CN1958838A - 用于薄膜堆积的分子束源及控制分子束的量的方法 - Google Patents

用于薄膜堆积的分子束源及控制分子束的量的方法 Download PDF

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Publication number
CN1958838A
CN1958838A CNA2006101593033A CN200610159303A CN1958838A CN 1958838 A CN1958838 A CN 1958838A CN A2006101593033 A CNA2006101593033 A CN A2006101593033A CN 200610159303 A CN200610159303 A CN 200610159303A CN 1958838 A CN1958838 A CN 1958838A
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CN
China
Prior art keywords
molecular beam
thin
film
crucible
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006101593033A
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English (en)
Chinese (zh)
Inventor
小林理
石田俊彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
VIEETECH JAPAN CO LTD
Original Assignee
WETA TECHNOLOGY CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WETA TECHNOLOGY CORP filed Critical WETA TECHNOLOGY CORP
Publication of CN1958838A publication Critical patent/CN1958838A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CNA2006101593033A 2005-11-01 2006-09-27 用于薄膜堆积的分子束源及控制分子束的量的方法 Pending CN1958838A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005318172A JP4673190B2 (ja) 2005-11-01 2005-11-01 薄膜堆積用分子線源とその分子線量制御方法
JP318172/05 2005-11-01

Publications (1)

Publication Number Publication Date
CN1958838A true CN1958838A (zh) 2007-05-09

Family

ID=37994635

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006101593033A Pending CN1958838A (zh) 2005-11-01 2006-09-27 用于薄膜堆积的分子束源及控制分子束的量的方法

Country Status (5)

Country Link
US (2) US7682670B2 (enExample)
JP (1) JP4673190B2 (enExample)
KR (1) KR101284394B1 (enExample)
CN (1) CN1958838A (enExample)
TW (1) TWI398557B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105002465A (zh) * 2015-08-14 2015-10-28 西安工业大学 一种热蒸发镀膜方法及其装置
CN108103453A (zh) * 2017-12-25 2018-06-01 浙江工业大学 一种基于球阀的遮盖式表面梯度薄膜制备装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201011114A (en) * 2008-05-19 2010-03-16 Du Pont Apparatus and method of vapor coating in an electronic device
JP5840055B2 (ja) * 2012-03-29 2016-01-06 日立造船株式会社 蒸着装置
FR2998045B1 (fr) * 2012-11-12 2018-08-24 Electricite De France Dispositif pour le traitement thermique d'un materiau et enceinte comprenant un tel dispositif
WO2018141365A1 (en) * 2017-01-31 2018-08-09 Applied Materials, Inc. Material deposition arrangement, vacuum deposition system and method therefor
JP6931597B2 (ja) * 2017-11-29 2021-09-08 長州産業株式会社 蒸着装置及び蒸着方法
JP2022154016A (ja) * 2021-03-30 2022-10-13 セイコーエプソン株式会社 分子線エピタキシャル成長装置、結晶成長方法及び発光素子の製造方法

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US4518846A (en) * 1984-06-11 1985-05-21 International Business Machines Corporation Heater assembly for molecular beam epitaxy furnace
JPH0653635B2 (ja) * 1985-05-14 1994-07-20 日本電信電話株式会社 分子線エピタキシャル成長法
EP0271351B1 (en) * 1986-12-10 1993-06-16 Fuji Seiki Inc. Vacuum evaporating apparatus
JP2676270B2 (ja) * 1990-07-10 1997-11-12 三菱電機株式会社 電子ビーム加工機の目合せ検出装置
US5336324A (en) * 1991-12-04 1994-08-09 Emcore Corporation Apparatus for depositing a coating on a substrate
JP2719283B2 (ja) * 1992-08-26 1998-02-25 隆文 八百 低温用クヌ−ドセンセル
US5398641A (en) * 1993-07-27 1995-03-21 Texas Instruments Incorporated Method for p-type doping of semiconductor structures formed of group II and group VI elements
US5616180A (en) * 1994-12-22 1997-04-01 Northrop Grumman Corporation Aparatus for varying the flux of a molecular beam
US5820681A (en) * 1995-05-03 1998-10-13 Chorus Corporation Unibody crucible and effusion cell employing such a crucible
US6030458A (en) * 1997-02-14 2000-02-29 Chorus Corporation Phosphorus effusion source
JP3608976B2 (ja) * 1999-04-26 2005-01-12 シャープ株式会社 半導体素子の製造方法
JP3684343B2 (ja) * 2001-09-25 2005-08-17 株式会社日本ビーテック 薄膜堆積用分子線源セル
JP4013859B2 (ja) * 2003-07-17 2007-11-28 富士電機ホールディングス株式会社 有機薄膜の製造装置
JP4462989B2 (ja) * 2004-04-14 2010-05-12 日立造船株式会社 蒸着装置
WO2006091598A2 (en) * 2005-02-22 2006-08-31 E-Science, Inc. Effusion cell valve

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105002465A (zh) * 2015-08-14 2015-10-28 西安工业大学 一种热蒸发镀膜方法及其装置
CN108103453A (zh) * 2017-12-25 2018-06-01 浙江工业大学 一种基于球阀的遮盖式表面梯度薄膜制备装置
CN108103453B (zh) * 2017-12-25 2024-10-25 浙江工业大学 一种基于球阀的遮盖式表面梯度薄膜制备装置

Also Published As

Publication number Publication date
US20100170434A1 (en) 2010-07-08
US8025734B2 (en) 2011-09-27
US7682670B2 (en) 2010-03-23
KR20070047201A (ko) 2007-05-04
JP4673190B2 (ja) 2011-04-20
TWI398557B (zh) 2013-06-11
JP2007126303A (ja) 2007-05-24
TW200718811A (en) 2007-05-16
US20070095290A1 (en) 2007-05-03
KR101284394B1 (ko) 2013-07-09

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C06 Publication
PB01 Publication
C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20071116

Address after: Yamaguchi Japan

Applicant after: VIEETECH JAPAN CO LTD

Address before: Ibaraki

Applicant before: Weta Technology Corp.

C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20070509