KR101144458B1 - 마이크로 인쇄술용 조명 시스템 - Google Patents

마이크로 인쇄술용 조명 시스템 Download PDF

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Publication number
KR101144458B1
KR101144458B1 KR1020057025338A KR20057025338A KR101144458B1 KR 101144458 B1 KR101144458 B1 KR 101144458B1 KR 1020057025338 A KR1020057025338 A KR 1020057025338A KR 20057025338 A KR20057025338 A KR 20057025338A KR 101144458 B1 KR101144458 B1 KR 101144458B1
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KR
South Korea
Prior art keywords
field
light
honeycomb
illumination
pupil
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Expired - Fee Related
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KR1020057025338A
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English (en)
Korean (ko)
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KR20060039876A (ko
Inventor
울프강 시그너
조아킴 비트졸렉
조아킴 하안쯔
가브리에르 비라우크
만프레드 마울
Original Assignee
칼 짜이스 에스엠티 게엠베하
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Publication of KR20060039876A publication Critical patent/KR20060039876A/ko
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Publication of KR101144458B1 publication Critical patent/KR101144458B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lighting Device Outwards From Vehicle And Optical Signal (AREA)
KR1020057025338A 2003-07-30 2004-04-13 마이크로 인쇄술용 조명 시스템 Expired - Fee Related KR101144458B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10334722 2003-07-30
DE10334722.4 2003-07-30
PCT/EP2004/003854 WO2005015314A2 (en) 2003-07-30 2004-04-13 An illumination system for microlithography

Publications (2)

Publication Number Publication Date
KR20060039876A KR20060039876A (ko) 2006-05-09
KR101144458B1 true KR101144458B1 (ko) 2012-05-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057025338A Expired - Fee Related KR101144458B1 (ko) 2003-07-30 2004-04-13 마이크로 인쇄술용 조명 시스템

Country Status (7)

