JP4673190B2 - 薄膜堆積用分子線源とその分子線量制御方法 - Google Patents

薄膜堆積用分子線源とその分子線量制御方法 Download PDF

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Publication number
JP4673190B2
JP4673190B2 JP2005318172A JP2005318172A JP4673190B2 JP 4673190 B2 JP4673190 B2 JP 4673190B2 JP 2005318172 A JP2005318172 A JP 2005318172A JP 2005318172 A JP2005318172 A JP 2005318172A JP 4673190 B2 JP4673190 B2 JP 4673190B2
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JP
Japan
Prior art keywords
molecular
thin film
crucible
valve
dose
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Expired - Lifetime
Application number
JP2005318172A
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English (en)
Japanese (ja)
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JP2007126303A (ja
JP2007126303A5 (enExample
Inventor
理 小林
俊彦 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Choshu Industry Co Ltd
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Choshu Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Choshu Industry Co Ltd filed Critical Choshu Industry Co Ltd
Priority to JP2005318172A priority Critical patent/JP4673190B2/ja
Priority to US11/401,035 priority patent/US7682670B2/en
Priority to TW095113008A priority patent/TWI398557B/zh
Priority to KR1020060042963A priority patent/KR101284394B1/ko
Priority to CNA2006101593033A priority patent/CN1958838A/zh
Publication of JP2007126303A publication Critical patent/JP2007126303A/ja
Publication of JP2007126303A5 publication Critical patent/JP2007126303A5/ja
Priority to US12/658,024 priority patent/US8025734B2/en
Application granted granted Critical
Publication of JP4673190B2 publication Critical patent/JP4673190B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2005318172A 2005-11-01 2005-11-01 薄膜堆積用分子線源とその分子線量制御方法 Expired - Lifetime JP4673190B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005318172A JP4673190B2 (ja) 2005-11-01 2005-11-01 薄膜堆積用分子線源とその分子線量制御方法
US11/401,035 US7682670B2 (en) 2005-11-01 2006-04-10 Method for controlling the volume of a molecular beam
TW095113008A TWI398557B (zh) 2005-11-01 2006-04-12 薄膜堆積用分子線源及其分子線量控制方法
KR1020060042963A KR101284394B1 (ko) 2005-11-01 2006-05-12 박막 퇴적용 분자선원과 그 분자선량 제어방법
CNA2006101593033A CN1958838A (zh) 2005-11-01 2006-09-27 用于薄膜堆积的分子束源及控制分子束的量的方法
US12/658,024 US8025734B2 (en) 2005-11-01 2010-02-01 Method for controlling the volume of a molecular beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005318172A JP4673190B2 (ja) 2005-11-01 2005-11-01 薄膜堆積用分子線源とその分子線量制御方法

Publications (3)

Publication Number Publication Date
JP2007126303A JP2007126303A (ja) 2007-05-24
JP2007126303A5 JP2007126303A5 (enExample) 2008-12-18
JP4673190B2 true JP4673190B2 (ja) 2011-04-20

Family

ID=37994635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005318172A Expired - Lifetime JP4673190B2 (ja) 2005-11-01 2005-11-01 薄膜堆積用分子線源とその分子線量制御方法

Country Status (5)

Country Link
US (2) US7682670B2 (enExample)
JP (1) JP4673190B2 (enExample)
KR (1) KR101284394B1 (enExample)
CN (1) CN1958838A (enExample)
TW (1) TWI398557B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110014653A (ko) * 2008-05-19 2011-02-11 이 아이 듀폰 디 네모아 앤드 캄파니 전자 소자에서 증기 코팅 장치 및 방법
JP5840055B2 (ja) * 2012-03-29 2016-01-06 日立造船株式会社 蒸着装置
FR2998045B1 (fr) * 2012-11-12 2018-08-24 Electricite De France Dispositif pour le traitement thermique d'un materiau et enceinte comprenant un tel dispositif
CN105002465B (zh) * 2015-08-14 2017-12-19 西安工业大学 一种热蒸发镀膜方法及其装置
JP2019508571A (ja) * 2017-01-31 2019-03-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 材料堆積装置、真空堆積システム、及び真空堆積を行う方法
JP6931597B2 (ja) * 2017-11-29 2021-09-08 長州産業株式会社 蒸着装置及び蒸着方法
CN108103453B (zh) * 2017-12-25 2024-10-25 浙江工业大学 一种基于球阀的遮盖式表面梯度薄膜制备装置
JP2022154016A (ja) * 2021-03-30 2022-10-13 セイコーエプソン株式会社 分子線エピタキシャル成長装置、結晶成長方法及び発光素子の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4518846A (en) * 1984-06-11 1985-05-21 International Business Machines Corporation Heater assembly for molecular beam epitaxy furnace
JPH0653635B2 (ja) * 1985-05-14 1994-07-20 日本電信電話株式会社 分子線エピタキシャル成長法
EP0271351B1 (en) * 1986-12-10 1993-06-16 Fuji Seiki Inc. Vacuum evaporating apparatus
JP2676270B2 (ja) * 1990-07-10 1997-11-12 三菱電機株式会社 電子ビーム加工機の目合せ検出装置
US5336324A (en) * 1991-12-04 1994-08-09 Emcore Corporation Apparatus for depositing a coating on a substrate
JP2719283B2 (ja) * 1992-08-26 1998-02-25 隆文 八百 低温用クヌ−ドセンセル
US5398641A (en) * 1993-07-27 1995-03-21 Texas Instruments Incorporated Method for p-type doping of semiconductor structures formed of group II and group VI elements
US5616180A (en) * 1994-12-22 1997-04-01 Northrop Grumman Corporation Aparatus for varying the flux of a molecular beam
US5820681A (en) * 1995-05-03 1998-10-13 Chorus Corporation Unibody crucible and effusion cell employing such a crucible
US6030458A (en) * 1997-02-14 2000-02-29 Chorus Corporation Phosphorus effusion source
JP3608976B2 (ja) * 1999-04-26 2005-01-12 シャープ株式会社 半導体素子の製造方法
JP3684343B2 (ja) * 2001-09-25 2005-08-17 株式会社日本ビーテック 薄膜堆積用分子線源セル
JP4013859B2 (ja) * 2003-07-17 2007-11-28 富士電機ホールディングス株式会社 有機薄膜の製造装置
JP4462989B2 (ja) * 2004-04-14 2010-05-12 日立造船株式会社 蒸着装置
EP1851355B1 (en) * 2005-02-22 2011-04-13 E-Science, Inc. Effusion cell valve

Also Published As

Publication number Publication date
US7682670B2 (en) 2010-03-23
JP2007126303A (ja) 2007-05-24
US8025734B2 (en) 2011-09-27
KR101284394B1 (ko) 2013-07-09
TW200718811A (en) 2007-05-16
US20070095290A1 (en) 2007-05-03
US20100170434A1 (en) 2010-07-08
KR20070047201A (ko) 2007-05-04
TWI398557B (zh) 2013-06-11
CN1958838A (zh) 2007-05-09

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