TWI761621B - 靜電夾盤組件、靜電夾盤及聚焦環 - Google Patents
靜電夾盤組件、靜電夾盤及聚焦環 Download PDFInfo
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Abstract
靜電夾盤組件15係包括:陶瓷體22,係在晶圓載置面22a的外周部具有位置比是圓形表面之晶圓載置面22a低的F/R載置面28a:晶圓吸附用電極32,係被埋設於陶瓷體22之內部中與晶圓載置面22a相對向的位置;F/R吸附用電極38,係被埋設於陶瓷體22之內部中與F/R載置面28a相對向的位置:儲存氣體用之凹凸區域29,係被設置於F/R載置面28a之表面:聚焦環50,係被載置於F/R載置面28a:以及一對彈性環狀密封構件60,係位於F/R載置面28a與聚焦環50之間並以包圍凹凸區域29的方式被配置於F/R載置面28a的內周側及外周側。
Description
本發明係有關於一種靜電夾盤組件、靜電夾盤及聚焦環。
自以往,已知電漿蝕刻裝置、電漿CVD裝置、電漿灰化裝置等之電漿處理裝置。在這種電漿處理裝置,一般在真空室內設置用以載置晶圓的晶圓載置裝置。晶圓載置裝置係包括:靜電夾盤,係用以將施行電漿處理之晶圓吸附並固定於晶圓載置面;及冷卻板,係冷卻該靜電夾盤。作為靜電夾盤,使用在絕緣體或電介質(大多是陶瓷)埋設內部電極者等。在這種晶圓載置裝置,係在將晶圓載置於晶圓載置面之狀態,對內部電極施加直流電壓,產生靜電力(庫倫力或Johnsen-Rahbek力),藉此,將晶圓吸附並固定於晶圓載置面。而且,在此狀態,以與晶圓接觸之方式產生電漿。有時在晶圓載置面的外周,設置可替換之聚焦環。聚焦環係被載置於位置比晶圓載置面更低的聚焦環載置面,並具有至晶圓的外周緣穩定地產生電漿之任務或保護靜電夾盤之表面的任務。在對晶圓施行電漿處理時,係因為不僅晶圓,而且該聚焦環亦曝露於電漿,所以溫度上升。靜電夾盤所吸附並固定之晶圓係經由靜電夾盤,藉冷卻板所冷卻。可是,因為聚焦環係遠比靜電夾盤厚,所以無法被靜電夾盤充分地吸附,而可能溫升變成過度,因此,晶圓之外周緣的溫度變高,而電漿處理製程的良率可能變差。
因此,在專利文獻1,係在防蝕鋁製之靜電夾盤,採用使在晶圓載置面所使用之電介質與在聚焦環載置面所使用之電介質的比電阻係數相異者,藉庫倫力吸附晶圓,並藉Johnsen-Rahbek力吸附聚焦環。又,在專利文獻2,係在相同之陶瓷內與晶圓吸附用電極另外地設置聚焦環吸附用電極,並因應於電漿處理之步驟,僅變更施加於聚焦環吸附用電極之夾盤電壓,而在聚焦環易成為高溫之蝕刻製程係提高夾盤電壓,而提高吸附力。
[先行技術文獻]
[專利文獻]
[專利文獻1]日本專利第4559595號公報
[專利文獻2]日本特開2010-183074號公報
可是,在專利文獻1、2,記載向聚焦環載置面與聚焦環之間供給氦氣,使聚焦環載置面與聚焦環之間的導熱變成圓滑。可是,在專利文獻1、2,係有時向聚焦環載置面與聚焦環之間所供給之氦氣未停留於聚焦環載置面與聚焦環之間而向其周圍洩漏,而有時未充分地進行藉氦氣之導熱。因此,抑制這種氣體之洩漏較佳。
本發明係為了解決這種課題而開發者,其主要的目的在於提供一種靜電夾盤組件、靜電夾盤及聚焦環,該靜電夾盤組件係可抑制向聚焦環載置面與聚焦環之間所供給的氣體向其周圍洩漏。
本發明之靜電夾盤組件係包括:
陶瓷體,係在晶圓載置面的外周部具有位置比是圓形表面之該晶圓載置面低的聚焦環載置面:
第1電極,係被埋設於該陶瓷體之內部中與該晶圓載置面相對向的位置;
第2電極,係被埋設於該陶瓷體之內部中與該聚焦環載置面相對向的位置:
儲存氣體用之凹凸區域,係被設置於該聚焦環載置面之表面:
聚焦環,係被載置於該聚焦環載置面:以及
一對彈性環狀密封構件,係位於該聚焦環載置面與該聚焦環之間並以包圍該凹凸區域的方式被配置於該聚焦環載置面的內周側及外周側。
在使用此靜電夾盤組件時,在將晶圓載置於晶圓載置面之狀態,對第1電極及第2電極之各個施加電壓。於是,晶圓係被吸附於晶圓載置面,聚焦環係被吸附於聚焦環載置面。將聚焦環吸附於聚焦環載置面時之吸附力係亦可是庫倫力,亦可是Johnsen-Rahbek力,但是Johnsen-Rahbek力較佳。因為聚焦環係比晶圓厚,所以難在矯正翹曲之狀態吸附,但是因為彈性環狀密封構件吸收聚焦環之翹曲,所以可將聚焦環確實地吸附於聚焦環載置面。結果,聚焦環載置面之凹凸區域係藉彈性環狀密封構件與聚焦環成為氣密或大致氣密,而可抑制向凹凸區域所供給之氣體的洩漏。進而,因為第1電極與第2電極係獨立,所以可對各個施加適合的電壓。
