KR101458771B1 - 발광 장치 - Google Patents

발광 장치 Download PDF

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Publication number
KR101458771B1
KR101458771B1 KR1020080061671A KR20080061671A KR101458771B1 KR 101458771 B1 KR101458771 B1 KR 101458771B1 KR 1020080061671 A KR1020080061671 A KR 1020080061671A KR 20080061671 A KR20080061671 A KR 20080061671A KR 101458771 B1 KR101458771 B1 KR 101458771B1
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semiconductor film
film
electrode
thin film
source
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KR20090004587A (ko
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야마자키 ?페이
스즈키 유키
쿠와바라 히데아키
미야이리 히데카즈
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020080061671A 2007-06-29 2008-06-27 발광 장치 Active KR101458771B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00173539 2007-06-29
JP2007173539 2007-06-29
JPJP-P-2007-00185057 2007-07-13
JP2007185057 2007-07-13

Publications (2)

Publication Number Publication Date
KR20090004587A KR20090004587A (ko) 2009-01-12
KR101458771B1 true KR101458771B1 (ko) 2014-11-07

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Family Applications (1)

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KR1020080061671A Active KR101458771B1 (ko) 2007-06-29 2008-06-27 발광 장치

Country Status (4)

Country Link
US (1) US8921858B2 (enExample)
JP (1) JP5542269B2 (enExample)
KR (1) KR101458771B1 (enExample)
TW (1) TWI466299B (enExample)

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US8334537B2 (en) * 2007-07-06 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
TWI456663B (zh) 2007-07-20 2014-10-11 Semiconductor Energy Lab 顯示裝置之製造方法
TWI575293B (zh) 2007-07-20 2017-03-21 半導體能源研究所股份有限公司 液晶顯示裝置
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KR101484297B1 (ko) * 2007-08-31 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 표시장치의 제작방법
JP5395384B2 (ja) * 2007-09-07 2014-01-22 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP5371341B2 (ja) * 2007-09-21 2013-12-18 株式会社半導体エネルギー研究所 電気泳動方式の表示装置
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KR101446249B1 (ko) 2007-12-03 2014-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
TWI521712B (zh) * 2007-12-03 2016-02-11 半導體能源研究所股份有限公司 薄膜電晶體，包括該薄膜電晶體的顯示裝置，和其製造方法
JP5527966B2 (ja) 2007-12-28 2014-06-25 株式会社半導体エネルギー研究所 薄膜トランジスタ
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KR101999970B1 (ko) 2008-09-19 2019-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5361651B2 (ja) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP5590868B2 (ja) * 2008-12-11 2014-09-17 株式会社半導体エネルギー研究所 半導体装置
KR20100067612A (ko) 2008-12-11 2010-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터 및 표시 장치
JP4737309B2 (ja) 2009-02-26 2011-07-27 株式会社デンソー 放電灯ユニット
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WO2011027656A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101730347B1 (ko) * 2009-09-16 2017-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
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KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
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KR101720533B1 (ko) * 2010-08-31 2017-04-03 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층 제조 방법을 포함하는 박막 트랜지스터의 제조 방법, 상기 방법에 의해 제조된 박막 트랜지스터, 및 상기 박막 트랜지스터를 포함하는 유기 발광 디스플레이 장치
US9178071B2 (en) 2010-09-13 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
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JP2015115469A (ja) * 2013-12-12 2015-06-22 ソニー株式会社 薄膜トランジスタ、表示装置、電子機器、および薄膜トランジスタの製造方法
KR102270036B1 (ko) * 2015-01-02 2021-06-28 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP2018182305A (ja) * 2017-04-17 2018-11-15 Jsr株式会社 薄膜トランジスタ基板、液晶表示素子、有機ｅｌ素子、感放射線性樹脂組成物および薄膜トランジスタ基板の製造方法
WO2020217396A1 (ja) * 2019-04-25 2020-10-29 株式会社ソシオネクスト 半導体装置
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