Country Link
US (1) US7911584B2 (https=)
EP (1) EP1649324B1 (https=)
JP (1) JP5026788B2 (https=)
KR (1) KR101144458B1 (https=)
AT (1) ATE502323T1 (https=)
DE (1) DE602004031844D1 (https=)
WO (1) WO2005015314A2 (https=)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005036266A1 (de) 2003-09-17 2005-04-21 Carl Zeiss Smt Ag Masken, lithographievorrichtung und halbleiterbauelement
DE102005042005A1 (de) 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Hochaperturiges Objektiv mit obskurierter Pupille
WO2006136353A1 (en) * 2005-06-21 2006-12-28 Carl Zeiss Smt Ag A double-facetted illumination system with attenuator elements on the pupil facet mirror
JP2007150295A (ja) 2005-11-10 2007-06-14 Carl Zeiss Smt Ag ラスタ要素を有する光学装置、及びこの光学装置を有する照射システム
KR101314974B1 (ko) 2006-02-17 2013-10-04 칼 짜이스 에스엠티 게엠베하 마이크로리소그래픽 조명 시스템 및 이를 구비한 투사 노출장치
DE102006020734A1 (de) 2006-05-04 2007-11-15 Carl Zeiss Smt Ag Beleuchtungssystem für die EUV-Lithographie sowie erstes und zweites optisches Element zum Einsatz in einem derartigen Beleuchtungssystem
DE102006059024A1 (de) 2006-12-14 2008-06-19 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
DE102007023411A1 (de) 2006-12-28 2008-07-03 Carl Zeiss Smt Ag Optisches Element, Beleuchtungsoptik für die Mikrolithographie mit mindestens einem derartigen optischen Element sowie Beleuchtungssystem mit einer derartigen Beleuchtungsoptik
WO2008101664A1 (en) * 2007-02-20 2008-08-28 Carl Zeiss Smt Ag Optical element with multiple primary light sources
US7843549B2 (en) * 2007-05-23 2010-11-30 Asml Holding N.V. Light attenuating filter for correcting field dependent ellipticity and uniformity
EP2155932A2 (de) * 2007-05-31 2010-02-24 Carl Zeiss SMT AG Verfahren zur herstellung eines optischen elementes mit hilfe von abformung, optisches element hergestellt nach diesem verfahren, kollektor und beleuchtungssystem
DE102007041004A1 (de) 2007-08-29 2009-03-05 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Mikrolithografie
US8908151B2 (en) * 2008-02-14 2014-12-09 Nikon Corporation Illumination optical system, exposure apparatus, device manufacturing method, compensation filter, and exposure optical system
DE102008001511A1 (de) * 2008-04-30 2009-11-05 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
DE102008002749A1 (de) 2008-06-27 2009-12-31 Carl Zeiss Smt Ag Beleuchtungsoptik für die Mikrolithografie
NL2003449A (en) * 2008-10-28 2010-04-29 Asml Netherlands Bv Fly's eye integrator, illuminator, lithographic apparatus and method.
JP6041304B2 (ja) * 2009-03-27 2016-12-07 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖマイクロリソグラフィ用の照明光学系、この種の照明光学系用のｅｕｖ減衰器、及びこの種の照明光学系を有する照明系及び投影露光装置
DE102009014701A1 (de) 2009-03-27 2010-09-30 Carl Zeiss Smt Ag Optische Baugruppe
JP5070242B2 (ja) * 2009-05-27 2012-11-07 カール・ツァイス・エスエムティー・ゲーエムベーハー リソグラフィ装置
DE102009045491A1 (de) 2009-10-08 2010-11-25 Carl Zeiss Smt Ag Beleuchtungsoptik
JP5661172B2 (ja) * 2010-04-23 2015-01-28 カール・ツァイス・エスエムティー・ゲーエムベーハー リソグラフィ系の光学要素の操作を含むリソグラフィ系を作動させる方法
WO2012041697A1 (en) 2010-09-27 2012-04-05 Carl Zeiss Smt Gmbh Mirror, projection objective comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective
DE102011085132A1 (de) 2010-11-24 2012-05-24 Carl Zeiss Smt Gmbh Optische Baugruppe für die Projektionslithografie
DE102010062720B4 (de) 2010-12-09 2012-07-12 Carl Zeiss Smt Gmbh EUV-Lithographiesystem
NL2008009A (en) 2011-02-02 2012-08-06 Asml Netherlands Bv Illumination system, lithographic apparatus and method.
DE102011004326A1 (de) 2011-02-17 2012-08-23 Carl Zeiss Smt Gmbh Optische Baugruppe für eine Beleuchtungsoptik für die Projektionslithographie
JP2013072845A (ja) * 2011-09-29 2013-04-22 Nuflare Technology Inc パターン検査装置及びパターン検査方法
CN104220931B (zh) 2012-03-29 2016-10-12 卡尔蔡司Smt有限责任公司 补偿微光刻投射曝光系统的通道缺陷的设备及方法
DE102012210174A1 (de) * 2012-06-18 2013-06-06 Carl Zeiss Smt Gmbh Optisches Bauelement
DE102012218221A1 (de) * 2012-10-05 2014-04-10 Carl Zeiss Smt Gmbh Monitorsystem zum Bestimmen von Orientierungen von Spiegelelementen und EUV-Lithographiesystem
DE102014203187A1 (de) 2014-02-21 2015-08-27 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithografie
DE102014217612A1 (de) 2014-09-03 2016-03-03 Carl Zeiss Smt Gmbh Beleuchtungoptik für die Projektonslithograpfie
US11175487B2 (en) * 2017-06-19 2021-11-16 Suss Microtec Photonic Systems Inc. Optical distortion reduction in projection systems
JP2019028392A (ja) * 2017-08-03 2019-02-21 セイコーエプソン株式会社 光源装置、照明装置及びプロジェクター
DE102021120952B3 (de) * 2021-08-11 2022-11-10 Carl Zeiss Smt Gmbh Verfahren zur Korrektur eines Telezentriefehlers einer Abbildungsvorrichtung und Maskeninspektionsmikroskop

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030017431A (ko) * 2001-08-23 2003-03-03 가부시키가이샤 니콘 조명 광학 장치, 노광 장치, 노광 방법 및 마이크로장치의 제조 방법

