KR101398567B1 - 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 - Google Patents
화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 Download PDFInfo
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- KR101398567B1 KR101398567B1 KR1020137008965A KR20137008965A KR101398567B1 KR 101398567 B1 KR101398567 B1 KR 101398567B1 KR 1020137008965 A KR1020137008965 A KR 1020137008965A KR 20137008965 A KR20137008965 A KR 20137008965A KR 101398567 B1 KR101398567 B1 KR 101398567B1
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- spectrum
- spectra
- polishing
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- 238000001228 spectrum Methods 0.000 title claims abstract description 405
- 238000005498 polishing Methods 0.000 title claims abstract description 303
- 238000000034 method Methods 0.000 title claims abstract description 106
- 238000012544 monitoring process Methods 0.000 title claims abstract description 39
- 239000000126 substance Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 186
- 230000003287 optical effect Effects 0.000 claims abstract description 46
- 230000003595 spectral effect Effects 0.000 claims abstract description 43
- 238000011065 in-situ storage Methods 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000012935 Averaging Methods 0.000 claims 1
- 238000011010 flushing procedure Methods 0.000 abstract description 19
- 229920003023 plastic Polymers 0.000 abstract description 11
- 239000004033 plastic Substances 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 52
- 239000010408 film Substances 0.000 description 35
- 239000007789 gas Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 28
- 229920002635 polyurethane Polymers 0.000 description 25
- 239000004814 polyurethane Substances 0.000 description 25
- 239000010453 quartz Substances 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 239000007787 solid Substances 0.000 description 17
- 238000007517 polishing process Methods 0.000 description 16
- 239000002002 slurry Substances 0.000 description 16
- 239000013307 optical fiber Substances 0.000 description 14
- 238000005259 measurement Methods 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 239000000835 fiber Substances 0.000 description 10
- 239000012705 liquid precursor Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000010606 normalization Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 238000004590 computer program Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000004364 calculation method Methods 0.000 description 6
- 230000000875 corresponding effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000000945 filler Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000012625 in-situ measurement Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229920002457 flexible plastic Polymers 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 244000141359 Malus pumila Species 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 235000021016 apples Nutrition 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Applications Claiming Priority (13)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71068205P | 2005-08-22 | 2005-08-22 | |
US60/710,682 | 2005-08-22 | ||
US11/213,675 US7306507B2 (en) | 2005-08-22 | 2005-08-26 | Polishing pad assembly with glass or crystalline window |
US11/213,674 US7226339B2 (en) | 2005-08-22 | 2005-08-26 | Spectrum based endpointing for chemical mechanical polishing |
US11/213,674 | 2005-08-26 | ||
US11/213,344 | 2005-08-26 | ||
US11/213,675 | 2005-08-26 | ||
US11/213,344 US7764377B2 (en) | 2005-08-22 | 2005-08-26 | Spectrum based endpointing for chemical mechanical polishing |
US11/261,742 US7406394B2 (en) | 2005-08-22 | 2005-10-28 | Spectra based endpointing for chemical mechanical polishing |
US11/261,742 | 2005-10-28 | ||
US74776806P | 2006-05-19 | 2006-05-19 | |
US60/747,768 | 2006-05-19 | ||
PCT/US2006/032659 WO2007024807A2 (en) | 2005-08-22 | 2006-08-21 | Apparatus and methods for spectrum based monitoring of chemical mechanical polishing |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020087006475A Division KR101324644B1 (ko) | 2005-08-22 | 2006-08-21 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20130042059A KR20130042059A (ko) | 2013-04-25 |
KR101398567B1 true KR101398567B1 (ko) | 2014-05-22 |
Family
ID=46585383
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020137008961A KR101423579B1 (ko) | 2005-08-22 | 2006-08-21 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
