KR101284394B1 - 박막 퇴적용 분자선원과 그 분자선량 제어방법 - Google Patents

박막 퇴적용 분자선원과 그 분자선량 제어방법 Download PDF

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Publication number
KR101284394B1
KR101284394B1 KR1020060042963A KR20060042963A KR101284394B1 KR 101284394 B1 KR101284394 B1 KR 101284394B1 KR 1020060042963 A KR1020060042963 A KR 1020060042963A KR 20060042963 A KR20060042963 A KR 20060042963A KR 101284394 B1 KR101284394 B1 KR 101284394B1
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South Korea
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molecular
thin film
heating
crucible
valve
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Korean (ko)
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KR20070047201A (ko
Inventor
오사무 고바야시
도시히코 이시다
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쵸슈 산교 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020060042963A 2005-11-01 2006-05-12 박막 퇴적용 분자선원과 그 분자선량 제어방법 Active KR101284394B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005318172A JP4673190B2 (ja) 2005-11-01 2005-11-01 薄膜堆積用分子線源とその分子線量制御方法
JPJP-P-2005-00318172 2005-11-01

Publications (2)

Publication Number Publication Date
KR20070047201A KR20070047201A (ko) 2007-05-04
KR101284394B1 true KR101284394B1 (ko) 2013-07-09

Family

ID=37994635

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060042963A Active KR101284394B1 (ko) 2005-11-01 2006-05-12 박막 퇴적용 분자선원과 그 분자선량 제어방법

Country Status (5)

Country Link
US (2) US7682670B2 (enExample)
JP (1) JP4673190B2 (enExample)
KR (1) KR101284394B1 (enExample)
CN (1) CN1958838A (enExample)
TW (1) TWI398557B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110014653A (ko) * 2008-05-19 2011-02-11 이 아이 듀폰 디 네모아 앤드 캄파니 전자 소자에서 증기 코팅 장치 및 방법
JP5840055B2 (ja) * 2012-03-29 2016-01-06 日立造船株式会社 蒸着装置
FR2998045B1 (fr) * 2012-11-12 2018-08-24 Electricite De France Dispositif pour le traitement thermique d'un materiau et enceinte comprenant un tel dispositif
CN105002465B (zh) * 2015-08-14 2017-12-19 西安工业大学 一种热蒸发镀膜方法及其装置
JP2019508571A (ja) * 2017-01-31 2019-03-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 材料堆積装置、真空堆積システム、及び真空堆積を行う方法
JP6931597B2 (ja) * 2017-11-29 2021-09-08 長州産業株式会社 蒸着装置及び蒸着方法
CN108103453B (zh) * 2017-12-25 2024-10-25 浙江工业大学 一种基于球阀的遮盖式表面梯度薄膜制备装置
JP2022154016A (ja) * 2021-03-30 2022-10-13 セイコーエプソン株式会社 分子線エピタキシャル成長装置、結晶成長方法及び発光素子の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005298926A (ja) * 2004-04-14 2005-10-27 Hitachi Zosen Corp 蒸着装置

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
US4518846A (en) * 1984-06-11 1985-05-21 International Business Machines Corporation Heater assembly for molecular beam epitaxy furnace
JPH0653635B2 (ja) * 1985-05-14 1994-07-20 日本電信電話株式会社 分子線エピタキシャル成長法
EP0271351B1 (en) * 1986-12-10 1993-06-16 Fuji Seiki Inc. Vacuum evaporating apparatus
JP2676270B2 (ja) * 1990-07-10 1997-11-12 三菱電機株式会社 電子ビーム加工機の目合せ検出装置
US5336324A (en) * 1991-12-04 1994-08-09 Emcore Corporation Apparatus for depositing a coating on a substrate
JP2719283B2 (ja) * 1992-08-26 1998-02-25 隆文 八百 低温用クヌ−ドセンセル
US5398641A (en) * 1993-07-27 1995-03-21 Texas Instruments Incorporated Method for p-type doping of semiconductor structures formed of group II and group VI elements
US5616180A (en) * 1994-12-22 1997-04-01 Northrop Grumman Corporation Aparatus for varying the flux of a molecular beam
US5820681A (en) * 1995-05-03 1998-10-13 Chorus Corporation Unibody crucible and effusion cell employing such a crucible
US6030458A (en) * 1997-02-14 2000-02-29 Chorus Corporation Phosphorus effusion source
JP3608976B2 (ja) * 1999-04-26 2005-01-12 シャープ株式会社 半導体素子の製造方法
JP3684343B2 (ja) * 2001-09-25 2005-08-17 株式会社日本ビーテック 薄膜堆積用分子線源セル
JP4013859B2 (ja) * 2003-07-17 2007-11-28 富士電機ホールディングス株式会社 有機薄膜の製造装置
EP1851355B1 (en) * 2005-02-22 2011-04-13 E-Science, Inc. Effusion cell valve

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005298926A (ja) * 2004-04-14 2005-10-27 Hitachi Zosen Corp 蒸着装置

Also Published As

Publication number Publication date
JP4673190B2 (ja) 2011-04-20
US7682670B2 (en) 2010-03-23
JP2007126303A (ja) 2007-05-24
US8025734B2 (en) 2011-09-27
TW200718811A (en) 2007-05-16
US20070095290A1 (en) 2007-05-03
US20100170434A1 (en) 2010-07-08
KR20070047201A (ko) 2007-05-04
TWI398557B (zh) 2013-06-11
CN1958838A (zh) 2007-05-09

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