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE561573C (de) 1928-04-05 1932-10-15 Aeg Beleuchtungseinrichtung fuer Bildwerfer
US1880414A (en) 1930-01-03 1932-10-04 Eastman Kodak Co Illuminating system for photographic apparatus
US2186123A (en) 1937-01-27 1940-01-09 Zeiss Ikon Ag Illuminating system
US2183249A (en) 1937-11-06 1939-12-12 Zeiss Ikon Ag Illuminating device for projectors
US3541323A (en) 1968-05-16 1970-11-17 Eg & G Inc Laser beam projector
US3988066A (en) 1974-01-12 1976-10-26 Canon Kabushiki Kaisha Light exposure apparatus for printing
US3941475A (en) 1974-07-01 1976-03-02 Tamarack Scientific Co., Inc. Optical microcircuit printing system
US4109304A (en) 1976-02-23 1978-08-22 Khvalovsky Vladimir Vasilievic Device for coherent lighting of objects
US4155630A (en) 1977-11-17 1979-05-22 University Of Delaware Speckle elimination by random spatial phase modulation
DE2803277A1 (de) 1978-01-26 1979-08-02 Bosch Gmbh Robert Vorrichtung zur belichtung einer auf eine oberflaeche eines substrats aufgebrachten fotolackschicht
US4241389A (en) 1979-04-25 1980-12-23 Kasper Instruments, Inc. Multiple apparent source optical imaging system
US4444456A (en) 1982-06-23 1984-04-24 International Business Machines Corporation Holographic method and apparatus for transformation of a light beam into a line source of required curvature and finite numerical aperture
JPS597359A (ja) 1982-07-02 1984-01-14 Canon Inc 照明装置
US4521087A (en) 1983-05-23 1985-06-04 International Business Machines Corporation Optical system with diffuser for transformation of a collimated beam into a self-luminous arc with required curvature and numerical aperture
JPS60218635A (ja) 1984-04-13 1985-11-01 Canon Inc 照明装置
US4936665A (en) 1987-10-25 1990-06-26 Whitney Theodore R High resolution imagery systems and methods
US4918583A (en) 1988-04-25 1990-04-17 Nikon Corporation Illuminating optical device
NL8901077A (nl) 1989-04-28 1990-11-16 Koninkl Philips Electronics Nv Optische belichtingsstelsel en projectie-apparaat voorzien van een dergelijk stelsel.
JP3360686B2 (ja) 1990-12-27 2002-12-24 株式会社ニコン 照明光学装置および投影露光装置並びに露光方法および素子製造方法
US5335044A (en) 1992-02-26 1994-08-02 Nikon Corporation Projection type exposure apparatus and method of exposure
US5333166A (en) 1992-08-28 1994-07-26 Intel Corporation Self-apodizing collimator for x-ray lithography
US5677939A (en) 1994-02-23 1997-10-14 Nikon Corporation Illuminating apparatus
JP3633002B2 (ja) 1994-05-09 2005-03-30 株式会社ニコン 照明光学装置、露光装置及び露光方法
KR100377206B1 (ko) * 1994-08-26 2003-06-09 소니 가부시끼 가이샤 패턴형성방법및이방법을이용한반도체디바이스제조방법
JP3458549B2 (ja) 1994-08-26 2003-10-20 ソニー株式会社 パターン形成方法および該方法を用いた半導体デバイス製造方法と装置
JP3521506B2 (ja) 1994-11-24 2004-04-19 株式会社ニコン 照明装置及び露光装置
JP3608580B2 (ja) 1995-03-22 2005-01-12 株式会社ニコン 照明光学装置、露光装置、露光方法、及びフライアイレンズ
JP4310816B2 (ja) 1997-03-14 2009-08-12 株式会社ニコン 照明装置、投影露光装置、デバイスの製造方法、及び投影露光装置の調整方法
KR100521704B1 (ko) * 1997-09-19 2005-10-14 가부시키가이샤 니콘 스테이지장치, 주사형 노광장치 및 방법, 그리고 이것으로제조된 디바이스