在本發明之靜電夾盤組件,亦可該彈性環狀密封構件係被嵌入在該聚焦環載置面及該聚焦環之至少一方所設置的環狀槽。依此方式,利用環狀槽,可易於設定彈性環狀密封構件。此外,亦可彈性環狀密封構件係不嵌入環狀槽,而採用以聚焦環載置面之平坦部與聚焦環之平坦部夾住的狀態。在此情況,亦可彈性環狀密封構件係以黏著劑被黏接於聚焦環載置面及聚焦環之至少一方。
本發明之靜電夾盤係包括:
陶瓷體,係在晶圓載置面的外周部具有位置比是圓形表面之該晶圓載置面低的聚焦環載置面:
第1電極,係被埋設於該陶瓷體之內部中與該晶圓載置面相對向的位置;第2電極,係被埋設於該陶瓷體之內部中與該聚焦環載置面相對向的位置:儲存氣體用之凹凸區域,係被設置於該聚焦環載置面之表面:以及一對環狀槽,係在聚焦環載置面之表面中以包圍該凹凸區域的方式被設置於內周側及外周側。
在使用此靜電夾盤時,在將晶圓載置於晶圓載置面,並將彈性環狀密封構件嵌入聚焦環載置面之一對環狀槽後,再將聚焦環載置於其上之狀態,對第1電極及第2電極之各個施加電壓。於是,晶圓係被吸附於晶圓載置面,聚焦環係被吸附於聚焦環載置面。將聚焦環吸附於聚焦環載置面時之吸附力係亦可是庫倫力,亦可是Johnsen-Rahbek力,但是Johnsen-Rahbek力較佳。因為聚焦環係比晶圓厚,所以難在矯正翹曲之狀態吸附,但是因為在聚焦環載置面之一對環狀槽所嵌入的彈性環狀密封構件吸收聚焦環之翹曲,所以可將聚焦環確實地吸附於聚焦環載置面。結果,聚焦環載置面之凹凸區域係藉在一對環狀槽所嵌入的彈性環狀密封構件與聚焦環成為氣密或大致氣密,而可抑制向凹凸區域所供給之氣體的洩漏。進而,因為第1電極與第2電極係獨立,所以可對各個施加適合的電壓。
在本發明之靜電夾盤組件或靜電夾盤,亦可該陶瓷體中將該聚焦環載置面與該第2電極之間的部分除外的主體係由具有可發揮庫倫力之體積電阻係數的第1陶瓷構件所構成,是該聚焦環載置面與該第2電極之間之部分的副體係由具有可發揮Johnsen-Rahbek力之體積電阻係數的第2陶瓷構件所構成。依此方式,在使用靜電夾盤時,晶圓係藉庫倫力被吸附於晶圓載置面,聚焦環係藉比庫倫力更強之Johnsen-Rahbek力被吸附於聚焦環載置面。Johnsen-Rahbek力係因為吸附力強,所以矯正聚焦環之翹曲,而可吸附於聚焦環載置面。
在本發明之靜電夾盤組件或靜電夾盤,該第1陶瓷構件之體積電阻係數係在使用溫度是1×1015Ωcm以上,該第2陶瓷構件之體積電阻係數係在使用溫度是1×108
Ωcm以上且1×1013
Ωcm以下較佳。依此方式,第1陶瓷構件係易發揮庫倫力,第2陶瓷構件係易發揮Johnsen-Rahbek力。使用溫度係對晶圓施行電漿處理時之溫度,適當地被設定於例如-100℃~150℃之間,一般係被設定於室溫~150℃之間。亦可第2陶瓷構件之體積電阻係數係採用在使用溫度是1×108
Ωcm以上且1×1011
Ωcm以下。
在本發明之靜電夾盤組件或靜電夾盤,該第2陶瓷構件係由被摻雜週期表第4族元素之陶瓷所形成較佳。這種陶瓷係適合熱噴塗。作為週期表第4族元素,列舉例如鈦、鋯、鉿等。亦可週期表第4族元素之摻雜量係第2陶瓷構件之體積電阻係數在使用溫度成為1×108
Ωcm以上且1×1013
Ωcm以下的範圍內適當地設定。被摻雜週期表第4族元素之第2陶瓷構件係主成分與第1陶瓷構件相同較佳。依此方式,可將導熱係數或熱膨脹係數作成與第1陶瓷構件同程度。
在本發明之靜電夾盤組件或靜電夾盤,該第2陶瓷構件之厚度不均係0.5mm以下較佳。依此方式,因為在第2陶瓷構件無過薄的部分,所以難發生絕緣破壞。又,因為在第2陶瓷構件無過厚的部分,所以消除靜電所需之時間變成比較短。
在本發明之靜電夾盤組件或靜電夾盤,該第2電極係雙極電極較佳。依此方式,用以預防在Johnsen-Rahbek型式之靜電夾盤常常成為問題的殘留電荷所造成之脫裝不良等的靜電消除處理等成為容易。
本發明之聚焦環係在靜電夾盤之聚焦環載置面所載置的聚焦環,
包括一對環狀槽,該一對環狀槽係被設置於該聚焦環中被載置於該靜電夾盤之側的面之內周側及外周側;
該一對環狀槽係被設置於可包圍在該聚焦環載置面所設置之儲存氣體用的凹凸區域之內周側與外周側的位置。
在使用此聚焦環時,在將彈性環狀密封構件嵌入聚焦環之一對環狀槽後,再將聚焦環載置於靜電夾盤之聚焦環載置面的狀態,使聚焦環載置面藉靜電力(庫倫力或Johnsen-Rahbek力)吸附聚焦環。因為聚焦環係比晶圓厚,所以難在矯正翹曲之狀態吸附,但是因為在聚焦環載置面之一對環狀槽所嵌入的彈性環狀密封構件吸收聚焦環之翹曲,所以可將聚焦環確實地吸附於聚焦環載置面。結果,聚焦環載置面之凹凸區域係藉在一對環狀槽所嵌入的彈性環狀密封構件與聚焦環成為氣密或大致氣密,而可抑制向凹凸區域所供給之氣體的洩漏。
