KR101287697B1 - Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 - Google Patents

Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 Download PDF

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Publication number
KR101287697B1
KR101287697B1 KR1020087016849A KR20087016849A KR101287697B1 KR 101287697 B1 KR101287697 B1 KR 101287697B1 KR 1020087016849 A KR1020087016849 A KR 1020087016849A KR 20087016849 A KR20087016849 A KR 20087016849A KR 101287697 B1 KR101287697 B1 KR 101287697B1
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substrate
layer
delete delete
reflective
adsorption layer
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KR20080092363A (ko
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요시아키 이쿠타
도시유키 우노
겐 에비하라
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아사히 가라스 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
    • Y10T428/31616—Next to polyester [e.g., alkyd]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020087016849A 2006-01-12 2007-01-12 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 Active KR101287697B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/330,205 2006-01-12
US11/330,205 US7678511B2 (en) 2006-01-12 2006-01-12 Reflective-type mask blank for EUV lithography
PCT/JP2007/050845 WO2007081059A2 (en) 2006-01-12 2007-01-12 Reflective-type mask blank for euv lithography

Publications (2)

Publication Number Publication Date
KR20080092363A KR20080092363A (ko) 2008-10-15
KR101287697B1 true KR101287697B1 (ko) 2013-07-24

Family

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Family Applications (1)

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KR1020087016849A Active KR101287697B1 (ko) 2006-01-12 2007-01-12 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크

Country Status (7)

