KR101292025B1 - 강하고 얕은 트렌치 절연 구조들 및 얕은 트렌치 절연구조물들을 형성하는 방법 - Google Patents

강하고 얕은 트렌치 절연 구조들 및 얕은 트렌치 절연구조물들을 형성하는 방법 Download PDF

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KR101292025B1
KR101292025B1 KR1020060137758A KR20060137758A KR101292025B1 KR 101292025 B1 KR101292025 B1 KR 101292025B1 KR 1020060137758 A KR1020060137758 A KR 1020060137758A KR 20060137758 A KR20060137758 A KR 20060137758A KR 101292025 B1 KR101292025 B1 KR 101292025B1
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dielectric material
depositing
semiconductor layer
conformal
insulating structure
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KR20070072408A (ko
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아룬 난다
네이스 로시
란비르 싱
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에이저 시스템즈 엘엘시
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

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  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
KR1020060137758A 2005-12-29 2006-12-29 강하고 얕은 트렌치 절연 구조들 및 얕은 트렌치 절연구조물들을 형성하는 방법 Expired - Fee Related KR101292025B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/321,206 US7514336B2 (en) 2005-12-29 2005-12-29 Robust shallow trench isolation structures and a method for forming shallow trench isolation structures
US11/321,206 2005-12-29

Publications (2)

Publication Number Publication Date
KR20070072408A KR20070072408A (ko) 2007-07-04
KR101292025B1 true KR101292025B1 (ko) 2013-08-01

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KR1020060137758A Expired - Fee Related KR101292025B1 (ko) 2005-12-29 2006-12-29 강하고 얕은 트렌치 절연 구조들 및 얕은 트렌치 절연구조물들을 형성하는 방법

Country Status (5)

Country Link
US (2) US7514336B2 (https=)
EP (1) EP1806780A3 (https=)
JP (1) JP5579358B2 (https=)
KR (1) KR101292025B1 (https=)
CN (1) CN100501968C (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7514336B2 (en) * 2005-12-29 2009-04-07 Agere Systems Inc. Robust shallow trench isolation structures and a method for forming shallow trench isolation structures
US20110244683A1 (en) * 2010-04-01 2011-10-06 Michiaki Sano Fabricating Voids Using Slurry Protect Coat Before Chemical-Mechanical Polishing
CN103531519B (zh) * 2012-07-02 2016-03-23 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US9768055B2 (en) 2012-08-21 2017-09-19 Stmicroelectronics, Inc. Isolation regions for SOI devices
US10468529B2 (en) 2017-07-11 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure with etch stop layer
KR102661930B1 (ko) 2018-08-13 2024-04-29 삼성전자주식회사 집적회로 소자
CN109273532B (zh) * 2018-09-12 2022-03-11 上海华力微电子有限公司 应用于高压电路防静电保护的无回滞效应硅控整流器
CN116053211A (zh) * 2022-12-30 2023-05-02 联合微电子中心有限责任公司 一种防止源漏区漏电的结构及其制备方法

Citations (4)

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US20010015046A1 (en) * 1999-06-03 2001-08-23 Hong Sug-Hun Trench isolation method
JP2003151956A (ja) * 2001-11-19 2003-05-23 Sony Corp 半導体装置製造工程における窒化シリコン膜のエッチング方法
KR20040002147A (ko) * 2002-06-29 2004-01-07 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법
KR20050067555A (ko) * 2003-12-29 2005-07-05 주식회사 하이닉스반도체 반도체 소자의 제조방법

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JPH08330410A (ja) * 1995-05-31 1996-12-13 Sony Corp 素子分離方法、素子分離構造、及び半導体装置
TW388100B (en) * 1997-02-18 2000-04-21 Hitachi Ulsi Eng Corp Semiconductor deivce and process for producing the same
US6228741B1 (en) * 1998-01-13 2001-05-08 Texas Instruments Incorporated Method for trench isolation of semiconductor devices
WO1999044223A2 (en) * 1998-02-27 1999-09-02 Lsi Logic Corporation Process of shallow trench isolating active devices to avoid sub-threshold kinks arising from corner effects without additional processing
KR100280107B1 (ko) * 1998-05-07 2001-03-02 윤종용 트렌치 격리 형성 방법
KR100286127B1 (ko) * 1998-06-24 2001-04-16 윤종용 반도체 장치의 트렌치 격리 형성 방법
TW398053B (en) * 1998-07-31 2000-07-11 United Microelectronics Corp Manufacturing of shallow trench isolation
US6319794B1 (en) * 1998-10-14 2001-11-20 International Business Machines Corporation Structure and method for producing low leakage isolation devices
JP2000223704A (ja) * 1999-01-29 2000-08-11 Sony Corp 半導体装置およびその製造方法
US6500729B1 (en) * 2000-06-02 2002-12-31 Agere Systems Guardian Corp. Method for reducing dishing related issues during the formation of shallow trench isolation structures
US6921947B2 (en) * 2000-12-15 2005-07-26 Renesas Technology Corp. Semiconductor device having recessed isolation insulation film
KR100568100B1 (ko) * 2001-03-05 2006-04-05 삼성전자주식회사 트렌치형 소자 분리막 형성 방법
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JP2003151956A (ja) * 2001-11-19 2003-05-23 Sony Corp 半導体装置製造工程における窒化シリコン膜のエッチング方法
KR20040002147A (ko) * 2002-06-29 2004-01-07 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법
KR20050067555A (ko) * 2003-12-29 2005-07-05 주식회사 하이닉스반도체 반도체 소자의 제조방법

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US20090127651A1 (en) 2009-05-21
JP2007184588A (ja) 2007-07-19
US8022481B2 (en) 2011-09-20
EP1806780A2 (en) 2007-07-11
US7514336B2 (en) 2009-04-07
US20070152294A1 (en) 2007-07-05
CN100501968C (zh) 2009-06-17
EP1806780A3 (en) 2011-06-01
CN1992194A (zh) 2007-07-04
JP5579358B2 (ja) 2014-08-27
KR20070072408A (ko) 2007-07-04

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