KR101458990B1 - 정전척 및 기판 온도조절-고정장치 - Google Patents

정전척 및 기판 온도조절-고정장치 Download PDF

Info

Publication number
KR101458990B1
KR101458990B1 KR1020080133155A KR20080133155A KR101458990B1 KR 101458990 B1 KR101458990 B1 KR 101458990B1 KR 1020080133155 A KR1020080133155 A KR 1020080133155A KR 20080133155 A KR20080133155 A KR 20080133155A KR 101458990 B1 KR101458990 B1 KR 101458990B1
Authority
KR
South Korea
Prior art keywords
base body
substrate
electrostatic chuck
substrate temperature
adsorbed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020080133155A
Other languages
English (en)
Korean (ko)
Other versions
KR20090071439A (ko
Inventor
도모아키 고야마
고키 다마가와
Original Assignee
신꼬오덴기 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신꼬오덴기 고교 가부시키가이샤 filed Critical 신꼬오덴기 고교 가부시키가이샤
Publication of KR20090071439A publication Critical patent/KR20090071439A/ko
Application granted granted Critical
Publication of KR101458990B1 publication Critical patent/KR101458990B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020080133155A 2007-12-26 2008-12-24 정전척 및 기판 온도조절-고정장치 Active KR101458990B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-333867 2007-12-26
JP2007333867A JP4974873B2 (ja) 2007-12-26 2007-12-26 静電チャック及び基板温調固定装置

Publications (2)

Publication Number Publication Date
KR20090071439A KR20090071439A (ko) 2009-07-01
KR101458990B1 true KR101458990B1 (ko) 2014-11-07

Family

ID=40798014

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080133155A Active KR101458990B1 (ko) 2007-12-26 2008-12-24 정전척 및 기판 온도조절-고정장치

Country Status (4)

Country Link
US (1) US8199454B2 (enExample)
JP (1) JP4974873B2 (enExample)
KR (1) KR101458990B1 (enExample)
CN (1) CN101471278A (enExample)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7940511B2 (en) * 2007-09-21 2011-05-10 Asml Netherlands B.V. Electrostatic clamp, lithographic apparatus and method of manufacturing an electrostatic clamp
WO2010095540A1 (ja) * 2009-02-18 2010-08-26 株式会社アルバック ウェハ搬送用トレイ及びこのトレイ上にウェハを固定する方法
JP5218865B2 (ja) * 2010-03-26 2013-06-26 Ｔｏｔｏ株式会社 静電チャック
CN108359957A (zh) * 2010-10-29 2018-08-03 应用材料公司 用于物理气相沉积腔室的沉积环及静电夹盘
JP5960154B2 (ja) 2010-12-08 2016-08-02 エーエスエムエル ホールディング エヌ．ブイ． 静電クランプ、リソグラフィ装置、および静電クランプの製造方法
EP2841995A2 (en) * 2012-04-23 2015-03-04 ASML Netherlands BV Electrostatic clamp, lithographic apparatus and method
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
CN103794527B (zh) * 2012-10-30 2016-08-24 中微半导体设备(上海)有限公司 静电卡盘加热方法
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
CN104008957B (zh) * 2013-02-22 2016-10-05 中微半导体设备(上海)有限公司 基片补偿刻蚀的方法
US9101038B2 (en) 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping
JP6215104B2 (ja) * 2014-03-20 2017-10-18 新光電気工業株式会社 温度調整装置
WO2016014138A1 (en) * 2014-07-23 2016-01-28 Applied Materials, Inc. Tunable temperature controlled substrate support assembly
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US10002782B2 (en) 2014-10-17 2018-06-19 Lam Research Corporation ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) * 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
JP6312926B2 (ja) * 2015-04-02 2018-04-18 株式会社アルバック 吸着方法及び真空処理方法
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
CN106024610B (zh) * 2016-07-28 2019-06-07 京东方科技集团股份有限公司 一种下部电极、干法刻蚀设备
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
TWI729319B (zh) * 2017-10-27 2021-06-01 美商應用材料股份有限公司 具有空間分離的單個晶圓處理環境
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
CN108364845B (zh) * 2018-03-20 2020-05-05 武汉华星光电技术有限公司 一种干法刻蚀设备
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
JP7209515B2 (ja) * 2018-11-27 2023-01-20 東京エレクトロン株式会社 基板保持機構および成膜装置
TWI794131B (zh) * 2018-12-21 2023-02-21 日商Ｔｏｔｏ股份有限公司 靜電吸盤
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
CN110149071A (zh) * 2019-05-22 2019-08-20 夏义捷 一种库仑力电机及直线加速装置
CN110289241B (zh) * 2019-07-04 2022-03-22 北京北方华创微电子装备有限公司 静电卡盘及其制作方法、工艺腔室和半导体处理设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076105A (ja) 2000-06-14 2002-03-15 Anelva Corp 静電吸着機構及び表面処理装置
JP2002299426A (ja) 2001-03-29 2002-10-11 Toto Ltd 静電チャックユニット
JP2006049357A (ja) 2004-07-30 2006-02-16 Toto Ltd 静電チャックおよび静電チャックを搭載した装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3271352B2 (ja) * 1993-01-13 2002-04-02 ソニー株式会社 静電チャック及びその作製方法並びに基板処理装置及び基板搬送装置
US5625526A (en) * 1993-06-01 1997-04-29 Tokyo Electron Limited Electrostatic chuck
JPH09172055A (ja) * 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
JP2000317761A (ja) 1999-03-01 2000-11-21 Toto Ltd 静電チャックおよび吸着方法
TW473792B (en) * 2000-01-20 2002-01-21 Ngk Insulators Ltd Electrostatic chuck
JP4094262B2 (ja) * 2001-09-13 2008-06-04 住友大阪セメント株式会社 吸着固定装置及びその製造方法
JP4407793B2 (ja) 2003-07-11 2010-02-03 Ｔｏｔｏ株式会社 静電チャックおよび静電チャックを搭載した装置
US7072165B2 (en) * 2003-08-18 2006-07-04 Axcelis Technologies, Inc. MEMS based multi-polar electrostatic chuck
US7248457B2 (en) * 2005-11-15 2007-07-24 Toto Ltd. Electrostatic chuck
TW200735254A (en) * 2006-03-03 2007-09-16 Ngk Insulators Ltd Electrostatic chuck and producing method thereof
JP2009302518A (ja) * 2008-05-13 2009-12-24 Toto Ltd 静電チャック