在以下,一面參照圖式,一面說明本發明之適合的實施形態。圖1係在室80所配置之晶圓載置裝置10的縱向剖面圖。圖2係圖1之靜電夾盤組件15的局部放大圖。圖3係表示靜電夾盤組件15之組裝程序的說明圖。
晶圓載置裝置10係利用電漿,對晶圓W進行蝕刻或CVD等之裝置。並被固定於半導體處理用之室80的底面所使用。晶圓載置裝置10係除了靜電夾盤組件15以外,還包括冷卻板70,靜電夾盤組件15係包括靜電夾盤20、聚焦環50以及一對O環60。
靜電夾盤20係包括圓板狀的陶瓷體22、陶瓷體22係具有:圓形之晶圓載置面22a,係載置晶圓W;及環狀之聚焦環(F/R)載置面28a,係在該晶圓載置面22a的外周以比晶圓載置面22a低一段的方式所形成。在陶瓷體22之內部中與晶圓載置面22a相對向的位置,埋設晶圓吸附用電極32。晶圓載置面22a的直徑係被形成為比晶圓W的直徑更小。因此,在將晶圓W載置於晶圓載置面22a之狀態,係晶圓W的外周緣從晶圓載置面22a露出。又,在陶瓷體22之與F/R載置面28a相對向的位置,係以與晶圓吸附用電極32獨立的方式設置聚焦環(F/R)吸附用電極38。陶瓷體22係在與晶圓載置面22a是相反側的背面22b,經由黏合片75被黏接於冷卻板70。
陶瓷體22係包括第1陶瓷構件27與第2陶瓷構件28。第2陶瓷構件28係陶瓷體22中位於比聚焦環吸附用電極38之下面更上側的環狀部分,第1陶瓷構件27係陶瓷體22中第2陶瓷構件28以外的部分。第1陶瓷構件27係具有可發揮庫倫力之體積電阻係數者,是由氮化鋁、氮化矽、氧化鋁等之陶瓷材料所構成的構件。在使用溫度(例如在常溫~150℃之間所設定的溫度,以下相同。),只要體積電阻係數是1×1015
Ωcm以上,就可充分地發揮庫倫力。第2陶瓷構件28係具有可發揮Johnsen-Rahbek力之體積電阻係數者,是對第1陶瓷構件27之陶瓷材料摻雜週期表第4族元素(例如鈦)之材料所構成的構件。在使用溫度,只要體積電阻係數是1×108
Ωcm以上且1×1013
Ωcm以下(較佳是1×108
Ωcm以上且1×1011
Ωcm以下),就可充分地發揮Johnsen-Rahbek力。第2陶瓷構件28係以厚度成為0.05mm~2mm、厚度不均成為0.5mm以下的方式所形成。第2陶瓷構件28係在本實施形態係採用熱噴塗膜。
在陶瓷體22之晶圓載置面22a,係設置儲存氣體用的凹凸區域23。凹凸區域23係在晶圓載置面22a的整個面所設置。在凹凸區域23,係藉壓花加工形成複數個凹凸。對在凹凸區域23所設置之凹部23c與在晶圓載置面22a所載置的晶圓W之間,係從自背面22b貫穿至晶圓載置面22a的氣體供給路23d供給導熱用的氣體(例如He氣)。在陶瓷體22之F/R載置面28a,係設置儲存氣體用的凹凸區域29。凹凸區域29係與F/R載置面28a同軸之圓環形的區域,並藉壓花加工形成複數個凹凸。對在凹凸區域29所設置之凹部29c與在F/R載置面28a所載置的聚焦環50之間,係從氣體供給路29d供給導熱用的氣體(例如He氣)。氣體供給路29d係被設置成從陶瓷體22之背面22b貫穿至F/R載置面28a。
晶圓吸附用電極32係由具有導電性之網目或板所製作,並被設置成與晶圓載置面22a平行(包含實質上平行的情況,以下相同)。晶圓吸附用電極32的背面係與從陶瓷體22的背面22b所插入之未圖示的供電棒連接。經由此供電棒對晶圓吸附用電極32施加直流電壓。
聚焦環吸附用電極38係由具有導電性之印刷圖案所製作的雙極電極,成對之梳齒電極分開地被設置於環狀段差面24a之表面。聚焦環吸附用電極38之背面係與從陶瓷體22的背面22b所插入之未圖示的供電棒連接。經由此供電棒對聚焦環吸附用電極38施加直流電壓。
聚焦環50係例如是金屬矽製的構件,並具有在靜電夾盤20之F/R載置面28a所載置的環本體52。在環本體52的上端部,係沿著內周形成截面L字形的環狀段差面52a。環狀段差面52a係為了與晶圓W不會發生干涉,將外徑形成為比晶圓W或晶圓載置面22a之直徑更稍大。這種聚焦環50係具有保護晶圓W及靜電夾盤20的任務。此外,聚焦環50係未與F/R載置面28a黏接,而只是被載置於F/R載置面28a。聚焦環50的材質係在電漿處理是電漿蝕刻的情況,是因應於晶圓W之蝕刻對象膜的種類,適當地選擇。如圖3所示,在環本體52之背面52b(被載置於靜電夾盤20之側的面)中,在被載置於靜電夾盤20時與F/R載置面28a的凹凸區域29相對向之相對向區域54的內周側與外周側,係以包圍相對向區域54之方式設置是一對環狀槽的內周槽55及外周槽57。內周槽55及外周槽57係與環本體52同軸的環狀槽,並被形成為截面U字形。
