KR101197053B1 - 유기 박막 트랜지스터 표시판 및 그 제조 방법 - Google Patents

유기 박막 트랜지스터 표시판 및 그 제조 방법 Download PDF

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Publication number
KR101197053B1
KR101197053B1 KR1020050091862A KR20050091862A KR101197053B1 KR 101197053 B1 KR101197053 B1 KR 101197053B1 KR 1020050091862 A KR1020050091862 A KR 1020050091862A KR 20050091862 A KR20050091862 A KR 20050091862A KR 101197053 B1 KR101197053 B1 KR 101197053B1
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KR
South Korea
Prior art keywords
forming
electrode
thin film
film transistor
organic
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Expired - Fee Related
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KR1020050091862A
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English (en)
Korean (ko)
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KR20070036876A (ko
Inventor
송근규
최태영
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삼성디스플레이 주식회사
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Priority to KR1020050091862A priority Critical patent/KR101197053B1/ko
Priority to TW095131904A priority patent/TWI429084B/zh
Priority to CN2006101542489A priority patent/CN1941398B/zh
Priority to JP2006262790A priority patent/JP5497976B2/ja
Priority to US11/541,254 priority patent/US7569851B2/en
Publication of KR20070036876A publication Critical patent/KR20070036876A/ko
Application granted granted Critical
Publication of KR101197053B1 publication Critical patent/KR101197053B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020050091862A 2005-09-30 2005-09-30 유기 박막 트랜지스터 표시판 및 그 제조 방법 Expired - Fee Related KR101197053B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020050091862A KR101197053B1 (ko) 2005-09-30 2005-09-30 유기 박막 트랜지스터 표시판 및 그 제조 방법
TW095131904A TWI429084B (zh) 2005-09-30 2006-08-30 製作有機薄膜電晶體陣列面板
CN2006101542489A CN1941398B (zh) 2005-09-30 2006-09-18 有机薄膜晶体管阵列面板及其制造方法
JP2006262790A JP5497976B2 (ja) 2005-09-30 2006-09-27 有機薄膜トランジスタ表示板及びその製造方法
US11/541,254 US7569851B2 (en) 2005-09-30 2006-09-29 Organic thin film transistor array panels

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050091862A KR101197053B1 (ko) 2005-09-30 2005-09-30 유기 박막 트랜지스터 표시판 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20070036876A KR20070036876A (ko) 2007-04-04
KR101197053B1 true KR101197053B1 (ko) 2012-11-06

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Family Applications (1)

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KR1020050091862A Expired - Fee Related KR101197053B1 (ko) 2005-09-30 2005-09-30 유기 박막 트랜지스터 표시판 및 그 제조 방법

Country Status (5)

Country Link
US (1) US7569851B2 (enExample)
JP (1) JP5497976B2 (enExample)
KR (1) KR101197053B1 (enExample)
CN (1) CN1941398B (enExample)
TW (1) TWI429084B (enExample)

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JP5039126B2 (ja) * 2007-03-26 2012-10-03 パイオニア株式会社 有機半導体素子及びその製造方法
EP2140510A1 (en) * 2007-04-25 2010-01-06 Merck Patent GmbH Process for preparing an electronic device
JP5256676B2 (ja) * 2007-09-21 2013-08-07 大日本印刷株式会社 有機半導体素子、有機半導体素子の製造方法、有機トランジスタアレイ、およびディスプレイ
KR20090037725A (ko) * 2007-10-12 2009-04-16 삼성전자주식회사 박막트랜지스터 기판, 그 제조 방법 및 이를 갖는 표시장치
GB0722750D0 (en) * 2007-11-20 2008-01-02 Cambridge Display Technology O Organic thin film transistors active matrix organic optical devices and emthods of making the same
CN102112913B (zh) * 2008-08-27 2013-10-09 夏普株式会社 电极接触构造、具备它的液晶显示装置及电极接触构造制造方法
JP5455010B2 (ja) * 2009-03-13 2014-03-26 富士フイルム株式会社 樹脂成形体の製造方法、インクジェットヘッド、及び電子機器
EP2256814B1 (en) 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
JP2011035037A (ja) * 2009-07-30 2011-02-17 Sony Corp 回路基板の製造方法および回路基板
KR101073562B1 (ko) * 2009-08-21 2011-10-17 삼성모바일디스플레이주식회사 패드부, 이를 포함하는 유기전계발광표시장치 및 유기전계발광표시장치의 제조방법
KR101540039B1 (ko) * 2010-04-23 2015-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
CN103367458B (zh) * 2012-04-03 2017-03-01 元太科技工业股份有限公司 薄膜晶体管及其制造方法
CN102800629B (zh) * 2012-07-23 2014-06-11 京东方科技集团股份有限公司 一种有机薄膜晶体管阵列基板制作方法
CN104576658B (zh) * 2014-12-30 2017-11-14 天马微电子股份有限公司 一种阵列基板及其制作方法及显示器
GB2567897A (en) * 2017-10-31 2019-05-01 Flexenable Ltd Source-drain conductors for organic TFTS
GB2584898B (en) * 2019-06-20 2024-05-08 Flexenable Tech Limited Semiconductor devices

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JP2000269504A (ja) 1999-03-16 2000-09-29 Hitachi Ltd 半導体装置、その製造方法及び液晶表示装置
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JP4095830B2 (ja) 2002-01-29 2008-06-04 統寶光電股▲ふん▼有限公司 有機ｌｅｄデバイスおよびその製造方法
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JP4085420B2 (ja) * 2002-07-02 2008-05-14 ソニー株式会社 電界効果半導体装置及びその製造方法
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JP4618990B2 (ja) 2002-08-02 2011-01-26 株式会社半導体エネルギー研究所 有機薄膜トランジスタ及びその作製方法、並びに有機薄膜トランジスタを有する半導体装置
JP4434563B2 (ja) * 2002-09-12 2010-03-17 パイオニア株式会社 有機ｅｌ表示装置の製造方法
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KR101090250B1 (ko) * 2004-10-15 2011-12-06 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
KR101078360B1 (ko) * 2004-11-12 2011-10-31 엘지디스플레이 주식회사 폴리형 액정 표시 패널 및 그 제조 방법

Also Published As

Publication number Publication date
KR20070036876A (ko) 2007-04-04
TWI429084B (zh) 2014-03-01
JP5497976B2 (ja) 2014-05-21
US20070158651A1 (en) 2007-07-12
JP2007103931A (ja) 2007-04-19
US7569851B2 (en) 2009-08-04
TW200715565A (en) 2007-04-16
CN1941398B (zh) 2010-12-29
CN1941398A (zh) 2007-04-04

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