KR101446661B1 - 반도체 소자 구조체의 제조 방법 - Google Patents

반도체 소자 구조체의 제조 방법 Download PDF

Info

Publication number
KR101446661B1
KR101446661B1 KR1020130051645A KR20130051645A KR101446661B1 KR 101446661 B1 KR101446661 B1 KR 101446661B1 KR 1020130051645 A KR1020130051645 A KR 1020130051645A KR 20130051645 A KR20130051645 A KR 20130051645A KR 101446661 B1 KR101446661 B1 KR 101446661B1
Authority
KR
South Korea
Prior art keywords
gate electrode
electrode structure
layer
source
internal
Prior art date
Application number
KR1020130051645A
Other languages
English (en)
Korean (ko)
Other versions
KR20140026239A (ko
Inventor
구오하오 차오
시안용 푸
치안쳉 마
치안롱 위
Original Assignee
세미컨덕터 매뉴팩춰링 인터내셔널 (상하이) 코포레이션
세미컨덕터 매뉴팩춰링 인터내셔널 (베이징) 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세미컨덕터 매뉴팩춰링 인터내셔널 (상하이) 코포레이션, 세미컨덕터 매뉴팩춰링 인터내셔널 (베이징) 코포레이션 filed Critical 세미컨덕터 매뉴팩춰링 인터내셔널 (상하이) 코포레이션
Publication of KR20140026239A publication Critical patent/KR20140026239A/ko
Application granted granted Critical
Publication of KR101446661B1 publication Critical patent/KR101446661B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76865—Selective removal of parts of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020130051645A 2012-08-23 2013-05-08 반도체 소자 구조체의 제조 방법 KR101446661B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201210303054.6A CN103633026A (zh) 2012-08-23 2012-08-23 一种半导体器件结构及其制作方法
CN201210303054.6 2012-08-23

Publications (2)

Publication Number Publication Date
KR20140026239A KR20140026239A (ko) 2014-03-05
KR101446661B1 true KR101446661B1 (ko) 2014-10-01

Family

ID=50213902

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130051645A KR101446661B1 (ko) 2012-08-23 2013-05-08 반도체 소자 구조체의 제조 방법

Country Status (3)

Country Link
KR (1) KR101446661B1 (zh)
CN (1) CN103633026A (zh)
TW (1) TWI550869B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107464782A (zh) * 2016-06-03 2017-12-12 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法、电子装置
CN107464809A (zh) * 2016-06-03 2017-12-12 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法、电子装置
CN108807268B (zh) * 2017-04-26 2020-10-09 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN109872969A (zh) * 2017-12-01 2019-06-11 中芯国际集成电路制造(上海)有限公司 半导体器件制造方法及半导体器件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000006579A (ko) * 1998-06-30 2000-01-25 마찌다 가쯔히꼬 반도체장치및그의제조방법
KR20000023287A (ko) * 1998-09-18 2000-04-25 가네꼬 히사시 불휘발성 반도체 기억 장치 및 그 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333255B1 (en) * 1997-08-21 2001-12-25 Matsushita Electronics Corporation Method for making semiconductor device containing low carbon film for interconnect structures
JPH11163329A (ja) * 1997-11-27 1999-06-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3246442B2 (ja) * 1998-05-27 2002-01-15 日本電気株式会社 半導体装置の製造方法
KR20070055729A (ko) * 2005-11-28 2007-05-31 동부일렉트로닉스 주식회사 더미 게이트를 구비하는 반도체 소자의 구조 및 그 제조방법
US7663237B2 (en) * 2005-12-27 2010-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Butted contact structure
US8039203B2 (en) * 2007-09-25 2011-10-18 Infineon Technologies Ag Integrated circuits and methods of design and manufacture thereof
US7785946B2 (en) * 2007-09-25 2010-08-31 Infineon Technologies Ag Integrated circuits and methods of design and manufacture thereof
CN102044433B (zh) * 2009-10-10 2013-02-27 复旦大学 一种混合源漏场效应晶体管及其制备方法
KR20110069305A (ko) * 2009-12-17 2011-06-23 주식회사 동부하이텍 플래시 메모리 소자 및 그 제조 방법
US8604531B2 (en) * 2010-10-15 2013-12-10 Taiwan Semiconductor Manufacturing Company Method and apparatus for improving capacitor capacitance and compatibility

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000006579A (ko) * 1998-06-30 2000-01-25 마찌다 가쯔히꼬 반도체장치및그의제조방법
KR20000023287A (ko) * 1998-09-18 2000-04-25 가네꼬 히사시 불휘발성 반도체 기억 장치 및 그 제조 방법

Also Published As

Publication number Publication date
TWI550869B (zh) 2016-09-21
CN103633026A (zh) 2014-03-12
KR20140026239A (ko) 2014-03-05
TW201409701A (zh) 2014-03-01

Similar Documents

Publication Publication Date Title
KR101376260B1 (ko) 반도체 소자 및 그 제조 방법
JP4954508B2 (ja) 半導体装置
KR100642754B1 (ko) 식각 저항성 ｌ형 스페이서를 구비하는 반도체 소자 및이의 제조 방법
CN105244284A (zh) 制造栅极结构的方法
KR101466846B1 (ko) Ｍｏｓ 트랜지스터 및 그 형성 방법
CN101714526A (zh) 半导体元件的制造方法
CN103000572A (zh) 高k金属栅极器件的接触件
EP3316289B1 (en) Method to improve the quality of a high-k dielectric layer
CN103165429A (zh) 金属栅极形成方法
KR100378839B1 (ko) 반도체 장치 및 그 제조 방법
US20070200185A1 (en) Semiconductor device and method for fabricating the same
KR101446661B1 (ko) 반도체 소자 구조체의 제조 방법
KR100731096B1 (ko) 반도체 소자 및 이의 제조방법
US8269318B2 (en) MOS device
US20130109173A1 (en) Methods for removing silicon nitride spacer, forming transistor and forming semiconductor devices
KR101433779B1 (ko) 반도체 소자 구조체의 제조 방법
JP2004055791A (ja) 半導体装置の製造方法、及び、半導体装置
KR100549006B1 (ko) 완전한 실리사이드 게이트를 갖는 모스 트랜지스터 제조방법
US11152370B2 (en) Memory structure having transistors and capacitor and manufacturing method thereof
JP6085803B2 (ja) 半導体装置の製造方法
KR100565452B1 (ko) 반도체 소자 및 그 제조 방법
KR100565448B1 (ko) 반도체 소자 및 그 제조 방법
CN111129154A (zh) 一种低压铝栅的加工方法及低压铝栅器件

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20170530

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20180919

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20190515

Year of fee payment: 6