一對O環60係包括小徑O環65及大徑O環67。O環65、67係由全氟醚等之氟橡膠所形成的O環,小徑O環65係被嵌入聚焦環50的內周槽55,大徑O環67係被嵌入聚焦環50的外周槽57。這種O環65、67係吸收聚焦環50的翹曲,而將聚焦環50確實地吸附於F/R載置面28a,具有抑制向F/R載置面28a之凹凸區域29所供給的氣體之洩漏的任務。
冷卻板70係由金屬所構成之圓板狀的板,該金屬係由鋁或鋁合金等所代表,並在內部包括冷媒可循環的冷媒通路72。此冷媒通路72係與貫穿室80之冷媒供給路及冷媒排出路連接,從冷媒排出路所排出之冷媒係被調整溫度後再回到冷媒供給路。
其次,使用圖3,說明靜電夾盤組件15之組裝例。首先,準備上述之靜電夾盤20、聚焦環50以及O環65、67。接著,將小徑O環65嵌入聚焦環50的內周槽55,並將大徑O環67嵌入外周槽57。然後,把已將O環65、67嵌入的聚焦環50載置於靜電夾盤20的F/R載置面28a上。在此時,以聚焦環50之內周槽55與外周槽57以及所嵌入之小徑O環65與大徑O環67包圍在F/R載置面28a所設置之凹凸區域29的內周側與外周側的方式載置聚焦環50。藉此,F/R載置面28a之凹凸區域29係藉O環65、67與聚焦環50之相對向區域54成為氣密或大致氣密。
其次,使用圖1,說明靜電夾盤組件15之使用例。包括靜電夾盤組件15之晶圓載置裝置10係在被固定於室80之底面的狀態所使用。在室80的天花板面,係被配置從多個氣體噴射孔向室80之內部放出處理氣體的蓮蓬頭90。
在靜電夾盤20的晶圓載置面22a,係載置圓板狀的晶圓W。晶圓W係藉由對晶圓吸附用電極32施加電壓,而利用庫倫力被靜電吸附於晶圓載置
面22a。晶圓W的溫度係可藉由調整對冷卻板70的冷媒通路72所供給之冷媒的溫度來控制。在此時,為了在晶圓W與晶圓載置面22a的凹部23c之間使導熱變成良好,而供給He氣體。晶圓W之溫度控制係藉未圖示之溫度檢測感測器檢測出晶圓的溫度,並進行回授控制成該溫度成為目標溫度,藉此所執行。
在靜電夾盤20之F/R載置面28a,係載置圓環形的聚焦環50。聚焦環50係藉由對F/R吸附用電極38施加電壓,而藉Johnsen-Rahbek力被靜電吸附於F/R載置面28a。聚焦環50之溫度係可藉由調整對冷卻板70的冷媒通路72所供給之冷媒的溫度來控制。在此時,為了在聚焦環50與F/R載置面28a的凹部29c之間使導熱變成良好,而供給He氣體。聚焦環50之溫度控制係藉未圖示之溫度檢測感測器檢測出聚焦環50的溫度,並進行回授控制成該溫度成為目標溫度,藉此所執行。
在此狀態,將室80之內部設定成既定真空環境(或降壓環境),並一面從蓮蓬頭90供給處理氣體一面對冷卻板70與蓮蓬頭90之間供給高頻電力,而產生電漿。然後,利用該電漿,對晶圓施行CVD成膜或施行蝕刻。
伴隨對晶圓W進行電漿處理,聚焦環50亦消耗,但是因為聚焦環50係厚度厚,所以聚焦環50之更換係在處理複數片晶圓W後所進行。
此處,弄清楚本實施形態之構成元件與本發明之構成元件的對應關係。本實施形態之陶瓷體22相當於本發明之陶瓷體,晶圓吸附用電極32相當於第1電極,F/R吸附用電極38相當於第2電極。又,一對O環60相當於一對彈性環狀密封構件。
在如以上所說明之第1實施形態的靜電夾盤組件15或靜電夾盤20,係在使用這些構件時,在將晶圓W載置於晶圓載置面22a之狀態,對晶圓吸附用電極32及F/R吸附用電極38的各個施加電壓。於是,晶圓W係被吸附於晶圓載置面22a,聚焦環50係被吸附於F/R載置面28a。因為聚焦環50係比晶圓W厚,所以難在矯正翹曲之狀態吸附,但是因為O環65、67吸收聚焦環50之翹曲,所以可將聚焦環50確實地吸附於F/R載置面28a。結果,F/R載置面28a之凹凸區域29係藉O環65、67與聚焦環50成為氣密或大致氣密,而可抑制向凹凸區域29所供給之氣體的洩漏。因此,在這種具有靜電夾盤組件15或靜電夾盤20的晶圓載置裝置10,係利用向凹凸區域29所供給之氣體的導熱,可充分地冷卻聚焦環50。進而,因為晶圓吸附用電極32與F/R吸附用電極38係獨立,所以可對各個施加適合的電壓。
又,在靜電夾盤組件15,一對O環60係因為被嵌入在聚焦環50所設置之環狀的槽55、57,所以利用槽55、57,可易於設定O環65、67。
進而,在靜電夾盤組件15或靜電夾盤20,在陶瓷體中,第1陶瓷構件27係由具有可發揮庫倫力之體積電阻係數的材料所構成,第2陶瓷構件28係由具有可發揮Johnsen-Rahbek力之體積電阻係數的材料所構成。因此,在使用靜電夾盤20時,晶圓W係藉庫倫力被吸附於晶圓載置面22a,聚焦環50係藉Johnsen-Rahbek力被吸附於F/R載置面28a。Johnsen-Rahbek力係因為吸附力強,所以矯正聚焦環50之翹曲,而可吸附於F/R載置面28a。
