KR101182263B1 - 유기 트랜지스터용 전극, 유기 트랜지스터, 및 반도체장치 - Google Patents

유기 트랜지스터용 전극, 유기 트랜지스터, 및 반도체장치 Download PDF

Info

Publication number
KR101182263B1
KR101182263B1 KR1020077027158A KR20077027158A KR101182263B1 KR 101182263 B1 KR101182263 B1 KR 101182263B1 KR 1020077027158 A KR1020077027158 A KR 1020077027158A KR 20077027158 A KR20077027158 A KR 20077027158A KR 101182263 B1 KR101182263 B1 KR 101182263B1
Authority
KR
South Korea
Prior art keywords
organic
carbon atoms
electrode
compound
drain electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020077027158A
Other languages
English (en)
Korean (ko)
Other versions
KR20080004623A (ko
Inventor
료타 이마하야시
시노부 후루카와
순페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20080004623A publication Critical patent/KR20080004623A/ko
Application granted granted Critical
Publication of KR101182263B1 publication Critical patent/KR101182263B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020077027158A 2005-04-22 2006-04-19 유기 트랜지스터용 전극, 유기 트랜지스터, 및 반도체장치 Expired - Fee Related KR101182263B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2005125811 2005-04-22
JPJP-P-2005-00125811 2005-04-22
JP2005125904 2005-04-25
JPJP-P-2005-00125904 2005-04-25
PCT/JP2006/308679 WO2006126363A1 (en) 2005-04-22 2006-04-19 Electrode for organic transistor, organic transistor, and semiconductor device

Publications (2)

Publication Number Publication Date
KR20080004623A KR20080004623A (ko) 2008-01-09
KR101182263B1 true KR101182263B1 (ko) 2012-09-17

Family

ID=37451791

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077027158A Expired - Fee Related KR101182263B1 (ko) 2005-04-22 2006-04-19 유기 트랜지스터용 전극, 유기 트랜지스터, 및 반도체장치

Country Status (4)

Country Link
US (1) US8049208B2 (enExample)
JP (1) JP5164338B2 (enExample)
KR (1) KR101182263B1 (enExample)
WO (1) WO2006126363A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101116187B (zh) * 2004-12-06 2010-05-26 株式会社半导体能源研究所 有机场效应晶体管及包含其的半导体装置
US8659008B2 (en) 2005-07-08 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Composite material and light emitting element, light emitting device, and electronic device using the composite material
DE102005048774B4 (de) * 2005-10-07 2009-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat, das zumindest bereichsweise an einer Oberfläche mit einer Beschichtung eines Metalls versehen ist, sowie dessen Verwendung
WO2007086534A1 (en) 2006-01-26 2007-08-02 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor and semiconductor device
JP5138927B2 (ja) * 2006-12-25 2013-02-06 共同印刷株式会社 フレキシブルｔｆｔ基板及びその製造方法とフレキシブルディスプレイ
KR100858088B1 (ko) 2007-02-28 2008-09-10 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법
GB2448175B (en) * 2007-04-04 2009-07-22 Cambridge Display Tech Ltd Thin film transistor
JP2009001784A (ja) * 2007-05-18 2009-01-08 Semiconductor Energy Lab Co Ltd 有機デバイス用材料および有機デバイス用材料を用いた発光素子、発光装置、電子機器、電界効果トランジスタ、半導体装置
JP2009087907A (ja) * 2007-10-03 2009-04-23 Rohm Co Ltd 有機半導体発光装置
WO2009063780A1 (ja) * 2007-11-12 2009-05-22 Mitsui Chemicals, Inc. 有機トランジスタ
KR101427707B1 (ko) * 2008-02-21 2014-08-11 삼성디스플레이 주식회사 유기 박막 트랜지스터 기판 및 그의 제조 방법
TWI574423B (zh) * 2008-11-07 2017-03-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
JP5677306B2 (ja) * 2009-09-25 2015-02-25 出光興産株式会社 有機薄膜トランジスタ
KR102174859B1 (ko) * 2010-01-22 2020-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8436403B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
WO2011105198A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014143410A (ja) 2012-12-28 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR102046864B1 (ko) 2013-03-13 2019-11-20 삼성전자주식회사 유연성 디스플레이 장치
GB2521138B (en) * 2013-12-10 2019-01-02 Flexenable Ltd Source/Drain Conductors for Transistor Devices
US11031506B2 (en) 2018-08-31 2021-06-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor using oxide semiconductor
KR102236034B1 (ko) * 2019-11-14 2021-04-05 삼성전자주식회사 유연성 디스플레이 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004047447A (ja) 2002-05-15 2004-02-12 Semiconductor Energy Lab Co Ltd 発光装置
JP2004055652A (ja) 2002-07-17 2004-02-19 Pioneer Electronic Corp 有機半導体素子
JP2005109028A (ja) 2003-09-29 2005-04-21 Tdk Corp 有機電界効果トランジスタ及びその製造方法

