KR101396000B1 - 규소-함유 기판을 연마하기 위한 방법 및 조성물 - Google Patents

규소-함유 기판을 연마하기 위한 방법 및 조성물 Download PDF

Info

Publication number
KR101396000B1
KR101396000B1 KR1020117004512A KR20117004512A KR101396000B1 KR 101396000 B1 KR101396000 B1 KR 101396000B1 KR 1020117004512 A KR1020117004512 A KR 1020117004512A KR 20117004512 A KR20117004512 A KR 20117004512A KR 101396000 B1 KR101396000 B1 KR 101396000B1
Authority
KR
South Korea
Prior art keywords
polishing
acid
silicon
substrate
cmp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020117004512A
Other languages
English (en)
Korean (ko)
Other versions
KR20110053438A (ko
Inventor
프란시스코 드 레게 테사우로
잔 첸
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐보트 마이크로일렉트로닉스 코포레이션 filed Critical 캐보트 마이크로일렉트로닉스 코포레이션
Publication of KR20110053438A publication Critical patent/KR20110053438A/ko
Application granted granted Critical
Publication of KR101396000B1 publication Critical patent/KR101396000B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020117004512A 2008-07-30 2009-07-23 규소-함유 기판을 연마하기 위한 방법 및 조성물 Active KR101396000B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/221,023 US8247327B2 (en) 2008-07-30 2008-07-30 Methods and compositions for polishing silicon-containing substrates
US12/221,023 2008-07-30
PCT/US2009/004281 WO2010014180A2 (en) 2008-07-30 2009-07-23 Methods and compositions for polishing silicon-containing substrates

Publications (2)

Publication Number Publication Date
KR20110053438A KR20110053438A (ko) 2011-05-23
KR101396000B1 true KR101396000B1 (ko) 2014-05-16

Family

ID=41608845

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117004512A Active KR101396000B1 (ko) 2008-07-30 2009-07-23 규소-함유 기판을 연마하기 위한 방법 및 조성물

Country Status (10)

Country Link
US (2) US8247327B2 (https=)
EP (1) EP2331649B1 (https=)
JP (2) JP5628802B2 (https=)
KR (1) KR101396000B1 (https=)
CN (1) CN102149783B (https=)
IL (1) IL210029A (https=)
MY (1) MY149727A (https=)
SG (1) SG189801A1 (https=)
TW (1) TWI398917B (https=)
WO (1) WO2010014180A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230037833A (ko) * 2021-09-10 2023-03-17 성균관대학교산학협력단 연마 조성물 및 이를 이용한 연마 방법