進而又,在靜電夾盤組件15或靜電夾盤20,第1陶瓷構件27之體積電阻係數係1×1015
Ωcm以上,第2陶瓷構件28之體積電阻係數係1×108
Ωcm以上且1×1013
Ωcm以下。因此,第1陶瓷構件27係易發揮庫倫力,第2陶瓷構件28係易發揮Johnsen-Rahbek力。
而且,在靜電夾盤組件15或靜電夾盤20,第2陶瓷構件28係由被摻雜週期表第4族元素之陶瓷所形成,這種陶瓷係適合熱噴塗。
而且又,在靜電夾盤組件15或靜電夾盤20,因為第2陶瓷構件28的厚度不均是0.5mm以下,所以在第2陶瓷構件28無過薄的部分,而難發生絕緣破壞。又,因為在第2陶瓷構件28無過厚的部分,而消除靜電所需之時間變成比較短。
而且進而,在靜電夾盤組件15或靜電夾盤20,因為F/R吸附用電極38係雙極電極,所以用以預防在Johnsen-Rahbek型式之靜電夾盤常常成為問題的殘留電荷所造成之脫裝不良等的靜電消除處理等成為容易。
而且進而又,在靜電夾盤組件15或靜電夾盤20,因為第2陶瓷構件28是熱噴塗膜,所以可比較簡單地形成第2陶瓷構件28。又,第2陶瓷構件28係因為主成分與第1陶瓷構件27之陶瓷材料相同的材料,所以可將導熱係數或熱膨漲係數等作成與第1陶瓷構件27同程度。
此外,本發明係絲毫未被限定為上述的實施形態,只要屬於本發明的技術性範圍,能以各種的形態實施,這是理所當然。
例如,在上述之實施形態,係將小徑O環65及大徑O環67分別地嵌入在聚焦環50之背面52b所設置的內周槽55及外周槽57,但是亦可如圖4所示,將聚焦環50的背面52b作成平坦,並將小徑O環65及大徑O環67分別地嵌入在F/R載置面28a所設置的內周槽125及外周槽127。或者,亦可如圖5所示,將聚焦環50的背面52b作成平坦,而且F/R載置面28a之凹凸區域29以外的區域亦作成平坦,並在聚焦環50之背面52b與F/R載置面28a之凹凸區域29以外的區域夾住小徑O環65及大徑O環67。或者,亦可如圖6所示,將小徑O環65配置於沿著聚焦環50之背面52b的內周所設置之截面L字形的缺口槽255,且將大徑O環67配置於沿著F/R載置面28a的外周所設置之截面L字形的缺口槽227。亦可在圖6,替代缺口槽255或缺口槽227,形成如圖2的內周槽55或圖4的外周槽127所示之截面U字形的環狀槽。或者,亦可如圖7所示,將深度淺的內周槽355與外周槽357設置於聚焦環50之背面52b,在F/R載置面中與那些槽相對向的位置亦設置深度淺的內周槽325與外周槽327,並將小徑O環65嵌入雙方之內周槽355、325,將大徑O環67嵌入雙方之外周槽357、327。任一種方式都與上述之實施形態一樣,可抑制向
F/R載置面28a與聚焦環50之間所供給的氣體向其周圍洩漏。此外,在圖5,因為F/R載置面28a與聚焦環50之距離遠,所以有聚焦環50之冷卻效率或作用於聚焦環50與F/R載置面28a之間的吸附力比上述之實施形態或其他的實施形態更降低的傾向。在圖7,係因為在聚焦環50及F/R載置面28a之雙方形成內周槽355、325與外周槽357、327,並將小徑O環65嵌入雙方之內周槽355、325,將大徑O環67嵌入雙方之外周槽357、327,所以聚焦環50的定位成為容易。
在上述之實施形態,係由第1陶瓷構件27與第2陶瓷構件28構成陶瓷體22,但是亦可由第1陶瓷構件27之材料成一體地形成陶瓷體22。依此方式,聚焦環50係藉庫倫力被吸附於F/R載置面28a。
在上述之實施形態,聚焦環係採用在環本體52的上端部形成環狀段差面52a者,但是亦可省略環狀段差面52a。又,亦可在聚焦環的外周側,形成從環本體52之背面52b向下方延伸的裙部。
在上述之實施形態,係作為彈性環狀密封構件,使用O環,但是只要是低楊氏模數之密封構件,無特別地限定,可使用各種墊圈等。又,彈性環狀密封構件係採用由氟橡膠所形成者,但是只要是由彈性材料所形成者即可,例如,亦可採用由氟樹脂所形成者,亦可採用由矽樹脂或矽橡膠所形成者。又,亦可彈性環狀密封構件係黏接於靜電夾盤20或聚焦環50後使用。
在上述之實施形態,係作為第2陶瓷構件28,使用熱噴塗膜,但是亦可替代熱噴塗膜,採用使用氣溶膠沉積法等其他的塗佈技術所產生的薄膜。在熱噴塗或這些塗佈方法,係因為可比較高精度地控制厚度,所以得到發揮所要之吸附力的薄膜是容易,所得之薄膜係亦適合於確保絕緣。此外,作為熱噴塗法,係除了一般之熱噴塗法以外,可採用冷噴塗法或懸浮電漿熱噴塗法等各種的熱噴塗法。