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US121860A (en) * 1871-12-12 Improvement in papering or putting up needles
US93283A (en) * 1869-08-03 Improved car-starter
US110812A (en) * 1871-01-03 Washmqton
US161192A (en) * 1875-03-23 Improvement in copy-slips for teaching penmanship
US139303A (en) * 1873-05-27 Improvement in grain rakers and loaders
US46096A (en) * 1865-01-31 Improvement in necktie-holders
US232203A (en) * 1880-09-14 Delivery apparatus for printing-machines
US101154A (en) * 1870-03-22 Improvement in fug-mills
US228822A (en) * 1880-06-15 Fire-escape
US180812A (en) * 1876-08-08 Improvement in neck-yokes
EP0347967A1 (en) * 1988-06-23 1989-12-27 Agfa-Gevaert N.V. Photosensitive recording material suited for use in electrophotography
JP2926845B2 (ja) 1990-03-23 1999-07-28 日本電気株式会社 有機薄膜ｅｌ素子
JPH0722670A (ja) * 1993-07-06 1995-01-24 Osaka Gas Co Ltd 電界効果型トランジスタ
JPH0790256A (ja) * 1993-09-22 1995-04-04 Pioneer Electron Corp 有機エレクトロルミネッセンス素子
JP2824411B2 (ja) 1995-08-25 1998-11-11 株式会社豊田中央研究所 有機薄膜発光素子
JP4486713B2 (ja) * 1997-01-27 2010-06-23 淳二 城戸 有機エレクトロルミネッセント素子
JPH11251067A (ja) * 1998-03-02 1999-09-17 Junji Kido 有機エレクトロルミネッセント素子
JPH11307264A (ja) 1998-04-17 1999-11-05 Matsushita Electric Ind Co Ltd 有機電界発光素子
JPH11307259A (ja) 1998-04-23 1999-11-05 Tdk Corp 有機ｅｌ素子
WO2000001203A1 (en) * 1998-06-26 2000-01-06 Idemitsu Kosan Co., Ltd. Luminescent device
TW474114B (en) * 1999-09-29 2002-01-21 Junji Kido Organic electroluminescent device, organic electroluminescent device assembly and method of controlling the emission spectrum in the device
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
US6884093B2 (en) * 2000-10-03 2005-04-26 The Trustees Of Princeton University Organic triodes with novel grid structures and method of production
TW545080B (en) 2000-12-28 2003-08-01 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP2002204012A (ja) 2000-12-28 2002-07-19 Toshiba Corp 有機トランジスタ及びその製造方法
TW518909B (en) 2001-01-17 2003-01-21 Semiconductor Energy Lab Luminescent device and method of manufacturing same
SG118110A1 (en) 2001-02-01 2006-01-27 Semiconductor Energy Lab Organic light emitting element and display device using the element
US20020139303A1 (en) 2001-02-01 2002-10-03 Shunpei Yamazaki Deposition apparatus and deposition method
DE10116876B4 (de) 2001-04-04 2004-09-23 Infineon Technologies Ag Verfahren zur Dotierung elektrisch leitfähiger organischer Verbindungen, organischer Feldeffekttransistor sowie Verfahren zu dessen Herstellung
JP4841751B2 (ja) * 2001-06-01 2011-12-21 株式会社半導体エネルギー研究所 有機半導体装置及びその作製方法
US6951666B2 (en) * 2001-10-05 2005-10-04 Cabot Corporation Precursor compositions for the deposition of electrically conductive features
DE10153562A1 (de) * 2001-10-30 2003-05-15 Infineon Technologies Ag Verfahren zur Verringerung des elektrischen Kontaktwiderstandes in organischen Feldeffekt-Transistoren durch Einbetten von Nanopartikeln zur Erzeugung von Feldüberhöhungen an der Grenzfläche zwischen dem Kontaktmaterial und dem organischen Halbleitermaterial
DE10153656A1 (de) * 2001-10-31 2003-05-22 Infineon Technologies Ag Verfahren zur Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren durch Aufbringen einer reaktiven, die organische Halbleiterschicht im Kontaktbereich regio-selektiv dotierenden Zwischenschicht
JP4269134B2 (ja) * 2001-11-06 2009-05-27 セイコーエプソン株式会社 有機半導体装置
JP2003187983A (ja) * 2001-12-17 2003-07-04 Ricoh Co Ltd 有機ｅｌトランジスタ
JP2003298056A (ja) 2002-03-28 2003-10-17 National Institute Of Advanced Industrial & Technology 有機薄膜電界効果トランジスターおよびその製造方法
US6951694B2 (en) * 2002-03-29 2005-10-04 The University Of Southern California Organic light emitting devices with electron blocking layers
EP1367659B1 (en) * 2002-05-21 2012-09-05 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor
EP1383179A2 (en) * 2002-07-17 2004-01-21 Pioneer Corporation Organic semiconductor device
JP2004103905A (ja) * 2002-09-11 2004-04-02 Pioneer Electronic Corp 有機半導体素子
US7158161B2 (en) * 2002-09-20 2007-01-02 Matsushita Electric Industrial Co., Ltd. Organic electroluminescence element and an exposure unit and image-forming apparatus both using the element
US7094902B2 (en) * 2002-09-25 2006-08-22 3M Innovative Properties Company Electroactive polymers
WO2004055897A2 (en) 2002-12-18 2004-07-01 Matsushita Electric Industrial Co., Ltd. Exposing apparatus and image forming apparatus using organic electroluminescence element
JP2004228371A (ja) 2003-01-23 2004-08-12 Mitsubishi Chemicals Corp 電界効果トランジスタ
US6828583B2 (en) * 2003-03-12 2004-12-07 The Regents Of The University Of California Injection lasers fabricated from semiconducting polymers