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101268615B1 (ko) 2008-12-11 2013-06-04 히타치가세이가부시끼가이샤 Ｃｍｐ용 연마액 및 이것을 이용한 연마 방법
JP5492603B2 (ja) * 2010-03-02 2014-05-14 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP5648567B2 (ja) * 2010-05-07 2015-01-07 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
US9070632B2 (en) * 2010-10-07 2015-06-30 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers
MY163010A (en) * 2011-01-11 2017-07-31 Cabot Microelectronics Corp Metal-passivating cmp compositions and methods
CN102816530B (zh) * 2011-06-08 2016-01-27 安集微电子（上海）有限公司 一种化学机械抛光液
CN104364331A (zh) * 2012-05-23 2015-02-18 巴斯夫欧洲公司 包括在包含特定非离子表面活性剂的化学机械抛光组合物存在下进行iii-v族材料的化学机械抛光的制造半导体装置的方法
WO2014034358A1 (ja) * 2012-08-30 2014-03-06 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
EP2952550A4 (en) * 2013-02-01 2016-09-28 Fujimi Inc SURFACE LENS POLISHING COMPOSITION
JP5820404B2 (ja) * 2013-02-05 2015-11-24 株式会社東芝 平坦化方法及び平坦化装置
JP6209845B2 (ja) * 2013-04-11 2017-10-11 日立化成株式会社 研磨液、研磨液セット及び基体の研磨方法
KR102225154B1 (ko) 2013-06-12 2021-03-09 쇼와덴코머티리얼즈가부시끼가이샤 Cmp용 연마액 및 연마 방법
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
JP2016175949A (ja) * 2013-08-09 2016-10-06 コニカミノルタ株式会社 Ｃｍｐ用研磨液
US9279067B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
CN104745085B (zh) * 2013-12-25 2018-08-21 安集微电子（上海）有限公司 一种用于钴阻挡层抛光的化学机械抛光液
SG11201610969UA (en) * 2014-07-09 2017-02-27 Hitachi Chemical Co Ltd Cmp polishing liquid, and polishing method
US20160053381A1 (en) * 2014-08-22 2016-02-25 Cabot Microelectronics Corporation Germanium chemical mechanical polishing
JP6456633B2 (ja) * 2014-09-05 2019-01-23 三菱重工サーマルシステムズ株式会社 ターボ冷凍機
US9530655B2 (en) * 2014-09-08 2016-12-27 Taiwan Semiconductor Manufacting Company, Ltd. Slurry composition for chemical mechanical polishing of Ge-based materials and devices
JP6396740B2 (ja) * 2014-09-29 2018-09-26 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
JP6879995B2 (ja) * 2015-07-13 2021-06-02 シーエムシー マテリアルズ，インコーポレイティド 誘電体基板を加工するための方法及び組成物
US10619075B2 (en) 2015-07-13 2020-04-14 Cabot Microelectronics Corporation Self-stopping polishing composition and method for bulk oxide planarization
JP6599176B2 (ja) 2015-08-28 2019-10-30 三菱重工サーマルシステムズ株式会社 ターボ冷凍装置
US20170066944A1 (en) * 2015-09-03 2017-03-09 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate
WO2017069202A1 (ja) * 2015-10-23 2017-04-27 ニッタ・ハース株式会社 研磨用組成物
KR102574851B1 (ko) * 2015-12-17 2023-09-06 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
US10286518B2 (en) * 2017-01-31 2019-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
US20180244955A1 (en) 2017-02-28 2018-08-30 Versum Materials Us, Llc Chemical Mechanical Planarization of Films Comprising Elemental Silicon
JP7028592B2 (ja) * 2017-09-19 2022-03-02 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法
WO2019069370A1 (ja) 2017-10-03 2019-04-11 日立化成株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
WO2020202471A1 (ja) * 2019-04-02 2020-10-08 日立化成株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
US11162079B2 (en) 2019-05-10 2021-11-02 The Regents Of The University Of California Blood type O Rh-hypo-immunogenic pluripotent cells
WO2020231882A2 (en) 2019-05-10 2020-11-19 The Regents Of The University Of California Modified pluripotent cells
CN113004798B (zh) * 2019-12-19 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
JP7596653B2 (ja) * 2020-06-29 2024-12-10 Ａｇｃ株式会社 研磨剤及び研磨方法
WO2022070801A1 (ja) * 2020-09-29 2022-04-07 株式会社フジミインコーポレーテッド 研磨用組成物およびその利用
CN114350264B (zh) * 2022-02-18 2023-06-02 河北工业大学 一种用于钴互连结构钴膜cmp粗抛的碱性抛光液及其制备方法
CN115851134B (zh) * 2022-10-27 2024-09-10 万华化学集团电子材料有限公司 一种高精度硅片抛光组合物及其应用
CN119039991B (zh) * 2024-10-30 2025-06-03 西安蓝桥新能源科技有限公司 一种用于硅片碱刻蚀抛光的添加剂、反应液及方法与应用
CN121450242A (zh) * 2026-01-04 2026-02-03 珠海基石科技有限公司 平整化组合物及其制备方法、应用、平整化工艺和电子器件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007059A (ja) * 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
KR20050005543A (ko) * 2002-06-07 2005-01-13 캐보트 마이크로일렉트로닉스 코포레이션 저-ｋ 유전 물질의 화학적 기계적 연마 (ＣＭＰ) 방법
KR20050098288A (ko) * 2003-02-03 2005-10-11 캐보트 마이크로일렉트로닉스 코포레이션 규소-함유 유전체의 연마 방법
JP2006502579A (ja) 2002-10-11 2006-01-19 キャボット マイクロエレクトロニクス コーポレイション 両親媒性非イオン性界面活性剤を利用したｃｍｐ法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6022264A (en) 1997-02-10 2000-02-08 Rodel Inc. Polishing pad and methods relating thereto
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
JP2002528903A (ja) 1998-10-23 2002-09-03 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド 活性剤溶液を含有し、化学機械的に磨くためのスラリーシステム
EP1369906B1 (en) * 2001-02-20 2012-06-27 Hitachi Chemical Company, Ltd. Polishing compound and method for polishing substrate
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
JP2004247605A (ja) * 2003-02-14 2004-09-02 Toshiba Corp Ｃｍｐ用スラリーおよび半導体装置の製造方法
JP4267546B2 (ja) 2004-04-06 2009-05-27 花王株式会社 基板の製造方法
JP2006269910A (ja) * 2005-03-25 2006-10-05 Fuji Photo Film Co Ltd 金属用研磨液及びこれを用いた研磨方法
US7662753B2 (en) * 2005-05-12 2010-02-16 Halliburton Energy Services, Inc. Degradable surfactants and methods for use
CN101496143B (zh) * 2006-07-28 2011-04-06 昭和电工株式会社 研磨组合物
KR100814416B1 (ko) * 2006-09-28 2008-03-18 삼성전자주식회사 고 평탄화 슬러리 조성물 및 이를 이용한 화학 기계적 연마방법
US7456107B2 (en) * 2006-11-09 2008-11-25 Cabot Microelectronics Corporation Compositions and methods for CMP of low-k-dielectric materials