KR1020147029677A KR101593927B1 (ko) | 2005-08-22 | 2006-08-21 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
KR1020137008968A KR101398570B1 (ko) | 2005-08-22 | 2006-08-21 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
KR1020147002129A KR101521414B1 (ko) | 2005-08-22 | 2006-08-21 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
KR1020137008965A KR101398567B1 (ko) | 2005-08-22 | 2006-08-21 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020137008961A KR101423579B1 (ko) | 2005-08-22 | 2006-08-21 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
KR1020147029677A KR101593927B1 (ko) | 2005-08-22 | 2006-08-21 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
KR1020137008968A KR101398570B1 (ko) | 2005-08-22 | 2006-08-21 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
KR1020147002129A KR101521414B1 (ko) | 2005-08-22 | 2006-08-21 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
Country Status (4)
Country | Link |
---|---|
JP (6) | JP5622807B2 (ja) |
KR (5) | KR101423579B1 (ja) |
CN (3) | CN105773398B (ja) |
TW (1) | TWI361454B (ja) |
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JP5654753B2 (ja) * | 2007-02-23 | 2015-01-14 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | スペクトルを使用した研磨終了点の決定 |
JP5968783B2 (ja) * | 2009-11-03 | 2016-08-10 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | スペクトルの等高線図のピーク位置と時間の関係を使用する終点方法 |
TWI496661B (zh) * | 2010-04-28 | 2015-08-21 | Applied Materials Inc | 用於光學監測之參考光譜的自動產生 |
US9579767B2 (en) | 2010-04-28 | 2017-02-28 | Applied Materials, Inc. | Automatic generation of reference spectra for optical monitoring of substrates |
US8190285B2 (en) * | 2010-05-17 | 2012-05-29 | Applied Materials, Inc. | Feedback for polishing rate correction in chemical mechanical polishing |
WO2012148716A2 (en) * | 2011-04-28 | 2012-11-01 | Applied Materials, Inc. | Varying coefficients and functions for polishing control |
US10012494B2 (en) * | 2013-10-25 | 2018-07-03 | Applied Materials, Inc. | Grouping spectral data from polishing substrates |
US9997420B2 (en) * | 2013-12-27 | 2018-06-12 | Taiwan Semiconductor Manufacturing Company Limited | Method and/or system for chemical mechanical planarization (CMP) |
US9352440B2 (en) * | 2014-04-30 | 2016-05-31 | Applied Materials, Inc. | Serial feature tracking for endpoint detection |
US10350728B2 (en) * | 2014-12-12 | 2019-07-16 | Applied Materials, Inc. | System and process for in situ byproduct removal and platen cooling during CMP |
CN104802091A (zh) * | 2015-05-19 | 2015-07-29 | 肥西县三星玻璃有限公司 | 一种玻璃磨边机 |
JP2017064899A (ja) * | 2015-10-01 | 2017-04-06 | 株式会社荏原製作所 | 研磨装置 |
KR101870701B1 (ko) | 2016-08-01 | 2018-06-25 | 에스케이실트론 주식회사 | 폴리싱 측정 장치 및 그의 연마 시간 제어 방법, 및 그를 포함한 폴리싱 제어 시스템 |
US10286517B2 (en) | 2017-08-08 | 2019-05-14 | Micron Technology, Inc. | Polishing apparatuses |
CN107520740A (zh) * | 2017-09-18 | 2017-12-29 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 一种化学机械抛光中光谱终点的检测方法、装置及系统 |
KR101890331B1 (ko) * | 2017-10-16 | 2018-08-21 | 에스케이씨 주식회사 | 누수 방지된 연마패드 및 이의 제조방법 |
CN107900788B (zh) * | 2017-11-24 | 2020-04-24 | 上海华力微电子有限公司 | 一种改善层间介质研磨工艺厚度稳定性的方法 |
KR102527659B1 (ko) | 2017-11-27 | 2023-05-03 | 삼성전자주식회사 | 공기청정기 |
WO2020068345A1 (en) * | 2018-09-24 | 2020-04-02 | Applied Materials, Inc. | Machine vision as input to a cmp process control algorithm |
CN117900999A (zh) * | 2020-06-24 | 2024-04-19 | 应用材料公司 | 使用研磨垫磨损补偿的基板层厚度确定 |
CN112025547B (zh) * | 2020-09-15 | 2021-11-02 | 泉芯集成电路制造(济南)有限公司 | 激光投影虚拟校正设备和方法 |
CN113478382B (zh) * | 2021-07-20 | 2022-11-04 | 湖北鼎汇微电子材料有限公司 | 检测窗口、化学机械抛光垫及抛光系统 |
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KR20130042059A (ko) | 2013-04-25 |
CN102626895B (zh) | 2016-05-25 |
JP2012256911A (ja) | 2012-12-27 |
KR101423579B1 (ko) | 2014-07-25 |
JP5624099B2 (ja) | 2014-11-12 |
KR101398570B1 (ko) | 2014-05-22 |
JP2013048259A (ja) | 2013-03-07 |
KR101593927B1 (ko) | 2016-02-15 |
JP2015079984A (ja) | 2015-04-23 |
CN105773398B (zh) | 2019-11-19 |
KR20130041397A (ko) | 2013-04-24 |
JP6047327B2 (ja) | 2016-12-21 |
KR20140140598A (ko) | 2014-12-09 |
JP6438288B2 (ja) | 2018-12-12 |
CN102626895A (zh) | 2012-08-08 |
JP5622806B2 (ja) | 2014-11-12 |
KR20140019484A (ko) | 2014-02-14 |
JP6052906B2 (ja) | 2016-12-27 |
TWI361454B (en) | 2012-04-01 |
CN105773398A (zh) | 2016-07-20 |
CN104526536B (zh) | 2017-09-22 |
KR101521414B1 (ko) | 2015-05-19 |
JP2015077684A (ja) | 2015-04-23 |
JP2012256912A (ja) | 2012-12-27 |
KR20130041396A (ko) | 2013-04-24 |
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