SG173447A1 - Semiconductor chip with reinforcement layer - Google Patents

Semiconductor chip with reinforcement layer Download PDF

Info

Publication number
SG173447A1
SG173447A1 SG2011053386A SG2011053386A SG173447A1 SG 173447 A1 SG173447 A1 SG 173447A1 SG 2011053386 A SG2011053386 A SG 2011053386A SG 2011053386 A SG2011053386 A SG 2011053386A SG 173447 A1 SG173447 A1 SG 173447A1
Authority
SG
Singapore
Prior art keywords
semiconductor chip
channel
frame portion
polymer layer
forming
Prior art date
Application number
SG2011053386A
Other languages
English (en)
Inventor
Michael Su
Frank Kuechenmeister
Jaime Bravo
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of SG173447A1 publication Critical patent/SG173447A1/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/012Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/853On the same surface
    • H10W72/856Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
SG2011053386A 2009-02-18 2010-02-17 Semiconductor chip with reinforcement layer SG173447A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/388,092 US7897433B2 (en) 2009-02-18 2009-02-18 Semiconductor chip with reinforcement layer and method of making the same
PCT/US2010/024462 WO2010096473A2 (en) 2009-02-18 2010-02-17 Semiconductor chip with reinforcement layer

Publications (1)

Publication Number Publication Date
SG173447A1 true SG173447A1 (en) 2011-09-29

Family

ID=42224974

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2011053386A SG173447A1 (en) 2009-02-18 2010-02-17 Semiconductor chip with reinforcement layer

Country Status (7)

Country Link
US (1) US7897433B2 (https=)
EP (1) EP2399284B1 (https=)
JP (1) JP5576885B2 (https=)
KR (1) KR101308100B1 (https=)
CN (1) CN102318051B (https=)
SG (1) SG173447A1 (https=)
WO (1) WO2010096473A2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8058108B2 (en) 2010-03-10 2011-11-15 Ati Technologies Ulc Methods of forming semiconductor chip underfill anchors
US8476115B2 (en) 2011-05-03 2013-07-02 Stats Chippac, Ltd. Semiconductor device and method of mounting cover to semiconductor die and interposer with adhesive material
US8624404B1 (en) 2012-06-25 2014-01-07 Advanced Micro Devices, Inc. Integrated circuit package having offset vias
US8937009B2 (en) 2013-04-25 2015-01-20 International Business Machines Corporation Far back end of the line metallization method and structures
TWI467711B (zh) * 2013-09-10 2015-01-01 頎邦科技股份有限公司 半導體結構
US9466547B1 (en) 2015-06-09 2016-10-11 Globalfoundries Inc. Passivation layer topography
US9589920B2 (en) * 2015-07-01 2017-03-07 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Chip package
US9779940B2 (en) * 2015-07-01 2017-10-03 Zhuahai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Chip package
US20200251683A1 (en) * 2019-01-31 2020-08-06 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Organic light emitting diode display panel and preparation method thereof
EP3800660B1 (en) 2019-10-02 2025-02-19 STMicroelectronics S.r.l. Silicon carbide power device with improved robustness and corresponding manufacturing process
US11990408B2 (en) * 2020-03-27 2024-05-21 Intel Corporation WLCSP reliability improvement for package edges including package shielding
KR102798789B1 (ko) 2020-07-09 2025-04-22 삼성전자주식회사 반도체 패키지
CN114141614B (zh) 2020-09-04 2025-11-04 意法半导体股份有限公司 电子设备元件制造方法、相关元件、电子设备和电子装置
JP7758501B2 (ja) 2020-09-04 2025-10-22 エスティーマイクロエレクトロニクス エス.アール.エル. 信頼性を改善した電子装置の要素の製造方法、及び関連要素、電子装置、及び電子機器
JP2026510132A (ja) 2022-10-31 2026-04-01 キョーセラ・エーブイエックス・コンポーネンツ・コーポレーション 多層コンデンサ

