CN102318051B - 具有加固层的半导体芯片 - Google Patents

具有加固层的半导体芯片 Download PDF

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Publication number
CN102318051B
CN102318051B CN201080008014.8A CN201080008014A CN102318051B CN 102318051 B CN102318051 B CN 102318051B CN 201080008014 A CN201080008014 A CN 201080008014A CN 102318051 B CN102318051 B CN 102318051B
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CN
China
Prior art keywords
semiconductor chip
frame part
layer
raceway groove
passivation layer
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Application number
CN201080008014.8A
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English (en)
Chinese (zh)
Other versions
CN102318051A (zh
Inventor
M·苏
F·屈兴迈斯特
J·布拉沃
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Publication date
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Publication of CN102318051A publication Critical patent/CN102318051A/zh
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Publication of CN102318051B publication Critical patent/CN102318051B/zh
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/012Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/853On the same surface
    • H10W72/856Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
CN201080008014.8A 2009-02-18 2010-02-17 具有加固层的半导体芯片 Active CN102318051B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/388,092 US7897433B2 (en) 2009-02-18 2009-02-18 Semiconductor chip with reinforcement layer and method of making the same
US12/388,092 2009-02-18
PCT/US2010/024462 WO2010096473A2 (en) 2009-02-18 2010-02-17 Semiconductor chip with reinforcement layer

Publications (2)

Publication Number Publication Date
CN102318051A CN102318051A (zh) 2012-01-11
CN102318051B true CN102318051B (zh) 2014-02-26

Family

ID=42224974

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080008014.8A Active CN102318051B (zh) 2009-02-18 2010-02-17 具有加固层的半导体芯片

Country Status (7)

Country Link
US (1) US7897433B2 (https=)
EP (1) EP2399284B1 (https=)
JP (1) JP5576885B2 (https=)
KR (1) KR101308100B1 (https=)
CN (1) CN102318051B (https=)
SG (1) SG173447A1 (https=)
WO (1) WO2010096473A2 (https=)

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US8058108B2 (en) 2010-03-10 2011-11-15 Ati Technologies Ulc Methods of forming semiconductor chip underfill anchors
US8476115B2 (en) 2011-05-03 2013-07-02 Stats Chippac, Ltd. Semiconductor device and method of mounting cover to semiconductor die and interposer with adhesive material
US8624404B1 (en) 2012-06-25 2014-01-07 Advanced Micro Devices, Inc. Integrated circuit package having offset vias
US8937009B2 (en) 2013-04-25 2015-01-20 International Business Machines Corporation Far back end of the line metallization method and structures
TWI467711B (zh) * 2013-09-10 2015-01-01 頎邦科技股份有限公司 半導體結構
US9466547B1 (en) 2015-06-09 2016-10-11 Globalfoundries Inc. Passivation layer topography
US9589920B2 (en) * 2015-07-01 2017-03-07 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Chip package
US9779940B2 (en) * 2015-07-01 2017-10-03 Zhuahai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Chip package
US20200251683A1 (en) * 2019-01-31 2020-08-06 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Organic light emitting diode display panel and preparation method thereof
EP3800660B1 (en) 2019-10-02 2025-02-19 STMicroelectronics S.r.l. Silicon carbide power device with improved robustness and corresponding manufacturing process
US11990408B2 (en) * 2020-03-27 2024-05-21 Intel Corporation WLCSP reliability improvement for package edges including package shielding
KR102798789B1 (ko) 2020-07-09 2025-04-22 삼성전자주식회사 반도체 패키지
CN114141614B (zh) 2020-09-04 2025-11-04 意法半导体股份有限公司 电子设备元件制造方法、相关元件、电子设备和电子装置
JP7758501B2 (ja) 2020-09-04 2025-10-22 エスティーマイクロエレクトロニクス エス.アール.エル. 信頼性を改善した電子装置の要素の製造方法、及び関連要素、電子装置、及び電子機器
JP2026510132A (ja) 2022-10-31 2026-04-01 キョーセラ・エーブイエックス・コンポーネンツ・コーポレーション 多層コンデンサ

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US20040026785A1 (en) * 2002-08-12 2004-02-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US20070120269A1 (en) * 2005-11-30 2007-05-31 Advanced Semiconductor Engineering, Inc. Flip chip package and manufacturing method of the same
US20080169555A1 (en) * 2007-01-16 2008-07-17 Ati Technologies Ulc Anchor structure for an integrated circuit

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US5861658A (en) 1996-10-03 1999-01-19 International Business Machines Corporation Inorganic seal for encapsulation of an organic layer and method for making the same
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US20040026785A1 (en) * 2002-08-12 2004-02-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US20070120269A1 (en) * 2005-11-30 2007-05-31 Advanced Semiconductor Engineering, Inc. Flip chip package and manufacturing method of the same
US20080169555A1 (en) * 2007-01-16 2008-07-17 Ati Technologies Ulc Anchor structure for an integrated circuit

Also Published As

Publication number Publication date
CN102318051A (zh) 2012-01-11
JP5576885B2 (ja) 2014-08-20
WO2010096473A3 (en) 2011-02-03
KR101308100B1 (ko) 2013-09-12
US20100207281A1 (en) 2010-08-19
EP2399284B1 (en) 2015-06-17
US7897433B2 (en) 2011-03-01
SG173447A1 (en) 2011-09-29
EP2399284A2 (en) 2011-12-28
KR20110126707A (ko) 2011-11-23
WO2010096473A2 (en) 2010-08-26
JP2012518282A (ja) 2012-08-09

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