TWI412849B - 薄膜電晶體基板，製造該基板之方法以及具有該基板之液晶顯示器面板 - Google Patents
薄膜電晶體基板，製造該基板之方法以及具有該基板之液晶顯示器面板 Download PDFInfo
- Publication number
- TWI412849B TWI412849B TW096126411A TW96126411A TWI412849B TW I412849 B TWI412849 B TW I412849B TW 096126411 A TW096126411 A TW 096126411A TW 96126411 A TW96126411 A TW 96126411A TW I412849 B TWI412849 B TW I412849B
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- gate
- substrate
- lines
- common
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 162
- 239000010409 thin film Substances 0.000 title claims abstract description 128
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 228
- 238000000034 method Methods 0.000 claims description 91
- 238000002161 passivation Methods 0.000 claims description 36
- 229910052732 germanium Inorganic materials 0.000 claims description 34
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 34
- 239000011159 matrix material Substances 0.000 claims description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 125000006850 spacer group Chemical group 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 230000003993 interaction Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 description 26
- 238000000206 photolithography Methods 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000004090 dissolution Methods 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007614 solvation Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910001449 indium ion Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060093519A KR101270705B1 (ko) | 2006-09-26 | 2006-09-26 | 박막 트랜지스터 기판과 이의 제조 방법 및 이를 구비한액정표시패널 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200815883A TW200815883A (en) | 2008-04-01 |
| TWI412849B true TWI412849B (zh) | 2013-10-21 |
Family
ID=39224531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096126411A TWI412849B (zh) | 2006-09-26 | 2007-07-19 | 薄膜電晶體基板，製造該基板之方法以及具有該基板之液晶顯示器面板 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8031285B2 (enExample) |
| JP (1) | JP5190593B2 (enExample) |
| KR (1) | KR101270705B1 (enExample) |
| TW (1) | TWI412849B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101219038B1 (ko) * | 2004-10-26 | 2013-01-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| KR20090049659A (ko) | 2007-11-14 | 2009-05-19 | 삼성전자주식회사 | 표시 기판 및 이를 구비한 표시 패널 |
| KR102668391B1 (ko) * | 2008-09-19 | 2024-05-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101253049B1 (ko) * | 2009-05-07 | 2013-04-11 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
| US20110085121A1 (en) * | 2009-10-08 | 2011-04-14 | Hydis Technologies Co., Ltd. | Fringe Field Switching Mode Liquid Crystal Display Device and Method of Fabricating the Same |
| KR101777839B1 (ko) | 2010-07-16 | 2017-09-27 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
| CN103364987B (zh) | 2013-07-19 | 2015-11-25 | 深圳市华星光电技术有限公司 | 一种阵列基板及显示面板 |
| US20150035741A1 (en) * | 2013-07-30 | 2015-02-05 | Samsung Display Co., Ltd. | Display apparatus |
| KR102131191B1 (ko) * | 2013-09-30 | 2020-07-08 | 엘지디스플레이 주식회사 | 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조 방법 |
| CN203941365U (zh) * | 2014-07-09 | 2014-11-12 | 京东方科技集团股份有限公司 | 阵列基板、显示面板及显示装置 |
| JP6591194B2 (ja) | 2015-05-15 | 2019-10-16 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
| CN105093746B (zh) * | 2015-08-10 | 2017-10-17 | 深圳市华星光电技术有限公司 | 阵列基板及液晶显示面板 |
| US11164897B2 (en) * | 2019-10-28 | 2021-11-02 | Sharp Kabushiki Kaisha | Display device |
| KR102799217B1 (ko) * | 2020-04-20 | 2025-04-22 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR102770242B1 (ko) | 2020-06-23 | 2025-02-20 | 삼성전자주식회사 | 비디오 품질 평가 방법 및 장치 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6281953B1 (en) * | 1998-08-24 | 2001-08-28 | Hyundai Electronics Industries Co., Ltd. | Liquid crystal display having high aperture ratio and high transmittance and method of manufacturing the same |
| TW541702B (en) * | 2000-06-29 | 2003-07-11 | Boe Hydis Technology Co Ltd | Method of fabricating fringe field switching mode liquid crystal display |
| TW200521582A (en) * | 2003-12-23 | 2005-07-01 | Innolux Display Corp | Liquid crystal display device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW387997B (en) * | 1997-12-29 | 2000-04-21 | Hyundai Electronics Ind | Liquid crystal display and fabrication method |
| KR100494682B1 (ko) * | 1999-06-30 | 2005-06-13 | 비오이 하이디스 테크놀로지 주식회사 | 액정표시소자 및 그 제조방법 |
| KR20010109681A (ko) * | 2000-06-01 | 2001-12-12 | 주식회사 현대 디스플레이 테크놀로지 | 프린지 필드 구동 액정 표시장치의 제조방법 |
| KR100620322B1 (ko) * | 2000-07-10 | 2006-09-13 | 엘지.필립스 엘시디 주식회사 | 횡전계 방식의 액정 표시장치 및 그 제조방법 |
| KR20040016571A (ko) * | 2002-08-19 | 2004-02-25 | 비오이 하이디스 테크놀로지 주식회사 | 프린지 필드 스위칭 모드 액정 디스플레이 장치 |
| TW594317B (en) * | 2003-02-27 | 2004-06-21 | Hannstar Display Corp | Pixel structure of in-plane switching liquid crystal display device |
| KR101217661B1 (ko) * | 2005-03-25 | 2013-01-02 | 엘지디스플레이 주식회사 | 횡전계 방식 액정표시장치용 어레이 기판과 그 제조방법 |
-
2006
- 2006-09-26 KR KR1020060093519A patent/KR101270705B1/ko active Active
-
2007
- 2007-01-22 JP JP2007011807A patent/JP5190593B2/ja active Active
- 2007-07-19 TW TW096126411A patent/TWI412849B/zh active
- 2007-09-25 US US11/860,864 patent/US8031285B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6281953B1 (en) * | 1998-08-24 | 2001-08-28 | Hyundai Electronics Industries Co., Ltd. | Liquid crystal display having high aperture ratio and high transmittance and method of manufacturing the same |
| TW541702B (en) * | 2000-06-29 | 2003-07-11 | Boe Hydis Technology Co Ltd | Method of fabricating fringe field switching mode liquid crystal display |
| TW200521582A (en) * | 2003-12-23 | 2005-07-01 | Innolux Display Corp | Liquid crystal display device |
Also Published As
| Publication number | Publication date |
|---|---|
| US8031285B2 (en) | 2011-10-04 |
| KR20080028130A (ko) | 2008-03-31 |
| JP5190593B2 (ja) | 2013-04-24 |
| US20080074572A1 (en) | 2008-03-27 |
| JP2008083662A (ja) | 2008-04-10 |
| TW200815883A (en) | 2008-04-01 |
| KR101270705B1 (ko) | 2013-06-03 |
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