JP2005026121A (ja) 2003-07-03 2005-01-27 Fujitsu Ltd 有機ｅｌ素子及びその製造方法並びに有機ｅｌディスプレイ
WO2005006817A1 (ja) * 2003-07-10 2005-01-20 Ideal Star Inc. 発光素子、及び発光装置
JP4570341B2 (ja) * 2003-07-23 2010-10-27 シャープ株式会社 薄膜トランジスタおよびそれを用いた表示素子、ならびに液晶表示素子
JP4997688B2 (ja) * 2003-08-19 2012-08-08 セイコーエプソン株式会社 電極、薄膜トランジスタ、電子回路、表示装置および電子機器
KR101286219B1 (ko) 2003-09-26 2013-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광소자의 제조방법
EP2276088B1 (en) * 2003-10-03 2018-02-14 Semiconductor Energy Laboratory Co, Ltd. Light emitting element, and light emitting device using the light emitting element
JP4476594B2 (ja) * 2003-10-17 2010-06-09 淳二 城戸 有機エレクトロルミネッセント素子
JP4243237B2 (ja) 2003-11-10 2009-03-25 淳二 城戸 有機素子、有機ｅｌ素子、有機太陽電池、及び、有機ｆｅｔ構造、並びに、有機素子の製造方法
US7605534B2 (en) * 2003-12-02 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element having metal oxide and light-emitting device using the same
EP1695396B1 (en) * 2003-12-16 2009-06-03 Panasonic Corporation Organic electroluminescent device and method for manufacturing the same
KR100669716B1 (ko) * 2004-07-14 2007-01-16 삼성에스디아이 주식회사 페닐카르바졸 화합물 및 이를 이용한 유기 전계 발광 소자
JP4925569B2 (ja) * 2004-07-08 2012-04-25 ローム株式会社 有機エレクトロルミネッセント素子
EP1624502B1 (en) * 2004-08-04 2015-11-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, display device, and electronic appliance
US7208756B2 (en) * 2004-08-10 2007-04-24 Ishiang Shih Organic semiconductor devices having low contact resistance
US7755278B2 (en) 2004-08-25 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting element provided with organic conductive and inorganic hole transport layers between an electrode and organic emissive layer
US7683532B2 (en) 2004-11-02 2010-03-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and light emitting device
US7714501B2 (en) 2004-12-01 2010-05-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device and electronic equipment
US7667389B2 (en) 2004-12-06 2010-02-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
JP2006164708A (ja) * 2004-12-06 2006-06-22 Semiconductor Energy Lab Co Ltd 電子機器および発光装置
US7545840B2 (en) * 2004-12-06 2009-06-09 Semiconductor Energy Laboratory Co., Ltd. Laser element and method for manufacturing the same
CN101116187B (zh) * 2004-12-06 2010-05-26 株式会社半导体能源研究所 有机场效应晶体管及包含其的半导体装置
US7989694B2 (en) 2004-12-06 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element, solar battery, and photo sensor
US9530968B2 (en) 2005-02-15 2016-12-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device
US7626198B2 (en) * 2005-03-22 2009-12-01 Semiconductor Energy Laboratory Co., Ltd. Nonlinear element, element substrate including the nonlinear element, and display device
US7649197B2 (en) 2005-03-23 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Composite material, and light emitting element and light emitting device using the composite material
JP5089063B2 (ja) 2005-03-23 2012-12-05 株式会社半導体エネルギー研究所 複合材料および複合材料を用いた発光素子並びに発光装置
US7851989B2 (en) 2005-03-25 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7777232B2 (en) 2005-04-11 2010-08-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device using the same
US7560735B2 (en) * 2005-04-22 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, organic transistor, light-emitting device, and electronic device
US20060270066A1 (en) * 2005-04-25 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Organic transistor, manufacturing method of semiconductor device and organic transistor
JP2006332614A (ja) 2005-04-25 2006-12-07 Semiconductor Energy Lab Co Ltd 半導体装置、有機トランジスタ及びその作製方法
US20060273303A1 (en) * 2005-06-07 2006-12-07 Xerox Corporation. Organic thin film transistors with multilayer electrodes
US8659008B2 (en) * 2005-07-08 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Composite material and light emitting element, light emitting device, and electronic device using the composite material
WO2007015407A1 (en) * 2005-08-04 2007-02-08 Semiconductor Energy Laboratory Co., Ltd. Carbazole derivative, light-emitting element material obtained by using carbazole derivative, light-emitting element, and electronic device
WO2007086534A1 (en) 2006-01-26 2007-08-02 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor and semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004047447A (ja) 2002-05-15 2004-02-12 Semiconductor Energy Lab Co Ltd 発光装置
JP2004055652A (ja) 2002-07-17 2004-02-19 Pioneer Electronic Corp 有機半導体素子
JP2005109028A (ja) 2003-09-29 2005-04-21 Tdk Corp 有機電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
JP5164338B2 (ja) 2013-03-21
KR20080004623A (ko) 2008-01-09
JP2006332613A (ja) 2006-12-07
WO2006126363A1 (en) 2006-11-30
US20090134383A1 (en) 2009-05-28
US8049208B2 (en) 2011-11-01

