KR101430804B1 - 스퍼터링용 산화물 소결체 타깃 및 그 제조 방법 그리고 상기 타깃을 사용한 박막의 형성 방법 및 박막 - Google Patents

스퍼터링용 산화물 소결체 타깃 및 그 제조 방법 그리고 상기 타깃을 사용한 박막의 형성 방법 및 박막 Download PDF

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KR101430804B1
KR101430804B1 KR1020120045995A KR20120045995A KR101430804B1 KR 101430804 B1 KR101430804 B1 KR 101430804B1 KR 1020120045995 A KR1020120045995 A KR 1020120045995A KR 20120045995 A KR20120045995 A KR 20120045995A KR 101430804 B1 KR101430804 B1 KR 101430804B1
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South Korea
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target
sputtering
thin film
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gto
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KR1020120045995A
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English (en)
Korean (ko)
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KR20130020534A (ko
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다카시 가케노
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제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
KR1020120045995A 2011-08-19 2012-05-01 스퍼터링용 산화물 소결체 타깃 및 그 제조 방법 그리고 상기 타깃을 사용한 박막의 형성 방법 및 박막 KR101430804B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-179303 2011-08-19
JP2011179303A JP5681590B2 (ja) 2011-08-19 2011-08-19 スパッタリング用酸化物焼結体ターゲット及びその製造方法並びに前記ターゲットを用いた薄膜の形成方法及び薄膜形成方法

Publications (2)

Publication Number Publication Date
KR20130020534A KR20130020534A (ko) 2013-02-27
KR101430804B1 true KR101430804B1 (ko) 2014-08-18

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Application Number Title Priority Date Filing Date
KR1020120045995A KR101430804B1 (ko) 2011-08-19 2012-05-01 스퍼터링용 산화물 소결체 타깃 및 그 제조 방법 그리고 상기 타깃을 사용한 박막의 형성 방법 및 박막

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JP (1) JP5681590B2 (ja)
KR (1) KR101430804B1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10103282B2 (en) * 2016-09-16 2018-10-16 Nano And Advanced Materials Institute Limited Direct texture transparent conductive oxide served as electrode or intermediate layer for photovoltaic and display applications
JP6724057B2 (ja) * 2018-03-30 2020-07-15 Ｊｘ金属株式会社 スパッタリングターゲット部材
CN108987283A (zh) * 2018-06-22 2018-12-11 中山大学 一种镓锡氧化物半导体薄膜晶体管及其制备方法和应用
CN112723875B (zh) * 2021-02-03 2023-01-20 郑州大学 一种氧化镓掺杂氧化锡陶瓷靶材及制备方法
CN116655372B (zh) * 2023-06-25 2024-01-26 深圳众诚达应用材料股份有限公司 一种氧化锡基靶材及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000273622A (ja) * 1999-03-26 2000-10-03 Mitsui Mining & Smelting Co Ltd 薄膜形成用材料

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195101A (ja) * 1998-12-28 2000-07-14 Japan Energy Corp 光ディスク保護膜及び同保護膜形成用スパッタリングタ―ゲット
JP4018839B2 (ja) * 1999-03-30 2007-12-05 三井金属鉱業株式会社 ＳｎＯ２系焼結体、薄膜形成用材料および導電膜
JPWO2010018707A1 (ja) * 2008-08-11 2012-01-26 出光興産株式会社 酸化ガリウム−酸化スズ系酸化物焼結体及び酸化物膜

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000273622A (ja) * 1999-03-26 2000-10-03 Mitsui Mining & Smelting Co Ltd 薄膜形成用材料

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Publication number Publication date
JP5681590B2 (ja) 2015-03-11
JP2013040394A (ja) 2013-02-28
KR20130020534A (ko) 2013-02-27

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