在上述之實施形態,F/R吸附用電極38係採用雙極電極,但是亦可是單極電極。又,在上述之實施形態,晶圓吸附用電極32係亦可是單極電極,亦可是雙極電極。亦可F/R吸附用電極38係採用與晶圓吸附用電極32相同的電極。
在上述之實施形態,亦可在陶瓷體22之內部中與晶圓載置面22a相對向的位置,係更埋設高頻(RF)電極或加熱電極。RF電極係由導電性之網目所製作。並被設置成與晶圓載置面22a平行。RF電極之背面係與從陶瓷體22的背面22b所插入之未圖示的供電棒連接。經由此供電棒對RF電極施加RF電壓。加熱電極係由具有導電性之線圈或印刷圖案所製作的電阻發熱體,並在與晶圓載置面22a相對向的整個區域和晶圓載置面22a平行地以一筆畫之要領從一端被配線至另一端。加熱電極之一端和另一端係與從陶瓷體22的背面22b所插入之一對供電棒連接。經由此供電棒對加熱電極施加電壓。一樣地,亦可在陶瓷體22之內部中與F/R載置面28a相對向的位置,係埋設 RF電極或加熱電極。。
在上述之實施形態,係以黏合片75將冷卻板70黏接於靜電夾盤20之背面22b,但是例如在由Si-SiC-Ti等之陶瓷複合材料製作冷卻板70的情況,係亦可藉TCB(Thermal Compression Bonding)將冷卻板70接合於靜電夾盤20之背面22b。TCB係意指將金屬接合材料夾入接合對象的2個構件之間,並在加熱至金屬接合材料之固態線溫度以下的溫度之狀態對2個構件進行加壓接合的方法。
在上述之實施形態,亦可設置使晶圓W升降的升降銷。在此情況,插入升降銷的插入孔係只要設置成貫穿室80、冷卻板70、黏合片75以及靜電夾盤20即可。
在上述之實施形態,係向冷卻板70與蓮蓬頭90之間供給高頻電力,而產生電漿,但是亦可向晶圓吸附用電極32或F/R吸附用電極38等之靜電電極與蓮蓬頭90之間供給高頻電力,而產生電漿。又,如上述所示,亦可進而設置RF電極,並向RF電極與蓮蓬頭90之間供給高頻電力,而產生電漿。
本專利申請係將於2017年11月6日所申請之美國暫時專利申請第62/581900號作為優先權主張的基礎,藉引用在本專利說明書包其內容的全部。
[工業上的可利用性]
本發明係可利用於半導體製造裝置,尤其適合於在高功率化進展之電漿蝕刻處理所使用的半導體製造裝置。
10‧‧‧晶圓載置裝置
15‧‧‧靜電夾盤組件
20‧‧‧靜電夾盤
22‧‧‧陶瓷體
22a‧‧‧晶圓載置面
22b‧‧‧背面
23‧‧‧凹凸區域
23c‧‧‧凹部
23d‧‧‧氣體供給路
24a‧‧‧環狀段差面
27‧‧‧第1陶瓷構件
28‧‧‧第2陶瓷構件
28a‧‧‧聚焦環載置面
29‧‧‧凹凸區域
29c‧‧‧凹部
29d‧‧‧氣體供給路
32:晶圓吸附用電極
38:聚焦環吸附用電極
50:聚焦環
52:環本體
52a:環狀段差面
52b:背面
54:相對向區域
55、355:內周槽
57、357:外周槽
60:O環
65:小徑O環
67:大徑O環
70:冷卻板
72:冷媒通路
75:黏合片
80:室
90:蓮蓬頭
125、325:內周槽
127、327:外周槽
227、255:缺口槽
W:晶圓
[圖1]係在室80所配置之晶圓載置裝置10的縱向剖面圖。
[圖2]係圖1之靜電夾盤組件15的局部放大圖。
[圖3]係表示靜電夾盤組件15之組裝程序的說明圖。
[圖4]係靜電夾盤組件15之別的例子的局部放大圖。
[圖5]係靜電夾盤組件15之別的例子的局部放大圖。
[圖6]係靜電夾盤組件15之別的例子的局部放大圖。
[圖7]係靜電夾盤組件15之別的例子的局部放大圖。
15‧‧‧靜電夾盤組件
20‧‧‧靜電夾盤
22‧‧‧陶瓷體
22a‧‧‧晶圓載置面
22b‧‧‧背面
23‧‧‧凹凸區域
23c‧‧‧凹部
23d‧‧‧氣體供給路
24a‧‧‧環狀段差面
27‧‧‧第1陶瓷構件
28:第2陶瓷構件
28a:聚焦環載置面
29:凹凸區域
29d:氣體供給路
32:晶圓吸附用電極
38:聚焦環吸附用電極
50:聚焦環
52:環本體
52a:環狀段差面
52b:背面
55:內周槽
57:外周槽
60:O環
65:小徑O環
67:大徑O環
Claims (3)
- 一種靜電夾盤組件,其包括:陶瓷體,係在晶圓載置面的外周部具有位置比是圓形表面之該晶圓載置面低的聚焦環載置面;第1電極,係被埋設於該陶瓷體之內部中與該晶圓載置面相對向的位置;第2電極,係被埋設於該陶瓷體之內部中與該聚焦環載置面相對向的位置;儲存氣體用之凹凸區域,係被設置於該聚焦環載置面之表面;聚焦環,係被載置於該聚焦環載置面;以及一對彈性環狀密封構件,係位於該聚焦環載置面與該聚焦環之間並以包圍該凹凸區域的方式被配置於該聚焦環載置面的內周側及外周側;該陶瓷體中將該聚焦環載置面與該第2電極之間的部分除外的主體係由具有可發揮庫倫力之體積電阻係數的第1陶瓷構件所構成,是該聚焦環載置面與該第2電極之間之部分的副體係由具有可發揮Johnsen-Rahbek力之體積電阻係數的第2陶瓷構件所構成。
