KR101308100B1 - 강화층을 구비한 반도체칩 - Google Patents

강화층을 구비한 반도체칩 Download PDF

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Publication number
KR101308100B1
KR101308100B1 KR1020117021554A KR20117021554A KR101308100B1 KR 101308100 B1 KR101308100 B1 KR 101308100B1 KR 1020117021554 A KR1020117021554 A KR 1020117021554A KR 20117021554 A KR20117021554 A KR 20117021554A KR 101308100 B1 KR101308100 B1 KR 101308100B1
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KR
South Korea
Prior art keywords
semiconductor chip
channel
frame portion
passivation layer
layer
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KR1020117021554A
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Korean (ko)
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KR20110126707A (ko
Inventor
마이클 수
프랑크 쿠에첸메이스터
제이미 브라보
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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Publication of KR20110126707A publication Critical patent/KR20110126707A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/856—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
KR1020117021554A 2009-02-18 2010-02-17 강화층을 구비한 반도체칩 Active KR101308100B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/388,092 US7897433B2 (en) 2009-02-18 2009-02-18 Semiconductor chip with reinforcement layer and method of making the same
US12/388,092 2009-02-18
PCT/US2010/024462 WO2010096473A2 (en) 2009-02-18 2010-02-17 Semiconductor chip with reinforcement layer

Publications (2)

Publication Number Publication Date
KR20110126707A KR20110126707A (ko) 2011-11-23
KR101308100B1 true KR101308100B1 (ko) 2013-09-12

Family

ID=42224974

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117021554A Active KR101308100B1 (ko) 2009-02-18 2010-02-17 강화층을 구비한 반도체칩

Country Status (7)

Country Link
US (1) US7897433B2 (https=)
EP (1) EP2399284B1 (https=)
JP (1) JP5576885B2 (https=)
KR (1) KR101308100B1 (https=)
CN (1) CN102318051B (https=)
SG (1) SG173447A1 (https=)
WO (1) WO2010096473A2 (https=)

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US8058108B2 (en) 2010-03-10 2011-11-15 Ati Technologies Ulc Methods of forming semiconductor chip underfill anchors
US8476115B2 (en) 2011-05-03 2013-07-02 Stats Chippac, Ltd. Semiconductor device and method of mounting cover to semiconductor die and interposer with adhesive material
US8624404B1 (en) 2012-06-25 2014-01-07 Advanced Micro Devices, Inc. Integrated circuit package having offset vias
US8937009B2 (en) 2013-04-25 2015-01-20 International Business Machines Corporation Far back end of the line metallization method and structures
TWI467711B (zh) * 2013-09-10 2015-01-01 頎邦科技股份有限公司 半導體結構
US9466547B1 (en) 2015-06-09 2016-10-11 Globalfoundries Inc. Passivation layer topography
US9589920B2 (en) * 2015-07-01 2017-03-07 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Chip package
US9779940B2 (en) * 2015-07-01 2017-10-03 Zhuahai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Chip package
US20200251683A1 (en) * 2019-01-31 2020-08-06 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Organic light emitting diode display panel and preparation method thereof
EP3800660B1 (en) 2019-10-02 2025-02-19 STMicroelectronics S.r.l. Silicon carbide power device with improved robustness and corresponding manufacturing process
US11990408B2 (en) * 2020-03-27 2024-05-21 Intel Corporation WLCSP reliability improvement for package edges including package shielding
KR102798789B1 (ko) 2020-07-09 2025-04-22 삼성전자주식회사 반도체 패키지
CN114141614B (zh) 2020-09-04 2025-11-04 意法半导体股份有限公司 电子设备元件制造方法、相关元件、电子设备和电子装置
JP7758501B2 (ja) 2020-09-04 2025-10-22 エスティーマイクロエレクトロニクス エス．アール．エル． 信頼性を改善した電子装置の要素の製造方法、及び関連要素、電子装置、及び電子機器
JP2026510132A (ja) 2022-10-31 2026-04-01 キョーセラ・エーブイエックス・コンポーネンツ・コーポレーション 多層コンデンサ

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US6022791A (en) * 1997-10-15 2000-02-08 International Business Machines Corporation Chip crack stop
US20040026785A1 (en) 2002-08-12 2004-02-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US20090032909A1 (en) 2007-08-03 2009-02-05 Brofman Peter J Semiconductor chips with crack stop regions for reducing crack propagation from chip edges/corners

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JPH03133161A (ja) * 1989-10-19 1991-06-06 Toshiba Corp 半導体装置
US6324069B1 (en) 1997-10-29 2001-11-27 Hestia Technologies, Inc. Chip package with molded underfill
US6049124A (en) 1997-12-10 2000-04-11 Intel Corporation Semiconductor package
JP2000269386A (ja) 1999-03-15 2000-09-29 Texas Instr Japan Ltd 半導体装置
JP3521383B2 (ja) * 1999-04-28 2004-04-19 新光電気工業株式会社 半導体装置及びその製造方法
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JP2004200532A (ja) * 2002-12-20 2004-07-15 Renesas Technology Corp 半導体装置およびその製造方法
JP4346333B2 (ja) 2003-03-26 2009-10-21 新光電気工業株式会社 半導体素子を内蔵した多層回路基板の製造方法
US7223673B2 (en) * 2004-07-15 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device with crack prevention ring
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US6022791A (en) * 1997-10-15 2000-02-08 International Business Machines Corporation Chip crack stop
US20040026785A1 (en) 2002-08-12 2004-02-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US20090032909A1 (en) 2007-08-03 2009-02-05 Brofman Peter J Semiconductor chips with crack stop regions for reducing crack propagation from chip edges/corners

Also Published As

Publication number Publication date
CN102318051A (zh) 2012-01-11
JP5576885B2 (ja) 2014-08-20
WO2010096473A3 (en) 2011-02-03
US20100207281A1 (en) 2010-08-19
EP2399284B1 (en) 2015-06-17
US7897433B2 (en) 2011-03-01
SG173447A1 (en) 2011-09-29
EP2399284A2 (en) 2011-12-28
CN102318051B (zh) 2014-02-26
KR20110126707A (ko) 2011-11-23
WO2010096473A2 (en) 2010-08-26
JP2012518282A (ja) 2012-08-09

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