TWI398557B - 薄膜堆積用分子線源及其分子線量控制方法 - Google Patents
薄膜堆積用分子線源及其分子線量控制方法 Download PDFInfo
- Publication number
- TWI398557B TWI398557B TW095113008A TW95113008A TWI398557B TW I398557 B TWI398557 B TW I398557B TW 095113008 A TW095113008 A TW 095113008A TW 95113008 A TW95113008 A TW 95113008A TW I398557 B TWI398557 B TW I398557B
- Authority
- TW
- Taiwan
- Prior art keywords
- molecular
- film
- amount
- crucible
- heating
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims description 42
- 238000000034 method Methods 0.000 title claims description 11
- 238000009825 accumulation Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims description 90
- 239000010408 film Substances 0.000 claims description 88
- 238000010438 heat treatment Methods 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 239000011368 organic material Substances 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000002070 nanowire Substances 0.000 claims 2
- 238000005401 electroluminescence Methods 0.000 description 11
- 230000005855 radiation Effects 0.000 description 10
- 239000012528 membrane Substances 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000001514 detection method Methods 0.000 description 4
- 238000009834 vaporization Methods 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- VVJKKWFAADXIJK-UHFFFAOYSA-N allylamine Natural products NCC=C VVJKKWFAADXIJK-UHFFFAOYSA-N 0.000 description 1
- -1 allylamine compound Chemical class 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004260 weight control Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005318172A JP4673190B2 (ja) | 2005-11-01 | 2005-11-01 | 薄膜堆積用分子線源とその分子線量制御方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200718811A TW200718811A (en) | 2007-05-16 |
| TWI398557B true TWI398557B (zh) | 2013-06-11 |
Family
ID=37994635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095113008A TWI398557B (zh) | 2005-11-01 | 2006-04-12 | 薄膜堆積用分子線源及其分子線量控制方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7682670B2 (enExample) |
| JP (1) | JP4673190B2 (enExample) |
| KR (1) | KR101284394B1 (enExample) |
| CN (1) | CN1958838A (enExample) |
| TW (1) | TWI398557B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110014653A (ko) * | 2008-05-19 | 2011-02-11 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 전자 소자에서 증기 코팅 장치 및 방법 |
| JP5840055B2 (ja) * | 2012-03-29 | 2016-01-06 | 日立造船株式会社 | 蒸着装置 |
| FR2998045B1 (fr) * | 2012-11-12 | 2018-08-24 | Electricite De France | Dispositif pour le traitement thermique d'un materiau et enceinte comprenant un tel dispositif |
| CN105002465B (zh) * | 2015-08-14 | 2017-12-19 | 西安工业大学 | 一种热蒸发镀膜方法及其装置 |
| JP2019508571A (ja) * | 2017-01-31 | 2019-03-28 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 材料堆積装置、真空堆積システム、及び真空堆積を行う方法 |
| JP6931597B2 (ja) * | 2017-11-29 | 2021-09-08 | 長州産業株式会社 | 蒸着装置及び蒸着方法 |
| CN108103453B (zh) * | 2017-12-25 | 2024-10-25 | 浙江工业大学 | 一种基于球阀的遮盖式表面梯度薄膜制备装置 |
| JP2022154016A (ja) * | 2021-03-30 | 2022-10-13 | セイコーエプソン株式会社 | 分子線エピタキシャル成長装置、結晶成長方法及び発光素子の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6030458A (en) * | 1997-02-14 | 2000-02-29 | Chorus Corporation | Phosphorus effusion source |
| JP2005298926A (ja) * | 2004-04-14 | 2005-10-27 | Hitachi Zosen Corp | 蒸着装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4518846A (en) * | 1984-06-11 | 1985-05-21 | International Business Machines Corporation | Heater assembly for molecular beam epitaxy furnace |
| JPH0653635B2 (ja) * | 1985-05-14 | 1994-07-20 | 日本電信電話株式会社 | 分子線エピタキシャル成長法 |
| EP0271351B1 (en) * | 1986-12-10 | 1993-06-16 | Fuji Seiki Inc. | Vacuum evaporating apparatus |
| JP2676270B2 (ja) * | 1990-07-10 | 1997-11-12 | 三菱電機株式会社 | 電子ビーム加工機の目合せ検出装置 |
| US5336324A (en) * | 1991-12-04 | 1994-08-09 | Emcore Corporation | Apparatus for depositing a coating on a substrate |
| JP2719283B2 (ja) * | 1992-08-26 | 1998-02-25 | 隆文 八百 | 低温用クヌ−ドセンセル |
| US5398641A (en) * | 1993-07-27 | 1995-03-21 | Texas Instruments Incorporated | Method for p-type doping of semiconductor structures formed of group II and group VI elements |
| US5616180A (en) * | 1994-12-22 | 1997-04-01 | Northrop Grumman Corporation | Aparatus for varying the flux of a molecular beam |
| US5820681A (en) * | 1995-05-03 | 1998-10-13 | Chorus Corporation | Unibody crucible and effusion cell employing such a crucible |
| JP3608976B2 (ja) * | 1999-04-26 | 2005-01-12 | シャープ株式会社 | 半導体素子の製造方法 |
| JP3684343B2 (ja) * | 2001-09-25 | 2005-08-17 | 株式会社日本ビーテック | 薄膜堆積用分子線源セル |
| JP4013859B2 (ja) * | 2003-07-17 | 2007-11-28 | 富士電機ホールディングス株式会社 | 有機薄膜の製造装置 |
| EP1851355B1 (en) * | 2005-02-22 | 2011-04-13 | E-Science, Inc. | Effusion cell valve |
-
2005
- 2005-11-01 JP JP2005318172A patent/JP4673190B2/ja not_active Expired - Lifetime
-
2006
- 2006-04-10 US US11/401,035 patent/US7682670B2/en not_active Expired - Fee Related
- 2006-04-12 TW TW095113008A patent/TWI398557B/zh active
- 2006-05-12 KR KR1020060042963A patent/KR101284394B1/ko active Active
- 2006-09-27 CN CNA2006101593033A patent/CN1958838A/zh active Pending
-
2010
- 2010-02-01 US US12/658,024 patent/US8025734B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6030458A (en) * | 1997-02-14 | 2000-02-29 | Chorus Corporation | Phosphorus effusion source |
| JP2005298926A (ja) * | 2004-04-14 | 2005-10-27 | Hitachi Zosen Corp | 蒸着装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4673190B2 (ja) | 2011-04-20 |
| US7682670B2 (en) | 2010-03-23 |
| JP2007126303A (ja) | 2007-05-24 |
| US8025734B2 (en) | 2011-09-27 |
| KR101284394B1 (ko) | 2013-07-09 |
| TW200718811A (en) | 2007-05-16 |
| US20070095290A1 (en) | 2007-05-03 |
| US20100170434A1 (en) | 2010-07-08 |
| KR20070047201A (ko) | 2007-05-04 |
| CN1958838A (zh) | 2007-05-09 |
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