- 如申請專利範圍第1項之靜電夾盤組件,其中該彈性環狀密封構件係被嵌入在該聚焦環載置面及該聚焦環之至少一方所設置的環狀槽。
- 一種靜電夾盤,其包括:陶瓷體,係在晶圓載置面的外周部具有位置比是圓形表面之該晶圓載置面低的聚焦環載置面;第1電極,係被埋設於該陶瓷體之內部中與該晶圓載置面相對向的位置;第2電極,係被埋設於該陶瓷體之內部中與該聚焦環載置面相對向的位置;儲存氣體用之凹凸區域,係被設置於該聚焦環載置面之表面;以及一對環狀槽,係在該聚焦環載置面之表面中以包圍該凹凸區域的方式被設置於內周側及外周側; 該陶瓷體中將該聚焦環載置面與該第2電極之間的部分除外的主體係由具有可發揮庫倫力之體積電阻係數的第1陶瓷構件所構成,是該聚焦環載置面與該第2電極之間之部分的副體係由具有可發揮Johnsen-Rahbek力之體積電阻係數的第2陶瓷構件所構成。
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US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
JP7204350B2 (ja) * | 2018-06-12 | 2023-01-16 | 東京エレクトロン株式会社 | 載置台、基板処理装置及びエッジリング |
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US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
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JP7390880B2 (ja) | 2019-12-05 | 2023-12-04 | 東京エレクトロン株式会社 | エッジリング及び基板処理装置 |
US11551916B2 (en) * | 2020-03-20 | 2023-01-10 | Applied Materials, Inc. | Sheath and temperature control of a process kit in a substrate processing chamber |
US20230133798A1 (en) * | 2020-04-02 | 2023-05-04 | Lam Research Corporation | Cooled edge ring with integrated seals |
US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
CN114188205A (zh) * | 2020-09-14 | 2022-03-15 | 中微半导体设备(上海)股份有限公司 | 一种静电装置、其所在的基片处理系统及其置换清洁方法 |
CN112397366B (zh) * | 2020-11-05 | 2023-07-14 | 北京北方华创微电子装备有限公司 | 一种承载装置及半导体反应腔室 |
JP6842225B1 (ja) * | 2020-11-12 | 2021-03-17 | ハイソル株式会社 | チャックユニット及びチャックユニットの温度制御方法 |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
TW202341343A (zh) * | 2021-12-23 | 2023-10-16 | 日商東京威力科創股份有限公司 | 基板支持器及電漿處理裝置 |
JP2023149659A (ja) | 2022-03-31 | 2023-10-13 | 日本碍子株式会社 | ウエハ載置台 |
US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005064460A (ja) * | 2003-04-24 | 2005-03-10 | Tokyo Electron Ltd | プラズマ処理装置、フォーカスリング及び被処理体の載置装置 |