JP3101613B2 (ja) 1998-01-30 2000-10-23 キヤノン株式会社 照明光学装置及び投影露光装置
JP4238390B2 (ja) 1998-02-27 2009-03-18 株式会社ニコン 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法
JP3817365B2 (ja) 1998-04-30 2006-09-06 キヤノン株式会社 投影露光装置及びそれを用いたデバイスの製造方法
US6438199B1 (en) * 1998-05-05 2002-08-20 Carl-Zeiss-Stiftung Illumination system particularly for microlithography
EP0955641B1 (de) * 1998-05-05 2004-04-28 Carl Zeiss Beleuchtungssystem insbesondere für die EUV-Lithographie
DE10100265A1 (de) * 2001-01-08 2002-07-11 Zeiss Carl Beleuchtungssystem mit Rasterelementen unterschiedlicher Größe
DE10053587A1 (de) 2000-10-27 2002-05-02 Zeiss Carl Beleuchtungssystem mit variabler Einstellung der Ausleuchtung
DE10138313A1 (de) 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
JP2000162415A (ja) 1998-09-22 2000-06-16 Nikon Corp 反射鏡の製造方法又は反射型照明装置又は半導体露光装置
JP2000162414A (ja) 1998-09-22 2000-06-16 Nikon Corp 反射鏡の製造方法又は反射型照明装置又は半導体露光装置
US6573978B1 (en) 1999-01-26 2003-06-03 Mcguire, Jr. James P. EUV condenser with non-imaging optics
US6195201B1 (en) 1999-01-27 2001-02-27 Svg Lithography Systems, Inc. Reflective fly's eye condenser for EUV lithography
JP2000269114A (ja) 1999-03-16 2000-09-29 Nikon Corp 照明装置、露光装置及び露光方法
US6281967B1 (en) 2000-03-15 2001-08-28 Nikon Corporation Illumination apparatus, exposure apparatus and exposure method
WO2000057459A1 (en) 1999-03-24 2000-09-28 Nikon Corporation Exposure method and apparatus
US20040032576A1 (en) * 1999-03-26 2004-02-19 Nikon Corporation Exposure method and apparatus
DE19935568A1 (de) 1999-07-30 2001-02-15 Zeiss Carl Fa Steuerung der Beleuchtungsverteilung in der Austrittspupille eines EUV-Beleuchtungssystems
JP2003506881A (ja) 1999-07-30 2003-02-18 カール ツァイス シュティフトゥング トレイディング アズ カール ツァイス Ｅｕｖ照明光学系の射出瞳における照明分布の制御
KR100662756B1 (ko) 2000-01-07 2007-01-02 주식회사 엘지이아이 디지털 티브이의 채널 등화기
DE60217771T3 (de) 2001-07-27 2012-02-09 Canon K.K. Belichtungssystem, Projektionsbelichtungsapparat und Verfahren zur Herstellung eines Artikels
JP2003185798A (ja) * 2001-12-13 2003-07-03 Nikon Corp 軟ｘ線光源装置およびｅｕｖ露光装置ならびに照明方法
SG121762A1 (en) 2002-03-18 2006-05-26 Asml Netherlands Bv Lithographic apparatus, and device manufacturing method
EP1349009B1 (en) 2002-03-18 2009-02-04 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2004343082A (ja) * 2003-04-17 2004-12-02 Asml Netherlands Bv 凹面および凸面を含む集光器を備えたリトグラフ投影装置
JP4356695B2 (ja) 2003-05-09 2009-11-04 株式会社ニコン 照明光学系、投影露光装置、マイクロデバイスの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030017431A (ko) * 2001-08-23 2003-03-03 가부시키가이샤 니콘 조명 광학 장치, 노광 장치, 노광 방법 및 마이크로장치의 제조 방법

Also Published As

Publication number Publication date
US7911584B2 (en) 2011-03-22
WO2005015314A2 (en) 2005-02-17
JP5026788B2 (ja) 2012-09-19
KR20060039876A (ko) 2006-05-09
EP1649324B1 (en) 2011-03-16
ATE502323T1 (de) 2011-04-15
US20070058274A1 (en) 2007-03-15
DE602004031844D1 (de) 2011-04-28
WO2005015314A3 (en) 2005-11-24
JP2007500432A (ja) 2007-01-11
EP1649324A2 (en) 2006-04-26

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