KR101430804B1 - 스퍼터링용 산화물 소결체 타깃 및 그 제조 방법 그리고 상기 타깃을 사용한 박막의 형성 방법 및 박막 - Google Patents
스퍼터링용 산화물 소결체 타깃 및 그 제조 방법 그리고 상기 타깃을 사용한 박막의 형성 방법 및 박막 Download PDFInfo
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- KR101430804B1 KR101430804B1 KR1020120045995A KR20120045995A KR101430804B1 KR 101430804 B1 KR101430804 B1 KR 101430804B1 KR 1020120045995 A KR1020120045995 A KR 1020120045995A KR 20120045995 A KR20120045995 A KR 20120045995A KR 101430804 B1 KR101430804 B1 KR 101430804B1
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- target
- sputtering
- thin film
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011179303A JP5681590B2 (ja) | 2011-08-19 | 2011-08-19 | スパッタリング用酸化物焼結体ターゲット及びその製造方法並びに前記ターゲットを用いた薄膜の形成方法及び薄膜形成方法 |
JPJP-P-2011-179303 | 2011-08-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20130020534A KR20130020534A (ko) | 2013-02-27 |
KR101430804B1 true KR101430804B1 (ko) | 2014-08-18 |
Family
ID=47889041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020120045995A KR101430804B1 (ko) | 2011-08-19 | 2012-05-01 | 스퍼터링용 산화물 소결체 타깃 및 그 제조 방법 그리고 상기 타깃을 사용한 박막의 형성 방법 및 박막 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5681590B2 (ja) |
KR (1) | KR101430804B1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10103282B2 (en) * | 2016-09-16 | 2018-10-16 | Nano And Advanced Materials Institute Limited | Direct texture transparent conductive oxide served as electrode or intermediate layer for photovoltaic and display applications |
JP6724057B2 (ja) | 2018-03-30 | 2020-07-15 | Jx金属株式会社 | スパッタリングターゲット部材 |
CN108987283A (zh) * | 2018-06-22 | 2018-12-11 | 中山大学 | 一种镓锡氧化物半导体薄膜晶体管及其制备方法和应用 |
CN112723875B (zh) * | 2021-02-03 | 2023-01-20 | 郑州大学 | 一种氧化镓掺杂氧化锡陶瓷靶材及制备方法 |
CN116655372B (zh) * | 2023-06-25 | 2024-01-26 | 深圳众诚达应用材料股份有限公司 | 一种氧化锡基靶材及其制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000273622A (ja) * | 1999-03-26 | 2000-10-03 | Mitsui Mining & Smelting Co Ltd | 薄膜形成用材料 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000195101A (ja) * | 1998-12-28 | 2000-07-14 | Japan Energy Corp | 光ディスク保護膜及び同保護膜形成用スパッタリングタ―ゲット |
JP4018839B2 (ja) * | 1999-03-30 | 2007-12-05 | 三井金属鉱業株式会社 | SnO2系焼結体、薄膜形成用材料および導電膜 |
WO2010018707A1 (ja) * | 2008-08-11 | 2010-02-18 | 出光興産株式会社 | 酸化ガリウム-酸化スズ系酸化物焼結体及び酸化物膜 |
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2011
- 2011-08-19 JP JP2011179303A patent/JP5681590B2/ja active Active
-
2012
- 2012-05-01 KR KR1020120045995A patent/KR101430804B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000273622A (ja) * | 1999-03-26 | 2000-10-03 | Mitsui Mining & Smelting Co Ltd | 薄膜形成用材料 |
Also Published As
Publication number | Publication date |
---|---|
JP5681590B2 (ja) | 2015-03-11 |
JP2013040394A (ja) | 2013-02-28 |
KR20130020534A (ko) | 2013-02-27 |
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