JP2015041451A (ja) * | 2013-08-21 | 2015-03-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10303288A (ja) | 1997-04-26 | 1998-11-13 | Anelva Corp | プラズマ処理装置用基板ホルダー |
JP4592916B2 (ja) * | 2000-04-25 | 2010-12-08 | 東京エレクトロン株式会社 | 被処理体の載置装置 |
JP4559595B2 (ja) | 2000-07-17 | 2010-10-06 | 東京エレクトロン株式会社 | 被処理体の載置装置及びプラズマ処理装置 |
US6475336B1 (en) | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
JP3996002B2 (ja) * | 2002-07-10 | 2007-10-24 | 東京エレクトロン株式会社 | 真空処理装置 |
JP2004179364A (ja) * | 2002-11-27 | 2004-06-24 | Kyocera Corp | 静電チャック |
US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
JP5492578B2 (ja) | 2003-04-24 | 2014-05-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2006319043A (ja) | 2005-05-11 | 2006-11-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2008078208A (ja) * | 2006-09-19 | 2008-04-03 | Tokyo Electron Ltd | フォーカスリング及びプラズマ処理装置 |
KR100849179B1 (ko) * | 2007-01-10 | 2008-07-30 | 삼성전자주식회사 | 갭 발생방지구조 및 이를 갖는 플라즈마 처리설비 |
JP4677474B2 (ja) | 2008-07-28 | 2011-04-27 | キヤノンアネルバ株式会社 | プラズマ処理装置用基板ホルダーにおける特性補正リングの温度制御方法及びプラズマ処理装置用基板ホルダー |
US8449679B2 (en) * | 2008-08-15 | 2013-05-28 | Lam Research Corporation | Temperature controlled hot edge ring assembly |
JP5642531B2 (ja) | 2010-12-22 | 2014-12-17 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP6285620B2 (ja) | 2011-08-26 | 2018-02-28 | 新光電気工業株式会社 | 静電チャック及び半導体・液晶製造装置 |
JP5798677B2 (ja) * | 2014-10-29 | 2015-10-21 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP2017126727A (ja) * | 2016-01-15 | 2017-07-20 | 東京エレクトロン株式会社 | 載置台の構造及び半導体処理装置 |
JP6723660B2 (ja) * | 2017-03-24 | 2020-07-15 | 住友重機械イオンテクノロジー株式会社 | ウェハ保持装置及びウェハ着脱方法 |
JP6811144B2 (ja) * | 2017-05-30 | 2021-01-13 | 東京エレクトロン株式会社 | プラズマ処理装置の静電チャックを運用する方法 |
-
2018
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005064460A (ja) * | 2003-04-24 | 2005-03-10 | Tokyo Electron Ltd | プラズマ処理装置、フォーカスリング及び被処理体の載置装置 |
JP2015041451A (ja) * | 2013-08-21 | 2015-03-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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