Country Link
US (2) US7678511B2 (https=)
EP (3) EP2278395A1 (https=)
JP (2) JP4862892B2 (https=)
KR (1) KR101287697B1 (https=)
AT (1) ATE533084T1 (https=)
TW (1) TWI452418B (https=)
WO (1) WO2007081059A2 (https=)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5082857B2 (ja) * 2005-12-12 2012-11-28 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の導電膜付基板
JP4532533B2 (ja) * 2007-09-18 2010-08-25 アドバンスド・マスク・インスペクション・テクノロジー株式会社 Ｅｕｖ露光用マスクブランクおよびｅｕｖ露光用マスク
JP4663749B2 (ja) * 2008-03-11 2011-04-06 大日本印刷株式会社 反射型マスクの検査方法および製造方法
EP2256789B1 (en) * 2008-03-18 2012-07-04 Asahi Glass Company, Limited Reflective mask blank for euv lithography
JP2010135732A (ja) * 2008-08-01 2010-06-17 Asahi Glass Co Ltd Ｅｕｖマスクブランクス用基板
KR20110065439A (ko) * 2008-09-05 2011-06-15 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
TWI464529B (zh) * 2009-12-09 2014-12-11 旭硝子股份有限公司 EUV microfilm with anti-reflective substrate, EUV microsurgical reflective mask substrate, EUV microsurgical reflective mask and manufacturing method of the reflective substrate
KR20130007537A (ko) 2010-03-02 2013-01-18 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
JP5560776B2 (ja) * 2010-03-03 2014-07-30 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクスの製造方法
DE102011079933A1 (de) * 2010-08-19 2012-02-23 Carl Zeiss Smt Gmbh Optisches Element für die UV- oder EUV-Lithographie
KR101857844B1 (ko) 2011-02-04 2018-05-14 아사히 가라스 가부시키가이샤 도전막이 형성된 기판, 다층 반사막이 형성된 기판, 및 ｅｕｖ 리소그래피용 반사형 마스크 블랭크
JP5950535B2 (ja) * 2011-10-25 2016-07-13 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
CN103858209B (zh) * 2011-09-28 2017-06-06 凸版印刷株式会社 反射型曝光用掩模坯及反射型曝光用掩模
EP2581789B1 (en) * 2011-10-14 2020-04-29 Fundació Institut de Ciències Fotòniques Optically transparent and electrically conductive coatings and method for their deposition on a substrate
JP6157874B2 (ja) * 2012-03-19 2017-07-05 Hoya株式会社 Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法
KR20140016662A (ko) 2012-07-30 2014-02-10 에스케이하이닉스 주식회사 극자외선 리소그래피용 마스크 및 그 제조방법, 마스크 정렬도 에러 보정방법
US9377679B2 (en) 2012-07-31 2016-06-28 Hoya Corporation Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device
WO2014050891A1 (ja) 2012-09-28 2014-04-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびにｅｕｖリソグラフィ用反射型マスクおよびその製造方法
US9664997B2 (en) * 2012-11-08 2017-05-30 Hoya Corporation Method of manufacturing mask blank and method of manufacturing transfer mask
KR102205778B1 (ko) * 2012-11-20 2021-01-21 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 마스크 블랭크의 제조방법, 전사용 마스크의 제조방법 및 반도체 디바이스의 제조방법
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US9632411B2 (en) 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US9417515B2 (en) 2013-03-14 2016-08-16 Applied Materials, Inc. Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
US9612521B2 (en) 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP6263051B2 (ja) * 2013-03-13 2018-01-17 Hoya株式会社 ハーフトーン型位相シフトマスクブランクの製造方法
DE102013107192A1 (de) * 2013-07-08 2015-01-08 Carl Zeiss Laser Optics Gmbh Reflektives optisches Element für streifenden Einfall im EUV-Wellenlängenbereich
JP6303346B2 (ja) * 2013-09-09 2018-04-04 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
KR101877896B1 (ko) * 2013-09-27 2018-07-12 호야 가부시키가이샤 도전막 부착 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조방법
US10691013B2 (en) 2013-12-22 2020-06-23 Applied Materials, Inc. Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof
JP2016122751A (ja) * 2014-12-25 2016-07-07 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに多層反射膜付き基板、反射型マスクブランク及び半導体装置の製造方法
SG11201710317RA (en) * 2015-06-17 2018-01-30 Hoya Corp Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
CA3021916A1 (en) * 2016-04-25 2017-11-02 Asml Netherlands B.V. A membrane for euv lithography
US10775693B2 (en) * 2016-12-07 2020-09-15 Fundacio Institut De Ciencies Fotoniques Transparent and electrically conductive coatings containing nitrides, borides or carbides
JP6904234B2 (ja) * 2017-12-15 2021-07-14 Ａｇｃ株式会社 マスクブランク用基板およびマスクブランク
WO2019131506A1 (ja) * 2017-12-27 2019-07-04 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
US11448955B2 (en) * 2018-09-27 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask for lithography process and method for manufacturing the same
US11119398B2 (en) * 2018-09-28 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks
EP3882698A4 (en) * 2018-11-15 2022-08-17 Toppan Printing Co., Ltd. BLANK REFLECTIVE PHOTOMASK AND REFLECTIVE PHOTOMASK
KR102798354B1 (ko) * 2019-01-14 2025-04-23 삼성전자주식회사 포토 마스크, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법
KR20220006543A (ko) * 2019-05-21 2022-01-17 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
JP7689790B2 (ja) * 2019-09-02 2025-06-09 Hoya株式会社 反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法
CN113253563B (zh) * 2020-05-26 2024-12-27 台湾积体电路制造股份有限公司 Euv光掩模及其制造方法
US11506969B2 (en) 2020-05-26 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
WO2024195577A1 (ja) * 2023-03-17 2024-09-26 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよび導電膜付き基板
JP2025095450A (ja) * 2023-12-14 2025-06-26 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、および半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050238922A1 (en) * 2003-12-25 2005-10-27 Hoya Corporation Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6098408A (en) * 1998-11-11 2000-08-08 Advanced Micro Devices System for controlling reflection reticle temperature in microlithography
JP2000208594A (ja) 1999-01-08 2000-07-28 Nissin Electric Co Ltd ガラス基板の吸着保持方法
AU5597000A (en) 1999-06-07 2000-12-28 Regents Of The University Of California, The Coatings on reflective mask substrates
US6737201B2 (en) * 2000-11-22 2004-05-18 Hoya Corporation Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device
JP3939132B2 (ja) * 2000-11-22 2007-07-04 Ｈｏｙａ株式会社 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法
JP4390418B2 (ja) 2001-02-14 2009-12-24 Ｈｏｙａ株式会社 Ｅｕｖ露光用反射型マスクブランクおよびｅｕｖ露光用反射型マスク並びに半導体の製造方法
DE10206143B4 (de) * 2001-02-14 2006-11-16 Hoya Corp. Reflektierender Maskenrohling und reflektierende Maske für EUV-Belichtung und Verfahren zum Herstellen der Maske
JP2002299228A (ja) * 2001-04-03 2002-10-11 Nikon Corp レチクル、それを用いた露光装置及び露光方法
DE10245204B4 (de) * 2001-09-28 2008-02-07 Hoya Corp. Maskenrohling
US7129010B2 (en) * 2002-08-02 2006-10-31 Schott Ag Substrates for in particular microlithography
DE10255605B4 (de) * 2002-11-28 2005-07-07 Infineon Technologies Ag Reflektionsmaske zur Projektion einer Struktur auf einen Halbleiterwafer sowie Verfahren zu deren Herstellung
US6806007B1 (en) * 2003-05-02 2004-10-19 Advanced Micro Devices, Inc. EUV mask which facilitates electro-static chucking
CN100537053C (zh) * 2003-09-29 2009-09-09 Hoya株式会社 掩膜坯及掩膜坯的制造方法
JP4525893B2 (ja) * 2003-10-24 2010-08-18 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
US6984475B1 (en) * 2003-11-03 2006-01-10 Advanced Micro Devices, Inc. Extreme ultraviolet (EUV) lithography masks
JP2005210093A (ja) 2003-12-25 2005-08-04 Hoya Corp 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法
US7230695B2 (en) * 2004-07-08 2007-06-12 Asahi Glass Company, Ltd. Defect repair device and defect repair method
JP2006267595A (ja) * 2005-03-24 2006-10-05 Toshiba Corp マスクブランクスとその製造方法及び使用方法、並びにマスクとその製造方法及び使用方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050238922A1 (en) * 2003-12-25 2005-10-27 Hoya Corporation Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them

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US20070160916A1 (en) 2007-07-12
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ATE533084T1 (de) 2011-11-15
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US7960077B2 (en) 2011-06-14
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