KR101227235B1 - 기판 처리 시스템의 세정 방법, 기억 매체 및 기판 처리 시스템 - Google Patents

기판 처리 시스템의 세정 방법, 기억 매체 및 기판 처리 시스템 Download PDF

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KR101227235B1
KR101227235B1 KR1020090018091A KR20090018091A KR101227235B1 KR 101227235 B1 KR101227235 B1 KR 101227235B1 KR 1020090018091 A KR1020090018091 A KR 1020090018091A KR 20090018091 A KR20090018091 A KR 20090018091A KR 101227235 B1 KR101227235 B1 KR 101227235B1
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lot
processing
predetermined
cleaning
executions
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Korean (ko)
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KR20090099461A (ko
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마사히로 누마쿠라
히로아키 모치즈키
기요히토 이이지마
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020090018091A 2008-03-17 2009-03-03 기판 처리 시스템의 세정 방법, 기억 매체 및 기판 처리 시스템 Expired - Fee Related KR101227235B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008067806A JP5220447B2 (ja) 2008-03-17 2008-03-17 基板処理システムの洗浄方法、記憶媒体及び基板処理システム
JPJP-P-2008-067806 2008-03-17

Publications (2)

Publication Number Publication Date
KR20090099461A KR20090099461A (ko) 2009-09-22
KR101227235B1 true KR101227235B1 (ko) 2013-01-28

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KR1020090018091A Expired - Fee Related KR101227235B1 (ko) 2008-03-17 2009-03-03 기판 처리 시스템의 세정 방법, 기억 매체 및 기판 처리 시스템

Country Status (5)

Country Link
US (1) US8382910B2 (https=)
JP (1) JP5220447B2 (https=)
KR (1) KR101227235B1 (https=)
CN (1) CN101540274B (https=)
TW (1) TWI464792B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101192676B1 (ko) * 2006-01-27 2012-10-19 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치
JP5947030B2 (ja) 2010-12-28 2016-07-06 キヤノンアネルバ株式会社 基板処理方法、基板処理装置
CN103215572B (zh) * 2012-01-19 2016-12-14 北京北方微电子基地设备工艺研究中心有限责任公司 半导体设备工艺控制方法和半导体设备工艺控制装置
JP5954108B2 (ja) * 2012-10-23 2016-07-20 東京エレクトロン株式会社 基板処理装置
JP2016103496A (ja) * 2014-11-27 2016-06-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6956147B2 (ja) * 2019-07-23 2021-10-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
CN111118458B (zh) * 2019-12-04 2022-03-22 北京北方华创微电子装备有限公司 腔室清洁方法及装置
US12154765B2 (en) 2020-02-03 2024-11-26 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method
CN117501423A (zh) * 2021-05-06 2024-02-02 应用材料公司 用于形成无空隙且无接缝的钨特征的处理系统及方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09298152A (ja) * 1996-05-07 1997-11-18 Nikon Corp 加工方法
JPH10199817A (ja) * 1997-01-10 1998-07-31 Kokusai Electric Co Ltd 成膜装置
KR100464579B1 (ko) * 2001-03-29 2005-01-03 가부시끼가이샤 도시바 반도체 장치 제조 방법
KR20070093878A (ko) * 2006-03-15 2007-09-19 동경 엘렉트론 주식회사 기판 처리 장치의 클리닝 방법, 기판 처리 장치,프로그램을 기록한 기록 매체

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3350264B2 (ja) * 1994-12-22 2002-11-25 松下電器産業株式会社 プラズマクリーニング方法
JPH10135094A (ja) * 1996-10-28 1998-05-22 Canon Sales Co Inc 半導体製造装置
JPH10270396A (ja) 1997-03-26 1998-10-09 Super Silicon Kenkyusho:Kk ウエハ表面洗浄方法およびウエハの総合研磨洗浄装置
US6168672B1 (en) * 1998-03-06 2001-01-02 Applied Materials Inc. Method and apparatus for automatically performing cleaning processes in a semiconductor wafer processing system
JP4017463B2 (ja) * 2002-07-11 2007-12-05 株式会社荏原製作所 洗浄方法
JP2006319041A (ja) * 2005-05-11 2006-11-24 Tokyo Electron Ltd プラズマクリーニング方法、成膜方法
JP4822048B2 (ja) * 2005-12-08 2011-11-24 富士通セミコンダクター株式会社 半導体製造装置のプリメンテナンス方法
JP4963842B2 (ja) * 2006-02-13 2012-06-27 東京エレクトロン株式会社 基板処理室の洗浄方法、記憶媒体及び基板処理装置
US20070215180A1 (en) * 2006-03-15 2007-09-20 Tokyo Electron Limited Cleaning method of substrate processing equipment, substrate processing equipment, and recording medium for recording program thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09298152A (ja) * 1996-05-07 1997-11-18 Nikon Corp 加工方法
JPH10199817A (ja) * 1997-01-10 1998-07-31 Kokusai Electric Co Ltd 成膜装置
KR100464579B1 (ko) * 2001-03-29 2005-01-03 가부시끼가이샤 도시바 반도체 장치 제조 방법
KR20070093878A (ko) * 2006-03-15 2007-09-19 동경 엘렉트론 주식회사 기판 처리 장치의 클리닝 방법, 기판 처리 장치,프로그램을 기록한 기록 매체

Also Published As

Publication number Publication date
KR20090099461A (ko) 2009-09-22
US8382910B2 (en) 2013-02-26
TW201003751A (en) 2010-01-16
CN101540274B (zh) 2012-06-13
JP2009224580A (ja) 2009-10-01
US20090229635A1 (en) 2009-09-17
CN101540274A (zh) 2009-09-23
JP5220447B2 (ja) 2013-06-26
TWI464792B (zh) 2014-12-11

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