WO2009063780A1 - 有機トランジスタ - Google Patents

有機トランジスタ Download PDF

Info

Publication number
WO2009063780A1
WO2009063780A1 PCT/JP2008/070129 JP2008070129W WO2009063780A1 WO 2009063780 A1 WO2009063780 A1 WO 2009063780A1 JP 2008070129 W JP2008070129 W JP 2008070129W WO 2009063780 A1 WO2009063780 A1 WO 2009063780A1
Authority
WO
WIPO (PCT)
Prior art keywords
substituted
unsubstituted
ring
organic transistor
group
Prior art date
Application number
PCT/JP2008/070129
Other languages
English (en)
French (fr)
Inventor
Masakatsu Nakatsuka
Takahiro Fujiyama
Yoshiyuki Totani
Taizo Nishimoto
Original Assignee
Mitsui Chemicals, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals, Inc. filed Critical Mitsui Chemicals, Inc.
Priority to JP2009541104A priority Critical patent/JP5498795B2/ja
Publication of WO2009063780A1 publication Critical patent/WO2009063780A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D491/00—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00
    • C07D491/12—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00 in which the condensed system contains three hetero rings
    • C07D491/14—Ortho-condensed systems
    • C07D491/153—Ortho-condensed systems the condensed system containing two rings with oxygen as ring hetero atom and one ring with nitrogen as ring hetero atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/22—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)

Abstract

　有機半導体層を有する有機トランジスタにおいて、該有機半導体層に一般式（１）で表される化合物を少なくとも１種含有してなる有機トランジスタは、高い移動度、大きな電流オン／オフ比を有し、保存安定性に優れた有機トランジスタとなる。 （式中、環Ａおよび環Ｂはそれぞれ独立に、置換または未置換のベンゼン環、置換または未置換のナフタレン環、置換または未置換のチオフェン環、あるいは置換または未置換のベンゾ［ｂ］チオフェン環を表し、Ｘ１およびＸ２はそれぞれ独立に、酸素原子あるいは硫黄原子を表し、Ｒは水素原子、直鎖、分岐または環状のアルキル基、直鎖、分岐または環状のアルコキシアルキル基、置換または未置換のフェニル基、あるいは置換または未置換のチエニル基を表す）
PCT/JP2008/070129 2007-11-12 2008-11-05 有機トランジスタ WO2009063780A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009541104A JP5498795B2 (ja) 2007-11-12 2008-11-05 有機トランジスタ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-293156 2007-11-12
JP2007293156 2007-11-12

Publications (1)

Publication Number Publication Date
WO2009063780A1 true WO2009063780A1 (ja) 2009-05-22

Family

ID=40638632

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070129 WO2009063780A1 (ja) 2007-11-12 2008-11-05 有機トランジスタ

Country Status (3)

Country Link
JP (1) JP5498795B2 (ja)
TW (1) TW200945644A (ja)
WO (1) WO2009063780A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010027106A1 (ja) * 2008-09-08 2010-03-11 住友化学株式会社 新規化合物及び有機半導体材料
CN102191036A (zh) * 2010-03-09 2011-09-21 海洋王照明科技股份有限公司 含氮噻吩有机光电材料、其制造方法和应用
JP2012036180A (ja) * 2010-07-13 2012-02-23 Sumitomo Chemical Co Ltd 縮合環化合物の製造方法、および該方法に用いられる原料化合物
WO2012176820A1 (ja) * 2011-06-22 2012-12-27 国立大学法人 岡山大学 縮合複素環化合物およびその重合体
ITMI20111197A1 (it) * 2011-06-29 2012-12-30 Eni Spa "polimero coniugato fotoattivo comprendente unita' dibenzotienilpirroliche"
JP2013535476A (ja) * 2010-08-05 2013-09-12 メルク パテント ゲーエムベーハー 電子デバイス用の材料
EP2903047A1 (en) * 2014-01-31 2015-08-05 Ecole Polytechnique Fédérale de Lausanne (EPFL) Hole transporting and light absorbing material for solid state solar cells
CN109206437A (zh) * 2018-09-03 2019-01-15 天津理工大学 以四噻吩并吡咯为核的有机空穴传输材料及其制备和应用
KR20200127607A (ko) * 2019-05-03 2020-11-11 덕산네오룩스 주식회사 유기전기 소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치
WO2021132981A1 (ko) * 2019-12-27 2021-07-01 엘티소재주식회사 헤테로고리 화합물, 이를 포함하는 유기 발광 소자 및 유기 발광 소자의 유기물층용 조성물

