KR101282404B1 - 액정 표시 장치의 제조 방법 - Google Patents

액정 표시 장치의 제조 방법 Download PDF

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KR101282404B1
KR101282404B1 KR1020060085089A KR20060085089A KR101282404B1 KR 101282404 B1 KR101282404 B1 KR 101282404B1 KR 1020060085089 A KR1020060085089 A KR 1020060085089A KR 20060085089 A KR20060085089 A KR 20060085089A KR 101282404 B1 KR101282404 B1 KR 101282404B1
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region
layer
pattern
data
photoresist pattern
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KR20080021909A (ko
Inventor
최승하
오민석
김상갑
최재호
정유광
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삼성디스플레이 주식회사
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Priority to KR1020060085089A priority Critical patent/KR101282404B1/ko
Priority to JP2007224357A priority patent/JP5229775B2/ja
Priority to US11/897,769 priority patent/US7868958B2/en
Priority to EP07017301A priority patent/EP1898255B1/en
Priority to DE602007014301T priority patent/DE602007014301D1/de
Priority to CN2007103069009A priority patent/CN101221925B/zh
Publication of KR20080021909A publication Critical patent/KR20080021909A/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020060085089A 2006-09-05 2006-09-05 액정 표시 장치의 제조 방법 Active KR101282404B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020060085089A KR101282404B1 (ko) 2006-09-05 2006-09-05 액정 표시 장치의 제조 방법
JP2007224357A JP5229775B2 (ja) 2006-09-05 2007-08-30 液晶表示装置の製造方法
US11/897,769 US7868958B2 (en) 2006-09-05 2007-08-31 Manufacturing liquid crystal display with incremental removal of an insulating layer
EP07017301A EP1898255B1 (en) 2006-09-05 2007-09-04 Method of manufacturing liquid crystal display
DE602007014301T DE602007014301D1 (de) 2006-09-05 2007-09-04 Verfahren zur Herstellung einer Flüssigkristallanzeige
CN2007103069009A CN101221925B (zh) 2006-09-05 2007-09-05 液晶显示器的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060085089A KR101282404B1 (ko) 2006-09-05 2006-09-05 액정 표시 장치의 제조 방법

Publications (2)

Publication Number Publication Date
KR20080021909A KR20080021909A (ko) 2008-03-10
KR101282404B1 true KR101282404B1 (ko) 2013-07-04

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KR1020060085089A Active KR101282404B1 (ko) 2006-09-05 2006-09-05 액정 표시 장치의 제조 방법

Country Status (6)

Country Link
US (1) US7868958B2 (https=)
EP (1) EP1898255B1 (https=)
JP (1) JP5229775B2 (https=)
KR (1) KR101282404B1 (https=)
CN (1) CN101221925B (https=)
DE (1) DE602007014301D1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101522615B1 (ko) * 2008-11-05 2015-05-22 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP6076038B2 (ja) * 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 表示装置の作製方法
KR102479019B1 (ko) 2015-03-05 2022-12-19 삼성디스플레이 주식회사 플렉서블 표시장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100476366B1 (ko) * 2002-04-17 2005-03-16 엘지.필립스 엘시디 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
US20050112790A1 (en) * 2003-11-26 2005-05-26 Chih-Chieh Lan Method of manufacturing liquid crystal display
KR20050068214A (ko) * 2003-12-29 2005-07-05 엘지.필립스 엘시디 주식회사 마스크 및 이를 이용한 액정표시소자 제조방법

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JP3098345B2 (ja) * 1992-12-28 2000-10-16 富士通株式会社 薄膜トランジスタマトリクス装置及びその製造方法
JPH06250211A (ja) * 1993-02-23 1994-09-09 Hitachi Ltd 液晶表示基板とその製造方法
JP2001133804A (ja) 1999-10-29 2001-05-18 Fujitsu Ltd 液晶表示装置の製造方法
JP4565799B2 (ja) 2002-07-01 2010-10-20 大林精工株式会社 横電界方式液晶表示装置、その製造方法、走査露光装置およびミックス走査露光装置
JP2004212933A (ja) 2002-12-31 2004-07-29 Lg Phillips Lcd Co Ltd 液晶表示装置及びアレイ基板の製造方法
KR100598737B1 (ko) 2003-05-06 2006-07-10 엘지.필립스 엘시디 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
KR100499376B1 (ko) 2003-10-10 2005-07-04 엘지.필립스 엘시디 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
KR101050292B1 (ko) 2003-12-27 2011-07-19 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판의 제조방법
KR100675634B1 (ko) 2003-12-30 2007-02-01 엘지.필립스 엘시디 주식회사 액정표시소자의 제조방법
KR20050105422A (ko) 2004-05-01 2005-11-04 엘지.필립스 엘시디 주식회사 액정표시패널 및 그 제조 방법
KR101126396B1 (ko) 2004-06-25 2012-03-28 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판 및 그 제조방법
KR101061844B1 (ko) 2004-06-29 2011-09-02 삼성전자주식회사 박막 표시판의 제조 방법
KR20060023716A (ko) 2004-09-10 2006-03-15 삼성전자주식회사 반사-투과형 액정표시장치의 제조방법
KR100640620B1 (ko) * 2004-12-27 2006-11-02 삼성전자주식회사 트윈비트 셀 구조의 ｎｏｒ형 플래쉬 메모리 소자 및 그제조 방법
TWI368327B (en) * 2005-01-17 2012-07-11 Samsung Electronics Co Ltd Optical mask and manufacturing method of thin film transistor array panel using the optical mask
JP4301259B2 (ja) * 2005-09-13 2009-07-22 エプソンイメージングデバイス株式会社 液晶表示装置及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100476366B1 (ko) * 2002-04-17 2005-03-16 엘지.필립스 엘시디 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
US20050112790A1 (en) * 2003-11-26 2005-05-26 Chih-Chieh Lan Method of manufacturing liquid crystal display
KR20050068214A (ko) * 2003-12-29 2005-07-05 엘지.필립스 엘시디 주식회사 마스크 및 이를 이용한 액정표시소자 제조방법

Also Published As

Publication number Publication date
JP5229775B2 (ja) 2013-07-03
JP2008066723A (ja) 2008-03-21
DE602007014301D1 (de) 2011-06-16
CN101221925A (zh) 2008-07-16
EP1898255A1 (en) 2008-03-12
EP1898255B1 (en) 2011-05-04
US20080106685A1 (en) 2008-05-08
US7868958B2 (en) 2011-01-11
KR20080021909A (ko) 2008-03-10
CN101221925B (zh) 2011-06-29

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