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007059A (ja) * 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
KR20050005543A (ko) * 2002-06-07 2005-01-13 캐보트 마이크로일렉트로닉스 코포레이션 저-ｋ 유전 물질의 화학적 기계적 연마 (ＣＭＰ) 방법
JP2006502579A (ja) 2002-10-11 2006-01-19 キャボット マイクロエレクトロニクス コーポレイション 両親媒性非イオン性界面活性剤を利用したｃｍｐ法
KR20050098288A (ko) * 2003-02-03 2005-10-11 캐보트 마이크로일렉트로닉스 코포레이션 규소-함유 유전체의 연마 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230037833A (ko) * 2021-09-10 2023-03-17 성균관대학교산학협력단 연마 조성물 및 이를 이용한 연마 방법
KR102731706B1 (ko) 2021-09-10 2024-11-15 성균관대학교산학협력단 연마 조성물 및 이를 이용한 연마 방법

Also Published As

Publication number Publication date
TWI398917B (zh) 2013-06-11
JP5952352B2 (ja) 2016-07-13
US8597540B2 (en) 2013-12-03
EP2331649A4 (en) 2013-07-03
CN102149783B (zh) 2013-06-12
CN102149783A (zh) 2011-08-10
US20100029181A1 (en) 2010-02-04
IL210029A (en) 2015-07-30
JP2011530166A (ja) 2011-12-15
JP2014209662A (ja) 2014-11-06
JP5628802B2 (ja) 2014-11-19
IL210029A0 (en) 2011-02-28
US8247327B2 (en) 2012-08-21
WO2010014180A2 (en) 2010-02-04
WO2010014180A3 (en) 2010-04-22
EP2331649B1 (en) 2018-06-13
TW201011826A (en) 2010-03-16
SG189801A1 (en) 2013-05-31
KR20110053438A (ko) 2011-05-23
MY149727A (en) 2013-10-14
US20120280170A1 (en) 2012-11-08
EP2331649A2 (en) 2011-06-15

Similar Documents

Publication Publication Date Title
KR101396000B1 (ko) 규소-함유 기판을 연마하기 위한 방법 및 조성물
KR101281967B1 (ko) 규소-함유 유전체의 연마 방법
RU2573672C2 (ru) Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки диэлектрика оксида кремния и поликремния
TWI428436B (zh) 拋光組合物及使用經胺基矽烷處理之研磨顆粒的方法
JP6673954B2 (ja) 元素状ケイ素を含む膜の化学機械平坦化
KR20130139906A (ko) 산화규소 유전체 필름 및 폴리실리콘 및/또는 질화규소 필름을 함유하는 기판의 화학적 기계적 연마 방법
CN105829487B (zh) 用于选择性地抛光基材的湿法铈土组合物、以及与其相关的方法
JP6010020B2 (ja) バルクシリコンの研磨組成物及び研磨方法
KR102778918B1 (ko) 저-k 기재의 연마 방법
WO2015019911A1 (ja) Ｃｍｐ用研磨液
KR102845253B1 (ko) 질화 규소 cmp를 위한 조성물 및 방법
JP2015035519A (ja) Ｃｍｐ用研磨液

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20110225

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
AMND Amendment
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20111024

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20121231

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20130719

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20121231

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

X091 Application refused [patent]
AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20130719

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20111024

Comment text: Amendment to Specification, etc.

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20131008

Patent event code: PE09021S01D

PX0701 Decision of registration after re-examination

Patent event date: 20140421

Comment text: Decision to Grant Registration

Patent event code: PX07013S01D

Patent event date: 20130821

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20130719

Comment text: Decision to Refuse Application

Patent event code: PX07011S01I

Patent event date: 20111024

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20140509

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20140509

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20190429

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20190429

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20200324

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20210329

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20230327

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20250507

Start annual number: 12

End annual number: 12