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03133161A (ja) * 1989-10-19 1991-06-06 Toshiba Corp 半導体装置
US5861658A (en) 1996-10-03 1999-01-19 International Business Machines Corporation Inorganic seal for encapsulation of an organic layer and method for making the same
US6022791A (en) 1997-10-15 2000-02-08 International Business Machines Corporation Chip crack stop
US6324069B1 (en) 1997-10-29 2001-11-27 Hestia Technologies, Inc. Chip package with molded underfill
US6049124A (en) 1997-12-10 2000-04-11 Intel Corporation Semiconductor package
JP2000269386A (ja) 1999-03-15 2000-09-29 Texas Instr Japan Ltd 半導体装置
JP3521383B2 (ja) * 1999-04-28 2004-04-19 新光電気工業株式会社 半導体装置及びその製造方法
US6122171A (en) 1999-07-30 2000-09-19 Micron Technology, Inc. Heat sink chip package and method of making
US7267148B2 (en) * 1999-08-10 2007-09-11 Michelin Recherche Et Technique S.A. Measurement of adherence between a vehicle wheel and the roadway
JP2002270735A (ja) 2001-03-13 2002-09-20 Nec Corp 半導体装置及びその製造方法
JP4088120B2 (ja) 2002-08-12 2008-05-21 株式会社ルネサステクノロジ 半導体装置
JP2004200532A (ja) * 2002-12-20 2004-07-15 Renesas Technology Corp 半導体装置およびその製造方法
JP4346333B2 (ja) 2003-03-26 2009-10-21 新光電気工業株式会社 半導体素子を内蔵した多層回路基板の製造方法
US7223673B2 (en) * 2004-07-15 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device with crack prevention ring
JP2006041239A (ja) * 2004-07-28 2006-02-09 Toshiba Corp 配線基板及び磁気ディスク装置
DE102005003390B4 (de) 2005-01-24 2007-09-13 Qimonda Ag Substrat für ein FBGA-Halbleiterbauelement
JP4675147B2 (ja) * 2005-05-10 2011-04-20 パナソニック株式会社 半導体装置
US20060278957A1 (en) 2005-06-09 2006-12-14 Zong-Huei Lin Fabrication of semiconductor integrated circuit chips
CN100461408C (zh) 2005-09-28 2009-02-11 中芯国际集成电路制造(上海)有限公司 带有密封环拐角结构的集成电路器件
TWI275187B (en) * 2005-11-30 2007-03-01 Advanced Semiconductor Eng Flip chip package and manufacturing method of the same
JP5118300B2 (ja) 2005-12-20 2013-01-16 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP2008078382A (ja) 2006-09-21 2008-04-03 Toshiba Corp 半導体装置とその製造方法
US8736039B2 (en) 2006-10-06 2014-05-27 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked structures and methods of forming stacked structures
US20080169555A1 (en) 2007-01-16 2008-07-17 Ati Technologies Ulc Anchor structure for an integrated circuit
US7732932B2 (en) 2007-08-03 2010-06-08 International Business Machines Corporation Semiconductor chips with crack stop regions for reducing crack propagation from chip edges/corners
KR100910233B1 (ko) 2008-01-02 2009-07-31 주식회사 하이닉스반도체 적층 웨이퍼 레벨 패키지
US8441804B2 (en) 2008-07-25 2013-05-14 Infineon Technologies Ag Semiconductor device and method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
CN102318051A (zh) 2012-01-11
JP5576885B2 (ja) 2014-08-20
WO2010096473A3 (en) 2011-02-03
KR101308100B1 (ko) 2013-09-12
US20100207281A1 (en) 2010-08-19
EP2399284B1 (en) 2015-06-17
US7897433B2 (en) 2011-03-01
EP2399284A2 (en) 2011-12-28
CN102318051B (zh) 2014-02-26
KR20110126707A (ko) 2011-11-23
WO2010096473A2 (en) 2010-08-26
JP2012518282A (ja) 2012-08-09

Similar Documents

Publication Publication Date Title
EP2399284B1 (en) Semiconductor chip with reinforcement layer
US11037819B2 (en) Wafer level chip scale packaging intermediate structure apparatus and method
KR101903903B1 (ko) 감소된 두께를 갖는 디바이스 패키지 및 그 형성 방법
US11913121B2 (en) Fabrication method of substrate having electrical interconnection structures
US7737563B2 (en) Semiconductor chip with reinforcement structure
US8124448B2 (en) Semiconductor chip with crack deflection structure
CN106206509B (zh) 电子封装件及其制法与基板结构
CN107342277A (zh) 封装件及其形成方法
US20200211956A1 (en) Semiconductor package with improved interposer structure
US12051616B2 (en) Wafer level chip scale packaging intermediate structure apparatus and method
CN109216215B (zh) 半导体器件和制造方法
US12148692B2 (en) Semiconductor package and manufacturing method thereof
KR101013545B1 (ko) 스택 패키지 및 그의 제조방법
US11973051B2 (en) Molded direct contact interconnect structure without capture pads and method for the same
KR100842916B1 (ko) 스택 패키지의 제조방법