Similar Documents

Publication Publication Date Title
KR101182263B1 (ko) 유기 트랜지스터용 전극, 유기 트랜지스터, 및 반도체장치
US8785259B2 (en) Organic transistor, manufacturing method of semiconductor device and organic transistor
US8592821B2 (en) Semiconductor element, organic transistor, light-emitting device, and electronic device
CN101116187B (zh) 有机场效应晶体管及包含其的半导体装置
CN1855570B (zh) 半导体装置以及其制造方法
CN1828963B (zh) 薄膜晶体管、其制备方法以及使用该晶体管的平板显示器
JPWO2009044614A1 (ja) 有機半導体装置
CN101901870B (zh) 半导体器件及其制造方法
JP5121162B2 (ja) 半導体素子、発光装置及び電気機器
KR100708721B1 (ko) 박막 트랜지스터 및 이를 구비한 평판 표시 장치
JP2006332614A (ja) 半導体装置、有機トランジスタ及びその作製方法
JP5025948B2 (ja) 有機電界効果トランジスタ及び半導体装置
KR100719566B1 (ko) 유기 박막 트랜지스터, 및 이를 구비한 평판 표시 장치
JP2009087907A (ja) 有機半導体発光装置
JP5025151B2 (ja) 蒸着物の作製方法
JP2006324649A (ja) 有機半導体装置の作製方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20150819

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20160804

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20170818

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180907

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180907

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000