TWI398917B - 用於拋光含矽基板之方法及組合物 - Google Patents

用於拋光含矽基板之方法及組合物 Download PDF

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Publication number
TWI398917B
TWI398917B TW098122070A TW98122070A TWI398917B TW I398917 B TWI398917 B TW I398917B TW 098122070 A TW098122070 A TW 098122070A TW 98122070 A TW98122070 A TW 98122070A TW I398917 B TWI398917 B TW I398917B
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TW
Taiwan
Prior art keywords
polishing
cmp
acid
surfactant
composition
Prior art date
Application number
TW098122070A
Other languages
English (en)
Chinese (zh)
Other versions
TW201011826A (en
Inventor
塞沙洛 法蘭西斯可 迪瑞
陳湛
Original Assignee
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW201011826A publication Critical patent/TW201011826A/zh
Application granted granted Critical
Publication of TWI398917B publication Critical patent/TWI398917B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW098122070A 2008-07-30 2009-06-30 用於拋光含矽基板之方法及組合物 TWI398917B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/221,023 US8247327B2 (en) 2008-07-30 2008-07-30 Methods and compositions for polishing silicon-containing substrates

Publications (2)

Publication Number Publication Date
TW201011826A TW201011826A (en) 2010-03-16
TWI398917B true TWI398917B (zh) 2013-06-11

Family

ID=41608845

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098122070A TWI398917B (zh) 2008-07-30 2009-06-30 用於拋光含矽基板之方法及組合物

Country Status (10)

Country Link
US (2) US8247327B2 (https=)
EP (1) EP2331649B1 (https=)
JP (2) JP5628802B2 (https=)
KR (1) KR101396000B1 (https=)
CN (1) CN102149783B (https=)
IL (1) IL210029A (https=)
MY (1) MY149727A (https=)
SG (1) SG189801A1 (https=)
TW (1) TWI398917B (https=)
WO (1) WO2010014180A2 (https=)

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JP5820404B2 (ja) * 2013-02-05 2015-11-24 株式会社東芝 平坦化方法及び平坦化装置
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JP6879995B2 (ja) * 2015-07-13 2021-06-02 シーエムシー マテリアルズ，インコーポレイティド 誘電体基板を加工するための方法及び組成物
US10619075B2 (en) 2015-07-13 2020-04-14 Cabot Microelectronics Corporation Self-stopping polishing composition and method for bulk oxide planarization
JP6599176B2 (ja) 2015-08-28 2019-10-30 三菱重工サーマルシステムズ株式会社 ターボ冷凍装置
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KR102574851B1 (ko) * 2015-12-17 2023-09-06 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
US10286518B2 (en) * 2017-01-31 2019-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
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JP7028592B2 (ja) * 2017-09-19 2022-03-02 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法
WO2019069370A1 (ja) 2017-10-03 2019-04-11 日立化成株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
WO2020202471A1 (ja) * 2019-04-02 2020-10-08 日立化成株式会社 研磨液、研磨液セット、研磨方法及び欠陥抑制方法
US11162079B2 (en) 2019-05-10 2021-11-02 The Regents Of The University Of California Blood type O Rh-hypo-immunogenic pluripotent cells
WO2020231882A2 (en) 2019-05-10 2020-11-19 The Regents Of The University Of California Modified pluripotent cells
CN113004798B (zh) * 2019-12-19 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
JP7596653B2 (ja) * 2020-06-29 2024-12-10 Ａｇｃ株式会社 研磨剤及び研磨方法
WO2022070801A1 (ja) * 2020-09-29 2022-04-07 株式会社フジミインコーポレーテッド 研磨用組成物およびその利用
KR102731706B1 (ko) * 2021-09-10 2024-11-15 성균관대학교산학협력단 연마 조성물 및 이를 이용한 연마 방법
CN114350264B (zh) * 2022-02-18 2023-06-02 河北工业大学 一种用于钴互连结构钴膜cmp粗抛的碱性抛光液及其制备方法
CN115851134B (zh) * 2022-10-27 2024-09-10 万华化学集团电子材料有限公司 一种高精度硅片抛光组合物及其应用
CN119039991B (zh) * 2024-10-30 2025-06-03 西安蓝桥新能源科技有限公司 一种用于硅片碱刻蚀抛光的添加剂、反应液及方法与应用
CN121450242A (zh) * 2026-01-04 2026-02-03 珠海基石科技有限公司 平整化组合物及其制备方法、应用、平整化工艺和电子器件

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Also Published As

Publication number Publication date
JP5952352B2 (ja) 2016-07-13
US8597540B2 (en) 2013-12-03
EP2331649A4 (en) 2013-07-03
CN102149783B (zh) 2013-06-12
CN102149783A (zh) 2011-08-10
US20100029181A1 (en) 2010-02-04
IL210029A (en) 2015-07-30
JP2011530166A (ja) 2011-12-15
KR101396000B1 (ko) 2014-05-16
JP2014209662A (ja) 2014-11-06
JP5628802B2 (ja) 2014-11-19
IL210029A0 (en) 2011-02-28
US8247327B2 (en) 2012-08-21
WO2010014180A2 (en) 2010-02-04
WO2010014180A3 (en) 2010-04-22
EP2331649B1 (en) 2018-06-13
TW201011826A (en) 2010-03-16
SG189801A1 (en) 2013-05-31
KR20110053438A (ko) 2011-05-23
MY149727A (en) 2013-10-14
US20120280170A1 (en) 2012-11-08
EP2331649A2 (en) 2011-06-15

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