SG189801A1 - Methods and compositions for polishing silicon-containing substrates - Google Patents

Methods and compositions for polishing silicon-containing substrates Download PDF

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Publication number
SG189801A1
SG189801A1 SG2013029426A SG2013029426A SG189801A1 SG 189801 A1 SG189801 A1 SG 189801A1 SG 2013029426 A SG2013029426 A SG 2013029426A SG 2013029426 A SG2013029426 A SG 2013029426A SG 189801 A1 SG189801 A1 SG 189801A1
Authority
SG
Singapore
Prior art keywords
polishing
cmp
acid
substrate
composition
Prior art date
Application number
SG2013029426A
Other languages
English (en)
Inventor
Rege Thesauro Francesco De
Zhan Chen
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG189801A1 publication Critical patent/SG189801A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG2013029426A 2008-07-30 2009-07-23 Methods and compositions for polishing silicon-containing substrates SG189801A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/221,023 US8247327B2 (en) 2008-07-30 2008-07-30 Methods and compositions for polishing silicon-containing substrates

Publications (1)

Publication Number Publication Date
SG189801A1 true SG189801A1 (en) 2013-05-31

Family

ID=41608845

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2013029426A SG189801A1 (en) 2008-07-30 2009-07-23 Methods and compositions for polishing silicon-containing substrates

Country Status (10)

Country Link
US (2) US8247327B2 (https=)
EP (1) EP2331649B1 (https=)
JP (2) JP5628802B2 (https=)
KR (1) KR101396000B1 (https=)
CN (1) CN102149783B (https=)
IL (1) IL210029A (https=)
MY (1) MY149727A (https=)
SG (1) SG189801A1 (https=)
TW (1) TWI398917B (https=)
WO (1) WO2010014180A2 (https=)

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JP6879995B2 (ja) * 2015-07-13 2021-06-02 シーエムシー マテリアルズ，インコーポレイティド 誘電体基板を加工するための方法及び組成物
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WO2020202471A1 (ja) * 2019-04-02 2020-10-08 日立化成株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
US11162079B2 (en) 2019-05-10 2021-11-02 The Regents Of The University Of California Blood type O Rh-hypo-immunogenic pluripotent cells
WO2020231882A2 (en) 2019-05-10 2020-11-19 The Regents Of The University Of California Modified pluripotent cells
CN113004798B (zh) * 2019-12-19 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
JP7596653B2 (ja) * 2020-06-29 2024-12-10 Ａｇｃ株式会社 研磨剤及び研磨方法
WO2022070801A1 (ja) * 2020-09-29 2022-04-07 株式会社フジミインコーポレーテッド 研磨用組成物およびその利用
KR102731706B1 (ko) * 2021-09-10 2024-11-15 성균관대학교산학협력단 연마 조성물 및 이를 이용한 연마 방법
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CN121450242A (zh) * 2026-01-04 2026-02-03 珠海基石科技有限公司 平整化组合物及其制备方法、应用、平整化工艺和电子器件

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Also Published As

Publication number Publication date
TWI398917B (zh) 2013-06-11
JP5952352B2 (ja) 2016-07-13
US8597540B2 (en) 2013-12-03
EP2331649A4 (en) 2013-07-03
CN102149783B (zh) 2013-06-12
CN102149783A (zh) 2011-08-10
US20100029181A1 (en) 2010-02-04
IL210029A (en) 2015-07-30
JP2011530166A (ja) 2011-12-15
KR101396000B1 (ko) 2014-05-16
JP2014209662A (ja) 2014-11-06
JP5628802B2 (ja) 2014-11-19
IL210029A0 (en) 2011-02-28
US8247327B2 (en) 2012-08-21
WO2010014180A2 (en) 2010-02-04
WO2010014180A3 (en) 2010-04-22
EP2331649B1 (en) 2018-06-13
TW201011826A (en) 2010-03-16
KR20110053438A (ko) 2011-05-23
MY149727A (en) 2013-10-14
US20120280170A1 (en) 2012-11-08
EP2331649A2 (en) 2011-06-15

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