KR101270705B1 - 박막 트랜지스터 기판과 이의 제조 방법 및 이를 구비한액정표시패널 - Google Patents

박막 트랜지스터 기판과 이의 제조 방법 및 이를 구비한액정표시패널 Download PDF

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KR101270705B1
KR101270705B1 KR1020060093519A KR20060093519A KR101270705B1 KR 101270705 B1 KR101270705 B1 KR 101270705B1 KR 1020060093519 A KR1020060093519 A KR 1020060093519A KR 20060093519 A KR20060093519 A KR 20060093519A KR 101270705 B1 KR101270705 B1 KR 101270705B1
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electrode
line
gate
forming
thin film
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Korean (ko)
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KR20080028130A (ko
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김봉주
유춘기
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삼성디스플레이 주식회사
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Priority to KR1020060093519A priority Critical patent/KR101270705B1/ko
Priority to JP2007011807A priority patent/JP5190593B2/ja
Priority to TW096126411A priority patent/TWI412849B/zh
Priority to US11/860,864 priority patent/US8031285B2/en
Publication of KR20080028130A publication Critical patent/KR20080028130A/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
KR1020060093519A 2006-09-26 2006-09-26 박막 트랜지스터 기판과 이의 제조 방법 및 이를 구비한액정표시패널 Active KR101270705B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020060093519A KR101270705B1 (ko) 2006-09-26 2006-09-26 박막 트랜지스터 기판과 이의 제조 방법 및 이를 구비한액정표시패널
JP2007011807A JP5190593B2 (ja) 2006-09-26 2007-01-22 薄膜トランジスタ基板及びこの製造方法、並びに薄膜トランジスタ基板これを備えた液晶表示パネル
TW096126411A TWI412849B (zh) 2006-09-26 2007-07-19 薄膜電晶體基板，製造該基板之方法以及具有該基板之液晶顯示器面板
US11/860,864 US8031285B2 (en) 2006-09-26 2007-09-25 Thin film transistor substrate, method of manufacturing the same, and liquid crystal display panel having the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060093519A KR101270705B1 (ko) 2006-09-26 2006-09-26 박막 트랜지스터 기판과 이의 제조 방법 및 이를 구비한액정표시패널

Publications (2)

Publication Number Publication Date
KR20080028130A KR20080028130A (ko) 2008-03-31
KR101270705B1 true KR101270705B1 (ko) 2013-06-03

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Country Status (4)

Country Link
US (1) US8031285B2 (enExample)
JP (1) JP5190593B2 (enExample)
KR (1) KR101270705B1 (enExample)
TW (1) TWI412849B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021261830A1 (en) 2020-06-23 2021-12-30 Samsung Electronics Co., Ltd. Video quality assessment method and apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101219038B1 (ko) * 2004-10-26 2013-01-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR20090049659A (ko) 2007-11-14 2009-05-19 삼성전자주식회사 표시 기판 및 이를 구비한 표시 패널
KR102668391B1 (ko) * 2008-09-19 2024-05-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101253049B1 (ko) * 2009-05-07 2013-04-11 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
US20110085121A1 (en) * 2009-10-08 2011-04-14 Hydis Technologies Co., Ltd. Fringe Field Switching Mode Liquid Crystal Display Device and Method of Fabricating the Same
KR101777839B1 (ko) 2010-07-16 2017-09-27 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
CN103364987B (zh) 2013-07-19 2015-11-25 深圳市华星光电技术有限公司 一种阵列基板及显示面板
US20150035741A1 (en) * 2013-07-30 2015-02-05 Samsung Display Co., Ltd. Display apparatus
KR102131191B1 (ko) * 2013-09-30 2020-07-08 엘지디스플레이 주식회사 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조 방법
CN203941365U (zh) * 2014-07-09 2014-11-12 京东方科技集团股份有限公司 阵列基板、显示面板及显示装置
JP6591194B2 (ja) 2015-05-15 2019-10-16 株式会社ジャパンディスプレイ 液晶表示装置
CN105093746B (zh) * 2015-08-10 2017-10-17 深圳市华星光电技术有限公司 阵列基板及液晶显示面板
US11164897B2 (en) * 2019-10-28 2021-11-02 Sharp Kabushiki Kaisha Display device
KR102799217B1 (ko) * 2020-04-20 2025-04-22 삼성디스플레이 주식회사 표시 장치

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KR20010109681A (ko) * 2000-06-01 2001-12-12 주식회사 현대 디스플레이 테크놀로지 프린지 필드 구동 액정 표시장치의 제조방법
KR20020002052A (ko) * 2000-06-29 2002-01-09 주식회사 현대 디스플레이 테크놀로지 프린지 필드 구동 모드 액정 표시 장치의 제조방법
KR20040016571A (ko) * 2002-08-19 2004-02-25 비오이 하이디스 테크놀로지 주식회사 프린지 필드 스위칭 모드 액정 디스플레이 장치

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TW594317B (en) * 2003-02-27 2004-06-21 Hannstar Display Corp Pixel structure of in-plane switching liquid crystal display device
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KR20000014701A (ko) * 1998-08-24 2000-03-15 김영환 고개구율 및 고투과율을 갖는 액정표시장치 및 그 제조방법
KR20010109681A (ko) * 2000-06-01 2001-12-12 주식회사 현대 디스플레이 테크놀로지 프린지 필드 구동 액정 표시장치의 제조방법
KR20020002052A (ko) * 2000-06-29 2002-01-09 주식회사 현대 디스플레이 테크놀로지 프린지 필드 구동 모드 액정 표시 장치의 제조방법
KR20040016571A (ko) * 2002-08-19 2004-02-25 비오이 하이디스 테크놀로지 주식회사 프린지 필드 스위칭 모드 액정 디스플레이 장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021261830A1 (en) 2020-06-23 2021-12-30 Samsung Electronics Co., Ltd. Video quality assessment method and apparatus
EP4088452A1 (en) 2020-06-23 2022-11-16 Samsung Electronics Co., Ltd. Video quality assessment method and apparatus

Also Published As

Publication number Publication date
US8031285B2 (en) 2011-10-04
TWI412849B (zh) 2013-10-21
KR20080028130A (ko) 2008-03-31
JP5190593B2 (ja) 2013-04-24
US20080074572A1 (en) 2008-03-27
JP2008083662A (ja) 2008-04-10
TW200815883A (en) 2008-04-01

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