JP5190593B2 - 薄膜トランジスタ基板及びこの製造方法、並びに薄膜トランジスタ基板これを備えた液晶表示パネル - Google Patents

薄膜トランジスタ基板及びこの製造方法、並びに薄膜トランジスタ基板これを備えた液晶表示パネル Download PDF

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JP5190593B2
JP5190593B2 JP2007011807A JP2007011807A JP5190593B2 JP 5190593 B2 JP5190593 B2 JP 5190593B2 JP 2007011807 A JP2007011807 A JP 2007011807A JP 2007011807 A JP2007011807 A JP 2007011807A JP 5190593 B2 JP5190593 B2 JP 5190593B2
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film transistor
thin film
electrode
transistor substrate
line
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JP2008083662A (ja
JP2008083662A5 (enExample
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奉 柱 金
春 基 柳
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2007011807A 2006-09-26 2007-01-22 薄膜トランジスタ基板及びこの製造方法、並びに薄膜トランジスタ基板これを備えた液晶表示パネル Active JP5190593B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060093519A KR101270705B1 (ko) 2006-09-26 2006-09-26 박막 트랜지스터 기판과 이의 제조 방법 및 이를 구비한액정표시패널
KR10-2006-0093519 2006-09-26

Publications (3)

Publication Number Publication Date
JP2008083662A JP2008083662A (ja) 2008-04-10
JP2008083662A5 JP2008083662A5 (enExample) 2010-03-04
JP5190593B2 true JP5190593B2 (ja) 2013-04-24

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JP2007011807A Active JP5190593B2 (ja) 2006-09-26 2007-01-22 薄膜トランジスタ基板及びこの製造方法、並びに薄膜トランジスタ基板これを備えた液晶表示パネル

Country Status (4)

Country Link
US (1) US8031285B2 (enExample)
JP (1) JP5190593B2 (enExample)
KR (1) KR101270705B1 (enExample)
TW (1) TWI412849B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101219038B1 (ko) * 2004-10-26 2013-01-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR20090049659A (ko) 2007-11-14 2009-05-19 삼성전자주식회사 표시 기판 및 이를 구비한 표시 패널
KR102668391B1 (ko) * 2008-09-19 2024-05-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101253049B1 (ko) * 2009-05-07 2013-04-11 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
US20110085121A1 (en) * 2009-10-08 2011-04-14 Hydis Technologies Co., Ltd. Fringe Field Switching Mode Liquid Crystal Display Device and Method of Fabricating the Same
KR101777839B1 (ko) 2010-07-16 2017-09-27 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
CN103364987B (zh) 2013-07-19 2015-11-25 深圳市华星光电技术有限公司 一种阵列基板及显示面板
US20150035741A1 (en) * 2013-07-30 2015-02-05 Samsung Display Co., Ltd. Display apparatus
KR102131191B1 (ko) * 2013-09-30 2020-07-08 엘지디스플레이 주식회사 프린지 필드 스위칭 모드 액정표시장치용 어레이 기판 및 이의 제조 방법
CN203941365U (zh) * 2014-07-09 2014-11-12 京东方科技集团股份有限公司 阵列基板、显示面板及显示装置
JP6591194B2 (ja) 2015-05-15 2019-10-16 株式会社ジャパンディスプレイ 液晶表示装置
CN105093746B (zh) * 2015-08-10 2017-10-17 深圳市华星光电技术有限公司 阵列基板及液晶显示面板
US11164897B2 (en) * 2019-10-28 2021-11-02 Sharp Kabushiki Kaisha Display device
KR102799217B1 (ko) * 2020-04-20 2025-04-22 삼성디스플레이 주식회사 표시 장치
KR102770242B1 (ko) 2020-06-23 2025-02-20 삼성전자주식회사 비디오 품질 평가 방법 및 장치

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TW387997B (en) * 1997-12-29 2000-04-21 Hyundai Electronics Ind Liquid crystal display and fabrication method
KR100299381B1 (ko) * 1998-08-24 2002-06-20 박종섭 고개구율 및 고투과율을 갖는 액정표시장치 및 그 제조방법
KR100494682B1 (ko) * 1999-06-30 2005-06-13 비오이 하이디스 테크놀로지 주식회사 액정표시소자 및 그 제조방법
KR20010109681A (ko) * 2000-06-01 2001-12-12 주식회사 현대 디스플레이 테크놀로지 프린지 필드 구동 액정 표시장치의 제조방법
KR20020002052A (ko) * 2000-06-29 2002-01-09 주식회사 현대 디스플레이 테크놀로지 프린지 필드 구동 모드 액정 표시 장치의 제조방법
KR100620322B1 (ko) * 2000-07-10 2006-09-13 엘지.필립스 엘시디 주식회사 횡전계 방식의 액정 표시장치 및 그 제조방법
KR20040016571A (ko) * 2002-08-19 2004-02-25 비오이 하이디스 테크놀로지 주식회사 프린지 필드 스위칭 모드 액정 디스플레이 장치
TW594317B (en) * 2003-02-27 2004-06-21 Hannstar Display Corp Pixel structure of in-plane switching liquid crystal display device
TWI282476B (en) * 2003-12-23 2007-06-11 Innolux Display Corp Liquid crystal display device
KR101217661B1 (ko) * 2005-03-25 2013-01-02 엘지디스플레이 주식회사 횡전계 방식 액정표시장치용 어레이 기판과 그 제조방법

Also Published As

Publication number Publication date
US8031285B2 (en) 2011-10-04
TWI412849B (zh) 2013-10-21
KR20080028130A (ko) 2008-03-31
US20080074572A1 (en) 2008-03-27
JP2008083662A (ja) 2008-04-10
TW200815883A (en) 2008-04-01
KR101270705B1 (ko) 2013-06-03

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