. Scribe line structure for wafer dicing and method of making the same
US8912076B2 (en) * 2008-11-05 2014-12-16 Texas Instruments Incorporated Crack deflector structure for improving semiconductor device robustness against saw-induced damage
US8125053B2 (en) * 2009-02-04 2012-02-28 Texas Instruments Incorporated Embedded scribe lane crack arrest structure for improved IC package reliability of plastic flip chip devices
US8124448B2 (en) 2009-09-18 2012-02-28 Advanced Micro Devices, Inc. Semiconductor chip with crack deflection structure
DE102010029528A1 (de) * 2010-05-31 2011-12-01 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Halbleiterbauelement mit einer Chipumrandung mit gradueller Strukturdichte
US8692392B2 (en) 2010-10-05 2014-04-08 Infineon Technologies Ag Crack stop barrier and method of manufacturing thereof
US20120286397A1 (en) * 2011-05-13 2012-11-15 Globalfoundries Inc. Die Seal for Integrated Circuit Device
US8940618B2 (en) * 2012-03-13 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method and device for cutting semiconductor wafers
KR101984736B1 (ko) * 2012-10-09 2019-06-03 삼성디스플레이 주식회사 플렉서블 디스플레이 장치용 어레이 기판
US8896102B2 (en) * 2013-01-22 2014-11-25 Freescale Semiconductor, Inc. Die edge sealing structures and related fabrication methods
US20140342471A1 (en) * 2013-05-20 2014-11-20 Varian Semiconductor Equipment Associates, Inc. Variable Doping Of Solar Cells
TWI467757B (zh) * 2013-08-02 2015-01-01 頎邦科技股份有限公司 半導體結構
US10263536B2 (en) 2014-06-20 2019-04-16 Ge Global Sourcing Llc Apparatus and method for control of multi-inverter power converter
US20160268166A1 (en) * 2015-03-12 2016-09-15 Kabushiki Kaisha Toshiba Semiconductor memory device and method of manufacturing the same
KR102611982B1 (ko) 2016-05-25 2023-12-08 삼성전자주식회사 반도체 장치
KR102633112B1 (ko) 2016-08-05 2024-02-06 삼성전자주식회사 반도체 소자
CN109950208A (zh) * 2017-12-21 2019-06-28 成都海存艾匹科技有限公司 适合划片且能避免裂痕的半导体晶粒
KR102599050B1 (ko) * 2018-08-20 2023-11-06 삼성전자주식회사 반도체 칩의 제조 방법
JP7443097B2 (ja) 2020-03-09 2024-03-05 キオクシア株式会社 半導体ウェハおよび半導体チップ
US11652069B2 (en) * 2020-12-08 2023-05-16 Globalfoundries Singapore Pte. Ltd. Crackstop structures
US20230290684A1 (en) * 2022-03-09 2023-09-14 Micron Technology, Inc. Structures and methods for dicing semiconductor devices
DE102022128335A1 (de) 2022-10-26 2024-05-02 Infineon Technologies Ag Chip mit Rissleitstruktur kombiniert mit Rissstoppstruktur
CN115376905B (zh) * 2022-10-27 2023-01-31 山东中清智能科技股份有限公司 一种半导体晶片的切割工艺
CN116314041A (zh) * 2023-05-24 2023-06-23 深圳和美精艺半导体科技股份有限公司 承载基板、应用其的封装结构及封装元件

Citations (3)

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US5858882A (en) * 1997-03-24 1999-01-12 Vanguard International Semiconductor Corporation In-situ low wafer temperature oxidized gas plasma surface treatment process
US6709954B1 (en) * 2002-06-21 2004-03-23 Advanced Micro Devices, Inc. Scribe seal structure and method of manufacture
US6759272B2 (en) * 1996-11-21 2004-07-06 Renesas Technology Corp. Semiconductor device and manufacturing method thereof

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US4922326A (en) 1988-07-18 1990-05-01 Motorola, Inc. Ceramic semiconductor package having crack arrestor patterns
US4976814A (en) 1988-07-18 1990-12-11 Motorola, Inc. Method of making a ceramic semiconductor package having crack arrestor patterns
US6972209B2 (en) 2002-11-27 2005-12-06 International Business Machines Corporation Stacked via-stud with improved reliability in copper metallurgy
US7098676B2 (en) 2003-01-08 2006-08-29 International Business Machines Corporation Multi-functional structure for enhanced chip manufacturibility and reliability for low k dielectrics semiconductors and a crackstop integrity screen and monitor
US7126225B2 (en) 2003-04-15 2006-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for manufacturing a semiconductor wafer with reduced delamination and peeling
US20050026397A1 (en) 2003-07-28 2005-02-03 International Business Machines Corporation Crack stop for low k dielectrics
US7180187B2 (en) 2004-06-22 2007-02-20 International Business Machines Corporation Interlayer connector for preventing delamination of semiconductor device
US7129566B2 (en) * 2004-06-30 2006-10-31 Freescale Semiconductor, Inc. Scribe street structure for backend interconnect semiconductor wafer integration
US7223673B2 (en) 2004-07-15 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device with crack prevention ring
JP4636839B2 (ja) * 2004-09-24 2011-02-23 パナソニック株式会社 電子デバイス
US7211500B2 (en) * 2004-09-27 2007-05-01 United Microelectronics Corp. Pre-process before cutting a wafer and method of cutting a wafer
JP2008066716A (ja) * 2006-08-10 2008-03-21 Matsushita Electric Ind Co Ltd 半導体装置
JP5175066B2 (ja) * 2006-09-15 2013-04-03 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6759272B2 (en) * 1996-11-21 2004-07-06 Renesas Technology Corp. Semiconductor device and manufacturing method thereof
US5858882A (en) * 1997-03-24 1999-01-12 Vanguard International Semiconductor Corporation In-situ low wafer temperature oxidized gas plasma surface treatment process
US6709954B1 (en) * 2002-06-21 2004-03-23 Advanced Micro Devices, Inc. Scribe seal structure and method of manufacture

Also Published As

Publication number Publication date
KR20100050489A (ko) 2010-05-13
JP5341087B2 (ja) 2013-11-13
JP2010536174A (ja) 2010-11-25
US7960814B2 (en) 2011-06-14
US20090039470A1 (en) 2009-02-12
CN101779286A (zh) 2010-07-14
WO2009020713A1 (en) 2009-02-12
CN101779286B (zh) 2012-01-11
TWI433222B (zh) 2014-04-01
TW200913041A (en) 2009-03-16

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