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102104046B1 (ko) * 2017-11-03 2020-04-23 국민대학교산학협력단 페로브스카이트 태양전지용 정공수송재료 및 이의 제조방법, 그리고 이를 포함하는 페로브스카이트 태양전지

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470300A (en) * 1977-09-30 1979-06-05 Warner Lambert Co Novel substituted indolopyrones
JPH0327383A (ja) * 1989-06-03 1991-02-05 Bayer Ag 複素環式化合物
JPH0641472B2 (ja) * 1984-10-10 1994-06-01 メレルダウフア−マス−テイカルズ インコ−ポレ−テツド チエノトリアジン類
JP2004146733A (ja) * 2002-10-28 2004-05-20 Konica Minolta Holdings Inc 有機半導体及びそれを用いる有機薄膜トランジスタ素子
JP2006332613A (ja) * 2005-04-22 2006-12-07 Semiconductor Energy Lab Co Ltd 有機トランジスタ用電極、有機トランジスタ、及び半導体装置、

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6193912B1 (en) * 1998-03-03 2001-02-27 Gentex Corporation Near infrared-absorbing electrochromic compounds and devices comprising same
JP2007088016A (ja) * 2005-09-20 2007-04-05 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機半導体デバイス、有機薄膜トランジスタ及び有機エレクトロルミネッセンス素子
JP2009033068A (ja) * 2007-07-31 2009-02-12 Mitsui Chemicals Inc 有機トランジスタ
JP2010043038A (ja) * 2008-08-18 2010-02-25 Sumitomo Chemical Co Ltd ラダー型化合物及び有機半導体材料

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470300A (en) * 1977-09-30 1979-06-05 Warner Lambert Co Novel substituted indolopyrones
JPH0641472B2 (ja) * 1984-10-10 1994-06-01 メレルダウフア−マス−テイカルズ インコ−ポレ−テツド チエノトリアジン類
JPH0327383A (ja) * 1989-06-03 1991-02-05 Bayer Ag 複素環式化合物
JP2004146733A (ja) * 2002-10-28 2004-05-20 Konica Minolta Holdings Inc 有機半導体及びそれを用いる有機薄膜トランジスタ素子
JP2006332613A (ja) * 2005-04-22 2006-12-07 Semiconductor Energy Lab Co Ltd 有機トランジスタ用電極、有機トランジスタ、及び半導体装置、

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102209720A (zh) * 2008-09-08 2011-10-05 住友化学株式会社 新型化合物及有机半导体材料
WO2010027106A1 (ja) * 2008-09-08 2010-03-11 住友化学株式会社 新規化合物及び有機半導体材料
CN102191036A (zh) * 2010-03-09 2011-09-21 海洋王照明科技股份有限公司 含氮噻吩有机光电材料、其制造方法和应用
JP2012036180A (ja) * 2010-07-13 2012-02-23 Sumitomo Chemical Co Ltd 縮合環化合物の製造方法、および該方法に用いられる原料化合物
US9893297B2 (en) 2010-08-05 2018-02-13 Merck Patent Gmbh Materials for electronic devices
JP2013535476A (ja) * 2010-08-05 2013-09-12 メルク パテント ゲーエムベーハー 電子デバイス用の材料
US10749117B2 (en) 2010-08-05 2020-08-18 Merck Patent Gmbh Materials for electronic devices
WO2012176820A1 (ja) * 2011-06-22 2012-12-27 国立大学法人 岡山大学 縮合複素環化合物およびその重合体
JPWO2012176820A1 (ja) * 2011-06-22 2015-02-23 国立大学法人 岡山大学 縮合複素環化合物およびその重合体
ITMI20111197A1 (it) * 2011-06-29 2012-12-30 Eni Spa "polimero coniugato fotoattivo comprendente unita' dibenzotienilpirroliche"
WO2013001519A1 (en) * 2011-06-29 2013-01-03 Eni S.P.A. Photoactive conjugated polymer comprising dibenzothienylpyrrole units
WO2015114521A1 (en) * 2014-01-31 2015-08-06 Ecole Polytechnique Federale De Lausanne (Epfl) Hole transporting and light absorbing material for solid state solar cells
CN106062984A (zh) * 2014-01-31 2016-10-26 洛桑联邦理工学院 用于固态太阳能电池的空穴传输和光吸收材料
EP2903047A1 (en) * 2014-01-31 2015-08-05 Ecole Polytechnique Fédérale de Lausanne (EPFL) Hole transporting and light absorbing material for solid state solar cells
CN109206437A (zh) * 2018-09-03 2019-01-15 天津理工大学 以四噻吩并吡咯为核的有机空穴传输材料及其制备和应用
CN109206437B (zh) * 2018-09-03 2021-04-06 天津理工大学 以四噻吩并吡咯为核的有机空穴传输材料及其制备和应用
KR20200127607A (ko) * 2019-05-03 2020-11-11 덕산네오룩스 주식회사 유기전기 소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치
WO2020226295A1 (ko) * 2019-05-03 2020-11-12 덕산네오룩스 주식회사 유기전기 소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치
KR102649286B1 (ko) 2019-05-03 2024-03-19 덕산네오룩스 주식회사 유기전기 소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치
WO2021132981A1 (ko) * 2019-12-27 2021-07-01 엘티소재주식회사 헤테로고리 화합물, 이를 포함하는 유기 발광 소자 및 유기 발광 소자의 유기물층용 조성물
KR20210084734A (ko) * 2019-12-27 2021-07-08 엘티소재주식회사 헤테로고리 화합물, 이를 포함하는 유기 발광 소자 및 유기 발광 소자의 유기물층용 조성물
KR102399701B1 (ko) 2019-12-27 2022-05-23 엘티소재주식회사 헤테로고리 화합물, 이를 포함하는 유기 발광 소자 및 유기 발광 소자의 유기물층용 조성물