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076105A (ja) 2000-06-14 2002-03-15 Anelva Corp 静電吸着機構及び表面処理装置
JP2002299426A (ja) 2001-03-29 2002-10-11 Toto Ltd 静電チャックユニット
JP2006049357A (ja) 2004-07-30 2006-02-16 Toto Ltd 静電チャックおよび静電チャックを搭載した装置

Also Published As

Publication number Publication date
KR20090071439A (ko) 2009-07-01
CN101471278A (zh) 2009-07-01
JP2009158664A (ja) 2009-07-16
JP4974873B2 (ja) 2012-07-11
US8199454B2 (en) 2012-06-12
US20090168291A1 (en) 2009-07-02

Similar Documents

Publication Publication Date Title
KR101458990B1 (ko) 정전척 및 기판 온도조절-고정장치
TWI761621B (zh) 靜電夾盤組件、靜電夾盤及聚焦環
US8641825B2 (en) Substrate temperature regulation fixed apparatus
US7331307B2 (en) Thermally sprayed member, electrode and plasma processing apparatus using the electrode
KR100369871B1 (ko) 정전 척
KR101889806B1 (ko) 천정 전극판 및 기판 처리 장치
TWI518841B (zh) Electrostatic sucker
US8295026B2 (en) Electrostatic chuck and substrate processing apparatus having same
CN102569130B (zh) 基板处理装置及基板处理方法
US8068326B2 (en) Electrostatic chuck and substrate temperature control fixing apparatus
TWI494995B (zh) Buffer plate and substrate processing device
KR101047249B1 (ko) 대면적 기판들의 균일성 강화를 위한 방법 및 장치
KR101217379B1 (ko) 포커스 링 및 기판 탑재 시스템
US20050042881A1 (en) Processing apparatus
US20080194113A1 (en) Methods and apparatus for semiconductor etching including an electro static chuck
US20070266945A1 (en) Plasma cvd apparatus equipped with plasma blocking insulation plate
JP3374033B2 (ja) 真空処理装置
KR20020019030A (ko) 정전 척 및 처리장치
KR20090071489A (ko) 정전척 및 기판 온도조절-고정장치
TW202306441A (zh) 電漿處理裝置
CN115053323A (zh) 用于衬底处理的静电边缘环安置系统
CN1857044A (zh) 使用接触容积的有效的温度控制方法和装置
JP5235033B2 (ja) 電極アッセンブリ及びプラズマ処理装置
TWI904132B (zh) 用於基板處理的靜電邊緣環架置系統
JP7402037B2 (ja) 静電チャック

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12