Also Published As

Publication number Publication date
TW200945644A (en) 2009-11-01
JP5498795B2 (ja) 2014-05-21
JPWO2009063780A1 (ja) 2011-03-31

Similar Documents

Publication Publication Date Title
WO2009063780A1 (ja) 有機トランジスタ
ATE489834T1 (de) Organische elektrolumineszenzvorrichtung
WO2005070992A3 (en) Conjugated thiophene compound, conprising perfluorinated and alkylated sidechains, conductive organic thin film containing the compound, and field-effect type organic transistor employing the thin film
TW200736363A (en) Material for organic electroluminescent device and organic electroluminescent device
WO2009008311A1 (ja) クリセン誘導体及びそれを用いた有機エレクトロルミネッセンス素子
ATE469160T1 (de) Platinkomplexverbindungen und organische elektrolumineszenzvorrichtung dafür
EP2468731A4 (en) CYCLIC AZINE DERIVATIVES, METHOD OF MANUFACTURING THEREOF AND THESE ELECTROLUMINESCENCE ELEMENT COMPRISING THE COMPONENT
WO2009011327A1 (ja) 有機エレクトロルミネッセンス素子用材料及び有機エレクトロルミネッセンス素子
ATE486879T1 (de) Organische elektrolumineszenzvorrichtung
WO2009066666A1 (ja) 高分子化合物及びそれを用いた有機エレクトロルミネッセンス素子
WO2008146665A1 (ja) 有機エレクトロルミネッセンス素子用材料及び有機エレクトロルミネッセンス素子並びに有機エレクトロルミネッセンス表示装置
ATE515808T1 (de) Organische elektronische vorrichtungen mit phthalimid-verbindungen
TW200606209A (en) Polythiophene formulations for improving organic light-emitting diodes
ATE391144T1 (de) Organopolysiloxan und dieses enthaltende härtbare silikonzusammensetzung
WO2009069602A1 (ja) ベンズアントラセン化合物及びそれを用いた有機エレクトロルミネッセンス素子
WO2010136401A3 (en) Polycyclic dithiophenes
WO2008105294A1 (ja) 有機ｅｌ素子
TW200604194A (en) Compound having pyridyl group-substituted oxadiazole ring structure, and organic electroluminescence device
TW200604749A (en) Top coat composition
WO2008093821A1 (ja) 高分子発光素子、高分子化合物、組成物、液状組成物及び導電性薄膜
WO2008111461A1 (ja) 含フッ素多環芳香族化合物、含フッ素重合体、有機薄膜及び有機薄膜素子
WO2009057978A3 (en) Material for organic photoelectric device, and organic photoelectric device thereby
WO2008126804A1 (ja) レジスト下層膜形成組成物
EP2679589A4 (en) COMPOUNDS WITH AN INDENCARBAZOL RING STRUCTURE AND AN ORGANIC ELECTROLUMINESCENCE ELEMENT
ATE519828T1 (de) Organische elektrolumineszenzvorrichtung

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08850280

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009541104

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08850280

Country of ref document: EP

Kind code of ref document: A1